Discrete Semiconductors

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Discrete Semiconductors


Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.

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  Manufacturer Part No Order Code Description / Manufacturer
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Quantity
Transistor Polarity Collector Emitter Voltage Max NPN Collector Emitter Voltage Max PNP Continuous Collector Current Base Input Resistor R1 Base Emitter Resistor R2 Transistor Case Style No. of Pins Transistor Mounting Power Dissipation Operating Temperature Max DC Current Gain hFE Min Product Range Qualification
 
 
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MMUN2216LT1G
MMUN2216LT1G - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 4.7 kohm

SC10967

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 4.7 kohm

ONSEMI

The MMUN2216LT1G is a NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...

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Single NPN 50V - 100mA 4.7kohm - SOT-23 3 Pin Surface Mount 400mW 150°C 160hFE - -
BAT54AFILM
BAT54AFILM - Small Signal Schottky Diode, Dual Common Anode, 30 V, 200 mA, 400 mV, 600 mA, 150 °C

SC11323

Small Signal Schottky Diode, Dual Common Anode, 30 V, 200 mA, 400 mV, 600 mA, 150 °C

STMICROELECTRONICS

The BAT54AFILM is a surface mount Small Signal Schottky Diode featuring extremely fast switching, low capacitance, low forward and reverse recovery times. • Low conduction and reverse losses • Negligible switching losses • ECOPACK®2 compliant component • 1...

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- - - - - - - - - - 150°C - BAT54 Series -
ZLLS500
ZLLS500 - Small Signal Schottky Diode, Single, 40 V, 700 mA, 1 V, 13 A, 150 °C

SC11291

Small Signal Schottky Diode, Single, 40 V, 700 mA, 1 V, 13 A, 150 °C

DIODES INC.

The ZLLS500 is a surface mount Schottky Barrier Diode encapsulated in a moulded plastic case. It has matte tin (lead-free plating) annealed over alloy 42 lead frame terminals. It offers users an excellent performance combination comprising high current ope...

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- - - - - - - - - - 150°C - - -
GBU604
GBU604 - Bridge Rectifier, Glass Passivated, Single Phase, 400 V, 6 A, SIP, 4 Pins, 1 V

SC09285

Bridge Rectifier, Glass Passivated, Single Phase, 400 V, 6 A, SIP, 4 Pins, 1 V

TAIWAN SEMICONDUCTOR

The GBU604 is a 4-pin single-phase glass passivated Standard Bridge Rectifier Diode with high surge current capability. It has matte tin-plated leads, solderable per JESD22-B102 terminals. • UL94V-0 Flammability rating • Ideal for printed circuit board • <...

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- - - - - - - - - - 150°C - GBU60x Series -
BC807-25
BC807-25 - Transistor, PNP, SOT23

SC06612

Transistor, PNP, SOT23

NXP

The BC807-25 is a PNP general purpose Transistor with 3 leads, high current and low voltage, plastic surface mount package. Designed for switching and amplification applications. • 150°C Junction temperature • 5pF Collector capacitance

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PNP - - 500mA - - SOT-23 - Surface Mount 250mW 150°C 160hFE BC807 -
ZHCS500
ZHCS500 - Small Signal Schottky Diode, Single, 40 V, 500 mA, 550 mV, 6.75 A, 125 °C

SC11288

Small Signal Schottky Diode, Single, 40 V, 500 mA, 550 mV, 6.75 A, 125 °C

DIODES INC.

The ZHCS500 is a surface mount Schottky Barrier Diode encapsulated in a moulded plastic case. It has matte tin (lead-free plating) annealed over alloy 42 lead frame terminals. It is used in DC-DC converter, PCMCIA and mobile telecommunication applications....

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- - - - - - - - - - 125°C - - -
VS-25RIA80
VS-25RIA80 - Thyristor, 25A, 800V, TO48

SC11504

Thyristor, 25A, 800V, TO48

VISHAY

The VS-25RIA80 is a 25A stud version medium power Phase Control Thyristor designed and qualified for industrial and consumer level. • Improved glass passivation for high reliability and exceptional stability at high temperature • High di/dt and dV/dt capab...

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- - - - - - - - - - 125°C - - -
BZV55-C24
BZV55-C24 - Zener Single Diode, 24 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

SC11227

Zener Single Diode, 24 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

NXP

The BZV55 series low-power voltage regulator Zener Diode designed in a small hermetically sealed glass SOD80C surface-mounted device (SMD) package. It is suitable for general regulation functions. • ≤40W Non-repetitive peak reverse power dissipation • 2.4 ...

