Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

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BC849B
BC849B - Transistor, NPN SOT23

SC06619

Transistor, NPN SOT23

ONSEMI

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BCV27
BCV27 - Transistor, NPN SOT23

SC06621

Transistor, NPN SOT23

ONSEMI

The BCV27 is a NPN Darlington Transistor designed for applications requiring extremely high current gain at currents to 1A. • Sourced from Process 05 • -55 to 150°C Operating junction temperature range

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2N7002LT1G
2N7002LT1G - Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-23, Surface Mount

SC11038

Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-23, Surface Mount

ONSEMI

The 2N7002LT1G is a 60V N-channel small signal MOSFET capable of 300mW power dissipation and 115mA continuous drain current. • Halogen-free/BFR-free • ±20VDC Gate to source voltage • 60VDC Drain to gate voltage • 417°C/W Thermal resistance, junction to amb...

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N Channel 60V 115mA 7.5ohm
IRF1404PBF
IRF1404PBF - Power MOSFET, N Channel, 40 V, 162 A, 0.004 ohm, TO-220AB, Through Hole

SC11147

Power MOSFET, N Channel, 40 V, 162 A, 0.004 ohm, TO-220AB, Through Hole

INFINEON

The IRF1404PBF is a 40V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated • ...

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N Channel 40V 162A 0.004ohm
MPSA14
MPSA14 - Darlington Transistor, TO92

SC10647

Darlington Transistor, TO92

MULTICOMP PRO

The MPSA14 is a NPN Darlington Transistor with 30V collector emitter voltage and 10V emitter base voltage. • -55 to 150°C Operating junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & C...

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BS170P
BS170P - Power MOSFET, N Channel, 60 V, 270 mA, 5 ohm, E-Line, Through Hole

SC06957

Power MOSFET, N Channel, 60 V, 270 mA, 5 ohm, E-Line, Through Hole

DIODES INC.

The BS170P is a N-channel enhancement-mode Vertical DMOSFET with moulded plastic case and solderable matte tin plated terminals as per MIL-STD-202 standard. • Halogen-free, Green device • Qualified to AEC-Q101 standards for high reliability • UL94V-0 Flamm...

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N Channel 60V 270mA 5ohm
IRFPC50
IRFPC50 - Power MOSFET, N Channel, 600 V, 11 A, 0.6 ohm, TO-247AC, Through Hole

SC06289

Power MOSFET, N Channel, 600 V, 11 A, 0.6 ohm, TO-247AC, Through Hole

VISHAY

• Channel Type : N Channel • Drain Source Voltage Vds : 600V • Continuous Drain Current Id : 11A • Drain Source On State Resistance : 0.6ohm

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N Channel 600V 11A 0.6ohm
FDN360P
FDN360P - Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount

SC07006

Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount

ONSEMI

The FDN360P is a surface mount, single P channel PowerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is well suited...

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P Channel 30V 2A 0.08ohm
BS170
BS170 - Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole

SC06956

Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole

ONSEMI

The BS170 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...

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N Channel 60V 500mA 1.2ohm
FQA70N10.
FQA70N10. - Power MOSFET, N Channel, 100 V, 70 A, 0.023 ohm, TO-3P, Through Hole

SC06322

Power MOSFET, N Channel, 100 V, 70 A, 0.023 ohm, TO-3P, Through Hole

ONSEMI

• Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 70A • Drain Source On State Resistance : 0.023ohm

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N Channel 100V 70A 0.023ohm
ZVN3306A
ZVN3306A - Power MOSFET, N Channel, 60 V, 270 mA, 5 ohm, TO-226AA, Through Hole

SC06964

Power MOSFET, N Channel, 60 V, 270 mA, 5 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVN3306A is a N-channel enhancement-mode Vertical DMOSFET.

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N Channel 60V 270mA 5ohm
BCW72
BCW72 - Transistor, NPN SOT23

SC06593

Transistor, NPN SOT23

NXP

The BCW72 is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with the general purpose switching and amplification. • Low current • Low voltage • Low noise • K2 Marking code

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IRLML6402PBF
IRLML6402PBF - Power MOSFET, P Channel, 20 V, 3.7 A, 0.065 ohm, SOT-23, Surface Mount

SC07010

Power MOSFET, P Channel, 20 V, 3.7 A, 0.065 ohm, SOT-23, Surface Mount

INFINEON

The IRLML6402PBF from International Rectifier is -20V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to ...

