Single MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2374DS-T1-GE3
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SC16793 |
Power MOSFET, N Channel, 20V, 5.9A, 0.025 Ohm, SOT-23, SMD VISHAY The SI2374DS-T1-GE3 from Vishay is a 40V SMD Power MOSFET, N Channel transistor in a SOT 23 case. Suitable for load switches and power management applications. • TrenchFET® power MOSFET • 100% tested
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N Channel | 20V | 5.9A | 0.025ohm | SOT-23 | Surface Mount | 4.5V | 1V | 1.7W | 3Pins | 150°C | TrenchFET | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF4905STRLPBF
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SC16867 |
Power MOSFET, P Channel, 55 V, 74 A, 0.02 ohm, TO-263 (D2PAK), Surface Mount INFINEON The IRF4905STRLPBF is a -55V single P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. It features combine to make this design an extremely efficient and reliabl...
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P Channel | 55V | 74A | 0.02ohm | TO-263 (D2PAK) | Surface Mount | 20V | 4V | 200W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMG2302UK-7
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SC15945 |
Power MOSFET, N Channel, 20V, 2.8A, 0.061 ohm, SOT-23, SMD DIODES INC. DMG2302UK-7 is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications ...
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N Channel | 20V | 2.8A | 0.09ohm | SOT-23 | Surface Mount | 4.5V | 600mV | 660mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTR5103NT1G
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SC15962 |
Power MOSFET, N Channel, 60V, 260mA, 1 Ohm, SOT-23, SMD ONSEMI • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 260mA • Drain Source On State Resistance : 1ohm • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2.6V • Power Dissipation : 300mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 60V | 260mA | 1ohm | SOT-23 | Surface Mount | 10V | 2.6V | 300mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MTP3055VL
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SC16970 |
Power MOSFET, N Channel, 60 V, 12 A, 0.1 ohm, TO-220AB, Through Hole ONSEMI The MTP3055VL is a N-channel Logic Level MOSFET designed specifically for low voltage, high speed switching applications. This MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is ...
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N Channel | 60V | 12A | 0.1ohm | TO-220AB | Through Hole | 5V | 1.6V | 48W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BST82,215
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SC16712 |
Power MOSFET, N Channel, 100 V, 190 mA, 10 ohm, SOT-23, Surface Mount NEXPERIA The BST82 is a N-channel enhancement mode Field-Effect Transistor in surface mount plastic package using Trench MOSFET technology. Suitable for high speed line driver and logic level translator. • Logic-level compatible • Very fast switching
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N Channel | 100V | 190mA | 10ohm | SOT-23 | Surface Mount | 5V | 2V | 830mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTD3055L104T4G
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SC16885 |
Power MOSFET, N Channel, 60 V, 12 A, 0.089 ohm, TO-252 (DPAK), Surface Mount ONSEMI The NTD3055L104T4G is a N-channel Power MOSFET designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. • Lower RDS (ON) • Lower VDS (ON) • Lower and tighter VSD • Lower diode r...
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N Channel | 60V | 12A | 0.089ohm | TO-252 (DPAK) | Surface Mount | 5V | 1.6V | 48W | 4Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SUM110P08-11L-E3
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SC16891 |
Power MOSFET, P Channel, 80 V, 110 A, 0.0093 ohm, TO-263 (D2PAK), Surface Mount VISHAY The SUM110P08-11L-E3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage
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P Channel | 80V | 110A | 0.0093ohm | TO-263 (D2PAK) | Surface Mount | 10V | 3V | 375W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMP4A16GTA
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SC16849 |
Power MOSFET, P Channel, 40 V, 6.4 A, 0.06 ohm, SOT-223, Surface Mount DIODES INC. The ZXMP4A16GTA is a -40V P-channel Enhancement Mode DMOSFET designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Low input capacitance • Low on-r...
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P Channel | 40V | 6.4A | 0.06ohm | SOT-223 | Surface Mount | 10V | 1V | 3.9W | 4Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD18543Q3AT
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SC16685 |
SMD Power MOSFET N Channel NexFET Transistor, 60V, 35A TEXAS INSTRUMENTS • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 35A • Drain Source On State Resistance : 0.0081ohm • Transistor Case Style : VSON • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • Power Dissipation : 66W • No. of Pins : 8Pins • Operating Temperature Max : 150°C • Product Range : NexFET
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N Channel | 60V | 35A | 0.0081ohm | VSON | Surface Mount | 10V | 2V | 66W | 8Pins | 150°C | NexFET | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMS6004FFTA
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SC16713 |
Power MOSFET, N Channel, 60 V, 2 A, 0.5 ohm, SOT-23F, Surface Mount DIODES INC. ZXMS6004FFTA is an INTELLIFET™ N-channel self protected enhancement mode MOSFET with logic level input. It integrates over-temperature, over-current, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6004FF is ideal as a gener...
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N Channel | 60V | 2A | 0.5ohm | SOT-23F | Surface Mount | 5V | 1V | 830mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTD20P06LT4G
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SC16990 |
Power MOSFET, P Channel, 60 V, 15.5 A, 0.143 ohm, TO-252 (DPAK), Surface Mount ONSEMI The NTD20P06LT4G is a -60V Single P-channel Power MOSFET designed for bridge circuits, power supplies and power motor controls as well as DC-DC conversion. The MOSFET withstands high energy in avalanche and commutation modes. • Low gate charge for fast swi...
