Single MOSFET Transistors

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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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IRLML6401TRPBF
IRLML6401TRPBF - Power MOSFET, P Channel, 12 V, 4.3 A, 0.05 ohm, SOT-23, Surface Mount

SC16733

Power MOSFET, P Channel, 12 V, 4.3 A, 0.05 ohm, SOT-23, Surface Mount

INFINEON

The IRLML6401TRPBF is a -12V single P-channel HEXFET Power MOSFET, compatible with existing surface mount techniques. This MOSFET features increased reliability and easier manufacturing. • Halogen-free • MSL1, Industrial qualification • Multi-vendor compat...

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P Channel 12V 4.3A 0.05ohm SOT-23 Surface Mount 4.5V 550mV 1.3W 3Pins 150°C - -
NTD2955T4G
NTD2955T4G - Power MOSFET, P Channel, 60 V, 12 A, 0.155 ohm, TO-252 (DPAK), Surface Mount

SC16860

Power MOSFET, P Channel, 60 V, 12 A, 0.155 ohm, TO-252 (DPAK), Surface Mount

ONSEMI

The NTD2955T4G is a -60V P-channel Power MOSFET designed to withstand high energy in the avalanche and commutation modes. It is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls. This device ...

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P Channel 60V 12A 0.155ohm TO-252 (DPAK) Surface Mount 10V 2.8V 55W 4Pins 175°C - -
STP4NK60ZFP
STP4NK60ZFP - Power MOSFET, N Channel, 600 V, 4 A, 2 ohm, TO-220FP, Through Hole

SC16986

Power MOSFET, N Channel, 600 V, 4 A, 2 ohm, TO-220FP, Through Hole

STMICROELECTRONICS

The STP4NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...

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N Channel 600V 4A 2ohm TO-220FP Through Hole 10V 3.75V 25W 3Pins 150°C - -
IRFR9120NTRPBF
IRFR9120NTRPBF - Power MOSFET, P Channel, 100 V, 6.6 A, 0.48 ohm, TO-252 (DPAK), Surface Mount

SC16875

Power MOSFET, P Channel, 100 V, 6.6 A, 0.48 ohm, TO-252 (DPAK), Surface Mount

INFINEON

The IRFR9120NTRPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design...

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P Channel 100V 6.6A 0.48ohm TO-252 (DPAK) Surface Mount 10V 4V 40W 3Pins 150°C - -
IRFBG20PBF
IRFBG20PBF - Power MOSFET, N Channel, 1 kV, 1.3 A, 11.5 ohm, TO-220AB, Through Hole

SC16930

Power MOSFET, N Channel, 1 kV, 1.3 A, 11.5 ohm, TO-220AB, Through Hole

VISHAY

The IRFBG20PBF is a 1000V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. The ...

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N Channel 1kV 1.3A 11.5ohm TO-220AB Through Hole 10V 4V 50W 3Pins 150°C - -
IRLB3034PBF
IRLB3034PBF - Power MOSFET, N Channel, 40 V, 195 A, 0.0014 ohm, TO-220AB, Through Hole

SC16937

Power MOSFET, N Channel, 40 V, 195 A, 0.0014 ohm, TO-220AB, Through Hole

INFINEON

The IRLB3034PBF is 40V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible po...

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N Channel 40V 195A 0.0014ohm TO-220AB Through Hole 10V 2.5V 375W 3Pins 175°C - -
STP11NM60FD
STP11NM60FD - N Channel Power MOSFET, 600V, 11A, 0.4 Ohm, TO-220AB

SC16952

N Channel Power MOSFET, 600V, 11A, 0.4 Ohm, TO-220AB

STMICROELECTRONICS

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. • 100% avalanche tested • Hi...

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N Channel 600V 11A 0.4ohm TO-220AB Through Hole 10V 4V 160W 3Pins 150°C FDmesh -
IPW60R017C7XKSA1
IPW60R017C7XKSA1 - Power MOSFET, N Channel, 600 V, 109 A, 0.015 ohm, TO-247, Through Hole

SC17026

Power MOSFET, N Channel, 600 V, 109 A, 0.015 ohm, TO-247, Through Hole

INFINEON

600V CoolMOS™ C7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle suitable for use in PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. computing, se...

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N Channel 600V 109A 0.015ohm TO-247 Through Hole 10V 3.5V 446W 3Pins 150°C CoolMOS C7 -
2N7002ET1G
2N7002ET1G - Power MOSFET, N Channel, 60V, 310mA, 0.86 Ohm, SOT-23, SMD

SC15987

Power MOSFET, N Channel, 60V, 310mA, 0.86 Ohm, SOT-23, SMD

ONSEMI

The 2N7002ET1G is a N-channel small signal MOSFET in Trench technology and low drain to source voltage. Suitable for low side load switch and level shift circuits. • 1.2A Pulsed drain current • ±20V Gate-source voltage • Halogen-free

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N Channel 60V 310mA 0.86ohm SOT-23 Surface Mount 10V 1V 420mW 3Pins 150°C - -
IRFBG30PBF
IRFBG30PBF - Power MOSFET, N Channel, 1 kV, 3.1 A, 5 ohm, TO-220AB, Through Hole

SC16974

Power MOSFET, N Channel, 1 kV, 3.1 A, 5 ohm, TO-220AB, Through Hole

VISHAY

The IRFBG30PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Dr...

