Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

Diodes Thyristors, DIACS & TRIACS Npn Transistors Pnp Transistors Photo Transistors
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IRF540ZPBF
IRF540ZPBF - Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-220AB, Through Hole

SC11108

Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-220AB, Through Hole

INFINEON

The IRF540ZPBF is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching ...

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N Channel 100V 36A 0.0265ohm
MMUN2111LT1G
MMUN2111LT1G - Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 10 kohm, 10 kohm

SC10965

Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 10 kohm, 10 kohm

ONSEMI

The MMUN2111LT1G is a PNP Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...

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IRFR9024PBF
IRFR9024PBF - Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-252 (DPAK), Surface Mount

SC11199

Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-252 (DPAK), Surface Mount

VISHAY

The IRFR9024PBF is a -60V P-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The DPAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. The straight lead version (IRFU, ...

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P Channel 60V 8.8A 0.28ohm
IRLML2402PBF
IRLML2402PBF - Power MOSFET, N Channel, 20 V, 1.2 A, 0.25 ohm, SOT-23, Surface Mount

SC06986

Power MOSFET, N Channel, 20 V, 1.2 A, 0.25 ohm, SOT-23, Surface Mount

INFINEON

The IRLML2402PBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. The international rectifier utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with...

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N Channel 20V 1.2A 0.25ohm
BC549C
BC549C - Transistor, NPN, TO92

SC12757

Transistor, NPN, TO92

MULTICOMP PRO

The BC549C from Multicomp Pro are through hole, NPN silicon planar epitaxial general purpose transistor in TO-92 metal can package. This device is typically used in driver stages of audio amplifiers, tape recorders, low noise input stages, Hi-Fi amplifiers...

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TIP50G
TIP50G - Transistor, NPN, TO220

SC06808

Transistor, NPN, TO220

ONSEMI

The TIP50G is a 400V Silicon NPN Bipolar High Voltage Power Transistor designed for line operated audio output amplifier, switch mode power supply drivers and other switching applications. • Collector-base voltage (Vcbo = 500V) • Emitter-base voltage (Vcbo...

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FDN358P
FDN358P - Power MOSFET, P Channel, 30 V, 1.6 A, 0.2 ohm, SOT-23, Surface Mount

SC07005

Power MOSFET, P Channel, 30 V, 1.6 A, 0.2 ohm, SOT-23, Surface Mount

ONSEMI

The FDN358P is a P-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It comes with high power ve...

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P Channel 30V 1.6A 0.2ohm
BF259MC
BF259MC - Transistor, NPN TO39

SC06649

Transistor, NPN TO39

MULTICOMP PRO

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RFP12N10L
RFP12N10L - Power MOSFET, N Channel, 100 V, 12 A, 0.2 ohm, TO-220AB, Through Hole

SC11126

Power MOSFET, N Channel, 100 V, 12 A, 0.2 ohm, TO-220AB, Through Hole

ONSEMI

The RFP12N10L is a 100V N-channel logic level enhancement mode power MOSFET designed for logic level 5V driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a ...

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N Channel 100V 12A 0.2ohm
FDN337N
FDN337N - Power MOSFET, N Channel, 30 V, 2.2 A, 0.065 ohm, SuperSOT, Surface Mount

SC06984

Power MOSFET, N Channel, 30 V, 2.2 A, 0.065 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN337N is N channel logic level enhancement mode power field effect transistor in superSOT-3 package. This transistor is produced using high cell density, DMOS technology, very high density process is especially tailored to minimize on state resistanc...

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N Channel 30V 2.2A 0.065ohm
VNP10N07-E
VNP10N07-E - Power MOSFET, N Channel, 70 V, 10 A, 0.1 ohm, TO-220, Through Hole

SC11011

Power MOSFET, N Channel, 70 V, 10 A, 0.1 ohm, TO-220, Through Hole

STMICROELECTRONICS

The VNP10N07-E is a monolithic device fully auto protected Power MOSFET with ESD protection. The VNP10N07 is a monolithic device made using STMicroelectronics VIPower technology, intended for replacement of standard power MOSFETS in DC to 50kHz application...

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N Channel 70V 10A 0.1ohm
BC109B
BC109B - Transistor, NPN, TO18

SC06718

Transistor, NPN, TO18

MULTICOMP PRO

The BC109B is a 25V Silicon NPN Bipolar Planar Epitaxial Transistor with low power. • Collector-base voltage(Vcbo = 30V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Condi...

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FZT753
FZT753 - Transistor, PNP, SOT223

SC10981

Transistor, PNP, SOT223

DIODES INC.

