Single MOSFET Transistors

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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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IRFB3607PBF
IRFB3607PBF - Power MOSFET, N Channel, 75 V, 80 A, 0.00734 ohm, TO-220AB, Through Hole

SC16895

Power MOSFET, N Channel, 75 V, 80 A, 0.00734 ohm, TO-220AB, Through Hole

INFINEON

The IRFB3607PBF is a 75V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible ...

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N Channel 75V 80A 0.00734ohm TO-220AB Through Hole 10V 4V 140W 3Pins 175°C - -
BSS138-7-F
BSS138-7-F - Power MOSFET, N Channel, 50V, 200mA, 1.4 Ohm, SOT-23, SMD

SC15996

Power MOSFET, N Channel, 50V, 200mA, 1.4 Ohm, SOT-23, SMD

DIODES INC.

The BSS138-7-F is a 50V N-channel enhancement mode MOSFET with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. The case is made of molded plastic (UL94V-0). The MOSFET features low gate threshold voltage, fast switc...

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N Channel 50V 200mA 3.5ohm SOT-23 Surface Mount 10V 1.2V 300mW 3Pins 150°C - -
SI2365EDS-T1-GE3
SI2365EDS-T1-GE3 - SMD P Channel Power MOSFET, 20V, 5.9A, 0.0265 Ohm, SOT-23

SC16859

SMD P Channel Power MOSFET, 20V, 5.9A, 0.0265 Ohm, SOT-23

VISHAY

• Suitable for power management applications for portable and consumer i.e load switches and DC/DC converters • TrenchFET® Power MOSFET • 100% Rg Tested • Built-in ESD Protection - Typical ESD Performance 3000V

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P Channel 20V 5.9A 0.0265ohm SOT-23 Surface Mount 4.5V 1V 1.7W 3Pins 150°C TrenchFET -
2N7002PW,115
2N7002PW,115 - Power MOSFET, N Channel, 60V, 310mA, 1 Ohm, SOT-323, SMD

SC15988

Power MOSFET, N Channel, 60V, 310mA, 1 Ohm, SOT-323, SMD

NEXPERIA

The 2N7002PW is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic Level Compatible • Very Fast Switching • ESD Protection Upto 1.5kV • AEC-Q101 Qualified

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N Channel 60V 310mA 1ohm SOT-323 Surface Mount 10V 1.75V 200mW 3Pins 150°C - -
BUK9875-100A/CUX
BUK9875-100A/CUX - Power MOSFET, N Channel, 100V, 7A, 0.062 ohm, SOT-223, SMD

SC15953

Power MOSFET, N Channel, 100V, 7A, 0.062 ohm, SOT-223, SMD

NEXPERIA

• Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 7A • Drain Source On State Resistance : 0.062ohm • Transistor Case Style : SOT-223 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 1.5V • Power Dissipation : 8W • No. of Pins : 4Pins • Operating Temperature Max : 150°C • Qualification : AEC-Q101

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N Channel 100V 7A 0.062ohm SOT-223 Surface Mount 10V 1.5V 8W 4Pins 150°C - AEC-Q101
IRLML2244TRPBF
IRLML2244TRPBF - Power MOSFET, P Channel, 20 V, 4.3 A, 0.042 ohm, SOT-23, Surface Mount

SC16759

Power MOSFET, P Channel, 20 V, 4.3 A, 0.042 ohm, SOT-23, Surface Mount

INFINEON

The IRLML2244TRPBF is a P-channel HEXFET® Power MOSFET compatible with existing surface mount techniques. This transistor features lower switching losses, increased reliability and environmentally friendly. • Multi-vendor compatibility • Industry standard ...

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P Channel 20V 4.3A 0.042ohm SOT-23 Surface Mount 4.5V 1.1V 1.3W 3Pins 150°C - -
BSS84AK,215
BSS84AK,215 - Power MOSFET, P Channel, 50 V, 180 mA, 4.5 ohm, SOT-23, Surface Mount

SC16767

Power MOSFET, P Channel, 50 V, 180 mA, 4.5 ohm, SOT-23, Surface Mount

NEXPERIA

The BSS84AK is a P-channel enhancement mode Field-Effect Transistor in surface mount plastic package using Trench MOSFET technology. Logic-level compatible and very fast switching. Suitable for relay driver and high-speed line driver. • AEC-Q101 Qualified ...

