MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9321TRPBF
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SC15976 |
Power MOSFET, P Channel, 30V, 15A, 0.0059 Ohm, SOIC, SMD INFINEON • Channel Type : P Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 15A • Drain Source On State Resistance : 0.0059ohm
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P Channel | 30V | 15A | 0.0059ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQM120P06-07L_GE3
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SC16844 |
SMD P Channel Power MOSFET, 60V, 120A, 0.0056 Ohm, TO-263 (D2PAK) VISHAY • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100% Rg and UIS Tested
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P Channel | 60V | 120A | 0.0056ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLML6401TRPBF
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SC16733 |
Power MOSFET, P Channel, 12 V, 4.3 A, 0.05 ohm, SOT-23, Surface Mount INFINEON The IRLML6401TRPBF is a -12V single P-channel HEXFET Power MOSFET, compatible with existing surface mount techniques. This MOSFET features increased reliability and easier manufacturing. • Halogen-free • MSL1, Industrial qualification • Multi-vendor compat...
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P Channel | 12V | 4.3A | 0.05ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTD2955T4G
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SC16860 |
Power MOSFET, P Channel, 60 V, 12 A, 0.155 ohm, TO-252 (DPAK), Surface Mount ONSEMI The NTD2955T4G is a -60V P-channel Power MOSFET designed to withstand high energy in the avalanche and commutation modes. It is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls. This device ...
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P Channel | 60V | 12A | 0.155ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STP4NK60ZFP
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SC16986 |
Power MOSFET, N Channel, 600 V, 4 A, 2 ohm, TO-220FP, Through Hole STMICROELECTRONICS The STP4NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...
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N Channel | 600V | 4A | 2ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFR9120NTRPBF
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SC16875 |
Power MOSFET, P Channel, 100 V, 6.6 A, 0.48 ohm, TO-252 (DPAK), Surface Mount INFINEON The IRFR9120NTRPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design...
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P Channel | 100V | 6.6A | 0.48ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFBG20PBF
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SC16930 |
Power MOSFET, N Channel, 1 kV, 1.3 A, 11.5 ohm, TO-220AB, Through Hole VISHAY The IRFBG20PBF is a 1000V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. The ...
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N Channel | 1kV | 1.3A | 11.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLB3034PBF
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SC16937 |
Power MOSFET, N Channel, 40 V, 195 A, 0.0014 ohm, TO-220AB, Through Hole INFINEON The IRLB3034PBF is 40V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible po...
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N Channel | 40V | 195A | 0.0014ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP11NM60FD
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SC16952 |
N Channel Power MOSFET, 600V, 11A, 0.4 Ohm, TO-220AB STMICROELECTRONICS The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. • 100% avalanche tested • Hi...
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N Channel | 600V | 11A | 0.4ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPW60R017C7XKSA1
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SC17026 |
Power MOSFET, N Channel, 600 V, 109 A, 0.015 ohm, TO-247, Through Hole INFINEON 600V CoolMOS™ C7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle suitable for use in PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. computing, se...
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N Channel | 600V | 109A | 0.015ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SUD50P04-08-GE3
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SC16743 |
Power MOSFET, P Channel, 40 V, 50 A, 0.0067 ohm, TO-252 (DPAK), Surface Mount VISHAY The SUD50P04-08-GE3 from Vishay is a surface mount, 40V P channel TrenchFET power MOSFET in TO-252 package. This device is used as power switch, DC to DC converters and load switch in high current applications. • Drain to source voltage (Vds) of -40V • Gat...
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P Channel | 40V | 50A | 0.0067ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDH44N50
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SC17002 |
Power MOSFET, General Purpose, N Channel, 500 V, 44 A, 0.11 ohm, TO-247, Through Hole ONSEMI The FDH44N50 is a 500V N-channel Power MOSFET based on planar stripe and DMOS technology. This SMPS series MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode's r...
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N Channel | 500V | 44A | 0.11ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB4115PBF
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SC16837 |
Power MOSFET, N Channel, 150 V, 104 A, 0.0093 ohm, TO-220AB, Through Hole INFINEON The IRFB4115PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...