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- - - - - - - - - 500mW 200°C - BZV55 -
BFS17PE6327HTSA1
BFS17PE6327HTSA1 - Bipolar - RF Transistor, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, SOT-23

SC11003

Bipolar - RF Transistor, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, SOT-23

INFINEON

The BFS 17P E6327 is a NPN Silicon RF Transistor for broadband amplifiers up to 1GHz at collector currents from 1 to 20mA. It is suitable for use with amplifier and oscillator applications in RF front-end.

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NPN - - 25mA - - SOT-23 - Surface Mount 280mW 150°C 70hFE - AEC-Q101
BYW56-TAP
BYW56-TAP - Standard Recovery Diode, 1 kV, 2 A, Single, 1 V, 4 µs, 50 A

SC11348

Standard Recovery Diode, 1 kV, 2 A, Single, 1 V, 4 µs, 50 A

VISHAY

The BYW56-TAP is a standard Avalanche Sinterglass Diode with plated axial leads terminals and colour band denotes cathode end polarity. Solderable terminals as per MIL-STD-750, method 2026 standard. Controlled avalanche characteristics and glass passivated...

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- - - - - - - - - - 175°C - BYW56 AEC-Q101
BAR43FILM
BAR43FILM - Schottky Rectifier, 30 V, 100 mA, Single, SOT-23, 3 Pins, 330 mV

SC11328

Schottky Rectifier, 30 V, 100 mA, Single, SOT-23, 3 Pins, 330 mV

STMICROELECTRONICS

The BAR43FILM is a surface-mount small signal general-purpose metal to silicon Schottky Diode features very low turn-ON voltage and fast switching. • Very small conduction losses • Negligible switching losses • Low forward voltage drop

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- - - - - - - - - - 150°C - BAR43 Series -
BAS21E6327HTSA1
BAS21E6327HTSA1 - Small Signal Diode, High Voltage, Single, 200 V, 250 mA, 1 V, 50 ns, 1 A

SC11243

Small Signal Diode, High Voltage, Single, 200 V, 250 mA, 1 V, 50 ns, 1 A

INFINEON

The BAS 21 E6327 is a silicon Switching Diode features high breakdown voltage. Suitable for high-speed switching applications. • 350mW Total power dissipation • 250V Breakdown voltage • 5pF Capacitance

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- - - - - - - - - - 150°C - BAS21 AEC-Q101
BAV199E6327HTSA1
BAV199E6327HTSA1 - Small Signal Diode, Dual Series, 85 V, 200 mA, 1.25 V, 1.5 µs, 4.5 A

SC11237

Small Signal Diode, Dual Series, 85 V, 200 mA, 1.25 V, 1.5 µs, 4.5 A

INFINEON

The BAV199 from Infineon is surface mount, dual Isolated, silicon low leakage diode in SOT-23 package. These diodes are featured with medium speed switching, applicable at low leakage and switching applications. • Automotive grade AEC-Q101 qualified • Maxi...

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- - - - - - - - - - 150°C - BAV199 Series AEC-Q101
BAT54CFILM
BAT54CFILM - Small Signal Schottky Diode, Dual Common Cathode, 30 V, 300 mA, 900 mV, 1 A, 150 °C

SC11318

Small Signal Schottky Diode, Dual Common Cathode, 30 V, 300 mA, 900 mV, 1 A, 150 °C

STMICROELECTRONICS

The BAT54CFILM is a 3-pin 40V surface-mount small signal Schottky Diode with dual common cathode configuration. It accepts low forward and reverse recovery times, low conduction and reverse losses and negligible switching losses. • Extremely fast switching...

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- - - - - - - - - - 150°C - BAT54 Series -
BC817K-40VL
BC817K-40VL - Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 350mW, TO-236AB, SMD

SC15928

Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 350mW, TO-236AB, SMD

NEXPERIA

• Transistor Polarity : NPN • Continuous Collector Current : 500mA • Transistor Case Style : TO-236AB • Transistor Mounting : Surface Mount • Power Dissipation : 350mW • Operating Temperature Max : 150°C • DC Current Gain hFE Min : 250hFE • Product Range : BC817K • Qualification : AEC-Q101

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NPN - - 500mA - - TO-236AB - Surface Mount 350mW 150°C 250hFE BC817K AEC-Q101
SR160
SR160 - Schottky Rectifier, 60 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 700 mV

SC15280

Schottky Rectifier, 60 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 700 mV

MULTICOMP PRO

SR160 is a Schottky rectifier designed for efficient power conversion. It features a 60V reverse voltage rating and a 1A forward current capacity, with a low forward voltage drop of 700mV. The rectifier comes in a DO-41 (DO-204AL) package with 2 pins, maki...

