Transistors
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Transistors
Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.
Diodes | Thyristors, DIACS & TRIACS | Npn Transistors | Pnp Transistors | Photo Transistors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVP4424A
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SC06977 |
Power MOSFET, P Channel, 240 V, 200 mA, 15 ohm, TO-226AA, Through Hole DIODES INC. The ZVP4424A is a -240V E-Line P-channel Enhancement Mode Vertical DMOS FET ideal for electronic hook switch. • Low threshold
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P Channel | 240V | 200mA | 15ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF530NPBF
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SC08215 |
Power MOSFET, N Channel, 100 V, 17 A, 0.09 ohm, TO-220AB, Through Hole INFINEON The IRF530NPBF from Infineon is a 100V single N channel HEXFET power MOSFET in a TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and is fully avalanche rated. As a result, th...
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N Channel | 100V | 17A | 0.09ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFU9024NPBF
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SC11062 |
Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-251AA, Through Hole INFINEON The IRFU9024NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d...
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P Channel | 55V | 11A | 0.175ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC107B
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SC06645 |
Si-NPN Uni 50V 0.2A 0.3W MULTICOMP PRO The BC107B from Multicomp Pro is a low power bipolar transistor in TO-18 metal can package. This NPN silicon planar epitaxial transistor is used for general purpose switching and amplification. • Collector emitter voltage (Vce) is 45V at IC = 2mA, IB = 0 •...
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MJE15031.
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SC01309 |
Transistor, TO220 MULTICOMP PRO
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IRF9530NPBF
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SC08220 |
Power MOSFET, P Channel, 100 V, 13 A, 0.2 ohm, TO-220AB, Through Hole INFINEON The IRF9530NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well ...
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P Channel | 100V | 13A | 0.2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RFP50N06
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SC08222 |
Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm, TO-220AB, Through Hole ONSEMI The RFP50N06 is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for a...
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N Channel | 60V | 50A | 0.022ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N3906
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SC08424 |
Transistor, PNP, TO92 MULTICOMP PRO The 2N3906 from Multicomp Pro is a through hole, PNP low power, silicon planar switching transistors in TO-92 metal can package. This transistor features fast switching, hence is suitable for switching and amplification. • Collector emitter voltage (Vce) o...
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BD241C
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SC06745 |
Transistor, NPN, TO220 STMICROELECTRONICS The BD241C is a 100V Silicon NPN Complementary Power Transistor manufactured in planar technology with base island layout. The transistor shows exceptional high gain performance coupled with very low saturation voltage. Fast switching times and very low sa...
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BCX70H
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SC06594 |
Transistor, NPN SOT23 NXP The BCX70H is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with the general purpose switching and amplification. • Low current • Low voltage • AH marking code
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MJ15024G
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SC06782 |
Transistor, NPN, TO3 ONSEMI The MJ15024G is a 250V Silicon NPN Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 400V) • Emitter-base voltage ...
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STW20NK50Z.
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SC06409 |
Power MOSFET, N Channel, 500 V, 17 A, 0.23 ohm, TO-247, Through Hole STMICROELECTRONICS • Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 17A • Drain Source On State Resistance : 0.23ohm
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N Channel | 500V | 17A | 0.23ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP3055
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SC06790 |
Transistor, NPN, TO218 STMICROELECTRONICS The TIP3055 from STMicroelectronics is a through hole complementary power transistor in TO-247 package. This device manufactured in epitaxial base planar technology and suitable for general purpose, power linear and switching applications. • Collector to e...
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IRFP250PBF
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SC11176 |
Power MOSFET, N Channel, 200 V, 30 A, 0.085 ohm, TO-247AC, Through Hole VISHAY The IRFP250PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...
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N Channel | 200V | 30A | 0.085ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN2106A
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SC06962 |
Power MOSFET, N Channel, 60 V, 450 mA, 2 ohm, TO-226AA, Through Hole DIODES INC. The ZVN2106A is a N-channel enhancement mode MOSFET with 8A pulsed drain current. • ±20V Gate Source Voltage
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N Channel | 60V | 450mA | 2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP32C
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SC06510 |
Si-P 100V 3A 40W STMICROELECTRONICS The TIP32C is a -100V Silicon Epitaxial Base PNP Power Transistor intended for use in medium power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • Complementary...
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PMV213SN
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SC06993 |
Power MOSFET, N Channel, 100 V, 1.9 A, 0.25 ohm, SOT-23, Surface Mount NXP The PMV213SN is a N-channel standard level enhancement-mode FET in a plastic package using TrenchMOS® technology. It is suitable for use in DC-to-DC convertors switching applications. • Low conduction losses due to low ON-state resistance • -55 to 150°C Ju...
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N Channel | 100V | 1.9A | 0.25ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD180
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SC09210 |
Transistor, PNP, TO126 ONSEMI
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FZT758
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SC10990 |
Transistor, PNP, SOT223 DIODES INC. The FZT758 is a PNP high voltage Bipolar Transistor offers -500mA high continuous current and -400V collector-base voltage. • UL94V-0 Flammability rating • 1A Peak pulse current • Low saturation voltage VCE(SAT)<lt/>250mV @ 50mA • hFE <gt/>40 Specified up ...
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BSS84
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SC11028 |
MOSFET, P, SOT23 NXP • Drain Source Voltage Vds : 50V • Continuous Drain Current Id : 130mA
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- | 50V | 130mA | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFI540NPBF
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SC11143 |
Power MOSFET, N Channel, 100 V, 20 A, 0.052 ohm, TO-220FP, Through Hole INFINEON The IRFI540NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • Isolated package • 2.5kVrms High voltage isolation • 4.8mm Sink to lead cre...
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N Channel | 100V | 20A | 0.052ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ15003
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SC06779 |
Transistor, NPN, TO3 MULTICOMP PRO The MJ15003 from Multicomp Pro are through hole, NPN Complementary silicon power transistors in TO-3 metal can package. This transistor is suitable in high power audio, disk head positioners and other linear applications. • Collector emitter voltage (Vce) ...
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MJ15022G
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SC06781 |
Transistor, NPN, TO3 ONSEMI The MJ15022G is a 200V Silicon NPN Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 350V) • Emitter-base voltage ...
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ZVN2110A
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SC06963 |
Power MOSFET, N Channel, 100 V, 320 mA, 4 ohm, TO-226AA, Through Hole DIODES INC. ZVN2110A is a N-channel enhancement mode vertical DMOS FET. • Drain-source voltage is 100V • Continuous drain current at Tamb=25° is 320mA • Pulsed drain current is 6A • Gate source voltage is ±20V • Power dissipation at Tamb=25°C is 700mW • Drain-source b...
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N Channel | 100V | 320mA | 4ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VN10LP
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SC06959 |
Power MOSFET, N Channel, 60 V, 270 mA, 7.5 ohm, TO-226AA, Through Hole DIODES INC. The VN10LP is a N-channel enhancement mode Vertical DMOS FET with matte tin-plated terminals and level-1 per J-STD-020 moisture sensitivity. • AEC-Q101 Qualified • UL94V-0 Flammability rating • Green product
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N Channel | 60V | 270mA | 7.5ohm |