Transistors
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Transistors
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Diodes | Thyristors, DIACS & TRIACS | Npn Transistors | Pnp Transistors | Photo Transistors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Power Dissipation | Transistor Case Style | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ULN2804A
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SC08608 |
Darlington Array 8 NPN, 2804, DIP18 STMICROELECTRONICS The ULN2804A from STMicroelectronics is a through hole eight darlington array in DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features peak load current r...
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TIP120
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SC11000 |
Darlington Transistor, TO220 MULTICOMP PRO The TIP120 from Multicomp Pro are through hole, darlington transistor in TO-220 package. This transistor is used for low speed switching and amplification. • Collector emitter voltage (Vce) of 60V • Continuous collector current (Ic) of 5A • Power dissipati...
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BSS123
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SC06980 |
Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount ONSEMI The BSS123 is N channel logic level enhancement mode field effect transistor in SOT-23 package. This product is designed to minimize on state resistance while providing rugged, reliable and fast switching performance thus BSS123 are suited for low voltage,...
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N Channel | 100V | 170mA | 360mW | - | 6ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF820PBF
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SC11107 |
Power MOSFET, N Channel, 500 V, 2.5 A, 3 ohm, TO-220AB, Through Hole VISHAY The IRF820PBF is a 500V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industr...
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N Channel | 500V | 2.5A | 40W | TO-220AB | 3ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFZ34NPBF
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SC08250 |
Power MOSFET, N Channel, 55 V, 29 A, 0.04 ohm, TO-220AB, Through Hole INFINEON The IRFZ34NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated
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N Channel | 55V | 29A | 68W | - | 0.04ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP150N
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SC06218 |
Power MOSFET, N Channel, 100 V, 39 A, 0.036 ohm, TO-247AC, Through Hole INFINEON • Channel Type : N Channel • Power Dissipation : 140W • Transistor Case Style : TO-247AC • Drain Source On State Resistance : 0.036ohm
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N Channel | - | - | 140W | TO-247AC | 0.036ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT617
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SC06628 |
Transistor, NPN, SOT23 DIODES INC. The FMMT617 is a NPN silicon power switching Bipolar Transistor offers 625mW power dissipation and extremely low saturation voltage. • 12A Peak pulse current • Excellent hFE characteristics up to 12A • Extremely low equivalent on resistance • PNP complemen...
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- | - | - | 625mW | SOT-23 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX450
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SC10969 |
Transistor, NPN, E-Line DIODES INC. ZTX450 is a through hole, NPN silicon planar medium power transistor in E-Line (TO-92 Compatible) package. • Collector to emitter voltage (Vce) of 45V • Collector to base voltage of 60V • Power dissipation (Pd) of 1W • Continuous collector current of 1A • ...
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- | - | - | 1W | E-Line | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCX17
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SC06607 |
Transistor, PNP SOT23 NXP The BCX17 is a PNP General Purpose Transistor housed in a plastic package. It is suitable for use with the saturated switching and driver applications, thick and thin-film circuits. • High current • Low voltage • NPN complement is BCX19 • T1 Marking code
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- | - | - | 250mW | SOT-23 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDD4685
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SC11194 |
Power MOSFET, P Channel, 40 V, 32 A, 0.027 ohm, TO-252 (DPAK), Surface Mount ONSEMI The FDD4685 is a -40V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combi...
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P Channel | 40V | 32A | 69W | - | 0.027ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP35C
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SC06791 |
Transistor, NPN, TO247, 100V, 3MHz, 125W, 25A STMICROELECTRONICS The TIP35C from STMicroelectronics is a through hole complementary power transistor in TO-247 package. This device manufactured in planar technology with “base island” layout resulting in exceptional high gain performance coupled with very low saturation v...
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- | - | - | 125W | TO-247 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF540NPBF
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SC08216 |
Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-220AB, Through Hole INFINEON The IRF540NPBF is 100V single N channel HEXFET power MOSFET in 3 pin TO-220AB package. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with fast switching speed and ruggedized device...
