MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML0030TRPBF
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SC16720 |
Power MOSFET, N Channel, 30 V, 5.3 A, 0.022 ohm, SOT-23, Surface Mount INFINEON The IRLML0030TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Multi-vendor compatibility • Environme...
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N Channel | 30V | 5.3A | 0.022ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMV37ENEAR
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SC16985 |
SMD N Channel Power MOSFET, 60V, 3.5A, 0.037 Ohm, TO-236AB NEXPERIA The PMV37ENEAR from NEXPERIA is a N Channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device plastic package using Trench MOSFET technology. • Suitable for relay driver, high speed line driver, low-side load...
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N Channel | 60V | 3.5A | 0.037ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFBE30PBF
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SC16997 |
Power MOSFET, N Channel, 800 V, 4.1 A, 3 ohm, TO-220AB, Through Hole VISHAY The IRFBE30PBF is a 800V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercia...
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N Channel | 800V | 4.1A | 3ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SUP53P06-20-E3
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SC16987 |
Power MOSFET, P Channel, 60 V, 53 A, 0.0195 ohm, TO-220AB, Through Hole VISHAY The SUP53P06-20-E3 is a -60V P-channel TrenchFET® Power MOSFET. • 100% UIS Tested
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P Channel | 60V | 53A | 0.0195ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF3205PBF
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SC16899 |
Power MOSFET, N Channel, 55 V, 110 A, 0.008 ohm, TO-220AB, Through Hole INFINEON The IRF3205PBF is a HEXFET® N-channel Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Advanced HEXFET® power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar...
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N Channel | 55V | 110A | 0.008ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP5NK80ZFP
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SC16947 |
Power MOSFET, N Channel, 800 V, 4.3 A, 1.9 ohm, TO-220FP, Through Hole STMICROELECTRONICS The STP5NK80ZFP is a 800V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...
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N Channel | 800V | 4.3A | 1.9ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFML8244TRPBF
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SC16788 |
Power MOSFET, N Channel, 25 V, 5.8 A, 0.02 ohm, SOT-23, Surface Mount INFINEON The IRFML8244TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Lower switching losses • Environment-f...
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N Channel | 25V | 5.8A | 0.02ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2308BDS-T1-GE3
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SC16728 |
Power MOSFET, N Channel, 60 V, 2.3 A, 0.13 ohm, TO-236, Surface Mount VISHAY The SI2308BDS-T1-GE3 is a N-channel TrenchFET® Power MOSFET with 175°C operating temperature. • 100% Rg Tested • 100% UIS Tested • ±20V Gate-source voltage
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N Channel | 60V | 2.3A | 0.13ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VP2106N3-G
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SC15966 |
Power MOSFET, P Channel, 60V, 250mA, 9 Ohm, TO-92 MICROCHIP • Channel Type : P Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 250mA • Drain Source On State Resistance : 9ohm
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P Channel | 60V | 250mA | 9ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI7149ADP-T1-GE3
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SC16823 |
SMD P Channel Power MOSFET, 30V, 50A, 0.0042 Ohm, PowerPAK SO VISHAY • Suitable for battery, load and adaptor switches, notebook computers and notebook battery packs • TrenchFET® Power MOSFET • Low On-Resistance for Low Voltage Drop • Extended VGS max. Rating: 25V
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P Channel | 30V | 50A | 0.0042ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQT7N10LTF
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SC16853 |
Power MOSFET, N Channel, 100 V, 1.7 A, 0.275 ohm, SOT-223, Surface Mount ONSEMI The FQT7N10LTF is a N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalan...
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N Channel | 100V | 1.7A | 0.275ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2318CDS-T1-GE3
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SC16746 |
Power MOSFET, N Channel, 40 V, 3.9 A, 0.036 ohm, TO-236, Surface Mount VISHAY • N-channel 40V (D-S) TrenchFET® power MOSFET • 100% Rg tested • Used in DC/DC converters, load switch
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N Channel | 40V | 3.9A | 0.036ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQT5P10TF
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SC16874 |
Power MOSFET, P Channel, 100 V, 1 A, 0.82 ohm, SOT-223, Surface Mount ONSEMI The FQT5P10TF is a -100V P-channel QFET® MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche en...
