Single MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML6401TRPBF
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SC16733 |
Power MOSFET, P Channel, 12 V, 4.3 A, 0.05 ohm, SOT-23, Surface Mount INFINEON The IRLML6401TRPBF is a -12V single P-channel HEXFET Power MOSFET, compatible with existing surface mount techniques. This MOSFET features increased reliability and easier manufacturing. • Halogen-free • MSL1, Industrial qualification • Multi-vendor compat...
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P Channel | 12V | 4.3A | 0.05ohm | SOT-23 | Surface Mount | 4.5V | 550mV | 1.3W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTD2955T4G
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SC16860 |
Power MOSFET, P Channel, 60 V, 12 A, 0.155 ohm, TO-252 (DPAK), Surface Mount ONSEMI The NTD2955T4G is a -60V P-channel Power MOSFET designed to withstand high energy in the avalanche and commutation modes. It is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls. This device ...
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P Channel | 60V | 12A | 0.155ohm | TO-252 (DPAK) | Surface Mount | 10V | 2.8V | 55W | 4Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STP4NK60ZFP
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SC16986 |
Power MOSFET, N Channel, 600 V, 4 A, 2 ohm, TO-220FP, Through Hole STMICROELECTRONICS The STP4NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...
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N Channel | 600V | 4A | 2ohm | TO-220FP | Through Hole | 10V | 3.75V | 25W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR9120NTRPBF
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SC16875 |
Power MOSFET, P Channel, 100 V, 6.6 A, 0.48 ohm, TO-252 (DPAK), Surface Mount INFINEON The IRFR9120NTRPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design...
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P Channel | 100V | 6.6A | 0.48ohm | TO-252 (DPAK) | Surface Mount | 10V | 4V | 40W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFBG20PBF
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SC16930 |
Power MOSFET, N Channel, 1 kV, 1.3 A, 11.5 ohm, TO-220AB, Through Hole VISHAY The IRFBG20PBF is a 1000V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. The ...
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N Channel | 1kV | 1.3A | 11.5ohm | TO-220AB | Through Hole | 10V | 4V | 50W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLB3034PBF
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SC16937 |
Power MOSFET, N Channel, 40 V, 195 A, 0.0014 ohm, TO-220AB, Through Hole INFINEON The IRLB3034PBF is 40V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible po...
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N Channel | 40V | 195A | 0.0014ohm | TO-220AB | Through Hole | 10V | 2.5V | 375W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP11NM60FD
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SC16952 |
N Channel Power MOSFET, 600V, 11A, 0.4 Ohm, TO-220AB STMICROELECTRONICS The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. • 100% avalanche tested • Hi...
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N Channel | 600V | 11A | 0.4ohm | TO-220AB | Through Hole | 10V | 4V | 160W | 3Pins | 150°C | FDmesh | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPW60R017C7XKSA1
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SC17026 |
Power MOSFET, N Channel, 600 V, 109 A, 0.015 ohm, TO-247, Through Hole INFINEON 600V CoolMOS™ C7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle suitable for use in PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. computing, se...
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N Channel | 600V | 109A | 0.015ohm | TO-247 | Through Hole | 10V | 3.5V | 446W | 3Pins | 150°C | CoolMOS C7 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002ET1G
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SC15987 |
Power MOSFET, N Channel, 60V, 310mA, 0.86 Ohm, SOT-23, SMD ONSEMI The 2N7002ET1G is a N-channel small signal MOSFET in Trench technology and low drain to source voltage. Suitable for low side load switch and level shift circuits. • 1.2A Pulsed drain current • ±20V Gate-source voltage • Halogen-free
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N Channel | 60V | 310mA | 0.86ohm | SOT-23 | Surface Mount | 10V | 1V | 420mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFBG30PBF
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SC16974 |
Power MOSFET, N Channel, 1 kV, 3.1 A, 5 ohm, TO-220AB, Through Hole VISHAY The IRFBG30PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Dr...
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N Channel | 1kV | 3.1A | 5ohm | TO-220AB | Through Hole | 10V | 4V | 125W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDPF18N50
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SC16953 |
Power MOSFET, N Channel, 500 V, 18 A, 0.22 ohm, TO-220F, Through Hole ONSEMI The FDPF18N50 is an UniFET™ high voltage MOSFET produced based on planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitab...
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N Channel | 500V | 18A | 0.22ohm | TO-220F | Through Hole | 10V | 5V | 38.5W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP6NK90Z
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SC15822 |
Power MOSFET, N Channel, 900V, 5.8A, 2 Ohm, TO-220 STMICROELECTRONICS The STP6NK90Z is a 900V N-channel Zener-protected SuperMESH™ Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, speci...
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N Channel | 900V | 5.8A | 2ohm | TO-220 | Through Hole | 10V | 3.75V | 140W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002K-T1-GE3
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SC16724 |
Power MOSFET, N Channel, 60 V, 190 mA, 2 ohm, SOT-23, Surface Mount VISHAY The 2N7002K-T1-GE3 is a TrenchFET® N-channel enhancement-mode Power MOSFET offers low Input and output leakage. • 2Ω Low ON-resistance • 2V Low threshold • 25pF Low input capacitance • 25ns Fast switching speed • 2000V ESD Protection • Halogen-free • Low o...
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N Channel | 60V | 190mA | 2ohm | SOT-23 | Surface Mount | 10V | 1V | 350mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML0030TRPBF
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SC16720 |
Power MOSFET, N Channel, 30 V, 5.3 A, 0.022 ohm, SOT-23, Surface Mount INFINEON The IRLML0030TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Multi-vendor compatibility • Environme...
