Single MOSFET Transistors

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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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IPB072N15N3GATMA1
IPB072N15N3GATMA1 - Power MOSFET, N Channel, 150 V, 100 A, 0.0058 ohm, TO-263 (D2PAK), Surface Mount

SC16960

Power MOSFET, N Channel, 150 V, 100 A, 0.0058 ohm, TO-263 (D2PAK), Surface Mount

INFINEON

The IPB072N15N3 G is an OptiMOS™ 3 N-channel Power Transistor with low resistance, excellent switching performance, increased efficiency, excellent gate charge x R DS (ON) product (FOM) and smallest board-space consumption. • Environment-friendly • High po...

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N Channel 150V 100A 0.0058ohm TO-263 (D2PAK) Surface Mount 10V 3V 300W 3Pins 175°C - -
FQPF27P06
FQPF27P06 - Power MOSFET, P Channel, 60 V, 17 A, 0.07 ohm, TO-220F, Through Hole

SC16932

Power MOSFET, P Channel, 60 V, 17 A, 0.07 ohm, TO-220F, Through Hole

ONSEMI

The FQPF27P06 is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performa...

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P Channel 60V 17A 0.07ohm TO-220F Through Hole 10V 2V 47W 3Pins 175°C - -
BSS138NH6327XTSA2
BSS138NH6327XTSA2 - Power MOSFET, N Channel, 60V, 230mA, 2.2 Ohm, SOT-23, SMD

SC15994

Power MOSFET, N Channel, 60V, 230mA, 2.2 Ohm, SOT-23, SMD

INFINEON

• 60V, 0.23A, N-channel SIPMOS® small signal transistor in 3 pin SOT-23 package • Enhancement mode • Logic level • dv/dt rated • Qualified according to AEC Q101

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N Channel 60V 230mA 3.5ohm SOT-23 Surface Mount 10V 1V 360mW 3Pins 150°C - AEC-Q101
SI2312CDS-T1-GE3
SI2312CDS-T1-GE3 - Power MOSFET, N Channel, 20 V, 6 A, 0.0318 ohm, SOT-23, Surface Mount

SC16735

Power MOSFET, N Channel, 20 V, 6 A, 0.0318 ohm, SOT-23, Surface Mount

VISHAY

The SI2312CDS-T1-GE3 is a 20V N-channel TrenchFET® Power MOSFET. Suitable for DC to DC converters and load switch for portable applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been mod...

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N Channel 20V 6A 0.0318ohm SOT-23 Surface Mount 4.5V 450mV 1.25W 3Pins 150°C - -
SI2393DS-T1-GE3
SI2393DS-T1-GE3 - SMD P Channel Power MOSFET, 30V, 7.5A, 0.0189 Ohm, SOT-23

SC16883

SMD P Channel Power MOSFET, 30V, 7.5A, 0.0189 Ohm, SOT-23

VISHAY

• TrenchFET® Gen IV P channel power MOSFET • 100% Rg and UIS tested

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P Channel 30V 7.5A 0.0227ohm SOT-23 Surface Mount 10V 2.2V 2.5W 3Pins 150°C TrenchFET Gen IV -
TP0606N3-G
TP0606N3-G - P Channel Power MOSFET, Vertical DMOS FET, 60V, 320mA, 3 Ohm, TO-92

SC16919

P Channel Power MOSFET, Vertical DMOS FET, 60V, 320mA, 3 Ohm, TO-92

MICROCHIP

This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...

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P Channel 60V 320mA 3.5ohm TO-92 Through Hole 10V 2.4V 1W 3Pins 150°C - -
IRFZ24NPBF
IRFZ24NPBF - N Channel Power MOSFET, 55V, 17A, 0.07 Ohm, TO-220AB

SC16935

N Channel Power MOSFET, 55V, 17A, 0.07 Ohm, TO-220AB

INFINEON

Single N-channel HEXFET® power MOSFET. • Advanced process technology • Dynamic dv/dt rating • Fast switching • Fully avalanche rated • Planar cell structure for wide SOA • Product qualification according to JEDEC standard • High-current rating • Increased ...

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N Channel 55V 17A 0.07ohm TO-220AB Through Hole 10V 4V 45W 3Pins 175°C - -
DMG2305UX-13
DMG2305UX-13 - Power MOSFET, P Channel, 20V, 4.2A, 0.04 Ohm, SOT-23, SMD

SC16744

Power MOSFET, P Channel, 20V, 4.2A, 0.04 Ohm, SOT-23, SMD

DIODES INC.

