Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

Diodes Thyristors, DIACS & TRIACS Npn Transistors Pnp Transistors Photo Transistors
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  Manufacturer Part No Order Code Description / Manufacturer
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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Power Dissipation Transistor Case Style Drain Source On State Resistance
 
 
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NDS352AP
NDS352AP - Power MOSFET, P Channel, 30 V, 900 mA, 0.3 ohm, SuperSOT, Surface Mount

SC11034

Power MOSFET, P Channel, 30 V, 900 mA, 0.3 ohm, SuperSOT, Surface Mount

ONSEMI

The NDS352AP is a P-channel Logic Level Enhancement Mode Power Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device is particularly sui...

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P Channel 30V 900mA 500mW - 0.3ohm
MJE13007
MJE13007 - Bipolar (BJT) Single Transistor, NPN, 400V, 8A, 80W

SCMJE13007

Bipolar (BJT) Single Transistor, NPN, 400V, 8A, 80W

ONSEMI

• Power Dissipation : 80W • Transistor Case Style : TO-220

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- - - 80W TO-220 -
FDN338P
FDN338P - Power MOSFET, P Channel, 20 V, 1.6 A, 0.115 ohm, SOT-23, Surface Mount

SC11041

Power MOSFET, P Channel, 20 V, 1.6 A, 0.115 ohm, SOT-23, Surface Mount

ONSEMI

The FDN338P is a 2.5V specified P-channel MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management and load switch applications. The SuperSOT™ -3 provides low RDS (ON) and 30% higher power handling capabilit...

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P Channel 20V 1.6A 500mW - 0.115ohm
BC856
BC856 - Transistor, PNP SOT23

SC06598

Transistor, PNP SOT23

NXP

• Power Dissipation : 250mW • Transistor Case Style : SOT-23

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- - - 250mW SOT-23 -
ZVN2106G
ZVN2106G - Power MOSFET, N Channel, 60 V, 700 mA, 2 ohm, SOT-223, Surface Mount

SC11051

Power MOSFET, N Channel, 60 V, 700 mA, 2 ohm, SOT-223, Surface Mount

DIODES INC.

The ZVN2106G is a 60V N-channel Enhancement Mode Vertical MOSFET with matte tin plated terminals. The MOSFET is ideal for solenoids/relay driver for automotive and DC-DC converters. • Maximum continuous drain current • AEC-Q101 qualified • UL94V-0 Flammabi...

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N Channel 60V 700mA 2W SOT-223 2ohm
IRF740APBF
IRF740APBF - Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole

SC11085

Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole

VISHAY

The IRF740APBF is a 400V N-channel Power MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching. • Improved gate, avalanche and dyn...

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N Channel 400V 10A 125W TO-220AB 0.55ohm
IRFP4668PBF
IRFP4668PBF - Power MOSFET, N Channel, 200 V, 130 A, 0.0097 ohm, TO-247AC, Through Hole

SC11169

Power MOSFET, N Channel, 200 V, 130 A, 0.0097 ohm, TO-247AC, Through Hole

INFINEON

The IRFP4668PBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET featured with improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterrupti...

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N Channel 200V 130A 520W - 0.0097ohm
STP10NK60Z
STP10NK60Z - Power MOSFET, N Channel, 600 V, 10 A, 0.75 ohm, TO-220, Through Hole

SC08225

Power MOSFET, N Channel, 600 V, 10 A, 0.75 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP10NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip based PowerME...

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N Channel 600V 10A 115W TO-220 0.75ohm
MJ15016G
MJ15016G - Transistor, PNP, TO3

SC09270

Transistor, PNP, TO3

ONSEMI

The MJ15016G is a -120V Silicon PNP Bipolar Complementary High Power Transistor designed for high power audio, disk head positioners and other linear applications. The transistor can also be used in power switching circuits such as relay or solenoid driver...

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- - - 180W TO-3 -
TIP32C
TIP32C - Transistor, PNP, TO220

SC06765

Transistor, PNP, TO220

MULTICOMP PRO

The TIP32C is a high-performance transistor designed to handle high currents and voltages, making it an ideal choice for demanding applications such as audio amplifiers, power supplies, and switching circuits. With its high current handling capability and ...

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- - - 40W TO-220 -
FDN304P
FDN304P - Power MOSFET, P Channel, 20 V, 2.4 A, 0.052 ohm, SuperSOT, Surface Mount

SC07004

Power MOSFET, P Channel, 20 V, 2.4 A, 0.052 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN304P is P channel 1.8V specified PowerTrench MOSFET in superSOT-3 package. This product features fast switching speed, high performance trench technology for extremely low Rds(on), thus suite for applications such as battery management, load switch ...

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P Channel 20V 2.4A 500mW - 0.052ohm
HUF75339P3
HUF75339P3 - Power MOSFET, N Channel, 55 V, 75 A, 0.012 ohm, TO-220AB, Through Hole

SC12748

Power MOSFET, N Channel, 55 V, 75 A, 0.012 ohm, TO-220AB, Through Hole

ONSEMI

The HUF75339P3 is a 55V N-channel UltraFET Power MOSFET. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche...