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P Channel 20V 3.7A 0.065ohm
BC850C
BC850C - Transistor, NPN SOT23

SC06590

Transistor, NPN SOT23

NXP

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IRLU120NPBF
IRLU120NPBF - Power MOSFET, N Channel, 100 V, 10 A, 0.185 ohm, TO-251AA, Through Hole

SC11073

Power MOSFET, N Channel, 100 V, 10 A, 0.185 ohm, TO-251AA, Through Hole

INFINEON

The IRLU120NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated ...

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N Channel 100V 10A 0.185ohm
BC107
BC107 - Si-NPN Uni 50V 0.2A 0.3W

SC06644

Si-NPN Uni 50V 0.2A 0.3W

MULTICOMP PRO

The BC107 from Multicomp Pro is a low power bipolar transistor in TO-18 metal can package. This NPN silicon planar epitaxial transistor is used for general purpose switching and amplification. • Collector emitter voltage (Vce) is 45V at IC = 2mA, IB = 0 • ...

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BSS84P
BSS84P - Power MOSFET, P Channel, 60 V, 170 mA, 8 ohm, SOT-23, Surface Mount

SC07003

Power MOSFET, P Channel, 60 V, 170 mA, 8 ohm, SOT-23, Surface Mount

INFINEON

• Channel Type : P Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 170mA • Drain Source On State Resistance : 8ohm

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P Channel 60V 170mA 8ohm
BC817-25
BC817-25 - Transistor, NPN, SOT23

SC06613

Transistor, NPN, SOT23

NXP

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FQP12N60C
FQP12N60C - Power MOSFET, N Channel, 600 V, 12 A, 0.53 ohm, TO-220, Through Hole

SC11098

Power MOSFET, N Channel, 600 V, 12 A, 0.53 ohm, TO-220, Through Hole

ONSEMI

The FQP12N60C is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and wit...

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N Channel 600V 12A 0.53ohm
IPB60R099CP
IPB60R099CP - Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-263 (D2PAK), Surface Mount

SC11156

Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-263 (D2PAK), Surface Mount

INFINEON

• Channel Type : N Channel • Drain Source Voltage Vds : 650V • Continuous Drain Current Id : 31A • Drain Source On State Resistance : 0.09ohm

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N Channel 650V 31A 0.09ohm
IRFP32N50KPBF
IRFP32N50KPBF - Power MOSFET, N Channel, 500 V, 32 A, 0.16 ohm, TO-247AC, Through Hole

SC11173

Power MOSFET, N Channel, 500 V, 32 A, 0.16 ohm, TO-247AC, Through Hole

VISHAY

The IRFP32N50KPBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching and motor drive applications. • E...

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N Channel 500V 32A 0.16ohm
TIP112
TIP112 - Darlington Transistor, TO220

SC06861

Darlington Transistor, TO220

STMICROELECTRONICS

The TIP112 is a NPN complementary silicon epitaxial-base Power Transistor with monolithic Darlington configuration mounted in a JEDEC plastic package. It is intended for use in medium power linear and switching applications. • Integrated anti-parallel coll...

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IRF840PBF
IRF840PBF - Power MOSFET, N Channel, 500 V, 8 A, 0.85 ohm, TO-220AB, Through Hole

SC11102

Power MOSFET, N Channel, 500 V, 8 A, 0.85 ohm, TO-220AB, Through Hole

VISHAY

The IRF840PBF is a 500V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial...

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N Channel 500V 8A 0.85ohm
ZTX605
ZTX605 - Darlington Transistor, E-Line

SC06838

Darlington Transistor, E-Line

DIODES INC.

ZTX605 is a NPN silicon planar medium power Darlington transistor. • Collector-base voltage is 140V • Collector-emitter voltage is 120V • Emitter-base voltage is 10V • Peak pulse current is 4A • Continuous collector current is 1A • Power dissipation at Tam...

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BC846A
BC846A - Transistor, NPN SOT23

SC06583

Transistor, NPN SOT23

NXP

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