Single MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLB8314PBF
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SC16927 |
Power MOSFET, N Channel, 30 V, 171 A, 0.0024 ohm, TO-220AB, Through Hole INFINEON IRLB8314PBF is a HEXFET® power MOSFET. Application includes optimized for UPS/inverter applications, low voltage power tools. • Best in Class performance for UPS/Inverter applications • Ultra-low gate impedance, fully characterized avalanche voltage and cu...
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N Channel | 30V | 171A | 0.0024ohm | TO-220AB | Through Hole | 10V | 2.2V | 125W | 3Pins | 175°C | HEXFET Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDV301N
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SC16698 |
SMD MOSFET N Channel Digital FET Power Transistor, SOT-23, 25V, 220mA ONSEMI The FDV301N is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and maintain low gate charge...
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N Channel | 25V | 220mA | 4ohm | SOT-23 | Surface Mount | 4.5V | 1.06V | 350mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFB4127PBF
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SC16988 |
Power MOSFET, N Channel, 200 V, 76 A, 0.017 ohm, TO-220AB, Through Hole INFINEON Single N-channel HEXFET® power MOSFET suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching and hard switched and high frequency circuits applications. • Improved gate, avalanche and dynami...
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N Channel | 200V | 76A | 0.017ohm | TO-220AB | Through Hole | 20V | 5V | 375W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMG1012UW-7
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SC15960 |
Power MOSFET, N Channel, 20V, 1A, 0.3 Ohm, SOT-323, SMD DIODES INC. DMG1012UW-7 is a N-channel enhancement mode MOSFET. • Low on-resistance, low gate threshold voltage • Low input capacitance, fast switching speed • Low input/output leakage, ESD protected up to 2kV • Drain-source voltage is 20V at TA = +25°C • Gate-source ...
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N Channel | 20V | 1A | 0.45ohm | SOT-323 | Surface Mount | 4.5V | 1V | 290mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ZXM61P03F
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SC16786 |
Power MOSFET, P Channel, 30 V, 1.1 A, 0.35 ohm, SOT-23, Surface Mount DIODES INC. The ZXM61P03F is a P-channel enhancement mode MOSFET from Zetex utilizes an unique structure combining the benefits of low on-state resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications....
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P Channel | 30V | 1.1A | 0.35ohm | SOT-23 | Surface Mount | 10V | 1V | 625mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFR5505TRPBF
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SC16813 |
Power MOSFET, P Channel, 55 V, 18 A, 0.11 ohm, TO-252AA, Surface Mount INFINEON The IRFR5505TRPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design,...
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P Channel | 55V | 18A | 0.11ohm | TO-252AA | Surface Mount | 10V | 4V | 57W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS6679AZ
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SC16900 |
Power MOSFET, P Channel, 30 V, 13 A, 0.0077 ohm, SOIC, Surface Mount ONSEMI The FDS6679AZ is a P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. This device is well suited for load switching applications common in portable battery packs. • High perfo...
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P Channel | 30V | 13A | 0.0077ohm | SOIC | Surface Mount | 10V | 1.9V | 2.5W | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF5210STRLPBF
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SC16815 |
Power MOSFET, P Channel, 100 V, 38 A, 0.06 ohm, TO-263 (D2PAK), Surface Mount INFINEON The IRF5210STRLPBF is a HEXFET® single P-channel Power MOSFET offers of this design is a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient ...
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P Channel | 100V | 38A | 0.06ohm | TO-263 (D2PAK) | Surface Mount | 10V | 4V | 3.8W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDP2532
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SC16972 |
N Channel Power MOSFET, PowerTrench, 150V, 79A, 0.014 Ohm, TO-220AB ONSEMI • Low miller charge • Low Qrr body diode • UIS Capability (single pulse and repetitive pulse)
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N Channel | 150V | 79A | 0.014ohm | TO-220AB | Through Hole | 10V | 4V | 310W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF730PBF
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SC16902 |
N Channel Power MOSFET, 400V, 5.5A, 1 Ohm, TO-220AB VISHAY • Dynamic dV/dt rating • Repetitive avalanche rated • 150°C Operating temperature • Easy to parallel • Simple drive requirement
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N Channel | 400V | 5.5A | 1ohm | TO-220AB | Through Hole | 10V | 4V | 74W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9510PBF
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SC16944 |
Power MOSFET, P Channel, 100 V, 3 A, 1.2 ohm, TO-220AB, Through Hole VISHAY The IRF9510PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximate...
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P Channel | 100V | 3A | 1.2ohm | TO-220AB | Through Hole | 10V | 4V | 20W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX3008NBK,215
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SC16715 |
Power MOSFET, Trench, N Channel, 30 V, 400 mA, 1 ohm, SOT-23, Surface Mount NEXPERIA The NX3008NBK from NXP is a surface mount, 30V N channel enhancement mode field effect transistor in SOT-23 (TO-236AB) package using TrenchMOS technology. This transistor features very high speed switching, low threshold voltage and ESD protection up to 2K...
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N Channel | 30V | 400mA | 1ohm | SOT-23 | Surface Mount | 4.5V | 900mV | 350mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP9140NPBF
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SC17021 |
Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-247AC, Through Hole INFINEON The IRFP9140NPBF is a -100V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized ...