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N Channel | 100V | 33A | 130W | - | 0.044ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP460
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SC06074 |
Power MOSFET, N Channel, 500 V, 20 A, 0.27 ohm, TO-247AC, Through Hole VISHAY • Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 20A • Power Dissipation : 250W • Transistor Case Style : TO-247AC • Drain Source On State Resistance : 0.27ohm
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N Channel | 500V | 20A | 250W | TO-247AC | 0.27ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX653.
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SCZTX653 |
NPN 120V 2A 1W DIODES INC. • Power Dissipation : 1W • Transistor Case Style : E-Line
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- | - | - | 1W | E-Line | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML5203PBF
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SC07008 |
Power MOSFET, P Channel, 30 V, 3 A, 0.098 ohm, SOT-23, Surface Mount INFINEON The IRLML5203PBF from International Rectifier is -30V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching, as a result, power MOSFET are well know to...
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P Channel | 30V | 3A | 1.25W | SOT-23 | 0.098ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STN2NF10
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SC11058 |
Power MOSFET, N Channel, 100 V, 2 A, 0.26 ohm, SOT-223, Surface Mount STMICROELECTRONICS The STN2NF10 is a STripFET™ II N-channel Power MOSFET developed using unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps t...
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N Channel | 100V | 2A | 3.3W | SOT-223 | 0.26ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC857C
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SC06616 |
Transistor, PNP, SOT23 NXP • Power Dissipation : 250mW • Transistor Case Style : SOT-23
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- | - | - | 250mW | SOT-23 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N5195G
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SC06743 |
Transistor, PNP, TO126 ONSEMI The 2N5195G is a 4A silicon PNP Power Transistor designed for use in power amplifier and switching circuits and offers excellent safe area limits. • Complement to NPN 2N5191 and 2N5192
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- | - | - | 40W | TO-225 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX553
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SC10973 |
Transistor, PNP, E-Line DIODES INC. The ZTX553 is a PNP silicon planar medium power Bipolar Transistor offers -1A continuous collector current and -120V collector-base voltage. • -55 to 200°C Operating temperature range
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- | - | - | 1W | E-Line | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ15023G
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SC06786 |
Transistor, PNP, TO3 ONSEMI The MJ15023G is a -200V Silicon PNP Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 350V) • Emitter-base voltage...
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- | - | - | 250W | TO-3 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX614
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SC06839 |
Darlington Transistor, E-Line DIODES INC. The ZTX614 is a NPN silicon planar medium-power Darlington Transistor offers 800mA continuous collector current and 120V collector-base voltage. • Gain of 10K @ IC = 500mA • -55 to 200°C Operating temperature range
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BDX33C
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SC06854 |
Darlington Transistor, TO220 STMICROELECTRONICS The BDX33C is a NPN complementary silicon power Darlington Transistor with built-in epitaxial planar technology. Designed for use in power linear and switching applications. • Complement to BDX34C • 0.25A Base current
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ZVP4424G
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SC11059 |
Power MOSFET, P Channel, 240 V, 480 mA, 9 ohm, SOT-223, Surface Mount DIODES INC. The ZVP4424G is a P-channel enhancement-mode Vertical DMOSFET with moulded plastic case and matte tin finish terminals. It is suitable for electronic hook switches and battery powered equipment applications. • Low threshold and fast switching • Halogen-fre...
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P Channel | 240V | 480mA | 2.5W | SOT-223 | 9ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP30A
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SC06763 |
Transistor, PNP, TO220 MULTICOMP PRO The TIP30A is a PNP high-power Bipolar Transistor offers 0.7V (maximum) collector-emitter saturation voltage at 1A and 3MHz minimum current gain-bandwidth product at 200mA. • -65 to 150°C Operating junction temperature range • Multicomp Pro products are ra...
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- | - | - | 30W | TO-220 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC857,215
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SC06600 |
Transistor, PNP SOT23 NXP • Power Dissipation : 250mW • Transistor Case Style : SOT-23
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- | - | - | 250mW | SOT-23 | - |