MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX2301P,215
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SC16710 |
Power MOSFET, P Channel, 20 V, 2 A, 0.1 ohm, SOT-23, Surface Mount NEXPERIA The NX2301P is a P-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • 1.8V RDSon rated for Low Voltage Gate Drive • Very Fast Switching • AEC-Q101 Qualified
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P Channel | 20V | 2A | 0.1ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF520PBF
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SC16914 |
Power MOSFET, N Channel, 100 V, 9.2 A, 0.27 ohm, TO-220AB, Through Hole VISHAY The IRF520PBF is a 100V N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout t...
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N Channel | 100V | 9.2A | 0.27ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STP20NM50
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SC16982 |
Power MOSFET, N Channel, 550 V, 20 A, 0.25 ohm, TO-220, Through Hole STMICROELECTRONICS The STP20NM50 is a MDmesh™ N-channel Power MOSFET associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics and dynamic performa...
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N Channel | 550V | 20A | 0.25ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NX3008PBK,215
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SC16776 |
Power MOSFET, P Channel, 30 V, 230 mA, 2.8 ohm, SOT-23, Surface Mount NEXPERIA The NX3008PBK is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, low-side load-switch, high-speed line driver and switching circuit applications. • Very fast ...
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P Channel | 30V | 230mA | 2.8ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMV32UP,215
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SC16848 |
Power MOSFET, P Channel, 20 V, 4 A, 0.032 ohm, SOT-23, Surface Mount NEXPERIA The PMV32UP is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, High-side load-switch and switching circuit applications. • 1.8V Drain-...
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P Channel | 20V | 4A | 0.032ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS123-7-F
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SC16705 |
Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount DIODES INC. The BSS123-7-F is a N-channel Enhancement Mode MOSFET uses diodes proprietary, high density and uses advanced trench technology. Matte tin finish annealed over alloy 42 lead frame terminals and UL94V-0 flame-rated moulded plastic case. Designed to minimize...
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N Channel | 100V | 170mA | 6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002WT1G
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SC16709 |
Power MOSFET, N Channel, 60 V, 340 mA, 1.19 ohm, SOT-323, Surface Mount ONSEMI The 2N7002WT1G is a N-channel small signal Power MOSFET ideal for low power applications. It offers 60V drain source voltage and 310mA continuous drain current. It is suitable for low side load switch, level shift circuits, DC-to-DC converter, DSC and PDA ...
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N Channel | 60V | 340mA | 1.19ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQ2361ES-T1_GE3
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SC15964 |
Power MOSFET, P Channel, 60V, 2.8A, 0.13 Ohm, SOT-23, SMD VISHAY New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...
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P Channel | 60V | 2.8A | 0.13ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLR7843TRPBF
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SC17008 |
Power MOSFET, N Channel, 30 V, 161 A, 0.0026 ohm, TO-252AA, Surface Mount INFINEON The IRLR7843TRPBF is a HEXFET® single N-channel Power MOSFET offers ultra-low gate impedance, fully characterized avalanche voltage and current. It is suitable for high frequency synchronous buck converters and high frequency isolated DC-to-DC converter wi...
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N Channel | 30V | 161A | 0.0026ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2374DS-T1-GE3
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SC16793 |
Power MOSFET, N Channel, 20V, 5.9A, 0.025 Ohm, SOT-23, SMD VISHAY The SI2374DS-T1-GE3 from Vishay is a 40V SMD Power MOSFET, N Channel transistor in a SOT 23 case. Suitable for load switches and power management applications. • TrenchFET® power MOSFET • 100% tested
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N Channel | 20V | 5.9A | 0.025ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF4905STRLPBF
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SC16867 |
Power MOSFET, P Channel, 55 V, 74 A, 0.02 ohm, TO-263 (D2PAK), Surface Mount INFINEON The IRF4905STRLPBF is a -55V single P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. It features combine to make this design an extremely efficient and reliabl...
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P Channel | 55V | 74A | 0.02ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG2302UK-7
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SC15945 |
Power MOSFET, N Channel, 20V, 2.8A, 0.061 ohm, SOT-23, SMD DIODES INC. DMG2302UK-7 is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications ...
