Single MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7000-D26Z
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SC15741 |
Power MOSFET, N Channel, 60V, 200mA, 5 Ohm, TO-92 ONSEMI The 2N7000_D26Z is a 60V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. It has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. This can be...
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N Channel | 60V | 200mA | 5ohm | TO-92 | Through Hole | 10V | 2.1V | 400mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SUP90P06-09L-E3
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SC16831 |
Power MOSFET, P Channel, 60 V, 90 A, 0.0074 ohm, TO-220AB, Through Hole VISHAY The SUP90P06-09L-E3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage • 62°C/W Junction-to-ambient free air thermal resistance • 0.6°C/W Junction-to-case thermal resistance
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P Channel | 60V | 90A | 0.0074ohm | TO-220AB | Through Hole | 10V | 1V | 2.4W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N7002KT1G
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SC15991 |
Power MOSFET, N Channel, 60V, 380mA, 1.19 Ohm, SOT-23, SMD ONSEMI The 2N7002KT1G is a N-channel Small Signal MOSFET offers 60V drain source voltage and 320mA steady state drain current. It is suitable for low side load switch, level shift circuits, DC-to-DC converter, portable DSC and PDA applications. • Low RDS (ON) • S...
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N Channel | 60V | 380mA | 1.19ohm | SOT-23 | Surface Mount | 10V | 2.3V | 420mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMV48XP,215
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SC16841 |
Power MOSFET, P Channel, 20 V, 3.5 A, 0.048 ohm, SOT-23, Surface Mount NEXPERIA The PMV48XP is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, High-side load-switch and switching circuit applications. • Logic-level...
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P Channel | 20V | 3.5A | 0.048ohm | SOT-23 | Surface Mount | 4.5V | 1V | 510mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR9024NTRPBF
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SC16835 |
Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-252AA, Surface Mount INFINEON The IRFR9024NTRPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design...
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P Channel | 55V | 11A | 0.175ohm | TO-252AA | Surface Mount | 10V | 4V | 38W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD18540Q5BT
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SC16687 |
SMD Power MOSFET N Channel NexFET Transistor, 60V, 100A TEXAS INSTRUMENTS The CSD18540Q5BT is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in DC-to-DC conversion, secondary side synchronous rectifier and isolated converter primary side switch applications. ...
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N Channel | 60V | 100A | 0.0018ohm | VSON | Surface Mount | 10V | 1.9V | 195W | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSH108,215
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SC16727 |
Power MOSFET, N Channel, 30 V, 1.9 A, 0.077 ohm, SOT-23, Surface Mount NEXPERIA The BSH108,215 is a N-channel enhancement-mode FET in a plastic package using TrenchMOS™1 technology. It is suitable for use in battery management, high speed switch and low power DC to DC converter applications. • Very fast switching • Logic level compati...
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N Channel | 30V | 1.9A | 0.077ohm | SOT-23 | Surface Mount | 10V | 1.5V | 830mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP27N60KPBF
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SC15838 |
Power MOSFET, N Channel, 600V, 27A, 0.22 ohm, TO-247AC VISHAY The IRFP27N60KPBF is a 600V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching and motor drive applications. • E...
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N Channel | 600V | 27A | 0.22ohm | TO-247AC | Through Hole | 10V | 5V | 500W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLR3110ZTRPBF
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SC15961 |
Power MOSFET, N Channel, 100V, 42A, 0.011 Ohm, TO-252AA, SMD INFINEON • HEXFET® power MOSFET specifically designed for Industrial applications • Advanced process technology • Ultra-low on-resistance • 175°C operating temperature • Fast switching • Repetitive avalanche allowed up to Tjmax
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N Channel | 100V | 42A | 0.011ohm | TO-252AA | Surface Mount | 10V | 1V | 140W | 3Pins | 175°C | HEXFET | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPP17N80C3XKSA1
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SC16976 |
Power MOSFET, N Channel, 800 V, 17 A, 0.25 ohm, TO-220, Through Hole INFINEON The SPP17N80C3 is a 800V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is designed for high DC bulk voltage and switching applications. • New revolutionary high voltage technology • Extreme dV/dt rated • High peak current capability •...
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N Channel | 800V | 17A | 0.25ohm | TO-220 | Through Hole | 10V | 3V | 227W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD18537NQ5A
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SC17013 |
Power MOSFET, N Channel, 60 V, 50 A, 0.01 ohm, VSON, Surface Mount TEXAS INSTRUMENTS • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 50A • Drain Source On State Resistance : 0.01ohm • Transistor Case Style : VSON • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3V • Power Dissipation : 75W • No. of Pins : 8Pins • Operating Temperature Max : 150°C • Product Range : NexFET
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N Channel | 60V | 50A | 0.01ohm | VSON | Surface Mount | 10V | 3V | 75W | 8Pins | 150°C | NexFET | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMN6140L-7
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SC16777 |
Power MOSFET, N Channel, 60 V, 1.6 A, 0.14 ohm, SOT-23, Surface Mount DIODES INC. The DMN6140L-7 from DIODES is a 60V N Channel enhanced mode MOSFET, it's designed to minimise the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Suitable for DC to D...
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N Channel | 60V | 1.6A | 0.14ohm | SOT-23 | Surface Mount | 10V | 3V | 700mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP6NK60ZFP
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SC16906 |
Power MOSFET, N Channel, 600 V, 6 A, 1.2 ohm, TO-220FP, Through Hole STMICROELECTRONICS The STP6NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...
