Single MOSFET Transistors

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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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DMG2307L
DMG2307L - Power MOSFET, Enhancement Mode, P Channel, 30 V, 4.6 A, 0.09 ohm, SOT-23, Surface Mount

SC16771

Power MOSFET, Enhancement Mode, P Channel, 30 V, 4.6 A, 0.09 ohm, SOT-23, Surface Mount

DIODES INC.

The DMG2307L is a P-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain super...

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P Channel 30V 4.6A 0.09ohm SOT-23 Surface Mount 10V 1V 760mW 3Pins 150°C - -
PMV130ENEAR
PMV130ENEAR - SMD N Channel Power MOSFET FET Transistor, 40V, 2.1A, 0.095 Ohm, SOT-23

SC16922

SMD N Channel Power MOSFET FET Transistor, 40V, 2.1A, 0.095 Ohm, SOT-23

NEXPERIA

The PMV130ENEAR from NEXPERIA is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable applications: Relay driver, High-speed line driv...

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N Channel 40V 2.1A 0.095ohm SOT-23 Surface Mount 10V 1.6V 460mW 3Pins 150°C - -
IRLML9303TRPBF
IRLML9303TRPBF - Power MOSFET, P Channel, 30 V, 2.3 A, 0.135 ohm, SOT-23, Surface Mount

SC16991

Power MOSFET, P Channel, 30 V, 2.3 A, 0.135 ohm, SOT-23, Surface Mount

INFINEON

The IRLML9303TRPBF is a HEXFET® single P-channel Power MOSFET offers industry standard pin-out for multi-vendor compatibility. It is suitable for load/system switch, DC switches and battery protection. It is compatible with existing surface-mount technique...

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P Channel 30V 2.3A 0.135ohm SOT-23 Surface Mount 10V 1.3V 1.25W 3Pins 150°C - -
BS170-D75Z
BS170-D75Z - Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-226AA, Through Hole

SC16845

Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-226AA, Through Hole

ONSEMI

The BS170_D75Z is a N-channel enhancement-mode FET produced using high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring...

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N Channel 60V 500mA 1.2ohm TO-226AA Through Hole 10V 2.1V 830mW 3Pins 150°C - -
PMV40UN2R
PMV40UN2R - Power MOSFET, N Channel, 30 V, 4.4 A, 0.036 ohm, SOT-23, Surface Mount

SC16783

Power MOSFET, N Channel, 30 V, 4.4 A, 0.036 ohm, SOT-23, Surface Mount

NEXPERIA

The PMV40UN2 is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in LED driver, low-side load-switch and switching circuit applications. • Low threshold voltage • Very fast swi...

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N Channel 30V 4.4A 0.036ohm SOT-23 Surface Mount 4.5V 650mV 490mW 3Pins 150°C - -
ZVN3306F
ZVN3306F - SMD N Channel Power MOSFET, Vertical DMOS FET, 60V, 150mA, 5 Ohm, SOT 23

SC16839

SMD N Channel Power MOSFET, Vertical DMOS FET, 60V, 150mA, 5 Ohm, SOT 23

DIODES INC.

• Complement to ZVP3306F • AEC-Q101 Qualified • PPAP capable

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N Channel 60V 150mA 5ohm SOT-23 Surface Mount 10V 2.4V 330mW 3Pins 150°C - -
MMBF170LT1G
MMBF170LT1G - SMD N Channel Power MOSFET Transistor, N Channel, 60 V, 500 mA, 5 ohm, SOT-23, Surface Mount

SC16703

SMD N Channel Power MOSFET Transistor, N Channel, 60 V, 500 mA, 5 ohm, SOT-23, Surface Mount

ONSEMI

The MMBF170LT1G is a N-channel Power MOSFET with drain source voltage at 60VDC and drain current at 500mA. • AEC-Q101 Qualified • PPAP capable

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N Channel 60V 500mA 5ohm SOT-23 Surface Mount 10V 3V 225mW 3Pins 150°C - -
STP80NF55-08
STP80NF55-08 - Power MOSFET, N Channel, 55 V, 80 A, 0.008 ohm, TO-220, Through Hole

SC16956

Power MOSFET, N Channel, 55 V, 80 A, 0.008 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP80NF55-08 from STMicroelectronics is a through hole, 55V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET designed in unique Single Feature Size strip based process, resulting transistor shows extremely high packing density fo...

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N Channel 55V 80A 0.008ohm TO-220 Through Hole 10V 3V 300W 3Pins 175°C - -
FDP33N25
FDP33N25 - Power MOSFET, N Channel, 250 V, 33 A, 0.094 ohm, TO-220, Through Hole

SC16999

Power MOSFET, N Channel, 250 V, 33 A, 0.094 ohm, TO-220, Through Hole

ONSEMI

The FDP33N25 is an UniFET™ N-channel high voltage MOSFET produced based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. It is suitable f...