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N Channel | 30V | 5.3A | 0.022ohm | SOT-23 | Surface Mount | 10V | 1.7V | 1.3W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMV37ENEAR
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SC16985 |
SMD N Channel Power MOSFET, 60V, 3.5A, 0.037 Ohm, TO-236AB NEXPERIA The PMV37ENEAR from NEXPERIA is a N Channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device plastic package using Trench MOSFET technology. • Suitable for relay driver, high speed line driver, low-side load...
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N Channel | 60V | 3.5A | 0.037ohm | TO-236AB | Surface Mount | 10V | 1.7V | 710mW | 3Pins | 175°C | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VNP20N07-E
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SC15832 |
Power MOSFET, N Channel, 80V, 10A, 0.05 ohm, TO-220 STMICROELECTRONICS The VNP20N07-E is a 70V Fully Auto Protected Power MOSFET made using VIPower technology intended for replacement of standard power MOSFETS in DC to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the c...
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N Channel | 80V | 10A | 0.05ohm | TO-220 | Through Hole | 10V | 3V | 83W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2309CDS-T1-GE3
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SC16750 |
Power MOSFET, P Channel, 60 V, 1.6 A, 0.285 ohm, SOT-23, Surface Mount VISHAY The SI2309CDS-T1-GE3 is a P-Channel 60V Power MOSFET with ±20V gate source voltage. It works on TrenchFET® power MOSFET technology. • Halogen-free
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P Channel | 60V | 1.6A | 0.285ohm | SOT-23 | Surface Mount | 10V | 1V | 1.7W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS123L
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SC16764 |
Power MOSFET, N Channel, 100 V, 170 mA, 2.98 ohm, SOT-23, Surface Mount ONSEMI The BSS123L is produced using high cell density trench MOSFET technology. This minimizes on-state resistance while providing rugged, reliable and fast switching performance. The BSS123L is particularly suited for low voltage, low current applications such ...
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N Channel | 100V | 170mA | 2.98ohm | SOT-23 | Surface Mount | 10V | 1.405V | 360mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS316NH6327XTSA1
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SC16768 |
Power MOSFET, N Channel, 30 V, 1.4 A, 0.119 ohm, SOT-23, Surface Mount INFINEON The BSS316N H6327 is an OptiMOS™2 N-channel logic level enhancement mode Small Signal Transistor, logic level (4.5V rated) and avalanche rated. • ±20V Gate-source voltage • 260°C Soldering temperature • AEC-Q101 Qualified • Halogen-free
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N Channel | 30V | 1.4A | 0.119ohm | SOT-23 | Surface Mount | 10V | 1.6V | 500mW | 3Pins | 150°C | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSP318SH6327XTSA1
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SC16992 |
Power MOSFET, N Channel, 60 V, 2.6 A, 0.07 ohm, SOT-223, Surface Mount INFINEON • 60V, 2.6A SIPMOS® N-channel small signal transistor in 4 pin SOT-223 package • Enhancement mode • Avalanche rated • Logic level • dv/dt rated • Qualified according to AEC-Q101
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N Channel | 60V | 2.6A | 0.07ohm | SOT-223 | Surface Mount | 10V | 1.6V | 1.8W | 4Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STN3NF06L
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SC16819 |
Power MOSFET, N Channel, 60 V, 4 A, 0.07 ohm, SOT-223, Surface Mount STMICROELECTRONICS • 60V, 4A N-channel STripFET™ II power MOSFET in a 4 pin SOT-223 package • Exceptional dv/dt capability • 100% avalanche tested • Low threshold drive • Suitable for switching applications • Specifically designed to minimize input capacitance and gate char...
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N Channel | 60V | 4A | 0.07ohm | SOT-223 | Surface Mount | 10V | 2.8V | 3.3W | 4Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQ2318AES-T1_GE3
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SC16702 |
SMD Automotive N-Channel MOSFET Transistor, SOT-23, 40V, 8A VISHAY • TrenchFET® Power MOSFET • AEC-Q101 Qualified • 100% Rg and UIS Tested
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N Channel | 40V | 8A | 0.125ohm | SOT-23 | Surface Mount | 10V | 2V | 3.3W | 3Pins | 175°C | TrenchFET | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002NXAKR
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SC15954 |
Power MOSFET, Trench, N Channel, 60V, 190mA, 3 Ohm, TO-236AB, SMD NEXPERIA • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 190mA • Drain Source On State Resistance : 3ohm • Transistor Case Style : TO-236AB • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 1.6V • Power Dissipation : 265mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 60V | 190mA | 3ohm | TO-236AB | Surface Mount | 10V | 1.6V | 265mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP10NK60ZFP
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SC17005 |
Power MOSFET, N Channel, 600 V, 10 A, 0.65 ohm, TO-220FP, Through Hole STMICROELECTRONICS The STP10NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this MOSFET i...
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N Channel | 600V | 10A | 0.65ohm | TO-220FP | Through Hole | 10V | 3.75V | 35W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138BK,215
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SC15993 |
Power MOSFET, N Channel, 60V, 360mA, 1 Ohm, SOT-23, SMD NEXPERIA The BSS138BK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic Level Compatible • Very Fast Switching • ESD Protection Upto 1.5kV • AEC-Q101 Qualified
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N Channel | 60V | 360mA | 1ohm | SOT-23 | Surface Mount | 10V | 1.1V | 350mW | 3Pins | 150°C | - | - |