Single MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB3607PBF
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SC16895 |
Power MOSFET, N Channel, 75 V, 80 A, 0.00734 ohm, TO-220AB, Through Hole INFINEON The IRFB3607PBF is a 75V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible ...
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N Channel | 75V | 80A | 0.00734ohm | TO-220AB | Through Hole | 10V | 4V | 140W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS138-7-F
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SC15996 |
Power MOSFET, N Channel, 50V, 200mA, 1.4 Ohm, SOT-23, SMD DIODES INC. The BSS138-7-F is a 50V N-channel enhancement mode MOSFET with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. The case is made of molded plastic (UL94V-0). The MOSFET features low gate threshold voltage, fast switc...
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N Channel | 50V | 200mA | 3.5ohm | SOT-23 | Surface Mount | 10V | 1.2V | 300mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2365EDS-T1-GE3
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SC16859 |
SMD P Channel Power MOSFET, 20V, 5.9A, 0.0265 Ohm, SOT-23 VISHAY • Suitable for power management applications for portable and consumer i.e load switches and DC/DC converters • TrenchFET® Power MOSFET • 100% Rg Tested • Built-in ESD Protection - Typical ESD Performance 3000V
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P Channel | 20V | 5.9A | 0.0265ohm | SOT-23 | Surface Mount | 4.5V | 1V | 1.7W | 3Pins | 150°C | TrenchFET | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N7002PW,115
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SC15988 |
Power MOSFET, N Channel, 60V, 310mA, 1 Ohm, SOT-323, SMD NEXPERIA The 2N7002PW is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic Level Compatible • Very Fast Switching • ESD Protection Upto 1.5kV • AEC-Q101 Qualified
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N Channel | 60V | 310mA | 1ohm | SOT-323 | Surface Mount | 10V | 1.75V | 200mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BUK9875-100A/CUX
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SC15953 |
Power MOSFET, N Channel, 100V, 7A, 0.062 ohm, SOT-223, SMD NEXPERIA • Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 7A • Drain Source On State Resistance : 0.062ohm • Transistor Case Style : SOT-223 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 1.5V • Power Dissipation : 8W • No. of Pins : 4Pins • Operating Temperature Max : 150°C • Qualification : AEC-Q101
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N Channel | 100V | 7A | 0.062ohm | SOT-223 | Surface Mount | 10V | 1.5V | 8W | 4Pins | 150°C | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML2244TRPBF
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SC16759 |
Power MOSFET, P Channel, 20 V, 4.3 A, 0.042 ohm, SOT-23, Surface Mount INFINEON The IRLML2244TRPBF is a P-channel HEXFET® Power MOSFET compatible with existing surface mount techniques. This transistor features lower switching losses, increased reliability and environmentally friendly. • Multi-vendor compatibility • Industry standard ...
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P Channel | 20V | 4.3A | 0.042ohm | SOT-23 | Surface Mount | 4.5V | 1.1V | 1.3W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS84AK,215
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SC16767 |
Power MOSFET, P Channel, 50 V, 180 mA, 4.5 ohm, SOT-23, Surface Mount NEXPERIA The BSS84AK is a P-channel enhancement mode Field-Effect Transistor in surface mount plastic package using Trench MOSFET technology. Logic-level compatible and very fast switching. Suitable for relay driver and high-speed line driver. • AEC-Q101 Qualified ...
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P Channel | 50V | 180mA | 4.5ohm | SOT-23 | Surface Mount | 10V | 1.6V | 350mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN306P
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SC16722 |
Power MOSFET, P Channel, 12 V, 2.6 A, 0.04 ohm, SuperSOT, Surface Mount ONSEMI The FDN306P is a P-channel 1.8V specified MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management applications. • Fast switching • High performance trench technology for extremely low RDS
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P Channel | 12V | 2.6A | 0.04ohm | SuperSOT | Surface Mount | 4.5V | 600mV | 500mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138BKW,115
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SC16779 |
Power MOSFET, N Channel, 60 V, 320 mA, 1 ohm, SOT-323, Surface Mount NEXPERIA The BSS138BKW is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. The N-channel Trench MOSFET suitable for relay driver, high-speed line driver, low-side load switch and switching circuit application...
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N Channel | 60V | 320mA | 1ohm | SOT-323 | Surface Mount | 10V | 1.1V | 260mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP55NF06
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SC15840 |
Power MOSFET, N Channel, 60V, 50A, 0.015 ohm, TO-220 STMICROELECTRONICS The STP55NF06 is a 60V N-channel Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC conv...
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N Channel | 60V | 50A | 0.015ohm | TO-220 | Through Hole | 10V | 3V | 30W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDS331N
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SC16701 |
SMD N Channel, Logic Level Enhancement Mode Power MOSFET Transistor, SuperSOT, 20V, 1.3A ONSEMI The NDS331N is a N-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance. Suited for low voltage applications in PC...
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N Channel | 20V | 1.3A | 0.11ohm | SuperSOT | Surface Mount | 4.5V | 700mV | 500mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLB8721PBF
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SC16954 |
Power MOSFET, N Channel, 30 V, 31 A, 0.0065 ohm, TO-220AB, Through Hole INFINEON The IRLB8721PBF is a 30V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high frequency synchronous buck, converters for computer processor ...
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N Channel | 30V | 31A | 0.0065ohm | TO-220AB | Through Hole | 10V | 1.8V | 65W | 3Pins | 175°C | HEXFET Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQPF7N65C
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SC16961 |
Power MOSFET, N Channel, 650 V, 7 A, 1.4 ohm, TO-220F, Through Hole ONSEMI The FQPF7N65C is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and ...
