Transistors
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Transistors
Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.
Diodes | Thyristors, DIACS & TRIACS | Npn Transistors | Pnp Transistors | Photo Transistors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMBT2222A,215
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SC10956 |
Transistor, NPN, SOT23 NXP
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IRFU014PBF
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SC11070 |
Power MOSFET, N Channel, 60 V, 8.4 A, 0.2 ohm, TO-251AA, Through Hole VISHAY The IRFU014PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power dissi...
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N Channel | 60V | 8.4A | 0.2ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MPSA42
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SC06677 |
Transistor, NPN, TO92 ONSEMI The MPSA42 is a NPN high voltage amplifier in TO-92 package. This device is designed for applications as a video output and other high voltage applications. • Collector to emitter voltage (Vce) of 300V • Collector to emitter saturation voltage of 500mV at ...
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BDV67B
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SC06869 |
Darlington Transistor, TO247 MULTICOMP PRO The BDV67B is a NPN Darlington Transistor designed in monolithic construction with built-in base-emitter shunt resistor. • -65 to 150°C Operating junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *...
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IRF830PBF
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SC11101 |
Power MOSFET, N Channel, 500 V, 4.5 A, 1.5 ohm, TO-220AB, Through Hole VISHAY The IRF830PBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS, uninterruptable power supply and high speed power switching. • Dyna...
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N Channel | 500V | 4.5A | 1.5ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE350
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SC08528 |
Transistor, PNP, TO126 MULTICOMP PRO The MJE350 is a -300V PNP Plastic Medium Power Transistor designed for use line-operated applications such as low power, line operated series pass and switching regulator requiring PNP capability. • Collector-base voltage(Vcbo = 300V) • Emitter-base voltag...
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MJ21194G
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SC06817 |
Transistor, NPN, TO3 ONSEMI The MJ21194G is a 250V Silicon NPN Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications. • Total harmonic distortion characterized • Hig...
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ZTX853.
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SCZTX853 |
NPN 200V 4A 1200mW TO92 Q23 DIODES INC.
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TIP127
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SC06864 |
Darlington Transistor, Darlington, PNP, 100 V, 65 W, 5 A, TO-220, 3 Pins STMICROELECTRONICS The TIP127 is a NPN-PNP complementary power Darlington Transistor manufactured in Planar technology with "Base Island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low sa...
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IRFP264PBF
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SC11174 |
Power MOSFET, N Channel, 250 V, 38 A, 0.075 ohm, TO-247AC, Through Hole VISHAY The IRFP264PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package provides greater creepage distances between pins to meet the require...
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N Channel | 250V | 38A | 0.075ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP4368PBF
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SC11167 |
Power MOSFET, N Channel, 75 V, 350 A, 0.00146 ohm, TO-247AC, Through Hole INFINEON The IRFP4368PBF is a 75V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible ...
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N Channel | 75V | 350A | 0.00146ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807-40
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SC06597 |
Transistor, PNP SOT23 NXP
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2N4923G
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SC06736 |
Transistor, NPN, TO126 ONSEMI The 2N4923G is a 1A NPN medium-power Silicon Transistor designed for driver circuits, switching and amplifier applications. • Low saturation voltage • Excellent power dissipation due to thermopad construction • Excellent safe operating area • Complement to...
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IRFP250NPBF
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SC11079 |
Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through Hole INFINEON The IRFP250NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully aval...
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N Channel | 200V | 30A | 0.075ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQA24N60.
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SC06316 |
Power MOSFET, N Channel, 600 V, 23.5 A, 0.24 ohm, TO-3P, Through Hole ONSEMI • Channel Type : N Channel • Drain Source Voltage Vds : 600V • Continuous Drain Current Id : 23.5A • Drain Source On State Resistance : 0.24ohm
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N Channel | 600V | 23.5A | 0.24ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE15032G
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SC06818 |
Transistor, NPN, TO220 ONSEMI The MJE15032G is a 250V Silicon NPN Complementary Plastic Power Transistor designed for use as high frequency drivers in audio amplifiers. • High DC current gain • High current gain bandwidth • Epoxy meets UL 94V-0 rating
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TIP36C
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SC06792 |
Transistor, PNP, TO218 STMICROELECTRONICS The TIP36C is a complementary PNP Power Transistor with low collector-emitter saturation voltage. It is manufactured in planar technology with base island layout. The resulting transistor show exceptional high gain performance coupled with very low saturat...
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BSS84
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SC11030 |
Power MOSFET, P Channel, 50 V, 130 mA, 1.2 ohm, SOT-23, Surface Mount ONSEMI The BSS84 is P channel logic level enhancement mode field effect transistor in SOT-23 package. This product is designed to minimize on state resistance while provide rugged, reliable and fast switching performance thus BSS84 are suited for low voltage, low...
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P Channel | 50V | 130mA | 1.2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF4905PBF
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SC11119 |
Power MOSFET, P Channel, 55 V, 74 A, 0.02 ohm, TO-220AB, Through Hole INFINEON The IRF4905PBF is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well kn...
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P Channel | 55V | 74A | 0.02ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCV26
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SC06604 |
Transistor, PNP SOT23 ONSEMI The BCV26 is a PNP Darlington Transistor designed for applications requiring extremely high current gain at currents to 800mA. • Sourced from Process 61 • -55 to 150°C Operating junction temperature range
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BC177
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SC06647 |
Transistor, PNP, TO18 MULTICOMP PRO The BC177 is a -45V Silicon PNP Bipolar Planar Epitaxial Transistor with low power. • Collector-base voltage(Vcbo = 50V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Condi...
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BC109
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SC06717 |
Transistor, NPN, TO18 MULTICOMP PRO The BC109 from Multicomp Pro are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 25V • Continuous collector current (Ic)...
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IPP60R099CP
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SC11112 |
Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-220, Through Hole INFINEON The IPP60R099CP is a 650V N-channel CoolMOS™ Power MOSFET designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driv...
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N Channel | 650V | 31A | 0.09ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP27P06
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SC08209 |
Power MOSFET, P Channel, 60 V, 27 A, 0.07 ohm, TO-220, Through Hole ONSEMI The FQP27P06 is a through hole, -60V P channel QFET MOSFET in TO-220 package. This device feature planar stripe and DMOS technology which has been tailored to minimize the onstate resistance and provide superior switching performance and high avalanche ene...
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P Channel | 60V | 27A | 0.07ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN3310A
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SC06965 |
Power MOSFET, N Channel, 100 V, 200 mA, 10 ohm, TO-226AA, Through Hole DIODES INC. The ZVN3310A is a 100V E-Line N-channel Enhancement Mode Vertical DMOS FET with 10Ω resistance and 625mW power dissipation.
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N Channel | 100V | 200mA | 10ohm |