Single MOSFET Transistors

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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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2N7002K-T1-GE3
2N7002K-T1-GE3 - Power MOSFET, N Channel, 60 V, 190 mA, 2 ohm, SOT-23, Surface Mount

SC16724

Power MOSFET, N Channel, 60 V, 190 mA, 2 ohm, SOT-23, Surface Mount

VISHAY

The 2N7002K-T1-GE3 is a TrenchFET® N-channel enhancement-mode Power MOSFET offers low Input and output leakage. • 2Ω Low ON-resistance • 2V Low threshold • 25pF Low input capacitance • 25ns Fast switching speed • 2000V ESD Protection • Halogen-free • Low o...

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N Channel 60V 190mA 2ohm SOT-23 Surface Mount 10V 1V 350mW 3Pins 150°C - -
FDPF18N50
FDPF18N50 - Power MOSFET, N Channel, 500 V, 18 A, 0.22 ohm, TO-220F, Through Hole

SC16953

Power MOSFET, N Channel, 500 V, 18 A, 0.22 ohm, TO-220F, Through Hole

ONSEMI

The FDPF18N50 is an UniFET™ high voltage MOSFET produced based on planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitab...

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N Channel 500V 18A 0.22ohm TO-220F Through Hole 10V 5V 38.5W 3Pins 150°C - -
IRLML0030TRPBF
IRLML0030TRPBF - Power MOSFET, N Channel, 30 V, 5.3 A, 0.022 ohm, SOT-23, Surface Mount

SC16720

Power MOSFET, N Channel, 30 V, 5.3 A, 0.022 ohm, SOT-23, Surface Mount

INFINEON

The IRLML0030TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Multi-vendor compatibility • Environme...

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N Channel 30V 5.3A 0.022ohm SOT-23 Surface Mount 10V 1.7V 1.3W 3Pins 150°C - -
PMV37ENEAR
PMV37ENEAR - SMD N Channel Power MOSFET, 60V, 3.5A, 0.037 Ohm, TO-236AB

SC16985

SMD N Channel Power MOSFET, 60V, 3.5A, 0.037 Ohm, TO-236AB

NEXPERIA

The PMV37ENEAR from NEXPERIA is a N Channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device plastic package using Trench MOSFET technology. • Suitable for relay driver, high speed line driver, low-side load...

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N Channel 60V 3.5A 0.037ohm TO-236AB Surface Mount 10V 1.7V 710mW 3Pins 175°C - AEC-Q101
IRFBE30PBF
IRFBE30PBF - Power MOSFET, N Channel, 800 V, 4.1 A, 3 ohm, TO-220AB, Through Hole

SC16997

Power MOSFET, N Channel, 800 V, 4.1 A, 3 ohm, TO-220AB, Through Hole

VISHAY

The IRFBE30PBF is a 800V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercia...

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N Channel 800V 4.1A 3ohm TO-220AB Through Hole 10V 4V 125W 3Pins 150°C - -
SUP53P06-20-E3
SUP53P06-20-E3 - Power MOSFET, P Channel, 60 V, 53 A, 0.0195 ohm, TO-220AB, Through Hole

SC16987

Power MOSFET, P Channel, 60 V, 53 A, 0.0195 ohm, TO-220AB, Through Hole

VISHAY

The SUP53P06-20-E3 is a -60V P-channel TrenchFET® Power MOSFET. • 100% UIS Tested

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P Channel 60V 53A 0.0195ohm TO-220AB Through Hole 10V 1V 3.1W 3Pins 150°C - -
IRF3205PBF
IRF3205PBF - Power MOSFET, N Channel, 55 V, 110 A, 0.008 ohm, TO-220AB, Through Hole

SC16899

Power MOSFET, N Channel, 55 V, 110 A, 0.008 ohm, TO-220AB, Through Hole

INFINEON

The IRF3205PBF is a HEXFET® N-channel Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Advanced HEXFET® power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar...

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N Channel 55V 110A 0.008ohm TO-220AB Through Hole 10V 4V 200W 3Pins 175°C - -
STP5NK80ZFP
STP5NK80ZFP - Power MOSFET, N Channel, 800 V, 4.3 A, 1.9 ohm, TO-220FP, Through Hole

SC16947

Power MOSFET, N Channel, 800 V, 4.3 A, 1.9 ohm, TO-220FP, Through Hole

STMICROELECTRONICS

The STP5NK80ZFP is a 800V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...

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N Channel 800V 4.3A 1.9ohm TO-220FP Through Hole 10V 3.75V 30W 3Pins 150°C - -
IRFML8244TRPBF
IRFML8244TRPBF - Power MOSFET, N Channel, 25 V, 5.8 A, 0.02 ohm, SOT-23, Surface Mount

SC16788

Power MOSFET, N Channel, 25 V, 5.8 A, 0.02 ohm, SOT-23, Surface Mount

INFINEON

The IRFML8244TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Lower switching losses • Environment-f...