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N Channel | 150V | 104A | 0.0093ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS9926A
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SC16805 |
Dual MOSFET, N Channel, 20V, 6.5A, 0.025 Ohm, SOIC, Surface Mount ONSEMI The FDS9926A is a 20V Dual N-channel 2.5V Specified PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The medium voltage power MOSFET is optimized power s...
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLB4030PBF
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SC16936 |
Power MOSFET, N Channel, 100 V, 110 A, 0.0034 ohm, TO-220AB, Through Hole INFINEON The IRLB4030PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for DC motor drive, high efficiency synchronous rectification in SMPS,...
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N Channel | 100V | 110A | 0.0034ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7416TRPBF
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SC15957 |
Power MOSFET, P Channel, 30V, 10A, 0.02 Ohm, SOIC, SMD INFINEON • Channel Type : P Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 10A • Drain Source On State Resistance : 0.02ohm
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P Channel | 30V | 10A | 0.02ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002DW-7-F
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SC15992 |
Dual MOSFET, N Channel, 60V, 115mA, 13.5 Ohm, SOT-363, SMD DIODES INC. The 2N7002DW-7-F is a dual N-channel enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for high efficiency power management applications. • Low ON-resistance • Lo...
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQPF27P06
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SC16932 |
Power MOSFET, P Channel, 60 V, 17 A, 0.055 ohm, TO-220F, Through Hole ONSEMI The FQPF27P06 is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performa...
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P Channel | 60V | 17A | 0.055ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPB072N15N3GATMA1
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SC16960 |
Power MOSFET, N Channel, 150 V, 100 A, 0.0058 ohm, TO-263 (D2PAK), Surface Mount INFINEON The IPB072N15N3 G is an OptiMOS™ 3 N-channel Power Transistor with low resistance, excellent switching performance, increased efficiency, excellent gate charge x R DS (ON) product (FOM) and smallest board-space consumption. • Environment-friendly • High po...
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N Channel | 150V | 100A | 0.0058ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS107P
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SC16884 |
N Channel Power MOSFET, 200V, 120mA, 30 Ohm, E-Line DIODES INC. • Case: E-Line (TO-92 Compatible) • Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Rating 94V-0
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N Channel | 200V | 120mA | 30ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP4468PBF
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SC15830 |
Power MOSFET, N Channel, 100V, 290A, 0.002 ohm, TO-247AC, INFINEON The IRFP4468PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...
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N Channel | 100V | 290A | 0.002ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS806NEH6327XTSA1
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SC16876 |
Power MOSFET, N Channel, 20 V, 2.3 A, 0.041 ohm, SOT-23, Surface Mount INFINEON • N-channel Optima's™-2 small signal transistor • Enhancement mode • Ultra-logic level (1.8V rated) • ESD protected • Avalanche rated • Qualified according to AEC Q101
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N Channel | 20V | 2.3A | 0.041ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTD25P03LT4G
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SC16886 |
Power MOSFET, Logic Level, P Channel, 30 V, 25 A, 0.056 ohm, TO-252 (DPAK), Surface Mount ONSEMI The NTD25P03LT4G is a -30V P-channel Power MOSFET designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source to drain diode recovery time is comparable to a discrete fast reco...
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P Channel | 30V | 25A | 0.056ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB4227PBF
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SC17001 |
Power MOSFET, N Channel, 200 V, 65 A, 0.0197 ohm, TO-220AB, Through Hole INFINEON The IRFB4227PBF is a 200V single N-channel HEXFET® Power MOSFET PDP switch designed to sustain, energy recovery and pass switch applications for plasma display panels. By adapting the latest techniques it achieves low on-resistance per silicon area and EPU...
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N Channel | 200V | 65A | 0.0197ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI4925DDY-T1-GE3
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SC16688 |
SMD Dual MOSFET P Channel Transistor, SOIC, 30V, 8A VISHAY The SI4925DDY-T1-GE3 is a -30V Dual P-channel TrenchFET® Power MOSFET. Suitable for load switches, notebook PCs, desktop PCs and game station applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages whic...
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P Channel | - | - | - |