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P Channel | 100V | 23A | 0.117ohm | TO-247AC | Through Hole | 10V | 4V | 120W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138W
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SC16001 |
Power MOSFET, N Channel, 50V, 210mA, 1.17 Ohm, SOT-323, SMD ONSEMI The BSS138W is a N-channel enhancement-mode FET designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It is particularly suited for low voltage, low current applications such as power MOSFET gate drivers an...
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N Channel | 50V | 210mA | 1.17ohm | SOT-323 | Surface Mount | 10V | 1.3V | 340mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMN6140L-13
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SC15973 |
Power MOSFET, N Channel, 60V, 1.6A, 0.092 Ohm, SOT-23, SMD DIODES INC. DMN6140L-13 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical...
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N Channel | 60V | 1.6A | 0.092ohm | SOT-23 | Surface Mount | 10V | 3V | 700mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP1045U
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SC16904 |
Power MOSFET, Enhancement Mode, P Channel, 12 V, 5.2 A, 0.026 ohm, SOT-23, Surface Mount DIODES INC. The DMP1045U from Diode Inc is a surface mount, P channel enhancement mode MOSFET in SOT-23 package. This device features low on resistance, low input capacitance, fast switching speed and low input/output leakage thus it is ideal for high efficiency power...
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P Channel | 12V | 5.2A | 0.026ohm | SOT-23 | Surface Mount | 4.5V | 550mV | 800mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS84LT1G
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SC16708 |
Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-23, Surface Mount ONSEMI The BSS84LT1G is a P-channel Power MOSFET qualified to AEC Q101 and PPAP capable. It is suitable for DC-DC converters and load switching applications.
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P Channel | 50V | 130mA | 10ohm | SOT-23 | Surface Mount | 5V | 2V | 225mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX3008NBKW,115
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SC16748 |
Power MOSFET, N Channel, 30 V, 350 mA, 1 ohm, SOT-323, Surface Mount NEXPERIA The NX3008NBKW is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, low-side load-switch, high-speed line driver and switching circuit applications. • Very fast...
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N Channel | 30V | 350mA | 1ohm | SOT-323 | Surface Mount | 4.5V | 900mV | 260mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB3607PBF
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SC16895 |
Power MOSFET, N Channel, 75 V, 80 A, 0.00734 ohm, TO-220AB, Through Hole INFINEON The IRFB3607PBF is a 75V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible ...
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N Channel | 75V | 80A | 0.00734ohm | TO-220AB | Through Hole | 10V | 4V | 140W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2365EDS-T1-GE3
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SC16859 |
SMD P Channel Power MOSFET, 20V, 5.9A, 0.0265 Ohm, SOT-23 VISHAY • Suitable for power management applications for portable and consumer i.e load switches and DC/DC converters • TrenchFET® Power MOSFET • 100% Rg Tested • Built-in ESD Protection - Typical ESD Performance 3000V
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P Channel | 20V | 5.9A | 0.0265ohm | SOT-23 | Surface Mount | 4.5V | 1V | 1.7W | 3Pins | 150°C | TrenchFET | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138-7-F
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SC15996 |
Power MOSFET, N Channel, 50V, 200mA, 1.4 Ohm, SOT-23, SMD DIODES INC. The BSS138-7-F is a 50V N-channel enhancement mode MOSFET with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. The case is made of molded plastic (UL94V-0). The MOSFET features low gate threshold voltage, fast switc...
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N Channel | 50V | 200mA | 3.5ohm | SOT-23 | Surface Mount | 10V | 1.2V | 300mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2336DS-T1-GE3
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SC16781 |
Power MOSFET, N Channel, 30 V, 5.2 A, 0.034 ohm, SOT-23, Surface Mount VISHAY • N-channel 30V (D-S) TrenchFET® power MOSFET • 100% Rg tested • Used in DC/DC converters, boost converters
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N Channel | 30V | 5.2A | 0.034ohm | SOT-23 | Surface Mount | 4.5V | 400mV | 1.8W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138W-7-F
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SC16004 |
Power MOSFET, N Channel, 50V, 200mA, 3.5 Ohm, SOT-323, SMD DIODES INC. The BSS138W-7-F is a N-channel enhancement-mode DMOSFET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. • Low ON-resistance • Low gate threshold voltage • Low input capacitance • F...
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N Channel | 50V | 200mA | 3.5ohm | SOT-323 | Surface Mount | 10V | 1.2V | 200mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002PW,115
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SC15988 |
Power MOSFET, N Channel, 60V, 310mA, 1 Ohm, SOT-323, SMD NEXPERIA The 2N7002PW is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic Level Compatible • Very Fast Switching • ESD Protection Upto 1.5kV • AEC-Q101 Qualified
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N Channel | 60V | 310mA | 1ohm | SOT-323 | Surface Mount | 10V | 1.75V | 200mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN306P
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SC16722 |
Power MOSFET, P Channel, 12 V, 2.6 A, 0.04 ohm, SuperSOT, Surface Mount ONSEMI The FDN306P is a P-channel 1.8V specified MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management applications. • Fast switching • High performance trench technology for extremely low RDS
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P Channel | 12V | 2.6A | 0.04ohm | SuperSOT | Surface Mount | 4.5V | 600mV | 500mW | 3Pins | 150°C | - | - |