MOSFET Transistors

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NX3008NBK,215
NX3008NBK,215 - Power MOSFET, Trench, N Channel, 30 V, 400 mA, 1 ohm, SOT-23, Surface Mount

SC16715

Power MOSFET, Trench, N Channel, 30 V, 400 mA, 1 ohm, SOT-23, Surface Mount

NEXPERIA

The NX3008NBK from NXP is a surface mount, 30V N channel enhancement mode field effect transistor in SOT-23 (TO-236AB) package using TrenchMOS technology. This transistor features very high speed switching, low threshold voltage and ESD protection up to 2K...

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N Channel 30V 400mA 1ohm
IRFP9140NPBF
IRFP9140NPBF - Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-247AC, Through Hole

SC17021

Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-247AC, Through Hole

INFINEON

The IRFP9140NPBF is a -100V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized ...

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P Channel 100V 23A 0.117ohm
BSS138W
BSS138W - Power MOSFET, N Channel, 50V, 210mA, 1.17 Ohm, SOT-323, SMD

SC16001

Power MOSFET, N Channel, 50V, 210mA, 1.17 Ohm, SOT-323, SMD

ONSEMI

The BSS138W is a N-channel enhancement-mode FET designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It is particularly suited for low voltage, low current applications such as power MOSFET gate drivers an...

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N Channel 50V 210mA 1.17ohm
DMN6140L-13
DMN6140L-13 - Power MOSFET, N Channel, 60V, 1.6A, 0.092 Ohm, SOT-23, SMD

SC15973

Power MOSFET, N Channel, 60V, 1.6A, 0.092 Ohm, SOT-23, SMD

DIODES INC.

DMN6140L-13 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical...

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N Channel 60V 1.6A 0.092ohm
DMP1045U
DMP1045U - Power MOSFET, Enhancement Mode, P Channel, 12 V, 5.2 A, 0.026 ohm, SOT-23, Surface Mount

SC16904

Power MOSFET, Enhancement Mode, P Channel, 12 V, 5.2 A, 0.026 ohm, SOT-23, Surface Mount

DIODES INC.

The DMP1045U from Diode Inc is a surface mount, P channel enhancement mode MOSFET in SOT-23 package. This device features low on resistance, low input capacitance, fast switching speed and low input/output leakage thus it is ideal for high efficiency power...

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P Channel 12V 5.2A 0.026ohm
BSS84LT1G
BSS84LT1G - Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-23, Surface Mount

SC16708

Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-23, Surface Mount

ONSEMI

The BSS84LT1G is a P-channel Power MOSFET qualified to AEC Q101 and PPAP capable. It is suitable for DC-DC converters and load switching applications.

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P Channel 50V 130mA 10ohm
NX3008NBKW,115
NX3008NBKW,115 - Power MOSFET, N Channel, 30 V, 350 mA, 1 ohm, SOT-323, Surface Mount

SC16748

Power MOSFET, N Channel, 30 V, 350 mA, 1 ohm, SOT-323, Surface Mount

NEXPERIA

The NX3008NBKW is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, low-side load-switch, high-speed line driver and switching circuit applications. • Very fast...

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N Channel 30V 350mA 1ohm
IRFB3607PBF
IRFB3607PBF - Power MOSFET, N Channel, 75 V, 80 A, 0.00734 ohm, TO-220AB, Through Hole

SC16895

Power MOSFET, N Channel, 75 V, 80 A, 0.00734 ohm, TO-220AB, Through Hole

INFINEON

The IRFB3607PBF is a 75V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible ...

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N Channel 75V 80A 0.00734ohm
SI2365EDS-T1-GE3
SI2365EDS-T1-GE3 - SMD P Channel Power MOSFET, 20V, 5.9A, 0.0265 Ohm, SOT-23

SC16859

SMD P Channel Power MOSFET, 20V, 5.9A, 0.0265 Ohm, SOT-23

VISHAY

• Suitable for power management applications for portable and consumer i.e load switches and DC/DC converters • TrenchFET® Power MOSFET • 100% Rg Tested • Built-in ESD Protection - Typical ESD Performance 3000V

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P Channel 20V 5.9A 0.0265ohm
BSS138-7-F
BSS138-7-F - Power MOSFET, N Channel, 50V, 200mA, 1.4 Ohm, SOT-23, SMD

SC15996

Power MOSFET, N Channel, 50V, 200mA, 1.4 Ohm, SOT-23, SMD

DIODES INC.

The BSS138-7-F is a 50V N-channel enhancement mode MOSFET with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. The case is made of molded plastic (UL94V-0). The MOSFET features low gate threshold voltage, fast switc...

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N Channel 50V 200mA 3.5ohm
DMC2400UV-7
DMC2400UV-7 - SMD Dual MOSFET Complementary N and P Channel Transistor, SOT-563, 20V, 1.03A

SC16695

SMD Dual MOSFET Complementary N and P Channel Transistor, SOT-563, 20V, 1.03A

DIODES INC.

DMC2400UV-7 is a complementary pair enhancement mode MOSFET in 6 pin SOT-563 package. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high effic...

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Complementary N and P Channel - - -
SI2336DS-T1-GE3
SI2336DS-T1-GE3 - Power MOSFET, N Channel, 30 V, 5.2 A, 0.034 ohm, SOT-23, Surface Mount

SC16781

Power MOSFET, N Channel, 30 V, 5.2 A, 0.034 ohm, SOT-23, Surface Mount

VISHAY

• N-channel 30V (D-S) TrenchFET® power MOSFET • 100% Rg tested • Used in DC/DC converters, boost converters

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N Channel 30V 5.2A 0.034ohm
BSS138W-7-F
BSS138W-7-F - Power MOSFET, N Channel, 50V, 200mA, 3.5 Ohm, SOT-323, SMD

SC16004

Power MOSFET, N Channel, 50V, 200mA, 3.5 Ohm, SOT-323, SMD

DIODES INC.

