Transistors
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Transistors
Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.
Diodes | Thyristors, DIACS & TRIACS | Npn Transistors | Pnp Transistors | Photo Transistors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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MJ11033
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SC06898 |
Darlington Transistor, TO3 MULTICOMP PRO The MJ11033 is a -120V Silicon PNP Complementary Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. • High DC current gain • Monolithic construction with built-in base-emitter shunt resis...
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BUX80
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SC06803 |
Transistor, NPN, TO3 MULTICOMP PRO The BUX80 is a 400V NPN High Voltage Power Transistor designed for use in high voltage and high speed power switching in inductive circuit, motor control, solenoid and relay drivers. • Collector-emitter sustaining voltage (Vceo (sus) = 4000V minimum) • Low...
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MJL21194G
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SC06819 |
Transistor, NPN, TO264 ONSEMI The MJL21194G is a NPN complementary Bipolar Power Transistor, utilize Perforated Emitter technology. Designed for high power audio output, disk head positioners and other linear applications. • Complement to MJL21193G • Excellent Gain Linearity • Total Ha...
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BD677
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SC09211 |
Darlington Transistor, TO126 MULTICOMP PRO The BD677 is a NPN power Darlington Transistor with 60V collector base voltage and 5V emitter base voltage. • -55 to 150°C Operating junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & ...
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ZTX451
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SC10972 |
Transistor, NPN, E-Line DIODES INC. The ZTX451 is a NPN silicon planar medium power Bipolar Transistor offers 1A continuous collector current and 80V collector-base voltage. • -55 to 200°C Operating temperature range
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NDS7002A
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SC06992 |
Power MOSFET, N Channel, 60 V, 280 mA, 2 ohm, SOT-23, Surface Mount ONSEMI The NDS7002A is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. It minimize on-state resistance while providing rugged, reliable and fast switching performance. They can be used in most application...
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N Channel | 60V | 280mA | 2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFZ44NPBF
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SC08251 |
Power MOSFET, N Channel, 55 V, 41 A, 0.0175 ohm, TO-220AB, Through Hole INFINEON The IRFZ44NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...
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N Channel | 55V | 41A | 0.0175ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPD04N80C3
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SC11153 |
Power MOSFET, N Channel, 800 V, 4 A, 1.1 ohm, TO-252 (DPAK), Surface Mount INFINEON • Channel Type : N Channel • Drain Source Voltage Vds : 800V • Continuous Drain Current Id : 4A • Drain Source On State Resistance : 1.1ohm
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N Channel | 800V | 4A | 1.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9620
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SCIRF9620 |
Power MOSFET, P Channel, 200 V, 3.5 A, 1.5 ohm, TO-220AB, Through Hole VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 200V • Continuous Drain Current Id : 3.5A • Drain Source On State Resistance : 1.5ohm
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P Channel | 200V | 3.5A | 1.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC109C
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SC06719 |
Transistor, NPN, TO18 MULTICOMP PRO The BC109C from Multicomp Pro are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 25V • Continuous collector current (Ic...
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STP36NF06L
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SC11127 |
Power MOSFET, N Channel, 60 V, 30 A, 0.032 ohm, TO-220, Through Hole STMICROELECTRONICS • N-channel, 60V, 30A STripFET™ II power MOSFET • Exceptional dv/dt capability • 100% avalanche tested • Low threshold drive • Low on-resistance and rugged avalanche characteristics • Used for switching application
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N Channel | 60V | 30A | 0.032ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMBT4403
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SC06611 |
Transistor, PNP SOT23 NXP
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ZVP0545A
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SC06972 |
Power MOSFET, P Channel, 450 V, 45 mA, 150 ohm, E-Line, Through Hole DIODES INC. The ZVP0545A is a -450V E-Line P-channel Enhancement Mode Vertical DMOS FET with 150Ω resistance and 700mW power dissipation.
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P Channel | 450V | 45mA | 150ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSX20
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SC06709 |
Transistor, NPN, TO18 MULTICOMP PRO The BSX20 is a 15V Silicon NPN Bipolar Planar Low Power Transistor designed for high speed saturated switching applications. • Collector-base voltage(Vcbo = 40V) • Emitter-base voltage(Vebo = 4.5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12...
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ZTX753.
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SCZTX753 |
PNP 120V 2A 1W DIODES INC.
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BC337
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SC06661 |
Transistor, NPN TO92 MULTICOMP PRO The BC337 is a NPN silicon Planar Epitaxial Transistor, suitable for use in driver and output stages of audio amplifier. • 200°C/W Junction to Ambient in Free Air Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited w...
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ZXMP6A18K
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SC11200 |
Power MOSFET, P Channel, 60 V, 10.4 A, 0.055 ohm, TO-252 (DPAK), Surface Mount DIODES INC. The ZXMP6A18K is a -60V P-channel Enhancement Mode MOSFET that utilizes a unique structure and combines the benefits of low on-resistance with fast switching speed. This makes the MOSFET ideal for high efficiency, low voltage and power management applicati...
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P Channel | 60V | 10.4A | 0.055ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP42C
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SC07847 |
Transistor, PNP, TO220 MULTICOMP PRO The TIP42C is a -100V PNP complementary silicon plastic Power Transistor designed for use in general purpose power amplifier and switching applications. • 100V Minimum collector-emitter sustaining voltage (VCEO (sus)) • 1.5V Maximum collector-emitter satur...
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FDN335N
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SC06983 |
Power MOSFET, N Channel, 20 V, 1.7 A, 0.07 ohm, SOT-23, Surface Mount ONSEMI The FDN335N is a N-channel 2.5V specified MOSFET uses advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Low gate threshold voltage • Hi...
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N Channel | 20V | 1.7A | 0.07ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT619
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SC06630 |
Transistor, NPN, SOT23 DIODES INC. The FMMT619 from Diode Inc is a surface mount, 50V NPN silicon low saturation transistor in SOT-23 package. This transistor is moulded in plastic and "Green" moulding compound, terminal is matte tin finish. • Automotive grade AEC-Q101 qualified • UL recogn...
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FMMT720
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SC06633 |
Transistor, PNP, SOT23 DIODES INC. The FMMT720 is a PNP silicon Low Saturation Transistor with tin-plated terminals, UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FMMT619 • Level-1 per J-STD-020 moisture sensitivity •...
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STW12NK80Z.
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SC06406 |
Power MOSFET, N Channel, 800 V, 10.5 A, 0.65 ohm, TO-247, Through Hole STMICROELECTRONICS The STW12NK80Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerME...
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N Channel | 800V | 10.5A | 0.65ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE340
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SC06487 |
Si-N 300V 0.5A 20W Vidpow STMICROELECTRONICS The MJE340 is a 300V Silicon Planar NPN Complementary Power Transistor intended for use in medium power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • Compleme...
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ZVN4206AV
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SC06967 |
Power MOSFET, N Channel, 60 V, 600 mA, 1.5 ohm, E-Line, Through Hole DIODES INC. The ZVN4206AV is a N-channel enhancement-mode Vertical DMOSFET with repetitive avalanche rating and no transient protection required. It is suitable for automotive relay drivers and stepper motor driver applications.
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N Channel | 60V | 600mA | 1.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFD9120PBF
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SC07026 |
Power MOSFET, P Channel, 100 V, 1 A, 0.6 ohm, DIP, Through Hole VISHAY The IRFD9120PBF is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which...
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P Channel | 100V | 1A | 0.6ohm |