MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2342DS-T1-GE3
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SC16873 |
SMD N Channel Power MOSFET, 8V, 6A, 0.014 Ohm, SOT-23 VISHAY • TrenchFET® Power MOSFET • 100% Rg Tested • Built-in ESD Protection - Typical ESD Performance 3000V
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N Channel | 8V | 6A | 0.014ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STW12NK90Z
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SC16965 |
Power MOSFET, N Channel, 900 V, 11 A, 0.72 ohm, TO-247, Through Hole STMICROELECTRONICS • 900V, 11A N-channel zener protected SuperMESH™ power MOSFET in 3 pin TO-247 package • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Very good manufacturing repeatability • Suitable for...
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N Channel | 900V | 11A | 0.72ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS138LT1G
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SC15995 |
Power MOSFET, N Channel, 50V, 200mA, 3.5 Ohm, SOT-23, SMD ONSEMI BSS138LT1G from On Semiconductor is surface mount, 50V N channel power MOSFET in SOT-23 package. Features low threshold voltage, ideal for low voltage applications. Typical applications include DC-DC converters, power management in portable and battery pow...
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N Channel | 50V | 200mA | 3.5ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLR2905ZTRPBF
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SC15967 |
Power MOSFET, N Channel, 55V, 42A, 0.011 Ohm, TO-252AA, SMD INFINEON • Channel Type : N Channel • Drain Source Voltage Vds : 55V • Continuous Drain Current Id : 42A • Drain Source On State Resistance : 0.011ohm
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N Channel | 55V | 42A | 0.011ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ZXMP10A13FTA
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SC16877 |
Power MOSFET, P Channel, 100 V, 700 mA, 1 ohm, SOT-23, Surface Mount DIODES INC. The ZXMP10A13FTA is a P-channel Enhancement Mode MOSFET with matte tin finish annealed over copper lead frame terminals and UL94V-0 flame-rated moulded plastic case. This MOSFET utilizes an unique structure combining the benefits of low on-state resistance...
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P Channel | 100V | 700mA | 1ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSP75N
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SC16889 |
SMD N Channel Power MOSFET Switch, Enhancement Mode, 60V, 1.1A, 0.5 Ohm, SOT 223 DIODES INC. • Short-circuit protection with auto restart • Overvoltage protection (active clamp) • Thermal shutdown with auto restart • Over-current protection • Input protection (ESD) • High continuous current rating • Load dump protection (actively protects load) •...
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N Channel | 60V | 1.1A | 0.55ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RE1C002UNTCL
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SC15965 |
Power MOSFET, N Channel, 20V, 200mA, 0.8 Ohm, SOT-416FL, SMD ROHM • Channel Type : N Channel • Drain Source Voltage Vds : 20V • Continuous Drain Current Id : 200mA • Drain Source On State Resistance : 0.8ohm
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N Channel | 20V | 200mA | 0.8ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VN2222LL-G
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SC15835 |
Power MOSFET, N Channel, 60V, 230mA, 7.5 ohm, TO-92 MICROCHIP • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 230mA • Drain Source On State Resistance : 7.5ohm
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N Channel | 60V | 230mA | 7.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB4410ZPBF
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SC16934 |
Power MOSFET, N Channel, 100 V, 97 A, 0.008 ohm, TO-220AB, Through Hole INFINEON The IRFB4410ZPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptibl...
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N Channel | 100V | 97A | 0.008ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFR5305TRLPBF
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SC16940 |
Power MOSFET, P Channel, 55 V, 31 A, 0.065 ohm, TO-252 (DPAK), Surface Mount INFINEON The IRFR5305TRLPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design...
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P Channel | 55V | 31A | 0.065ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDV303N
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SC16700 |
SMD N Channel Power MOSFET, Digital FET, SOT-23, 680mA, 25V ONSEMI The FDV303N is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been tailored to minimize the onstate resistance and maintain low gate drive conditions....
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N Channel | 25V | 680mA | 0.45ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS3672
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SC16907 |
Power MOSFET, N Channel, 100 V, 7.5 A, 0.019 ohm, SOIC, Surface Mount ONSEMI The FDS3672 is a N-channel MOSFET produced using PowerTrench® process. It is suitable for high voltage synchronous rectifier, DC-to-DC converters and off-line UPS, distributed power architectures and VRMs, primary switch for 24 and 48V systems. • Low mille...