The BSS138W-7-F is a N-channel enhancement-mode DMOSFET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. • Low ON-resistance • Low gate threshold voltage • Low input capacitance • F...

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N Channel 50V 200mA 3.5ohm
2N7002PW,115
2N7002PW,115 - Power MOSFET, N Channel, 60V, 310mA, 1 Ohm, SOT-323, SMD

SC15988

Power MOSFET, N Channel, 60V, 310mA, 1 Ohm, SOT-323, SMD

NEXPERIA

The 2N7002PW is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic Level Compatible • Very Fast Switching • ESD Protection Upto 1.5kV • AEC-Q101 Qualified

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N Channel 60V 310mA 1ohm
FDN306P
FDN306P - Power MOSFET, P Channel, 12 V, 2.6 A, 0.04 ohm, SuperSOT, Surface Mount

SC16722

Power MOSFET, P Channel, 12 V, 2.6 A, 0.04 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN306P is a P-channel 1.8V specified MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management applications. • Fast switching • High performance trench technology for extremely low RDS

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P Channel 12V 2.6A 0.04ohm
IRLML2244TRPBF
IRLML2244TRPBF - Power MOSFET, P Channel, 20 V, 4.3 A, 0.042 ohm, SOT-23, Surface Mount

SC16759

Power MOSFET, P Channel, 20 V, 4.3 A, 0.042 ohm, SOT-23, Surface Mount

INFINEON

The IRLML2244TRPBF is a P-channel HEXFET® Power MOSFET compatible with existing surface mount techniques. This transistor features lower switching losses, increased reliability and environmentally friendly. • Multi-vendor compatibility • Industry standard ...

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P Channel 20V 4.3A 0.042ohm
BSS84AK,215
BSS84AK,215 - Power MOSFET, P Channel, 50 V, 180 mA, 4.5 ohm, SOT-23, Surface Mount

SC16767

Power MOSFET, P Channel, 50 V, 180 mA, 4.5 ohm, SOT-23, Surface Mount

NEXPERIA

The BSS84AK is a P-channel enhancement mode Field-Effect Transistor in surface mount plastic package using Trench MOSFET technology. Logic-level compatible and very fast switching. Suitable for relay driver and high-speed line driver. • AEC-Q101 Qualified ...

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P Channel 50V 180mA 4.5ohm
BUK9875-100A/CUX
BUK9875-100A/CUX - Power MOSFET, N Channel, 100V, 7A, 0.062 ohm, SOT-223, SMD

SC15953

Power MOSFET, N Channel, 100V, 7A, 0.062 ohm, SOT-223, SMD

NEXPERIA

• Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 7A • Drain Source On State Resistance : 0.062ohm

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N Channel 100V 7A 0.062ohm
STP55NF06
STP55NF06 - Power MOSFET, N Channel, 60V, 50A, 0.015 ohm, TO-220

SC15840

Power MOSFET, N Channel, 60V, 50A, 0.015 ohm, TO-220

STMICROELECTRONICS

The STP55NF06 is a 60V N-channel Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC conv...

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N Channel 60V 50A 0.015ohm
NDS331N
NDS331N - SMD N Channel, Logic Level Enhancement Mode Power MOSFET Transistor, SuperSOT, 20V, 1.3A

SC16701

SMD N Channel, Logic Level Enhancement Mode Power MOSFET Transistor, SuperSOT, 20V, 1.3A

ONSEMI

The NDS331N is a N-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance. Suited for low voltage applications in PC...

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N Channel 20V 1.3A 0.11ohm
BSS138BKW,115
BSS138BKW,115 - Power MOSFET, N Channel, 60 V, 320 mA, 1 ohm, SOT-323, Surface Mount

SC16779

Power MOSFET, N Channel, 60 V, 320 mA, 1 ohm, SOT-323, Surface Mount

NEXPERIA

The BSS138BKW is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. The N-channel Trench MOSFET suitable for relay driver, high-speed line driver, low-side load switch and switching circuit application...

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N Channel 60V 320mA 1ohm
IRFR5305TRPBF
IRFR5305TRPBF - Power MOSFET, P Channel, 55 V, 31 A, 0.065 ohm, TO-252AA, Surface Mount

SC17018

Power MOSFET, P Channel, 55 V, 31 A, 0.065 ohm, TO-252AA, Surface Mount

INFINEON

The IRFR5305TRPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized ...

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P Channel 55V 31A 0.065ohm
LP0701N3-G
LP0701N3-G - P Channel Power MOSFET, 16.5V, 500mA, 1.3 Ohm, TO-92

SC16975

P Channel Power MOSFET, 16.5V, 500mA, 1.3 Ohm, TO-92

MICROCHIP

This enhancement-mode (normally-off) transistor utilises a lateral MOS structure and Supertex’s well-proven silicongate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistor and with the high i...

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P Channel 16.5V 500mA 1.3ohm
IRLR024NTRPBF
IRLR024NTRPBF - Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-252AA, Surface Mount

SC17020

Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-252AA, Surface Mount

INFINEON

The IRLR024NTRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device d...

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N Channel 55V 17A 0.065ohm
IRFP140NPBF
IRFP140NPBF - Power MOSFET, HEXFET, N Channel, 100 V, 33 A, 0.052 ohm, TO-247AC, Through Hole

SC16983

Power MOSFET, HEXFET, N Channel, 100 V, 33 A, 0.052 ohm, TO-247AC, Through Hole

INFINEON

The IRFP140NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated

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N Channel 100V 33A 0.052ohm