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N Channel 25V 5.8A 0.02ohm SOT-23 Surface Mount 10V 1.7V 1.25W 3Pins 150°C - -
SI2308BDS-T1-GE3
SI2308BDS-T1-GE3 - Power MOSFET, N Channel, 60 V, 2.3 A, 0.13 ohm, TO-236, Surface Mount

SC16728

Power MOSFET, N Channel, 60 V, 2.3 A, 0.13 ohm, TO-236, Surface Mount

VISHAY

The SI2308BDS-T1-GE3 is a N-channel TrenchFET® Power MOSFET with 175°C operating temperature. • 100% Rg Tested • 100% UIS Tested • ±20V Gate-source voltage

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N Channel 60V 2.3A 0.13ohm TO-236 Surface Mount 10V 3V 1.09W 3Pins 150°C - -
VP2106N3-G
VP2106N3-G - Power MOSFET, P Channel, 60V, 250mA, 9 Ohm, TO-92

SC15966

Power MOSFET, P Channel, 60V, 250mA, 9 Ohm, TO-92

MICROCHIP

• Channel Type : P Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 250mA • Drain Source On State Resistance : 9ohm • Transistor Case Style : TO-92 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3.5V • Power Dissipation : 1W • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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P Channel 60V 250mA 9ohm TO-92 Through Hole 10V 3.5V 1W 3Pins 150°C - -
SI7149ADP-T1-GE3
SI7149ADP-T1-GE3 - SMD P Channel Power MOSFET, 30V, 50A, 0.0042 Ohm, PowerPAK SO

SC16823

SMD P Channel Power MOSFET, 30V, 50A, 0.0042 Ohm, PowerPAK SO

VISHAY

• Suitable for battery, load and adaptor switches, notebook computers and notebook battery packs • TrenchFET® Power MOSFET • Low On-Resistance for Low Voltage Drop • Extended VGS max. Rating: 25V

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P Channel 30V 50A 0.0042ohm PowerPAK SO Surface Mount 10V 2.5V 48W 8Pins 150°C TrenchFET -
FQT7N10LTF
FQT7N10LTF - Power MOSFET, N Channel, 100 V, 1.7 A, 0.275 ohm, SOT-223, Surface Mount

SC16853

Power MOSFET, N Channel, 100 V, 1.7 A, 0.275 ohm, SOT-223, Surface Mount

ONSEMI

The FQT7N10LTF is a N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalan...

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N Channel 100V 1.7A 0.275ohm SOT-223 Surface Mount 10V 2V 2W 4Pins 150°C - -
SI2318CDS-T1-GE3
SI2318CDS-T1-GE3 - Power MOSFET, N Channel, 40 V, 3.9 A, 0.036 ohm, TO-236, Surface Mount

SC16746

Power MOSFET, N Channel, 40 V, 3.9 A, 0.036 ohm, TO-236, Surface Mount

VISHAY

• N-channel 40V (D-S) TrenchFET® power MOSFET • 100% Rg tested • Used in DC/DC converters, load switch

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N Channel 40V 3.9A 0.036ohm TO-236 Surface Mount 10V 3V 750mW 3Pins 150°C - -
FQT5P10TF
FQT5P10TF - Power MOSFET, P Channel, 100 V, 1 A, 0.82 ohm, SOT-223, Surface Mount

SC16874

Power MOSFET, P Channel, 100 V, 1 A, 0.82 ohm, SOT-223, Surface Mount

ONSEMI

The FQT5P10TF is a -100V P-channel QFET® MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche en...

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P Channel 100V 1A 0.82ohm SOT-223 Surface Mount 10V 4V 2W 3Pins 150°C - -
SIS412DN-T1-GE3
SIS412DN-T1-GE3 - Power MOSFET, N Channel, 30 V, 12 A, 0.02 ohm, PowerPAK 1212, Surface Mount

SC16901

Power MOSFET, N Channel, 30 V, 12 A, 0.02 ohm, PowerPAK 1212, Surface Mount

VISHAY

The SIS412DN-T1-GE3 is a 30V N-channel TrenchFET® Power MOSFET. Suitable for load switches, notebook PCs, desktop PCs and game station applications. The N-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and wi...

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N Channel 30V 12A 0.02ohm PowerPAK 1212 Surface Mount 10V 1V 15.6W 8Pins 150°C - -
FDT439N
FDT439N - Power MOSFET, N Channel, 30 V, 6.3 A, 0.038 ohm, SOT-223, Surface Mount

SC16892

Power MOSFET, N Channel, 30 V, 6.3 A, 0.038 ohm, SOT-223, Surface Mount

ONSEMI

The FDT439N is a 30V N-channel 2.5V specified enhancement mode Field Effect Transistor is produced using high cell density and DMOS technology. This very high density process is specially tailored to minimize on-state resistance and provide superior switch...