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P Channel | 100V | 1A | 0.82ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SIS412DN-T1-GE3
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SC16901 |
Power MOSFET, N Channel, 30 V, 12 A, 0.02 ohm, PowerPAK 1212, Surface Mount VISHAY The SIS412DN-T1-GE3 is a 30V N-channel TrenchFET® Power MOSFET. Suitable for load switches, notebook PCs, desktop PCs and game station applications. The N-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and wi...
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N Channel | 30V | 12A | 0.02ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDT439N
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SC16892 |
Power MOSFET, N Channel, 30 V, 6.3 A, 0.038 ohm, SOT-223, Surface Mount ONSEMI The FDT439N is a 30V N-channel 2.5V specified enhancement mode Field Effect Transistor is produced using high cell density and DMOS technology. This very high density process is specially tailored to minimize on-state resistance and provide superior switch...
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N Channel | 30V | 6.3A | 0.038ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF840BPBF
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SC16977 |
N Channel Power MOSFET, 500V, 8.7A, 0.7 Ohm, TO-220AB VISHAY • Suitable for displays (LCD or plasma), server and telecom power supplies, industrial applications such as welding, induction heating and motor drivers
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N Channel | 500V | 8.7A | 0.7ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI1308EDL-T1-GE3
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SC16893 |
Power MOSFET, N Channel, 30 V, 1.4 A, 0.11 ohm, SOT-323, Surface Mount VISHAY The SI1308EDL-T1-GE3 is a 30V N-channel TrenchFET® Power MOSFET with power dissipation at 500mW. • PWM optimized for fast switching • 100% Rg Tested • Up to 1800V ESD protection • Halogen-free
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N Channel | 30V | 1.4A | 0.11ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI1012CR-T1-GE3
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SC16706 |
Power MOSFET, N Channel, 20 V, 630 mA, 0.33 ohm, SC-75A, Surface Mount VISHAY The SI1012CR-T1-GE3 is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays and memories drivers. • 1.2V Rated voltage • 100% Rg tested • 1000V Gate-source ESD protected • Halogen-free
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N Channel | 20V | 630mA | 0.33ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS4685
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SC16785 |
Power MOSFET, P Channel, 40 V, 8.2 A, 0.022 ohm, SOIC, Surface Mount ONSEMI The FDS4685 is a -40V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combi...
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P Channel | 40V | 8.2A | 0.022ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMV100EPAR
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SC16923 |
SMD P Channel, Power MOSFET, 60V, 2.2A, 0.1 Ohm, SOT-23 NEXPERIA The PMV100EPAR from NEXPERIA is a P Channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) surface mounted device (SMD) plastic package using Trench MOSFET technology. • Suitable application: relay driver, high speed line drive...
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P Channel | 60V | 2.2A | 0.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLB8743PBF
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SC16830 |
Power MOSFET, N Channel, 30 V, 40 A, 0.0025 ohm, TO-220AB, Through Hole INFINEON The IRLB8743PBF is a 30V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high frequency synchronous buck, converters for computer processor ...
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N Channel | 30V | 40A | 0.0025ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS139H6327XTSA1
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SC16828 |
Power MOSFET, N Channel, 250 V, 100 mA, 7.8 ohm, SOT-23, Surface Mount INFINEON The BSS139H6327 is a SIPMOS® N-channel depletion mode Small Signal Transistor with one single component it is possible to realize a simple current regulator. Areas of application include power supply start-up power, overvoltage protection, in-rush-current ...
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N Channel | 250V | 100mA | 7.8ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP2035U
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SC16753 |
Power MOSFET, Enhancement Mode, P Channel, 20 V, 3.6 A, 0.035 ohm, SOT-23, Surface Mount DIODES INC. The DMP2035U from Diode Inc is a surface mount, P channel enhancement mode MOSFET in SOT-23 package. This device features low on resistance, low input capacitance, fast switching speed and low input/output leakage thus it is ideal for high efficiency power...
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P Channel | 20V | 3.6A | 0.035ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPD85P04P4L06ATMA1
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SC15972 |
Power MOSFET, P Channel, 40V, 85A, 0.0053 Ohm, TO-252 (DPAK), SMD INFINEON • Channel Type : P Channel • Drain Source Voltage Vds : 40V • Continuous Drain Current Id : 85A • Drain Source On State Resistance : 0.0053ohm
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P Channel | 40V | 85A | 0.0053ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TP2104N3-G
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SC16920 |
P Channel Power MOSFET, Vertical DMOS FET, 40V, 175mA, 6 Ohm, TO-92 MICROCHIP This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...
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P Channel | 40V | 175mA | 6ohm |