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N Channel | 650V | 7A | 1.4ohm | TO-220F | Through Hole | 10V | 4V | 52W | 3Pins | 150°C | QFET Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SUD50P06-15-GE3
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SC16924 |
Power MOSFET, P Channel, 60 V, 50 A, 0.012 ohm, TO-252 (DPAK), Surface Mount VISHAY The SUD50P06-15-GE3 is a 60V P-channel TrenchFET® Power MOSFET with power dissipation at 2.5W. This power MOSFET is designed for load switch. • ±20V Gate-source voltage
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P Channel | 60V | 50A | 0.012ohm | TO-252 (DPAK) | Surface Mount | 10V | 3V | 2.5W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFZ44ZPBF
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SC16925 |
Power MOSFET, Automotive, N Channel, 55 V, 51 A, 0.0139 ohm, TO-220AB, Through Hole INFINEON The IRFZ44ZPBF is a 55V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching s...
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N Channel | 55V | 51A | 0.0139ohm | TO-220AB | Through Hole | 10V | 4V | 80W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002BKVL
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SC16816 |
Power MOSFET, N Channel, 60 V, 350 mA, 1 ohm, TO-236AB, Surface Mount NEXPERIA • Suitable for Relay driver, High-speed line driver, Low-side loadswitch and switching circuits applications • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD protection up to 2kV • AEC-Q101 qualified
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N Channel | 60V | 350mA | 1ohm | TO-236AB | Surface Mount | 10V | 1.6V | 370mW | 3Pins | 150°C | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI4435DY.
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SC16856 |
Power MOSFET, P Channel, 30 V, 8.8 A, 0.015 ohm, SOIC, Surface Mount ONSEMI The SI4435DY is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches comb...
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P Channel | 30V | 8.8A | 0.015ohm | SOIC | Surface Mount | 10V | 1.7V | 2.5W | 8Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDC5614P
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SC16723 |
Power MOSFET, P Channel, 60 V, 3 A, 0.105 ohm, SuperSOT, Surface Mount ONSEMI The FDC5614P is a -60V P-channel logic level PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power s...
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P Channel | 60V | 3A | 0.105ohm | SuperSOT | Surface Mount | 10V | 1.6V | 1.6W | 6Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDC604P
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SC16981 |
Power MOSFET, P Channel, 20 V, 5.5 A, 0.033 ohm, SuperSOT, Surface Mount ONSEMI The FDC604P is a 1.8V specified P-channel MOSFET uses low voltage PowerTrench® process. It has been optimized for battery power management, load switch and battery protection applications. • Fast switching speed • High performance Trench technology for ext...
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P Channel | 20V | 5.5A | 0.033ohm | SuperSOT | Surface Mount | 4.5V | 700mV | 1.6W | 6Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC093N15NS5ATMA1
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SC15975 |
Power MOSFET, N Channel, 150V, 87A, 0.0079 Ohm, TDSON, SMD INFINEON • 150V Optima's ™ 5 power transistor • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • Very low reverse recovery charge(Qtr.) • Qualified according to JEDEC for target applications • Ideal for hig...
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N Channel | 150V | 87A | 0.0079ohm | TDSON | Surface Mount | 10V | 3.8V | 139W | 8Pins | 150°C | OptiMOS 5 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMF170XP,115
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SC16740 |
Power MOSFET, P Channel, 20 V, 1 A, 0.175 ohm, SOT-323, Surface Mount NEXPERIA The PMF170XP is a P-channel enhancement mode Field-Effect Transistor with low drain-source on-state resistance and fast switching. • Trench MOSFET technology • Very fast switching
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P Channel | 20V | 1A | 0.175ohm | SOT-323 | Surface Mount | 4.5V | 900mV | 290mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTA4153NT1G
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SC16850 |
Power MOSFET, N Channel, 20 V, 915 mA, 0.127 ohm, SC-75, Surface Mount ONSEMI The NTA4153NT1G is a N-channel Small Signal MOSFET with ESD protected gate. It is suitable for load/power switches, power supply converter circuits, battery management, portables like cell phones, PDAs, digital cameras and pagers. • Low RDS (ON) improving ...
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N Channel | 20V | 915mA | 0.127ohm | SC-75 | Surface Mount | 4.5V | 760mV | 300mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DN2540N5-G
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SC16996 |
Power MOSFET, N Channel, 400 V, 500 mA, 17 ohm, TO-220AB, Through Hole MICROCHIP The DN2540N5-G is a 400V N-channel Depletion Mode (normally-on) Transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar ...
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N Channel | 400V | 500mA | 17ohm | TO-220AB | Through Hole | 0V | - | 15W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMN2004K-7
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SC16984 |
Power MOSFET, N Channel, 20 V, 630 mA, 0.55 ohm, SOT-23, Surface Mount DIODES INC. The DMN2004K-7 is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. It has been designed to minimize the ON-state resistance RDS (ON) and yet main...
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N Channel | 20V | 630mA | 0.55ohm | SOT-23 | Surface Mount | 4.5V | 1.6V | 350mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS84-7-F
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SC16752 |
Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-23, Surface Mount DIODES INC. The BSS84-7-F is a P-channel enhancement-mode MOSFET with solderable matte tin plated terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance, making it ideal for hi...
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P Channel | 50V | 130mA | 10ohm | SOT-23 | Surface Mount | 5V | 800mV | 300mW | 3Pins | 150°C | - | - |