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N Channel 30V 6.3A 0.038ohm SOT-223 Surface Mount 4.5V 670mV 3W 4Pins 150°C - -
IRF840BPBF
IRF840BPBF - N Channel Power MOSFET, 500V, 8.7A, 0.7 Ohm, TO-220AB

SC16977

N Channel Power MOSFET, 500V, 8.7A, 0.7 Ohm, TO-220AB

VISHAY

• Suitable for displays (LCD or plasma), server and telecom power supplies, industrial applications such as welding, induction heating and motor drivers

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N Channel 500V 8.7A 0.7ohm TO-220AB Through Hole 10V 5V 156W 3Pins 150°C D -
SI1308EDL-T1-GE3
SI1308EDL-T1-GE3 - Power MOSFET, N Channel, 30 V, 1.4 A, 0.11 ohm, SOT-323, Surface Mount

SC16893

Power MOSFET, N Channel, 30 V, 1.4 A, 0.11 ohm, SOT-323, Surface Mount

VISHAY

The SI1308EDL-T1-GE3 is a 30V N-channel TrenchFET® Power MOSFET with power dissipation at 500mW. • PWM optimized for fast switching • 100% Rg Tested • Up to 1800V ESD protection • Halogen-free

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N Channel 30V 1.4A 0.11ohm SOT-323 Surface Mount 10V 600mV 500mW 3Pins 150°C E -
SI1012CR-T1-GE3
SI1012CR-T1-GE3 - Power MOSFET, N Channel, 20 V, 630 mA, 0.33 ohm, SC-75A, Surface Mount

SC16706

Power MOSFET, N Channel, 20 V, 630 mA, 0.33 ohm, SC-75A, Surface Mount

VISHAY

The SI1012CR-T1-GE3 is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays and memories drivers. • 1.2V Rated voltage • 100% Rg tested • 1000V Gate-source ESD protected • Halogen-free

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N Channel 20V 630mA 0.33ohm SC-75A Surface Mount 4.5V 400mV 240mW 3Pins 150°C - -
FDS4685
FDS4685 - Power MOSFET, P Channel, 40 V, 8.2 A, 0.022 ohm, SOIC, Surface Mount

SC16785

Power MOSFET, P Channel, 40 V, 8.2 A, 0.022 ohm, SOIC, Surface Mount

ONSEMI

The FDS4685 is a -40V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combi...

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P Channel 40V 8.2A 0.022ohm SOIC Surface Mount 10V 1.6V 1.2W 8Pins 150°C - -
PMV100EPAR
PMV100EPAR - SMD P Channel, Power MOSFET, 60V, 2.2A, 0.1 Ohm, SOT-23

SC16923

SMD P Channel, Power MOSFET, 60V, 2.2A, 0.1 Ohm, SOT-23

NEXPERIA

The PMV100EPAR from NEXPERIA is a P Channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) surface mounted device (SMD) plastic package using Trench MOSFET technology. • Suitable application: relay driver, high speed line drive...

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P Channel 60V 2.2A 0.1ohm SOT-23 Surface Mount 10V 2.5V 710mW 3Pins 175°C - AEC-Q101
IRLB8743PBF
IRLB8743PBF - Power MOSFET, N Channel, 30 V, 40 A, 0.0025 ohm, TO-220AB, Through Hole

SC16830

Power MOSFET, N Channel, 30 V, 40 A, 0.0025 ohm, TO-220AB, Through Hole

INFINEON

The IRLB8743PBF is a 30V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high frequency synchronous buck, converters for computer processor ...

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N Channel 30V 40A 0.0025ohm TO-220AB Through Hole 10V 1.8V 140W 3Pins 175°C - -
BSS139H6327XTSA1
BSS139H6327XTSA1 - Power MOSFET, N Channel, 250 V, 100 mA, 7.8 ohm, SOT-23, Surface Mount

SC16828

Power MOSFET, N Channel, 250 V, 100 mA, 7.8 ohm, SOT-23, Surface Mount

INFINEON

The BSS139H6327 is a SIPMOS® N-channel depletion mode Small Signal Transistor with one single component it is possible to realize a simple current regulator. Areas of application include power supply start-up power, overvoltage protection, in-rush-current ...

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N Channel 250V 100mA 7.8ohm SOT-23 Surface Mount 10V -1.4V 360mW 3Pins 150°C - AEC-Q101
DMP2035U
DMP2035U - Power MOSFET, Enhancement Mode, P Channel, 20 V, 3.6 A, 0.035 ohm, SOT-23, Surface Mount

SC16753

Power MOSFET, Enhancement Mode, P Channel, 20 V, 3.6 A, 0.035 ohm, SOT-23, Surface Mount

DIODES INC.

The DMP2035U from Diode Inc is a surface mount, P channel enhancement mode MOSFET in SOT-23 package. This device features low on resistance, low input capacitance, fast switching speed and low input/output leakage thus it is ideal for high efficiency power...

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P Channel 20V 3.6A 0.035ohm SOT-23 Surface Mount 4.5V 700mV 810mW 3Pins 150°C - -