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N Channel 250V 33A 0.094ohm TO-220 Through Hole 10V 5V 235W 3Pins 150°C - -
IRF710PBF
IRF710PBF - Power MOSFET, N Channel, 400 V, 1.5 A, 3.6 ohm, TO-220AB, Through Hole

SC16964

Power MOSFET, N Channel, 400 V, 1.5 A, 3.6 ohm, TO-220AB, Through Hole

VISHAY

The IRF710PBF is a 400V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industr...

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N Channel 400V 1.5A 3.6ohm TO-220AB Through Hole 10V 4V 20W 3Pins 150°C - -
SUM90P10-19L-E3
SUM90P10-19L-E3 - Power MOSFET, P Channel, 100 V, 90 A, 0.0156 ohm, TO-263 (D2PAK), Surface Mount

SC16855

Power MOSFET, P Channel, 100 V, 90 A, 0.0156 ohm, TO-263 (D2PAK), Surface Mount

VISHAY

The SUM90P10-19L-E3 is a -100V P-channel TrenchFET® Power MOSFET.

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P Channel 100V 90A 0.0156ohm TO-263 (D2PAK) Surface Mount 10V 3V 375W 3Pins 175°C - -
FDV305N
FDV305N - Power MOSFET, N Channel, 20 V, 900 mA, 0.22 ohm, SOT-23, Surface Mount

SC16822

Power MOSFET, N Channel, 20 V, 900 mA, 0.22 ohm, SOT-23, Surface Mount

ONSEMI

The FDV305N is a N-channel MOSFET uses high voltage PowerTrench® process. It has been optimized for load switch and battery protection applications. • Low gate charge • Fast switching speed • High performance Trench technology for extremely low RDS (ON)

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N Channel 20V 900mA 0.22ohm SOT-23 Surface Mount 4.5V 1V 350mW 3Pins 150°C - -
2N7000-G
2N7000-G - Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

SC16917

Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

MICROCHIP

• 60V, 5ohm, N-channel, enhancement-mode, vertical DMOS FET • Free from secondary breakdown • Low power drive requirement • Ease of paralleling • Low CISS and fast switching speeds • Excellent thermal stability • Integral source-drain diode • High input i...

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N Channel 60V 200mA 5ohm TO-92 Through Hole 10V 3V 1W 3Pins 150°C - -
DMP2035U-7
DMP2035U-7 - Power MOSFET, P Channel, 20V, 3.6A, 0.023 Ohm, SOT-23, SMD

SC15959

Power MOSFET, P Channel, 20V, 3.6A, 0.023 Ohm, SOT-23, SMD

DIODES INC.

DMP2035U-7 is a P-channel enhancement mode MOSFET. • Low on-resistance, low input capacitance, fast switching speed • Low input/output leakage, ESD protected • Drain-source voltage is -20V at TA = +25°C • Gate-source voltage is ±10V at TA = +25°C • Continu...

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P Channel 20V 3.6A 0.035ohm SOT-23 Surface Mount 4.5V 700mV 810mW 3Pins 150°C - -
IRFP250MPBF
IRFP250MPBF - Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through Hole

SC16971

Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through Hole

INFINEON

• Single N-channel HEXFET® power MOSFET • Advanced process technology • Fast switching • Fully avalanche rated • Dynamic dv/dt rating • Ease of paralleling • Simple drive requirements • Planar cell structure for wide SOA • Product qualification according ...

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N Channel 200V 30A 0.075ohm TO-247AC Through Hole 10V 4V 214W 3Pins 175°C HEXFET -
IRF9540PBF
IRF9540PBF - Power MOSFET, P Channel, 100 V, 19 A, 0.2 ohm, TO-220AB, Through Hole

SC16949

Power MOSFET, P Channel, 100 V, 19 A, 0.2 ohm, TO-220AB, Through Hole

VISHAY

The IRF9540PBF is a -100V P-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout...

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P Channel 100V 19A 0.2ohm TO-220AB Through Hole 10V 4V 150W 3Pins 175°C - -
SI2342DS-T1-GE3
SI2342DS-T1-GE3 - SMD N Channel Power MOSFET, 8V, 6A, 0.014 Ohm, SOT-23

SC16873

SMD N Channel Power MOSFET, 8V, 6A, 0.014 Ohm, SOT-23

VISHAY

• TrenchFET® Power MOSFET • 100% Rg Tested • Built-in ESD Protection - Typical ESD Performance 3000V

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N Channel 8V 6A 0.014ohm SOT-23 Surface Mount 4.5V 800mV 2.5W 3Pins 150°C TrenchFET -
STW12NK90Z
STW12NK90Z - Power MOSFET, N Channel, 900 V, 11 A, 0.72 ohm, TO-247, Through Hole

SC16965

Power MOSFET, N Channel, 900 V, 11 A, 0.72 ohm, TO-247, Through Hole

STMICROELECTRONICS

• 900V, 11A N-channel zener protected SuperMESH™ power MOSFET in 3 pin TO-247 package • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Very good manufacturing repeatability • Suitable for...