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P Channel 50V 180mA 4.5ohm SOT-23 Surface Mount 10V 1.6V 350mW 3Pins 150°C - -
FDN306P
FDN306P - Power MOSFET, P Channel, 12 V, 2.6 A, 0.04 ohm, SuperSOT, Surface Mount

SC16722

Power MOSFET, P Channel, 12 V, 2.6 A, 0.04 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN306P is a P-channel 1.8V specified MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management applications. • Fast switching • High performance trench technology for extremely low RDS

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P Channel 12V 2.6A 0.04ohm SuperSOT Surface Mount 4.5V 600mV 500mW 3Pins 150°C - -
BSS138BKW,115
BSS138BKW,115 - Power MOSFET, N Channel, 60 V, 320 mA, 1 ohm, SOT-323, Surface Mount

SC16779

Power MOSFET, N Channel, 60 V, 320 mA, 1 ohm, SOT-323, Surface Mount

NEXPERIA

The BSS138BKW is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. The N-channel Trench MOSFET suitable for relay driver, high-speed line driver, low-side load switch and switching circuit application...

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N Channel 60V 320mA 1ohm SOT-323 Surface Mount 10V 1.1V 260mW 3Pins 150°C - -
STP55NF06
STP55NF06 - Power MOSFET, N Channel, 60V, 50A, 0.015 ohm, TO-220

SC15840

Power MOSFET, N Channel, 60V, 50A, 0.015 ohm, TO-220

STMICROELECTRONICS

The STP55NF06 is a 60V N-channel Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC conv...

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N Channel 60V 50A 0.015ohm TO-220 Through Hole 10V 3V 30W 3Pins 175°C - -
NDS331N
NDS331N - SMD N Channel, Logic Level Enhancement Mode Power MOSFET Transistor, SuperSOT, 20V, 1.3A

SC16701

SMD N Channel, Logic Level Enhancement Mode Power MOSFET Transistor, SuperSOT, 20V, 1.3A

ONSEMI

The NDS331N is a N-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance. Suited for low voltage applications in PC...

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N Channel 20V 1.3A 0.11ohm SuperSOT Surface Mount 4.5V 700mV 500mW 3Pins 150°C - -
IRLB8721PBF
IRLB8721PBF - Power MOSFET, N Channel, 30 V, 31 A, 0.0065 ohm, TO-220AB, Through Hole

SC16954

Power MOSFET, N Channel, 30 V, 31 A, 0.0065 ohm, TO-220AB, Through Hole

INFINEON

The IRLB8721PBF is a 30V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high frequency synchronous buck, converters for computer processor ...

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N Channel 30V 31A 0.0065ohm TO-220AB Through Hole 10V 1.8V 65W 3Pins 175°C HEXFET Series -
FQPF7N65C
FQPF7N65C - Power MOSFET, N Channel, 650 V, 7 A, 1.4 ohm, TO-220F, Through Hole

SC16961

Power MOSFET, N Channel, 650 V, 7 A, 1.4 ohm, TO-220F, Through Hole

ONSEMI

The FQPF7N65C is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and ...

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N Channel 650V 7A 1.4ohm TO-220F Through Hole 10V 4V 52W 3Pins 150°C QFET Series -
SUD50P06-15-GE3
SUD50P06-15-GE3 - Power MOSFET, P Channel, 60 V, 50 A, 0.012 ohm, TO-252 (DPAK), Surface Mount

SC16924

Power MOSFET, P Channel, 60 V, 50 A, 0.012 ohm, TO-252 (DPAK), Surface Mount

VISHAY

The SUD50P06-15-GE3 is a 60V P-channel TrenchFET® Power MOSFET with power dissipation at 2.5W. This power MOSFET is designed for load switch. • ±20V Gate-source voltage

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P Channel 60V 50A 0.012ohm TO-252 (DPAK) Surface Mount 10V 3V 2.5W 3Pins 150°C - -
IRFZ44ZPBF
IRFZ44ZPBF - Power MOSFET, Automotive, N Channel, 55 V, 51 A, 0.0139 ohm, TO-220AB, Through Hole

SC16925

Power MOSFET, Automotive, N Channel, 55 V, 51 A, 0.0139 ohm, TO-220AB, Through Hole

INFINEON

The IRFZ44ZPBF is a 55V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching s...

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N Channel 55V 51A 0.0139ohm TO-220AB Through Hole 10V 4V 80W 3Pins 175°C - -
2N7002BKVL
2N7002BKVL - Power MOSFET, N Channel, 60 V, 350 mA, 1 ohm, TO-236AB, Surface Mount

SC16816

Power MOSFET, N Channel, 60 V, 350 mA, 1 ohm, TO-236AB, Surface Mount

NEXPERIA

• Suitable for Relay driver, High-speed line driver, Low-side loadswitch and switching circuits applications • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD protection up to 2kV • AEC-Q101 qualified

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N Channel 60V 350mA 1ohm TO-236AB Surface Mount 10V 1.6V 370mW 3Pins 150°C - AEC-Q101
SI4435DY.
SI4435DY. - Power MOSFET, P Channel, 30 V, 8.8 A, 0.015 ohm, SOIC, Surface Mount

SC16856

Power MOSFET, P Channel, 30 V, 8.8 A, 0.015 ohm, SOIC, Surface Mount

ONSEMI

The SI4435DY is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches comb...

