Transistors
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Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP9240
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SC06075 |
Power MOSFET, P Channel, 200 V, 12 A, 0.5 ohm, TO-247AC, Through Hole VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 200V • Continuous Drain Current Id : 12A • Drain Source On State Resistance : 0.5ohm
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P Channel | 200V | 12A | 0.5ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFU5305PBF
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SC11065 |
Power MOSFET, P Channel, 55 V, 22 A, 0.065 ohm, TO-251AA, Through Hole INFINEON • Single N-channel HEXFET® power MOSFET • Advanced process technology • Ultra low on-resistance • Fast switching • Fully avalanche rated • Dynamic dv/dt rating
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P Channel | 55V | 22A | 0.065ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLD024PBF
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SC07023 |
Power MOSFET, N Channel, 60 V, 2.5 A, 0.1 ohm, DIP, Through Hole VISHAY The IRLD024PBF is a 60V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a low cost machine-insertiable case style which ...
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N Channel | 60V | 2.5A | 0.1ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TIP102G
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SC06859 |
Darlington Transistor, TO220 ONSEMI The TIP102G is a 8A NPN bipolar power Darlington Transistor designed for general-purpose amplifier and low speed switching applications. • Complementary device • Monolithic construction with built-in base-emitter shunt resistors
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IRFP240PBF
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SC10643 |
Power MOSFET, N Channel, 200 V, 20 A, 0.18 ohm, TO-247AC, Through Hole VISHAY The IRFP240PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...
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N Channel | 200V | 20A | 0.18ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW10NK80Z.
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SC06405 |
Power MOSFET, N Channel, 800 V, 9 A, 0.78 ohm, TO-247, Through Hole STMICROELECTRONICS • Channel Type : N Channel • Drain Source Voltage Vds : 800V • Continuous Drain Current Id : 9A • Drain Source On State Resistance : 0.78ohm
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N Channel | 800V | 9A | 0.78ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE15033G
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SC06827 |
Transistor, PNP, TO220 ONSEMI The MJE15033G is a PNP Power Transistor designed for use as a high-frequency driver in audio amplifiers. High current gain bandwidth and high DC current gain. • 62.5°C/W Junction-to-ambient thermal resistance • 2.5°C/W Junction-to-case thermal resistance
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BU806
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SC06858 |
Darlington Transistor, TO220 MULTICOMP PRO The BU806 is a 200V NPN Darlington High Voltage Transistor for fast switching applications. • High current • Collector-emitter sustaining voltage (Vceo (sus) = 200V minimum) • Low collector-emitter saturation voltage • Multicomp Pro products are rated 4.6 ...
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TIP120
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SC10999 |
Darlington Transistor, TO220 STMICROELECTRONICS The TIP120 from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar technology with “base island” layout and monolithic darlington configuration resulting in exceptional high ...
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IRFP4321PBF
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SC11179 |
Power MOSFET, N Channel, 150 V, 78 A, 0.012 ohm, TO-247AC, Through Hole INFINEON The IRFP4321PBF is a HEXFET® N-channel Power MOSFET offers improved diode recovery which improves switching and EMI performance. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. • Low RDS (ON)...
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N Channel | 150V | 78A | 0.012ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN4306A
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SC06968 |
Power MOSFET, N Channel, 60 V, 1.1 A, 0.45 ohm, TO-226AA, Through Hole DIODES INC. ZVN4306A is a N-channel enhancement mode vertical DMOS FET. It is ideal for DC – DC converters. • Drain-source voltage is 60V at TA = 25°C • Gate-source voltage is ±20V at TA = 25°C • Continuous drain current is 1.1A at TA = 25°C • Practical continuous dra...
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N Channel | 60V | 1.1A | 0.45ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002
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SC11027 |
Power MOSFET, N Channel, 60 V, 115 mA, 1.2 ohm, SOT-23, Surface Mount ONSEMI The 2N7002 is a N-channel enhancement mode Field Effect Transistor produced using high cell density and DMOS technology. It minimizes on-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications r...
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N Channel | 60V | 115mA | 1.2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP16NF06L..
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SC11129 |
Power MOSFET, N Channel, 60 V, 16 A, 0.07 ohm, TO-220, Through Hole STMICROELECTRONICS The STP16NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET is the latest development of STMicroelectronis unique Single Feature Size strip based process, it has high packing density...
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N Channel | 60V | 16A | 0.07ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N5195G
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SC06743 |
Transistor, PNP, TO126 ONSEMI The 2N5195G is a 4A silicon PNP Power Transistor designed for use in power amplifier and switching circuits and offers excellent safe area limits. • Complement to NPN 2N5191 and 2N5192
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ZTX553
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SC10973 |
Transistor, PNP, E-Line DIODES INC. The ZTX553 is a PNP silicon planar medium power Bipolar Transistor offers -1A continuous collector current and -120V collector-base voltage. • -55 to 200°C Operating temperature range
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MJ15023G
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SC06786 |
Transistor, PNP, TO3 ONSEMI The MJ15023G is a -200V Silicon PNP Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 350V) • Emitter-base voltage...
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ZTX614
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SC06839 |
Darlington Transistor, E-Line DIODES INC. The ZTX614 is a NPN silicon planar medium-power Darlington Transistor offers 800mA continuous collector current and 120V collector-base voltage. • Gain of 10K @ IC = 500mA • -55 to 200°C Operating temperature range
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BDX33C
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SC06854 |
Darlington Transistor, TO220 STMICROELECTRONICS The BDX33C is a NPN complementary silicon power Darlington Transistor with built-in epitaxial planar technology. Designed for use in power linear and switching applications. • Complement to BDX34C • 0.25A Base current
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BD912
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SC06759 |
Transistor, PNP, TO220 STMICROELECTRONICS The BD912 is a silicon epitaxial base NPN Power Transistor. Designed for use in power linear and switching applications. • 5A Base current
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MJ11016G
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SC06896 |
Darlington Transistor, TO3 ONSEMI The MJ11016G is a 120V Silicon NPN Bipolar Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emitter shunt resistor. • High ...
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2N2907A
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SC06705 |
Transistor, PNP, TO18 MULTICOMP PRO Silicon planar PNP switching transistor for DC to VHF amplifier, switching and linear applications. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers would recommend to...
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TIP41C
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SC06513 |
Si-N 100V 6A 2W STMICROELECTRONICS The TIP41C is a base island technology NPN Power Transistor for audio, power linear and switching applications. • Complement to TIP42C • High Switching Speed • hFE Improved Linearity • hFE Grouping
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2N4920G
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SC06742 |
Transistor, PNP, TO126 ONSEMI The 2N4920G is a -80V Silicon PNP Bipolar Plastic Medium Power Transistor designed for driver circuits, switching and amplifier applications. • Excellent safe operating area • Low saturation voltage • Excellent power dissipation due to thermo pad construct...
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STW10NK60Z
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SC06449 |
Power MOSFET, N Channel, 600 V, 10 A, 0.65 ohm, TO-247, Through Hole STMICROELECTRONICS The STW10NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip based PowerME...
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N Channel | 600V | 10A | 0.65ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD139
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SC09455 |
Transistor, NPN, TO126 STMICROELECTRONICS The BD139 is a NPN complementary low voltage NPN transistor in 3 pin SOT-32 package. This device is designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. • Products are pre-selected in DC current gain • Collecto...
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