MOSFET Transistors

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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance
 
 
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SI4463CDY-T1-GE3
SI4463CDY-T1-GE3 - Power MOSFET, P Channel, 20 V, 18.6 A, 0.008 ohm, SOIC, Surface Mount

SC21596

Power MOSFET, P Channel, 20 V, 18.6 A, 0.008 ohm, SOIC, Surface Mount

VISHAY

The SI4463CDY-T1-GE3 is a 2.5VGS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for adaptor switch, high current load switch and notebook applications. • 100% Rg tested • 100% UIS tested • Halogen-free • -55 to 150°C Operating temperature rang...

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P Channel 20V 18.6A 0.008ohm
BSC009NE2LS5IATMA1
BSC009NE2LS5IATMA1 - Power MOSFET, N Channel, 25 V, 100 A, 950 µohm, TDSON, Surface Mount

SC21338

Power MOSFET, N Channel, 25 V, 100 A, 950 µohm, TDSON, Surface Mount

INFINEON

• Channel Type : N Channel • Drain Source Voltage Vds : 25V • Continuous Drain Current Id : 100A • Drain Source On State Resistance : 950µohm

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N Channel 25V 100A 950µohm
DMP3099L-7
DMP3099L-7 - Power MOSFET, P Channel, 30 V, 3.8 A, 0.065 ohm, SOT-23, Surface Mount

SC21313

Power MOSFET, P Channel, 30 V, 3.8 A, 0.065 ohm, SOT-23, Surface Mount

DIODES INC.

DMP3099L-7 is a P-channel enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applicati...

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P Channel 30V 3.8A 0.065ohm
SI7113DN-T1-GE3
SI7113DN-T1-GE3 - Power MOSFET, P Channel, 100 V, 13.2 A, 0.134 ohm, PowerPAK 1212, Surface Mount

SC21597

Power MOSFET, P Channel, 100 V, 13.2 A, 0.134 ohm, PowerPAK 1212, Surface Mount

VISHAY

• P-channel 100V (D-S) TrenchFET® power MOSFET • Low thermal resistance PowerPAK® package with Low 1.07mm profile • UIS and Rg tested • Suitable for active clamp in intermediate DC/DC power supplies

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P Channel 100V 13.2A 0.134ohm
IPD90P04P405ATMA2
IPD90P04P405ATMA2 - Power Mosfet Transistor, P Channel, 40V, 90A, TO-252 (DPAK), SMD

SC20574

Power Mosfet Transistor, P Channel, 40V, 90A, TO-252 (DPAK), SMD

INFINEON

IPD90P04P405ATMA2 is a OptiMOS®-P2 power-transistor in a 3 pin TO-252 package. • Continuous drain current is -90A • Power dissipation is 125W • P-channel - normal level - enhancement mode • AEC qualified • 175°C operating temperature • 100% avalanche teste...

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P Channel 40V 90A 0.0047ohm
2N7002E-7-F
2N7002E-7-F - Power MOSFET, N Channel, 60 V, 250 mA, 3 ohm, SOT-23, Surface Mount

SC21289

Power MOSFET, N Channel, 60 V, 250 mA, 3 ohm, SOT-23, Surface Mount

DIODES INC.

• Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 250mA • Drain Source On State Resistance : 3ohm

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N Channel 60V 250mA 3ohm
STD20NF06LT4
STD20NF06LT4 - Power MOSFET, N Channel, 60 V, 24 A, 0.04 ohm, TO-252 (DPAK), Surface Mount

SC21521

Power MOSFET, N Channel, 60 V, 24 A, 0.04 ohm, TO-252 (DPAK), Surface Mount

STMICROELECTRONICS

The STD20NF06LT4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less cri...

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N Channel 60V 24A 0.04ohm
SI7145DP-T1-GE3
SI7145DP-T1-GE3 - Power MOSFET, P Channel, 30 V, 60 A, 0.0026 ohm, PowerPAK SO, Surface Mount

SC21598

Power MOSFET, P Channel, 30 V, 60 A, 0.0026 ohm, PowerPAK SO, Surface Mount

VISHAY

• Channel Type : P Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 60A • Drain Source On State Resistance : 0.0026ohm

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P Channel 30V 60A 0.0026ohm
IRF540NSTRLPBF
IRF540NSTRLPBF - Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-263 (D2PAK), Surface Mount

SC21341

Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-263 (D2PAK), Surface Mount

INFINEON

The IRF540NSTRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an ext...

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N Channel 100V 33A 0.044ohm
SQ2389ES-T1_GE3
SQ2389ES-T1_GE3 - Power MOSFET, P Channel, 40 V, 4.1 A, 0.094 ohm, SOT-23, Surface Mount

SC21607

Power MOSFET, P Channel, 40 V, 4.1 A, 0.094 ohm, SOT-23, Surface Mount

VISHAY

• Channel Type : P Channel • Drain Source Voltage Vds : 40V • Continuous Drain Current Id : 4.1A • Drain Source On State Resistance : 0.094ohm

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P Channel 40V 4.1A 0.094ohm
DMN62D0U-7
DMN62D0U-7 - Power MOSFET, N Channel, 60 V, 380 mA, 2 ohm, SOT-23, Surface Mount

SC21310

Power MOSFET, N Channel, 60 V, 380 mA, 2 ohm, SOT-23, Surface Mount

DIODES INC.

DMN62D0U-7 is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications in...