FZT753 is a 100V, 2A PNP silicon planar medium power transistor in a 4 pin SOT-223 package. • Low saturation voltage • Excellent hFE specified up to 2A • Complementary NPN type FZT653 • 2W power dissipation

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IRFB4710PBF
IRFB4710PBF - Power MOSFET, N Channel, 100 V, 75 A, 0.014 ohm, TO-220AB, Through Hole

SC11091

Power MOSFET, N Channel, 100 V, 75 A, 0.014 ohm, TO-220AB, Through Hole

INFINEON

The IRFB4710PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters. • Fully characterized capacitance including effective COSS to simplify design • Fu...

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N Channel - - 0.014ohm
TIP31C
TIP31C - Transistor, NPN, TO220

SC06756

Transistor, NPN, TO220

MULTICOMP PRO

The TIP31C is a high-performance transistor designed to handle high currents and voltages, making it an ideal choice for demanding applications such as audio amplifiers, power supplies, and switching circuits. With its high current handling capability and ...

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BDX34C
BDX34C - Darlington Transistor, TO220

SC10997

Darlington Transistor, TO220

STMICROELECTRONICS

The BDX34C is a -100V Silicon Epitaxial Base PNP Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching...

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STP60NF06L
STP60NF06L - Power MOSFET, N Channel, 60 V, 60 A, 0.014 ohm, TO-220, Through Hole

SC11131

Power MOSFET, N Channel, 60 V, 60 A, 0.014 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP60NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET designed in unique sTripFET process which minimizes input capacitance and gate charge hence suitable as primary switch in ...

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N Channel 60V 60A 0.014ohm
IRF9Z24NPBF
IRF9Z24NPBF - Power MOSFET, P Channel, 55 V, 12 A, 0.175 ohm, TO-220AB, Through Hole

SC11122

Power MOSFET, P Channel, 55 V, 12 A, 0.175 ohm, TO-220AB, Through Hole

INFINEON

The IRF9Z24NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...

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P Channel 55V 12A 0.175ohm
ZVP3306A
ZVP3306A - Power MOSFET, P Channel, 60 V, 160 mA, 14 ohm, E-Line, Through Hole

SC06975

Power MOSFET, P Channel, 60 V, 160 mA, 14 ohm, E-Line, Through Hole

DIODES INC.

ZVP3306A is a P-channel enhancement mode vertical DMOS FET. • Drain-source voltage is -60V • Continuous drain current at Tamb=25°C is -160mA • Pulsed drain current is -1.6A • Gate-source voltage is ±20V • Power dissipation at Tamb=25°C is 625mW • Drain-sou...

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P Channel 60V 160mA 14ohm
2N2222A
2N2222A - Transistor, NPN, TO18

SC06714

Transistor, NPN, TO18

MULTICOMP PRO

Silicon planar NPN switching transistor for switching and linear application, DC and VHF amplifier applications. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers would...

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MJ15025G
MJ15025G - Transistor, PNP, TO3

SC06787

Transistor, PNP, TO3

ONSEMI

The MJ15025G is a -250V Silicon PNP Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 400V) • Emitter-base voltage...

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STGW30NC120HD
STGW30NC120HD - IGBT, 60 A, 2.75 V, 220 W, 1.2 kV, TO-247, 3 Pins

SC09975

IGBT, 60 A, 2.75 V, 220 W, 1.2 kV, TO-247, 3 Pins

STMICROELECTRONICS

The STGW30NC120HD is a N-channel very fast PowerMESH™ IGBT for use with induction heating and soft switching application. Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGB...

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TIP2955
TIP2955 - Transistor, PNP, TO3P

SC06789

Transistor, PNP, TO3P

MULTICOMP PRO

The TIP2955 is a -60V Silicon PNP Complementary Power Transistor designed for general purpose amplifier and low speed switching applications. • DC current gain (hfe = 20 to 100 at Ic = 4A) • Collector-emitter saturation voltage(Vce (sat) = 1.1V maximum at ...

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ZVN4424A
ZVN4424A - Power MOSFET, N Channel, 240 V, 260 mA, 6 ohm, TO-226AA, Through Hole

SC06970

Power MOSFET, N Channel, 240 V, 260 mA, 6 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVN4424A is a 240V E-Line N-channel Enhancement Mode Vertical DMOS FET featuring low threshold and fast switching. The MOSFET is ideal for earth recall and dialling switches, electronic hook switches, telecoms and high voltage DC-DC converters.

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N Channel 240V 260mA 6ohm
ZTX453.
ZTX453. - NPN 120V 1A 1W

SCZTX453

NPN 120V 1A 1W

DIODES INC.

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