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- - - - - - - - - - 150°C - - -
IXFN80N50
IXFN80N50 - MOSFET Transistor, N Channel, 80A, 10V,

SC17017

MOSFET Transistor, N Channel, 80A, 10V,

IXYS SEMICONDUCTOR

The IXFN80N50 is a N-channel enhancement mode Power MOSFET features miniBLOC, with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated. • Fast intrinsic rectifier •...

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N Channel - - - - - ISOTOP - Module 780W 150°C - HiPerFET Series -
BC807-25LVL
BC807-25LVL - Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, TO-236AB, SMD

SC15933

Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, TO-236AB, SMD

NEXPERIA

• Transistor Polarity : PNP • Continuous Collector Current : 500mA • Transistor Case Style : TO-236AB • Transistor Mounting : Surface Mount • Power Dissipation : 250mW • Operating Temperature Max : 150°C • DC Current Gain hFE Min : 160hFE • Product Range : BC807L • Qualification : AEC-Q101

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PNP - - 500mA - - TO-236AB - Surface Mount 250mW 150°C 160hFE BC807L AEC-Q101
MAC97A6,412
MAC97A6,412 - 4Q Triac, 400V, 600mA, TO-92, 7mA, 2V, 5W

SC17081

4Q Triac, 400V, 600mA, TO-92, 7mA, 2V, 5W

WEEN SEMICONDUCTORS

The MAC97A6,412 is a planar passivated very sensitive gate 4-quadrant TRIAC for general purpose low power phase control and low power switching. • Direct Interfacing to Logic Level ICs • Direct Interfacing to Low Power Gate Drivers and Microcontrollers • H...

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- - - - - - - - - - 125°C - - -
RS1M+
RS1M+ - Standard Recovery Diode, 1 kV, 1 A, Single, 1.3 V, 500 ns, 30 A

SC15535

Standard Recovery Diode, 1 kV, 1 A, Single, 1.3 V, 500 ns, 30 A

MULTICOMP PRO

The RS1M is a Surface-mount Diode with moulded plastic case and pure tin-plated lead-free terminals. • Polarity is indicated by cathode band • Glass-passivated junction chip • Built-in strain-relief, ideal for automated placement • Fast switching for high ...

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- - - - - - - - - - 150°C - - -
BDV65BG
BDV65BG - Darlington Transistor, SOT93

SC06873

Darlington Transistor, SOT93

ONSEMI

The BDV65BG is a 100V Silicon NPN Bipolar Darlington Plastic Power Transistor that can be used as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emitter shunt resistor. ...

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NPN - - - - - - - Through Hole - 150°C - - -
FQU17P06
FQU17P06 - Power MOSFET, P Channel, 60 V, 12 A, 0.11 ohm, TO-251AA, Through Hole

SC11064

Power MOSFET, P Channel, 60 V, 12 A, 0.11 ohm, TO-251AA, Through Hole

ONSEMI

The FQU17P06 is a P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high...

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- - - - - - TO-251AA - Through Hole 79W 150°C - - -
BC860C
BC860C - Transistor, PNP SOT23

SC06603

Transistor, PNP SOT23

NXP

The BC860C is a PNP general purpose Transistor with 3 leads, low current and voltage, plastic surface mount package. Designed for low noise input stages of audio frequency equipment. • Complement to BC850

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PNP - - 100mA - - SOT-23 - Surface Mount 250mW 150°C 420hFE - -
FQP30N06
FQP30N06 - Power MOSFET, N Channel, 60 V, 30 A, 0.031 ohm, TO-220AB, Through Hole

SC16931

Power MOSFET, N Channel, 60 V, 30 A, 0.031 ohm, TO-220AB, Through Hole

ONSEMI

The FQP30N06 is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performanc...

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- - - - - - TO-220AB - Through Hole 79W 175°C - - -
2N4870.
2N4870. - Unijunction Transistor, 1.5A, 1µA, 5mA, TO-92

SC15371

Unijunction Transistor, 1.5A, 1µA, 5mA, TO-92

MULTICOMP PRO

The 2N4870 is a PN Unijunction Transistor designed for use in pulse and timing circuits, sensing circuits as well as thyristor trigger circuits. • Power dissipation(Pd = 300mW) • Multicomp products are rated 4.6 out of 5 stars • 12 month limited warranty *...

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- - - - - - TO-92 3 Pin - - 125°C - - -