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N Channel 60V 380mA 2ohm
NX7002BKMYL
NX7002BKMYL - Power MOSFET, N Channel, 60 V, 350 mA, 2.8 ohm, SOT-883, Surface Mount

SC21425

Power MOSFET, N Channel, 60 V, 350 mA, 2.8 ohm, SOT-883, Surface Mount

NEXPERIA

• Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 350mA • Drain Source On State Resistance : 2.8ohm

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N Channel 60V 350mA 2.8ohm
SQ2364EES-T1_GE3
SQ2364EES-T1_GE3 - Power MOSFET, N Channel, 60 V, 2 A, 0.24 ohm, SOT-23, Surface Mount

SC21606

Power MOSFET, N Channel, 60 V, 2 A, 0.24 ohm, SOT-23, Surface Mount

VISHAY

New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...

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N Channel 60V 2A 0.24ohm
2N7002BKW,115
2N7002BKW,115 - Power MOSFET, N Channel, 60 V, 310 mA, 1.6 ohm, SOT-323, Surface Mount

SC21405

Power MOSFET, N Channel, 60 V, 310 mA, 1.6 ohm, SOT-323, Surface Mount

NEXPERIA

The 2N7002BKW is a N-channel enhancement-mode MOSFET designed in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuits. • Logic-leve...

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N Channel 60V 310mA 1.6ohm
SI3456DDV-T1-GE3
SI3456DDV-T1-GE3 - Power MOSFET, N Channel, 30 V, 6.3 A, 0.04 ohm, TSOP, Surface Mount

SC21595

Power MOSFET, N Channel, 30 V, 6.3 A, 0.04 ohm, TSOP, Surface Mount

VISHAY

The SI3456DDV-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch, HDD and DC-to-DC converter applications. • Halogen-free • -55 to 150°C Operating temperature range

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N Channel 30V 6.3A 0.04ohm
BSS8402DW-7-F
BSS8402DW-7-F - Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 115 mA, 115 mA, 13.5 Ohm

SC21301

Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 115 mA, 115 mA, 13.5 Ohm

DIODES INC.

BSS8402DW-7-F is a complementary pair enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and maintains superior switching performance, making it ideal for high efficiency power management applications. Typi...

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Complementary N and P Channel - - -
IXFN80N50
IXFN80N50 - MOSFET Transistor, N Channel, 80A, 10V,

SC17017

MOSFET Transistor, N Channel, 80A, 10V,

IXYS SEMICONDUCTOR

The IXFN80N50 is a N-channel enhancement mode Power MOSFET features miniBLOC, with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated. • Fast intrinsic rectifier •...

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N Channel 500V 80A 0.055ohm
STP16NF06L..
STP16NF06L.. - Power MOSFET, N Channel, 60 V, 16 A, 0.07 ohm, TO-220, Through Hole

SC11129

Power MOSFET, N Channel, 60 V, 16 A, 0.07 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP16NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET is the latest development of STMicroelectronis unique Single Feature Size strip based process, it has high packing density...

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N Channel 60V 16A 0.07ohm
FQU17P06
FQU17P06 - Power MOSFET, P Channel, 60 V, 12 A, 0.11 ohm, TO-251AA, Through Hole

SC11064

Power MOSFET, P Channel, 60 V, 12 A, 0.11 ohm, TO-251AA, Through Hole

ONSEMI

The FQU17P06 is a P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high...

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P Channel 60V 12A 0.11ohm
BSS138PW,115
BSS138PW,115 - Power MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-323, SMD

SC16000

Power MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-323, SMD

NEXPERIA

The BSS138PW is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic Level Compatible • Very Fast Switching • ESD Protection Upto 1.5kV • AEC-Q101 Qualified

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N Channel 60V 320mA 1.6ohm
IRF9540NPBF
IRF9540NPBF - Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole

SC08221

Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole

INFINEON

The IRF9540NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to ...

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P Channel 100V 23A 0.117ohm
SPW17N80C3
SPW17N80C3 - Power MOSFET, N Channel, 800 V, 17 A, 0.29 ohm, TO-247, Through Hole

SC11162

Power MOSFET, N Channel, 800 V, 17 A, 0.29 ohm, TO-247, Through Hole

INFINEON

The SPW17N80C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, extreme dv/dt rated and periodic avalanche rated. • ±20V Gate-source voltage • 260°C Soldering temperature

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N Channel 800V 17A 0.29ohm
VN10LP
VN10LP - Power MOSFET, N Channel, 60 V, 270 mA, 5 ohm, TO-226AA, Through Hole

SC06959

Power MOSFET, N Channel, 60 V, 270 mA, 5 ohm, TO-226AA, Through Hole

DIODES INC.

The VN10LP is a N-channel enhancement mode Vertical DMOS FET with matte tin-plated terminals and level-1 per J-STD-020 moisture sensitivity. • AEC-Q101 Qualified • UL94V-0 Flammability rating • Green product

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N Channel 60V 270mA 5ohm
IRFP4568PBF
IRFP4568PBF - Power MOSFET, N Channel, 150 V, 171 A, 0.0059 ohm, TO-247AC, Through Hole

SC11170

Power MOSFET, N Channel, 150 V, 171 A, 0.0059 ohm, TO-247AC, Through Hole

INFINEON

The IRFP4568PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...

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N Channel 150V 171A 0.0059ohm
IRF1404PBF
IRF1404PBF - Power MOSFET, N Channel, 40 V, 162 A, 0.004 ohm, TO-220AB, Through Hole

SC11147

Power MOSFET, N Channel, 40 V, 162 A, 0.004 ohm, TO-220AB, Through Hole

INFINEON

The IRF1404PBF is a 40V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated • ...

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N Channel 40V 162A 0.004ohm