Single MOSFET Transistors
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG2307L
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SC16771 |
Power MOSFET, Enhancement Mode, P Channel, 30 V, 4.6 A, 0.09 ohm, SOT-23, Surface Mount DIODES INC. The DMG2307L is a P-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain super...
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P Channel | 30V | 4.6A | 0.09ohm | SOT-23 | Surface Mount | 10V | 1V | 760mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMV130ENEAR
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SC16922 |
SMD N Channel Power MOSFET FET Transistor, 40V, 2.1A, 0.095 Ohm, SOT-23 NEXPERIA The PMV130ENEAR from NEXPERIA is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable applications: Relay driver, High-speed line driv...
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N Channel | 40V | 2.1A | 0.095ohm | SOT-23 | Surface Mount | 10V | 1.6V | 460mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLML9303TRPBF
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SC16991 |
Power MOSFET, P Channel, 30 V, 2.3 A, 0.135 ohm, SOT-23, Surface Mount INFINEON The IRLML9303TRPBF is a HEXFET® single P-channel Power MOSFET offers industry standard pin-out for multi-vendor compatibility. It is suitable for load/system switch, DC switches and battery protection. It is compatible with existing surface-mount technique...
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P Channel | 30V | 2.3A | 0.135ohm | SOT-23 | Surface Mount | 10V | 1.3V | 1.25W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BS170-D75Z
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SC16845 |
Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-226AA, Through Hole ONSEMI The BS170_D75Z is a N-channel enhancement-mode FET produced using high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring...
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N Channel | 60V | 500mA | 1.2ohm | TO-226AA | Through Hole | 10V | 2.1V | 830mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMV40UN2R
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SC16783 |
Power MOSFET, N Channel, 30 V, 4.4 A, 0.036 ohm, SOT-23, Surface Mount NEXPERIA The PMV40UN2 is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in LED driver, low-side load-switch and switching circuit applications. • Low threshold voltage • Very fast swi...
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N Channel | 30V | 4.4A | 0.036ohm | SOT-23 | Surface Mount | 4.5V | 650mV | 490mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN3306F
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SC16839 |
SMD N Channel Power MOSFET, Vertical DMOS FET, 60V, 150mA, 5 Ohm, SOT 23 DIODES INC. • Complement to ZVP3306F • AEC-Q101 Qualified • PPAP capable
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N Channel | 60V | 150mA | 5ohm | SOT-23 | Surface Mount | 10V | 2.4V | 330mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBF170LT1G
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SC16703 |
SMD N Channel Power MOSFET Transistor, N Channel, 60 V, 500 mA, 5 ohm, SOT-23, Surface Mount ONSEMI The MMBF170LT1G is a N-channel Power MOSFET with drain source voltage at 60VDC and drain current at 500mA. • AEC-Q101 Qualified • PPAP capable
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N Channel | 60V | 500mA | 5ohm | SOT-23 | Surface Mount | 10V | 3V | 225mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP80NF55-08
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SC16956 |
Power MOSFET, N Channel, 55 V, 80 A, 0.008 ohm, TO-220, Through Hole STMICROELECTRONICS The STP80NF55-08 from STMicroelectronics is a through hole, 55V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET designed in unique Single Feature Size strip based process, resulting transistor shows extremely high packing density fo...
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N Channel | 55V | 80A | 0.008ohm | TO-220 | Through Hole | 10V | 3V | 300W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDP33N25
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SC16999 |
Power MOSFET, N Channel, 250 V, 33 A, 0.094 ohm, TO-220, Through Hole ONSEMI The FDP33N25 is an UniFET™ N-channel high voltage MOSFET produced based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. It is suitable f...
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N Channel | 250V | 33A | 0.094ohm | TO-220 | Through Hole | 10V | 5V | 235W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF710PBF
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SC16964 |
Power MOSFET, N Channel, 400 V, 1.5 A, 3.6 ohm, TO-220AB, Through Hole VISHAY The IRF710PBF is a 400V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industr...
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N Channel | 400V | 1.5A | 3.6ohm | TO-220AB | Through Hole | 10V | 4V | 20W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SUM90P10-19L-E3
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SC16855 |
Power MOSFET, P Channel, 100 V, 90 A, 0.0156 ohm, TO-263 (D2PAK), Surface Mount VISHAY The SUM90P10-19L-E3 is a -100V P-channel TrenchFET® Power MOSFET.
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P Channel | 100V | 90A | 0.0156ohm | TO-263 (D2PAK) | Surface Mount | 10V | 3V | 375W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDV305N
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SC16822 |
Power MOSFET, N Channel, 20 V, 900 mA, 0.22 ohm, SOT-23, Surface Mount ONSEMI The FDV305N is a N-channel MOSFET uses high voltage PowerTrench® process. It has been optimized for load switch and battery protection applications. • Low gate charge • Fast switching speed • High performance Trench technology for extremely low RDS (ON)
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N Channel | 20V | 900mA | 0.22ohm | SOT-23 | Surface Mount | 4.5V | 1V | 350mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7000-G
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SC16917 |
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole MICROCHIP • 60V, 5ohm, N-channel, enhancement-mode, vertical DMOS FET • Free from secondary breakdown • Low power drive requirement • Ease of paralleling • Low CISS and fast switching speeds • Excellent thermal stability • Integral source-drain diode • High input i...
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N Channel | 60V | 200mA | 5ohm | TO-92 | Through Hole | 10V | 3V | 1W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP2035U-7
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SC15959 |
Power MOSFET, P Channel, 20V, 3.6A, 0.023 Ohm, SOT-23, SMD DIODES INC. DMP2035U-7 is a P-channel enhancement mode MOSFET. • Low on-resistance, low input capacitance, fast switching speed • Low input/output leakage, ESD protected • Drain-source voltage is -20V at TA = +25°C • Gate-source voltage is ±10V at TA = +25°C • Continu...