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N Channel | 20V | 2.8A | 0.09ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTR5103NT1G
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SC15962 |
Power MOSFET, N Channel, 60V, 260mA, 1 Ohm, SOT-23, SMD ONSEMI • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 260mA • Drain Source On State Resistance : 1ohm
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N Channel | 60V | 260mA | 1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MTP3055VL
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SC16970 |
Power MOSFET, N Channel, 60 V, 12 A, 0.1 ohm, TO-220AB, Through Hole ONSEMI The MTP3055VL is a N-channel Logic Level MOSFET designed specifically for low voltage, high speed switching applications. This MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is ...
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N Channel | 60V | 12A | 0.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BST82,215
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SC16712 |
Power MOSFET, N Channel, 100 V, 190 mA, 10 ohm, SOT-23, Surface Mount NEXPERIA The BST82 is a N-channel enhancement mode Field-Effect Transistor in surface mount plastic package using Trench MOSFET technology. Suitable for high speed line driver and logic level translator. • Logic-level compatible • Very fast switching
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N Channel | 100V | 190mA | 10ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138DW-7-F
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SC15998 |
Dual MOSFET, N Channel, 50V, 200mA, 3.5 Ohm, SOT-363, SMD DIODES INC. The BSS138DW-7-F is a dual N-channel enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for load switch applications. • Low ON-resistance • Low gate threshold volt...
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7103TRPBF
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SC16693 |
SMD Dual N Channel MOSFET Transistor, SOIC, 50V, 3A INFINEON The IRF7103TRPBF is a dual N-channel MOSFET designed for vapour phase, infrared or wave soldering techniques. It has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of ...
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTD3055L104T4G
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SC16885 |
Power MOSFET, N Channel, 60 V, 12 A, 0.089 ohm, TO-252 (DPAK), Surface Mount ONSEMI The NTD3055L104T4G is a N-channel Power MOSFET designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. • Lower RDS (ON) • Lower VDS (ON) • Lower and tighter VSD • Lower diode r...
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N Channel | 60V | 12A | 0.089ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SUM110P08-11L-E3
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SC16891 |
Power MOSFET, P Channel, 80 V, 110 A, 0.0093 ohm, TO-263 (D2PAK), Surface Mount VISHAY The SUM110P08-11L-E3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage
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P Channel | 80V | 110A | 0.0093ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMP4A16GTA
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SC16849 |
Power MOSFET, P Channel, 40 V, 6.4 A, 0.06 ohm, SOT-223, Surface Mount DIODES INC. The ZXMP4A16GTA is a -40V P-channel Enhancement Mode DMOSFET designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Low input capacitance • Low on-r...
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P Channel | 40V | 6.4A | 0.06ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD18543Q3AT
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SC16685 |
SMD Power MOSFET N Channel NexFET Transistor, 60V, 35A TEXAS INSTRUMENTS • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 35A • Drain Source On State Resistance : 0.0081ohm
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N Channel | 60V | 35A | 0.0081ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMS6004FFTA
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SC16713 |
Power MOSFET, N Channel, 60 V, 2 A, 0.5 ohm, SOT-23F, Surface Mount DIODES INC. ZXMS6004FFTA is an INTELLIFET™ N-channel self protected enhancement mode MOSFET with logic level input. It integrates over-temperature, over-current, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6004FF is ideal as a gener...
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N Channel | 60V | 2A | 0.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7319TRPBF
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SC16802 |
Dual MOSFET, Complementary N and P Channel, 30V, 6.5A, 0.023 Ohm, SOIC, Surface Mount INFINEON • Generation V Technology • Ultra low On-Resistance
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Complementary N and P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTD20P06LT4G
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SC16990 |
Power MOSFET, P Channel, 60 V, 15.5 A, 0.143 ohm, TO-252 (DPAK), Surface Mount ONSEMI The NTD20P06LT4G is a -60V Single P-channel Power MOSFET designed for bridge circuits, power supplies and power motor controls as well as DC-DC conversion. The MOSFET withstands high energy in avalanche and commutation modes. • Low gate charge for fast swi...
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P Channel | 60V | 15.5A | 0.143ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTR4501NT1G
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SC16717 |
Power MOSFET, N Channel, 20 V, 3.2 A, 0.08 ohm, SOT-23, Surface Mount ONSEMI The NTR4501NT1G is a 20V N-channel Power MOSFET with leading planar technology for low gate charge/fast switching. It is suitable with DC-DC conversion, load/power switch for portables and computing. • 2.5V Rated for low voltage gate drive • ±12V Gate to s...
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N Channel | 20V | 3.2A | 0.08ohm |