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N Channel | 600V | 6A | 1.2ohm | TO-220FP | Through Hole | 10V | 3.75V | 32W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML0100TRPBF
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SC16769 |
Power MOSFET, N Channel, 100 V, 1.6 A, 0.178 ohm, SOT-23, Surface Mount INFINEON The IRLML0100TRPBF is a N-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard Pinout • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount
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N Channel | 100V | 1.6A | 0.178ohm | SOT-23 | Surface Mount | 10V | 2.5V | 1.3W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002ET1G
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SC15987 |
Power MOSFET, N Channel, 60V, 310mA, 0.86 Ohm, SOT-23, SMD ONSEMI The 2N7002ET1G is a N-channel small signal MOSFET in Trench technology and low drain to source voltage. Suitable for low side load switch and level shift circuits. • 1.2A Pulsed drain current • ±20V Gate-source voltage • Halogen-free
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N Channel | 60V | 310mA | 0.86ohm | SOT-23 | Surface Mount | 10V | 1V | 420mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFBG30PBF
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SC16974 |
Power MOSFET, N Channel, 1 kV, 3.1 A, 5 ohm, TO-220AB, Through Hole VISHAY The IRFBG30PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Dr...
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N Channel | 1kV | 3.1A | 5ohm | TO-220AB | Through Hole | 10V | 4V | 125W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS214NWH6327XTSA1
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SC16812 |
Power MOSFET, N Channel, 20 V, 1.5 A, 0.106 ohm, SOT-323, Surface Mount INFINEON • N-channel OptiMOS™2 small signal transistor • Enhancement mode • Super logic level (2.5V rated) • Avalanche rated • Qualified according to AEC Q101
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N Channel | 20V | 1.5A | 0.106ohm | SOT-323 | Surface Mount | 4.5V | 950mV | 500mW | 3Pins | 150°C | OptiMOS 2 | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS170F
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SC16817 |
SMD N CHannel Power MOSFET, 60V, 150mA, 5 Ohm, SOT 23 DIODES INC. • Automotive grade AEC-Q101 qualified • Drain to source Voltage (Vds) of 60V • Gate to source voltage (Vgs) of ±20 • Continuous drain current (Id) 0.15mA to 25°C • Power dissipation (pd) of 330mW • Operating temperature range -55°C to 150°C • Low on state...
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N Channel | 60V | 150mA | 5ohm | SOT-23 | Surface Mount | 10V | 3V | 330mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BUZ11-NR4941
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SC15774 |
Power MOSFET, N Channel, 50V, 30A, 0.03 Ohm, TO-220AB ONSEMI The BUZ11_NR4941 is a 50V N-channel Power MOSFET designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive pow...
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N Channel | 50V | 30A | 0.03ohm | TO-220AB | Through Hole | 10V | 3V | 75W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138AKAR
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SC16003 |
Power MOSFET, N Channel, 60V, 200mA, 2.7 Ohm, SOT-23, SMD NEXPERIA The BSS138AKA is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. The single N-channel Trench MOSFET suitable for relay driver, high-speed line driver, low-side load switch and switching circuit appl...
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N Channel | 60V | 200mA | 2.7ohm | SOT-23 | Surface Mount | 10V | 1.2V | 360mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP80NF10
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SC16882 |
Power MOSFET, N Channel, 100 V, 80 A, 0.012 ohm, TO-220, Through Hole STMICROELECTRONICS The STP80NF10 is a 100V N-channel STripFET™ II Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isola...
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N Channel | 100V | 80A | 0.012ohm | TO-220 | Through Hole | 10V | 3V | 300W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI7489DP-T1-GE3
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SC16825 |
Power MOSFET, P Channel, 100 V, 28 A, 0.033 ohm, PowerPAK SO, Surface Mount VISHAY The SI7489DP-T1-GE3 is a -100V P-channel TrenchFET® Power MOSFET. The P-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and with the capability to handle 85A. • Halogen-free according to IEC 61249-2-21 definit...
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P Channel | 100V | 28A | 0.033ohm | PowerPAK SO | Surface Mount | 10V | 3V | 83W | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN339AN
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SC16732 |
Power MOSFET, N Channel, 20 V, 3 A, 0.035 ohm, SOT-23, Surface Mount ONSEMI The FDN339AN is a 20V N-channel 2.5V Specified PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power...
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N Channel | 20V | 3A | 0.035ohm | SOT-23 | Surface Mount | 4.5V | 1.5V | 500mW | 3Pins | 150°C | PowerTrench Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP460BPBF
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SC16928 |
N Channel Power MOSFET, 500V, 20A, 0.2 Ohm, TO-247AC VISHAY • Suitable applications: displays for LCD or plasma TVs, server & telecom power supplies, industrial equipment such as welding, induction heating and motor drives
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N Channel | 500V | 20A | 0.2ohm | TO-247AC | Through Hole | 10V | 4V | 278W | 3Pins | 150°C | D | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP6NK90Z
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SC15822 |
Power MOSFET, N Channel, 900V, 5.8A, 2 Ohm, TO-220 STMICROELECTRONICS The STP6NK90Z is a 900V N-channel Zener-protected SuperMESH™ Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, speci...
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N Channel | 900V | 5.8A | 2ohm | TO-220 | Through Hole | 10V | 3.75V | 140W | 3Pins | 150°C | - | - |