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N Channel 55V 75A 200W TO-220AB 0.012ohm
IRF2907ZPBF
IRF2907ZPBF - Power MOSFET, N Channel, 75 V, 170 A, 0.0045 ohm, TO-220, Through Hole

SC08253

Power MOSFET, N Channel, 75 V, 170 A, 0.0045 ohm, TO-220, Through Hole

INFINEON

The IRF2907ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching spee...

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N Channel - - 330W - 0.0045ohm
BU406
BU406 - Transistor, NPN, TO220

SC06796

Transistor, NPN, TO220

MULTICOMP PRO

The BU406 is a NPN Power Transistor for horizontal deflection output stages of TV and CTV circuits. • High voltage • Collector-emitter sustaining voltage (Vceo (sus) = 400V minimum) • Low saturation voltage • Fast switching speed • Multicomp Pro products a...

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- - - 60W TO-220 -
ZVN3310F
ZVN3310F - Power MOSFET, N Channel, 100 V, 100 mA, 10 ohm, SOT-23, Surface Mount

SC07001

Power MOSFET, N Channel, 100 V, 100 mA, 10 ohm, SOT-23, Surface Mount

DIODES INC.

The ZVN3310F is an N-channel Enhancement Mode MOSFET utilizes a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench techno...

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N Channel 100V 100mA 330mW SOT-23 10ohm
IRF3205ZPBF
IRF3205ZPBF - Power MOSFET, Automotive, N Channel, 55 V, 110 A, 0.0065 ohm, TO-220AB, Through Hole

SC11149

Power MOSFET, Automotive, N Channel, 55 V, 110 A, 0.0065 ohm, TO-220AB, Through Hole

INFINEON

The IRF3205ZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and i...

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N Channel 55V 110A 170W - 0.0065ohm
SMBT3904
SMBT3904 - Transistor, NPN, SOT23

SC10623

Transistor, NPN, SOT23

INFINEON

• Power Dissipation : 330mW • Transistor Case Style : SOT-23

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- - - 330mW SOT-23 -
2N5551
2N5551 - Si-N 180V 0.6A 0.31W TO92 Q14

SC06652

Si-N 180V 0.6A 0.31W TO92 Q14

ONSEMI

The 2N5551 is a through hole, NPN general purpose amplifier in TO-92 package. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Collector to emitter breakdown voltage of 160V • Collector to emitter sat...

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- - - 625mW - -
D45H8G
D45H8G - Transistor, PNP, TO220

SC06761

Transistor, PNP, TO220

ONSEMI

The D45H8G is a 10A PNP bipolar Power Transistor offers low collector-emitter saturation voltage. It can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters a...

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- - - 70W TO-220 -
FZT653
FZT653 - Transistor, NPN, SOT223

SC10978

Transistor, NPN, SOT223

DIODES INC.

The FZT653 is a NPN High Performance Transistor with matte tin-plated terminals, UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FZT753 • Level-1 per J-STD-020 moisture sensitivity • G...

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- - - 2W SOT-223 -
IRF3415PBF
IRF3415PBF - Power MOSFET, N Channel, 150 V, 37 A, 0.042 ohm, TO-220AB, Through Hole

SC11109

Power MOSFET, N Channel, 150 V, 37 A, 0.042 ohm, TO-220AB, Through Hole

INFINEON

The IRF3415PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, pr...

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N Channel 150V 37A 150W - 0.042ohm
IRF9520PBF
IRF9520PBF - Power MOSFET, P Channel, 100 V, 6 A, 0.6 ohm, TO-220AB, Through Hole

SC11123

Power MOSFET, P Channel, 100 V, 6 A, 0.6 ohm, TO-220AB, Through Hole

VISHAY

The IRF9520PBF is a -100V P-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout...

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P Channel 100V 6A 40W TO-220AB 0.6ohm
2N2222A
2N2222A - Transistor, NPN, TO18

SC06714

Transistor, NPN, TO18

MULTICOMP PRO

Silicon planar NPN switching transistor for switching and linear application, DC and VHF amplifier applications. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers would...

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- - - 1.2W TO-18 -
ZVP3306A
ZVP3306A - Power MOSFET, P Channel, 60 V, 160 mA, 14 ohm, E-Line, Through Hole

SC06975

Power MOSFET, P Channel, 60 V, 160 mA, 14 ohm, E-Line, Through Hole

DIODES INC.

ZVP3306A is a P-channel enhancement mode vertical DMOS FET. • Drain-source voltage is -60V • Continuous drain current at Tamb=25°C is -160mA • Pulsed drain current is -1.6A • Gate-source voltage is ±20V • Power dissipation at Tamb=25°C is 625mW • Drain-sou...

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P Channel 60V 160mA 625mW E-Line 14ohm
IRF9Z24NPBF
IRF9Z24NPBF - Power MOSFET, P Channel, 55 V, 12 A, 0.175 ohm, TO-220AB, Through Hole

SC11122

Power MOSFET, P Channel, 55 V, 12 A, 0.175 ohm, TO-220AB, Through Hole

INFINEON

The IRF9Z24NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...

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P Channel 55V 12A 45W - 0.175ohm