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N Channel | 100V | 7.5A | 0.019ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2305CDS-T1-GE3
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SC16725 |
Power MOSFET, P Channel, 8 V, 5.8 A, 0.028 ohm, SOT-23, Surface Mount VISHAY The SI2305CDS-T1-GE3 is a 8VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and DC-to-DC converter applications. • 100% Rg tested • -55 to 150°C Operating temperature range • Halogen-free
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P Channel | 8V | 5.8A | 0.028ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPP045N10N3GXKSA1
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SC16948 |
Power MOSFET, N Channel, 100 V, 100 A, 0.0039 ohm, TO-220, Through Hole INFINEON The IPP045N10N3 G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM. • World's lowest RDS (ON)...
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N Channel | 100V | 100A | 0.0039ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF530A
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SC16916 |
Power MOSFET, N Channel, 100 V, 14 A, 0.11 ohm, TO-220, Through Hole ONSEMI The IRF530A is a 100V N-channel Advanced Power MOSFET featured with avalanche rugged technology and rugged gate oxide technology. It has lower input capacitance and improved gate charge. • Extended safe operating area • Lower leakage current (10A maximum a...
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N Channel | 100V | 14A | 0.11ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP40NF03L
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SC16918 |
Power MOSFET, N Channel, 30 V, 40 A, 0.022 ohm, TO-220, Through Hole STMICROELECTRONICS The STP40NF03L is a STripFET™ N-channel Power MOSFET developed using unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps th...
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N Channel | 30V | 40A | 0.022ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI7469DP-T1-E3
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SC16866 |
Power MOSFET, P Channel, 80 V, 28 A, 0.021 ohm, PowerPAK SO, Surface Mount VISHAY The SI7469DP-T1-E3 is a -80V P-channel TrenchFET® Power MOSFET. The P-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and with the capability to handle 85A. • Halogen-free according to IEC 61249-2-21 definitio...
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P Channel | 80V | 28A | 0.021ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002NXBKR
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SC15955 |
Power MOSFET, Trench, N Channel, 60V, 270mA, 2.2 Ohm, SOT-23, SMD NEXPERIA • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 270mA • Drain Source On State Resistance : 2.2ohm
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N Channel | 60V | 270mA | 2.2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP45N65M5
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SC15834 |
Power MOSFET, N Channel, 650V, 35A, 0.067 ohm, TO-220 STMICROELECTRONICS The STP45N65M5 is a 650V N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with well-known PowerMESH™ horizontal layout structure. The MOSFET has extremely low on resistance, which is unmatch...
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N Channel | 650V | 35A | 0.067ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF6218STRLPBF
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SC17010 |
Power MOSFET, P Channel, 150 V, 27 A, 0.12 ohm, TO-263 (D2PAK), Surface Mount INFINEON The IRF6218STRLPBF is a HEXFET® single P-channel Power MOSFET offers fully characterized capacitance including effective COSS to simplify design. It is suitable for reset switch for active clamp reset DC-to-DC converters. • Low gate-to-drain charge to redu...
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P Channel | 150V | 27A | 0.12ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9310TRPBF
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SC16838 |
Power MOSFET, P Channel, 30 V, 2 A, 0.0039 ohm, SOIC, Surface Mount INFINEON The IRF9310TRPBF is a HEXFET® single P-channel Power MOSFET for use with battery protection, high side and low side load switch, charge and discharge switch for Notebook PC battery application. • Low RDS (ON) (≤4.6mΩ) results in low conduction losses • Ind...
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P Channel | 30V | 2A | 0.0039ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQPF5N60C
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SC16973 |
Power MOSFET, N Channel, 600 V, 4.5 A, 2.5 ohm, TO-220F, Through Hole ONSEMI The FQPF5N60C is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and wit...
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N Channel | 600V | 4.5A | 2.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXM61N03F
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SC16868 |
Power MOSFET, N Channel, 30 V, 1.4 A, 0.22 ohm, SOT-23, Surface Mount DIODES INC. The ZXM61N03F is a N-channel enhancement mode MOSFET uses diodes proprietary, high density, uses advanced trench technology. Designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. Suitable for low voltage an...
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N Channel | 30V | 1.4A | 0.22ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMV65XP,215
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SC16826 |
Power MOSFET, P Channel, 20 V, 4.3 A, 0.058 ohm, TO-236AB, Surface Mount NEXPERIA The PMV65XP,215 is a P-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Low Threshold Voltage • Low On-state Resistance
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P Channel | 20V | 4.3A | 0.058ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF100B201
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SC16963 |
Power MOSFET, N Channel, 100 V, 192 A, 0.0035 ohm, TO-220AB, Through Hole INFINEON HEXFET® power MOSFET suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redunda...
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N Channel | 100V | 192A | 0.0035ohm |