DMG2305UX-13 is a P-channel enhancement mode MOSFET in a 3 pin SOT23 package. This MOSFET is designed to minimize on-state resistance (RDS(on)), yet maintain superior switching performance, making it ideal for high efficiency power management applications....

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P Channel 20V 4.2A 0.052ohm SOT-23 Surface Mount 4.5V 900mV 1.4W 3Pins 150°C - -
IRFB4110PBF
IRFB4110PBF - Power MOSFET, N Channel, 100 V, 180 A, 0.0045 ohm, TO-220AB, Through Hole

SC16958

Power MOSFET, N Channel, 100 V, 180 A, 0.0045 ohm, TO-220AB, Through Hole

INFINEON

The IRFB4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...

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N Channel 100V 180A 0.0045ohm TO-220AB Through Hole 10V 4V 370W 3Pins 175°C - -
STW4N150
STW4N150 - Power MOSFET, N Channel, 1.5kV, 4A, 7 ohm, TO-247,

SC15828

Power MOSFET, N Channel, 1.5kV, 4A, 7 ohm, TO-247,

STMICROELECTRONICS

The STW4N150 is a 1500V N-channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY™ process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate cha...

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N Channel 1.5kV 4A 7ohm TO-247 Through Hole 10V 4V 160W 3Pins 150°C - -
DMP6023LE-13
DMP6023LE-13 - Power MOSFET, P Channel, 60V, 18.2A, 0.028 Ohm, SOT-223, SMD

SC15971

Power MOSFET, P Channel, 60V, 18.2A, 0.028 Ohm, SOT-223, SMD

DIODES INC.

DMP6023LE-13 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications ...

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P Channel 60V 18.2A 0.028ohm SOT-223 Surface Mount 10V 3V 17.3W 4Pins 150°C - -
SI2301CDS-T1-GE3
SI2301CDS-T1-GE3 - Power MOSFET, P Channel, 20 V, 3.1 A, 0.112 ohm, SOT-23, Surface Mount

SC16862

Power MOSFET, P Channel, 20 V, 3.1 A, 0.112 ohm, SOT-23, Surface Mount

VISHAY

The SI2301CDS-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications. • Halogen-free • -55 to 150°C Operating temperature range

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P Channel 20V 3.1A 0.112ohm SOT-23 Surface Mount 4.5V 400mV 1.6W 3Pins 150°C - -
FDN352AP
FDN352AP - Power MOSFET, P Channel, 30 V, 1.3 A, 0.18 ohm, SuperSOT, Surface Mount

SC16755

Power MOSFET, P Channel, 30 V, 1.3 A, 0.18 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN352AP is a P-channel Logic Level MOSFET produced using advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. This device is well suit...

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P Channel 30V 1.3A 0.18ohm SuperSOT Surface Mount 10V 2V 500mW 3Pins 150°C - -
BSN20BKR
BSN20BKR - Power MOSFET, Trench, N Channel, 60V, 265mA, 2.1 Ohm, SOT-23, SMD

SC16765

Power MOSFET, Trench, N Channel, 60V, 265mA, 2.1 Ohm, SOT-23, SMD

NEXPERIA

The BSN20BK from Nexperia is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for relay drivers, high speed line drivers, low-side...

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N Channel 60V 265mA 2.8ohm SOT-23 Surface Mount 10V 1V 310mW 3Pins 150°C - -
2N7002K-7
2N7002K-7 - Power MOSFET, N Channel, 60V, 300mA, 2 Ohm, SOT-23, SMD

SC15985

Power MOSFET, N Channel, 60V, 300mA, 2 Ohm, SOT-23, SMD

DIODES INC.

The 2N7002K-7 is an N-channel Enhancement Mode MOSFET designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It features molded green plasti...

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N Channel 60V 380mA 2ohm SOT-23 Surface Mount 10V 1.6V 370mW 3Pins 150°C - -
BSS138LT3G
BSS138LT3G - Power MOSFET, N Channel, 50V, 200mA, 5.6 Ohm, SOT-23, SMD

SC15999

Power MOSFET, N Channel, 50V, 200mA, 5.6 Ohm, SOT-23, SMD

ONSEMI

The BSS138LT3G is a N-channel Power MOSFET with low threshold voltage and ideal for low voltage applications. Miniature surface mount package saves board space. • ±20VDC Continuous gate-to-source voltage • 556°C/W Junction-to-ambient thermal resistance

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N Channel 50V 200mA 3.5ohm SOT-23 Surface Mount 2.75V 500mV 225mW 3Pins 150°C - -
FDS9435A
FDS9435A - Power MOSFET, P Channel, 30 V, 5.3 A, 0.05 ohm, SOIC, Surface Mount

SC16915

Power MOSFET, P Channel, 30 V, 5.3 A, 0.05 ohm, SOIC, Surface Mount

ONSEMI

The FDS9435A is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The medium voltage power MOSFET is optimized power switches combining s...