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P Channel 30V 8.8A 0.015ohm SOIC Surface Mount 10V 1.7V 2.5W 8Pins 175°C - -
FDC5614P
FDC5614P - Power MOSFET, P Channel, 60 V, 3 A, 0.105 ohm, SuperSOT, Surface Mount

SC16723

Power MOSFET, P Channel, 60 V, 3 A, 0.105 ohm, SuperSOT, Surface Mount

ONSEMI

The FDC5614P is a -60V P-channel logic level PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power s...

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P Channel 60V 3A 0.105ohm SuperSOT Surface Mount 10V 1.6V 1.6W 6Pins 150°C - -
FDC604P
FDC604P - Power MOSFET, P Channel, 20 V, 5.5 A, 0.033 ohm, SuperSOT, Surface Mount

SC16981

Power MOSFET, P Channel, 20 V, 5.5 A, 0.033 ohm, SuperSOT, Surface Mount

ONSEMI

The FDC604P is a 1.8V specified P-channel MOSFET uses low voltage PowerTrench® process. It has been optimized for battery power management, load switch and battery protection applications. • Fast switching speed • High performance Trench technology for ext...

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P Channel 20V 5.5A 0.033ohm SuperSOT Surface Mount 4.5V 700mV 1.6W 6Pins 150°C - -
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1 - Power MOSFET, N Channel, 150V, 87A, 0.0079 Ohm, TDSON, SMD

SC15975

Power MOSFET, N Channel, 150V, 87A, 0.0079 Ohm, TDSON, SMD

INFINEON

• 150V Optima's ™ 5 power transistor • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • Very low reverse recovery charge(Qtr.) • Qualified according to JEDEC for target applications • Ideal for hig...

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N Channel 150V 87A 0.0079ohm TDSON Surface Mount 10V 3.8V 139W 8Pins 150°C OptiMOS 5 -
PMF170XP,115
PMF170XP,115 - Power MOSFET, P Channel, 20 V, 1 A, 0.175 ohm, SOT-323, Surface Mount

SC16740

Power MOSFET, P Channel, 20 V, 1 A, 0.175 ohm, SOT-323, Surface Mount

NEXPERIA

The PMF170XP is a P-channel enhancement mode Field-Effect Transistor with low drain-source on-state resistance and fast switching. • Trench MOSFET technology • Very fast switching

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P Channel 20V 1A 0.175ohm SOT-323 Surface Mount 4.5V 900mV 290mW 3Pins 150°C - -
NTA4153NT1G
NTA4153NT1G - Power MOSFET, N Channel, 20 V, 915 mA, 0.127 ohm, SC-75, Surface Mount

SC16850

Power MOSFET, N Channel, 20 V, 915 mA, 0.127 ohm, SC-75, Surface Mount

ONSEMI

The NTA4153NT1G is a N-channel Small Signal MOSFET with ESD protected gate. It is suitable for load/power switches, power supply converter circuits, battery management, portables like cell phones, PDAs, digital cameras and pagers. • Low RDS (ON) improving ...

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N Channel 20V 915mA 0.127ohm SC-75 Surface Mount 4.5V 760mV 300mW 3Pins 150°C - -
DN2540N5-G
DN2540N5-G - Power MOSFET, N Channel, 400 V, 500 mA, 17 ohm, TO-220AB, Through Hole

SC16996

Power MOSFET, N Channel, 400 V, 500 mA, 17 ohm, TO-220AB, Through Hole

MICROCHIP

The DN2540N5-G is a 400V N-channel Depletion Mode (normally-on) Transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar ...

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N Channel 400V 500mA 17ohm TO-220AB Through Hole 0V - 15W 3Pins 150°C - -
DMN2004K-7
DMN2004K-7 - Power MOSFET, N Channel, 20 V, 630 mA, 0.55 ohm, SOT-23, Surface Mount

SC16984

Power MOSFET, N Channel, 20 V, 630 mA, 0.55 ohm, SOT-23, Surface Mount

DIODES INC.

The DMN2004K-7 is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. It has been designed to minimize the ON-state resistance RDS (ON) and yet main...

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N Channel 20V 630mA 0.55ohm SOT-23 Surface Mount 4.5V 1.6V 350mW 3Pins 150°C - -
BSS84-7-F
BSS84-7-F - Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-23, Surface Mount

SC16752

Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-23, Surface Mount

DIODES INC.

The BSS84-7-F is a P-channel enhancement-mode MOSFET with solderable matte tin plated terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance, making it ideal for hi...

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P Channel 50V 130mA 10ohm SOT-23 Surface Mount 5V 800mV 300mW 3Pins 150°C - -