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P Channel | 60V | 15.5A | 0.143ohm | TO-252 (DPAK) | Surface Mount | 5V | 1.5V | 65W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTR4501NT1G
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SC16717 |
Power MOSFET, N Channel, 20 V, 3.2 A, 0.08 ohm, SOT-23, Surface Mount ONSEMI The NTR4501NT1G is a 20V N-channel Power MOSFET with leading planar technology for low gate charge/fast switching. It is suitable with DC-DC conversion, load/power switch for portables and computing. • 2.5V Rated for low voltage gate drive • ±12V Gate to s...
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N Channel | 20V | 3.2A | 0.08ohm | SOT-23 | Surface Mount | 4.5V | 1.2V | 1.25W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSN20-7
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SC15958 |
Power MOSFET, N Channel, 50V, 500mA, 1.3 Ohm, SOT-23, SMD DIODES INC. BSN20-7 is a N-channel enhancement mode field MOSFET. This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applicatio...
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N Channel | 50V | 500mA | 1.8ohm | SOT-23 | Surface Mount | 10V | 1V | 600mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS806NEH6327XTSA1
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SC16876 |
Power MOSFET, N Channel, 20 V, 2.3 A, 0.041 ohm, SOT-23, Surface Mount INFINEON • N-channel Optima's™-2 small signal transistor • Enhancement mode • Ultra-logic level (1.8V rated) • ESD protected • Avalanche rated • Qualified according to AEC Q101
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N Channel | 20V | 2.3A | 0.041ohm | SOT-23 | Surface Mount | 2.5V | 550mV | 500mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB4227PBF
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SC17001 |
Power MOSFET, N Channel, 200 V, 65 A, 0.0197 ohm, TO-220AB, Through Hole INFINEON The IRFB4227PBF is a 200V single N-channel HEXFET® Power MOSFET PDP switch designed to sustain, energy recovery and pass switch applications for plasma display panels. By adapting the latest techniques it achieves low on-resistance per silicon area and EPU...
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N Channel | 200V | 65A | 0.0197ohm | TO-220AB | Through Hole | 10V | 5V | 330W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTD25P03LT4G
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SC16886 |
Power MOSFET, Logic Level, P Channel, 30 V, 25 A, 0.056 ohm, TO-252 (DPAK), Surface Mount ONSEMI The NTD25P03LT4G is a -30V P-channel Power MOSFET designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source to drain diode recovery time is comparable to a discrete fast reco...
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P Channel | 30V | 25A | 0.056ohm | TO-252 (DPAK) | Surface Mount | 5V | 1.6V | 75W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD19534Q5AT
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SC16686 |
SMD Power MOSFET N Channel NexFET Transistor, 100V, 50A TEXAS INSTRUMENTS The CSD19534Q5AT is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in primary side telecom applications. • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Halogen-free...
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N Channel | 100V | 50A | 0.0126ohm | VSON | Surface Mount | 10V | 2.8V | 63W | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLL014NTRPBF
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SC16905 |
Power MOSFET, HEXFET, N Channel, 55 V, 2 A, 0.14 ohm, SOT-223, Surface Mount INFINEON The IRLL014NTRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design,...
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N Channel | 55V | 2A | 0.14ohm | SOT-223 | Surface Mount | 10V | 2V | 1W | 4Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML6344TRPBF
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SC16730 |
Power MOSFET, N Channel, 30 V, 5 A, 0.022 ohm, SOT-23, Surface Mount INFINEON The IRLML6344TRPBF is a N-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount
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N Channel | 30V | 5A | 0.022ohm | SOT-23 | Surface Mount | 4.5V | 800mV | 1.3W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI4401DDY-T1-GE3
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SC16821 |
Power MOSFET, P Channel, 40 V, 16.1 A, 0.018 ohm, SOIC, Surface Mount VISHAY The SI4401DDY-T1-GE3 is a 40VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and POL applications. • 100% Rg tested • 100% UIS tested • Halogen-free • -55 to 150°C Operating temperature range
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P Channel | 40V | 16.1A | 0.018ohm | SOIC | Surface Mount | 4.5V | 1.2V | 6.3W | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB4020PBF
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SC16951 |
Power MOSFET, N Channel, 200 V, 18 A, 0.1 ohm, TO-220AB, Through Hole INFINEON The IRFB4020PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve ...
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N Channel | 200V | 18A | 0.1ohm | TO-220AB | Through Hole | 10V | 4.9V | 100W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG2301L-7
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SC15969 |
Power MOSFET, P Channel, 20V, 3A, 0.12 Ohm, SOT-23, SMD DIODES INC. DMG2301L-7 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications in...
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P Channel | 20V | 3A | 0.12ohm | SOT-23 | Surface Mount | 4.5V | 1.2V | 1.5W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG1013T-7
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SC16829 |
SMD P Channel Power MOSFET, 20V, 460mA, 0.5 Ohm, SOT-523 DIODES INC. This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Suitable for DC/DC converters, load switch and power ...
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P Channel | 20V | 460mA | 0.5ohm | SOT-523 | Surface Mount | 4.5V | 1V | 270mW | 3Pins | 150°C | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS84AKW,115
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SC16842 |
Power MOSFET, P Channel, 50 V, 150 mA, 4.5 ohm, SOT-323, Surface Mount NEXPERIA The BSS84AKW is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. The P-channel MOSFET is suitable for relay driver, high-speed line driver, high -side load switch and switching circuit applications. ...
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P Channel | 50V | 150mA | 4.5ohm | SOT-323 | Surface Mount | 10V | 1.6V | 260mW | 3Pins | 150°C | - | - |