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P Channel 30V 5.3A 0.05ohm SOIC Surface Mount 10V 1.7V 2.5W 8Pins 175°C - -
SUM110P04-05-E3
SUM110P04-05-E3 - Power MOSFET, P Channel, 40 V, 110 A, 0.005 ohm, TO-263 (D2PAK), Surface Mount

SC16869

Power MOSFET, P Channel, 40 V, 110 A, 0.005 ohm, TO-263 (D2PAK), Surface Mount

VISHAY

The SUM110P04-05-E3 is a -40V P-channel TrenchFET® Power MOSFET.

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P Channel 40V 110A 0.005ohm TO-263 (D2PAK) Surface Mount 10V 3V 375W 3Pins 175°C - -
ZXMN6A07FTA
ZXMN6A07FTA - Power MOSFET, N Channel, 60 V, 1.4 A, 0.25 ohm, SOT-23, Surface Mount

SC16749

Power MOSFET, N Channel, 60 V, 1.4 A, 0.25 ohm, SOT-23, Surface Mount

DIODES INC.

ZXMN6A07FTA is a N-channel enhancement mode MOSFET. This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with a fast switching speed, making it ideal for high-efficiency power-management applications. Typical applications...

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N Channel 60V 1.4A 0.25ohm SOT-23 Surface Mount 10V 3V 806mW 3Pins 150°C - -
BSS84W-7-F
BSS84W-7-F - Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-323, Surface Mount

SC16773

Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-323, Surface Mount

DIODES INC.

The BSS84W-7-F is a P-channel enhancement-mode FET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain supe...

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P Channel 50V 130mA 10ohm SOT-323 Surface Mount 5V 1.6V 200mW 3Pins 150°C - -
STW45NM50
STW45NM50 - Power MOSFET, N Channel, 550V, 45A, 0.1 ohm, TO-247,

SC15829

Power MOSFET, N Channel, 550V, 45A, 0.1 ohm, TO-247,

STMICROELECTRONICS

The STW45NM50 is a 550V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent ava...

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N Channel 550V 45A 0.1ohm TO-247 Through Hole 10V 4V 417W 3Pins 150°C - -
SI4447ADY-T1-GE3
SI4447ADY-T1-GE3 - Power MOSFET, P Channel, 40 V, 7.2 A, 0.045 ohm, SOIC, Surface Mount

SC16775

Power MOSFET, P Channel, 40 V, 7.2 A, 0.045 ohm, SOIC, Surface Mount

VISHAY

• 40V, 7.2A, P-channel TrenchFET® power MOSFET in 8 pin SOIC package • 100% Rg tested • 100 % UIS tested • Suitable for load switches, adaptor switch and notebook PCs

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P Channel 40V 7.2A 0.045ohm SOIC Surface Mount 10V 1.2V 4.2W 8Pins 150°C - -
NDS332P
NDS332P - Power MOSFET, P Channel, 20 V, 1 A, 0.3 ohm, SuperSOT, Surface Mount

SC16872

Power MOSFET, P Channel, 20 V, 1 A, 0.3 ohm, SuperSOT, Surface Mount

ONSEMI

The NDS332P is a P-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage application...

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P Channel 20V 1A 0.3ohm SuperSOT Surface Mount 4.5V 600mV 500mW 3Pins 150°C - -
IRLML5103TRPBF
IRLML5103TRPBF - Power MOSFET, P Channel, 30 V, 600 mA, 0.6 ohm, µSOIC, Surface Mount

SC16784

Power MOSFET, P Channel, 30 V, 600 mA, 0.6 ohm, µSOIC, Surface Mount

INFINEON

The IRLML5103TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an ext...

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P Channel 30V 600mA 0.6ohm µSOIC Surface Mount 10V 1V 540mW 3Pins 150°C - -
TN0702N3-G
TN0702N3-G - N Channel Power MOSFET, 20V, 530mA, 1 Ohm, TO-92

SC17007

N Channel Power MOSFET, 20V, 530mA, 1 Ohm, TO-92

MICROCHIP

This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...

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N Channel 20V 530mA 1.3ohm TO-92 Through Hole 5V 1V 1W 3Pins 150°C - -