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N Channel 1kV 3.1A 5ohm TO-220AB Through Hole 10V 4V 125W 3Pins 150°C - -
FDPF18N50
FDPF18N50 - Power MOSFET, N Channel, 500 V, 18 A, 0.22 ohm, TO-220F, Through Hole

SC16953

Power MOSFET, N Channel, 500 V, 18 A, 0.22 ohm, TO-220F, Through Hole

ONSEMI

The FDPF18N50 is an UniFET™ high voltage MOSFET produced based on planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitab...

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N Channel 500V 18A 0.22ohm TO-220F Through Hole 10V 5V 38.5W 3Pins 150°C - -
STP6NK90Z
STP6NK90Z - Power MOSFET, N Channel, 900V, 5.8A, 2 Ohm, TO-220

SC15822

Power MOSFET, N Channel, 900V, 5.8A, 2 Ohm, TO-220

STMICROELECTRONICS

The STP6NK90Z is a 900V N-channel Zener-protected SuperMESH™ Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, speci...

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N Channel 900V 5.8A 2ohm TO-220 Through Hole 10V 3.75V 140W 3Pins 150°C - -
2N7002K-T1-GE3
2N7002K-T1-GE3 - Power MOSFET, N Channel, 60 V, 190 mA, 2 ohm, SOT-23, Surface Mount

SC16724

Power MOSFET, N Channel, 60 V, 190 mA, 2 ohm, SOT-23, Surface Mount

VISHAY

The 2N7002K-T1-GE3 is a TrenchFET® N-channel enhancement-mode Power MOSFET offers low Input and output leakage. • 2Ω Low ON-resistance • 2V Low threshold • 25pF Low input capacitance • 25ns Fast switching speed • 2000V ESD Protection • Halogen-free • Low o...

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N Channel 60V 190mA 2ohm SOT-23 Surface Mount 10V 1V 350mW 3Pins 150°C - -
IRLML0030TRPBF
IRLML0030TRPBF - Power MOSFET, N Channel, 30 V, 5.3 A, 0.022 ohm, SOT-23, Surface Mount

SC16720

Power MOSFET, N Channel, 30 V, 5.3 A, 0.022 ohm, SOT-23, Surface Mount

INFINEON

The IRLML0030TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Multi-vendor compatibility • Environme...

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N Channel 30V 5.3A 0.022ohm SOT-23 Surface Mount 10V 1.7V 1.3W 3Pins 150°C - -
PMV37ENEAR
PMV37ENEAR - SMD N Channel Power MOSFET, 60V, 3.5A, 0.037 Ohm, TO-236AB

SC16985

SMD N Channel Power MOSFET, 60V, 3.5A, 0.037 Ohm, TO-236AB

NEXPERIA

The PMV37ENEAR from NEXPERIA is a N Channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device plastic package using Trench MOSFET technology. • Suitable for relay driver, high speed line driver, low-side load...

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N Channel 60V 3.5A 0.037ohm TO-236AB Surface Mount 10V 1.7V 710mW 3Pins 175°C - AEC-Q101
VNP20N07-E
VNP20N07-E - Power MOSFET, N Channel, 80V, 10A, 0.05 ohm, TO-220

SC15832

Power MOSFET, N Channel, 80V, 10A, 0.05 ohm, TO-220

STMICROELECTRONICS

The VNP20N07-E is a 70V Fully Auto Protected Power MOSFET made using VIPower technology intended for replacement of standard power MOSFETS in DC to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the c...

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N Channel 80V 10A 0.05ohm TO-220 Through Hole 10V 3V 83W 3Pins 150°C - -
SI2309CDS-T1-GE3
SI2309CDS-T1-GE3 - Power MOSFET, P Channel, 60 V, 1.6 A, 0.285 ohm, SOT-23, Surface Mount

SC16750

Power MOSFET, P Channel, 60 V, 1.6 A, 0.285 ohm, SOT-23, Surface Mount

VISHAY

The SI2309CDS-T1-GE3 is a P-Channel 60V Power MOSFET with ±20V gate source voltage. It works on TrenchFET® power MOSFET technology. • Halogen-free

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P Channel 60V 1.6A 0.285ohm SOT-23 Surface Mount 10V 1V 1.7W 3Pins 150°C - -
BSS123L
BSS123L - Power MOSFET, N Channel, 100 V, 170 mA, 2.98 ohm, SOT-23, Surface Mount

SC16764

Power MOSFET, N Channel, 100 V, 170 mA, 2.98 ohm, SOT-23, Surface Mount

ONSEMI

The BSS123L is produced using high cell density trench MOSFET technology. This minimizes on-state resistance while providing rugged, reliable and fast switching performance. The BSS123L is particularly suited for low voltage, low current applications such ...