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N Channel 900V 11A 0.72ohm TO-247 Through Hole 10V 3.75V 230W 3Pins 150°C - -
BSS138LT1G
BSS138LT1G - Power MOSFET, N Channel, 50V, 200mA, 3.5 Ohm, SOT-23, SMD

SC15995

Power MOSFET, N Channel, 50V, 200mA, 3.5 Ohm, SOT-23, SMD

ONSEMI

BSS138LT1G from On Semiconductor is surface mount, 50V N channel power MOSFET in SOT-23 package. Features low threshold voltage, ideal for low voltage applications. Typical applications include DC-DC converters, power management in portable and battery pow...

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N Channel 50V 200mA 3.5ohm SOT-23 Surface Mount 5V 1.5V 225mW 3Pins 150°C - -
IRLR2905ZTRPBF
IRLR2905ZTRPBF - Power MOSFET, N Channel, 55V, 42A, 0.011 Ohm, TO-252AA, SMD

SC15967

Power MOSFET, N Channel, 55V, 42A, 0.011 Ohm, TO-252AA, SMD

INFINEON

• Channel Type : N Channel • Drain Source Voltage Vds : 55V • Continuous Drain Current Id : 42A • Drain Source On State Resistance : 0.011ohm • Transistor Case Style : TO-252AA • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3V • Power Dissipation : 110W • No. of Pins : 3Pins • Operating Temperature Max : 175°C • Product Range : HEXFET

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N Channel 55V 42A 0.011ohm TO-252AA Surface Mount 10V 3V 110W 3Pins 175°C HEXFET -
ZXMP10A13FTA
ZXMP10A13FTA - Power MOSFET, P Channel, 100 V, 700 mA, 1 ohm, SOT-23, Surface Mount

SC16877

Power MOSFET, P Channel, 100 V, 700 mA, 1 ohm, SOT-23, Surface Mount

DIODES INC.

The ZXMP10A13FTA is a P-channel Enhancement Mode MOSFET with matte tin finish annealed over copper lead frame terminals and UL94V-0 flame-rated moulded plastic case. This MOSFET utilizes an unique structure combining the benefits of low on-state resistance...

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P Channel 100V 700mA 1ohm SOT-23 Surface Mount 10V 4V 625mW 3Pins 150°C - -
BSP75N
BSP75N - SMD N Channel Power MOSFET Switch, Enhancement Mode, 60V, 1.1A, 0.5 Ohm, SOT 223

SC16889

SMD N Channel Power MOSFET Switch, Enhancement Mode, 60V, 1.1A, 0.5 Ohm, SOT 223

DIODES INC.

• Short-circuit protection with auto restart • Overvoltage protection (active clamp) • Thermal shutdown with auto restart • Over-current protection • Input protection (ESD) • High continuous current rating • Load dump protection (actively protects load) •...

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N Channel 60V 1.1A 0.55ohm SOT-223 Surface Mount 10V 2.1V 1.5W 3Pins 150°C - -
RE1C002UNTCL
RE1C002UNTCL - Power MOSFET, N Channel, 20V, 200mA, 0.8 Ohm, SOT-416FL, SMD

SC15965

Power MOSFET, N Channel, 20V, 200mA, 0.8 Ohm, SOT-416FL, SMD

ROHM

• Channel Type : N Channel • Drain Source Voltage Vds : 20V • Continuous Drain Current Id : 200mA • Drain Source On State Resistance : 0.8ohm • Transistor Case Style : SOT-416FL • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 2.5V • Gate Source Threshold Voltage Max : 1V • Power Dissipation : 150mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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N Channel 20V 200mA 0.8ohm SOT-416FL Surface Mount 2.5V 1V 150mW 3Pins 150°C - -
VN2222LL-G
VN2222LL-G - Power MOSFET, N Channel, 60V, 230mA, 7.5 ohm, TO-92

SC15835

Power MOSFET, N Channel, 60V, 230mA, 7.5 ohm, TO-92

MICROCHIP

• Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 230mA • Drain Source On State Resistance : 7.5ohm • Transistor Case Style : TO-92 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2.5V • Power Dissipation : 1W • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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N Channel 60V 230mA 7.5ohm TO-92 Through Hole 10V 2.5V 1W 3Pins 150°C - -
IRFB4410ZPBF
IRFB4410ZPBF - Power MOSFET, N Channel, 100 V, 97 A, 0.008 ohm, TO-220AB, Through Hole

SC16934

Power MOSFET, N Channel, 100 V, 97 A, 0.008 ohm, TO-220AB, Through Hole

INFINEON

The IRFB4410ZPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptibl...

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N Channel 100V 97A 0.008ohm TO-220AB Through Hole 10V 4V 230W 3Pins 175°C - -