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P Channel | 20V | 3.6A | 0.035ohm | SOT-23 | Surface Mount | 4.5V | 700mV | 810mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP250MPBF
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SC16971 |
Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through Hole INFINEON • Single N-channel HEXFET® power MOSFET • Advanced process technology • Fast switching • Fully avalanche rated • Dynamic dv/dt rating • Ease of paralleling • Simple drive requirements • Planar cell structure for wide SOA • Product qualification according ...
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N Channel | 200V | 30A | 0.075ohm | TO-247AC | Through Hole | 10V | 4V | 214W | 3Pins | 175°C | HEXFET | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9540PBF
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SC16949 |
Power MOSFET, P Channel, 100 V, 19 A, 0.2 ohm, TO-220AB, Through Hole VISHAY The IRF9540PBF is a -100V P-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout...
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P Channel | 100V | 19A | 0.2ohm | TO-220AB | Through Hole | 10V | 4V | 150W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2342DS-T1-GE3
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SC16873 |
SMD N Channel Power MOSFET, 8V, 6A, 0.014 Ohm, SOT-23 VISHAY • TrenchFET® Power MOSFET • 100% Rg Tested • Built-in ESD Protection - Typical ESD Performance 3000V
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N Channel | 8V | 6A | 0.014ohm | SOT-23 | Surface Mount | 4.5V | 800mV | 2.5W | 3Pins | 150°C | TrenchFET | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW12NK90Z
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SC16965 |
Power MOSFET, N Channel, 900 V, 11 A, 0.72 ohm, TO-247, Through Hole STMICROELECTRONICS • 900V, 11A N-channel zener protected SuperMESH™ power MOSFET in 3 pin TO-247 package • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Very good manufacturing repeatability • Suitable for...
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N Channel | 900V | 11A | 0.72ohm | TO-247 | Through Hole | 10V | 3.75V | 230W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138LT1G
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SC15995 |
Power MOSFET, N Channel, 50V, 200mA, 3.5 Ohm, SOT-23, SMD ONSEMI BSS138LT1G from On Semiconductor is surface mount, 50V N channel power MOSFET in SOT-23 package. Features low threshold voltage, ideal for low voltage applications. Typical applications include DC-DC converters, power management in portable and battery pow...
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N Channel | 50V | 200mA | 3.5ohm | SOT-23 | Surface Mount | 5V | 1.5V | 225mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLR2905ZTRPBF
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SC15967 |
Power MOSFET, N Channel, 55V, 42A, 0.011 Ohm, TO-252AA, SMD INFINEON • Channel Type : N Channel • Drain Source Voltage Vds : 55V • Continuous Drain Current Id : 42A • Drain Source On State Resistance : 0.011ohm • Transistor Case Style : TO-252AA • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3V • Power Dissipation : 110W • No. of Pins : 3Pins • Operating Temperature Max : 175°C • Product Range : HEXFET
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N Channel | 55V | 42A | 0.011ohm | TO-252AA | Surface Mount | 10V | 3V | 110W | 3Pins | 175°C | HEXFET | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMP10A13FTA
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SC16877 |
Power MOSFET, P Channel, 100 V, 700 mA, 1 ohm, SOT-23, Surface Mount DIODES INC. The ZXMP10A13FTA is a P-channel Enhancement Mode MOSFET with matte tin finish annealed over copper lead frame terminals and UL94V-0 flame-rated moulded plastic case. This MOSFET utilizes an unique structure combining the benefits of low on-state resistance...
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P Channel | 100V | 700mA | 1ohm | SOT-23 | Surface Mount | 10V | 4V | 625mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSP75N
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SC16889 |
SMD N Channel Power MOSFET Switch, Enhancement Mode, 60V, 1.1A, 0.5 Ohm, SOT 223 DIODES INC. • Short-circuit protection with auto restart • Overvoltage protection (active clamp) • Thermal shutdown with auto restart • Over-current protection • Input protection (ESD) • High continuous current rating • Load dump protection (actively protects load) •...
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N Channel | 60V | 1.1A | 0.55ohm | SOT-223 | Surface Mount | 10V | 2.1V | 1.5W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RE1C002UNTCL
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SC15965 |
Power MOSFET, N Channel, 20V, 200mA, 0.8 Ohm, SOT-416FL, SMD ROHM • Channel Type : N Channel • Drain Source Voltage Vds : 20V • Continuous Drain Current Id : 200mA • Drain Source On State Resistance : 0.8ohm • Transistor Case Style : SOT-416FL • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 2.5V • Gate Source Threshold Voltage Max : 1V • Power Dissipation : 150mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 20V | 200mA | 0.8ohm | SOT-416FL | Surface Mount | 2.5V | 1V | 150mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VN2222LL-G
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SC15835 |
Power MOSFET, N Channel, 60V, 230mA, 7.5 ohm, TO-92 MICROCHIP • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 230mA • Drain Source On State Resistance : 7.5ohm • Transistor Case Style : TO-92 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2.5V • Power Dissipation : 1W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 60V | 230mA | 7.5ohm | TO-92 | Through Hole | 10V | 2.5V | 1W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB4410ZPBF
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SC16934 |
Power MOSFET, N Channel, 100 V, 97 A, 0.008 ohm, TO-220AB, Through Hole INFINEON The IRFB4410ZPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptibl...
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N Channel | 100V | 97A | 0.008ohm | TO-220AB | Through Hole | 10V | 4V | 230W | 3Pins | 175°C | - | - |