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N Channel 100V 170mA 2.98ohm SOT-23 Surface Mount 10V 1.405V 360mW 3Pins 150°C - -
BSS316NH6327XTSA1
BSS316NH6327XTSA1 - Power MOSFET, N Channel, 30 V, 1.4 A, 0.119 ohm, SOT-23, Surface Mount

SC16768

Power MOSFET, N Channel, 30 V, 1.4 A, 0.119 ohm, SOT-23, Surface Mount

INFINEON

The BSS316N H6327 is an OptiMOS™2 N-channel logic level enhancement mode Small Signal Transistor, logic level (4.5V rated) and avalanche rated. • ±20V Gate-source voltage • 260°C Soldering temperature • AEC-Q101 Qualified • Halogen-free

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N Channel 30V 1.4A 0.119ohm SOT-23 Surface Mount 10V 1.6V 500mW 3Pins 150°C - AEC-Q101
BSP318SH6327XTSA1
BSP318SH6327XTSA1 - Power MOSFET, N Channel, 60 V, 2.6 A, 0.07 ohm, SOT-223, Surface Mount

SC16992

Power MOSFET, N Channel, 60 V, 2.6 A, 0.07 ohm, SOT-223, Surface Mount

INFINEON

• 60V, 2.6A SIPMOS® N-channel small signal transistor in 4 pin SOT-223 package • Enhancement mode • Avalanche rated • Logic level • dv/dt rated • Qualified according to AEC-Q101

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N Channel 60V 2.6A 0.07ohm SOT-223 Surface Mount 10V 1.6V 1.8W 4Pins 150°C - -
STN3NF06L
STN3NF06L - Power MOSFET, N Channel, 60 V, 4 A, 0.07 ohm, SOT-223, Surface Mount

SC16819

Power MOSFET, N Channel, 60 V, 4 A, 0.07 ohm, SOT-223, Surface Mount

STMICROELECTRONICS

• 60V, 4A N-channel STripFET™ II power MOSFET in a 4 pin SOT-223 package • Exceptional dv/dt capability • 100% avalanche tested • Low threshold drive • Suitable for switching applications • Specifically designed to minimize input capacitance and gate char...

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N Channel 60V 4A 0.07ohm SOT-223 Surface Mount 10V 2.8V 3.3W 4Pins 150°C - -
SQ2318AES-T1_GE3
SQ2318AES-T1_GE3 - SMD Automotive N-Channel MOSFET Transistor, SOT-23, 40V, 8A

SC16702

SMD Automotive N-Channel MOSFET Transistor, SOT-23, 40V, 8A

VISHAY

• TrenchFET® Power MOSFET • AEC-Q101 Qualified • 100% Rg and UIS Tested

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N Channel 40V 8A 0.125ohm SOT-23 Surface Mount 10V 2V 3.3W 3Pins 175°C TrenchFET AEC-Q101
2N7002NXAKR
2N7002NXAKR - Power MOSFET, Trench, N Channel, 60V, 190mA, 3 Ohm, TO-236AB, SMD

SC15954

Power MOSFET, Trench, N Channel, 60V, 190mA, 3 Ohm, TO-236AB, SMD

NEXPERIA

• Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 190mA • Drain Source On State Resistance : 3ohm • Transistor Case Style : TO-236AB • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 1.6V • Power Dissipation : 265mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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N Channel 60V 190mA 3ohm TO-236AB Surface Mount 10V 1.6V 265mW 3Pins 150°C - -
STP10NK60ZFP
STP10NK60ZFP - Power MOSFET, N Channel, 600 V, 10 A, 0.65 ohm, TO-220FP, Through Hole

SC17005

Power MOSFET, N Channel, 600 V, 10 A, 0.65 ohm, TO-220FP, Through Hole

STMICROELECTRONICS

The STP10NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this MOSFET i...

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N Channel 600V 10A 0.65ohm TO-220FP Through Hole 10V 3.75V 35W 3Pins 150°C - -
BSS138BK,215
BSS138BK,215 - Power MOSFET, N Channel, 60V, 360mA, 1 Ohm, SOT-23, SMD

SC15993

Power MOSFET, N Channel, 60V, 360mA, 1 Ohm, SOT-23, SMD

NEXPERIA

The BSS138BK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic Level Compatible • Very Fast Switching • ESD Protection Upto 1.5kV • AEC-Q101 Qualified

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N Channel 60V 360mA 1ohm SOT-23 Surface Mount 10V 1.1V 350mW 3Pins 150°C - -