MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI4463CDY-T1-GE3
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SC21596 |
Power MOSFET, P Channel, 20 V, 18.6 A, 0.008 ohm, SOIC, Surface Mount VISHAY The SI4463CDY-T1-GE3 is a 2.5VGS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for adaptor switch, high current load switch and notebook applications. • 100% Rg tested • 100% UIS tested • Halogen-free • -55 to 150°C Operating temperature rang...
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P Channel | 20V | 18.6A | 0.008ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC009NE2LS5IATMA1
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SC21338 |
Power MOSFET, N Channel, 25 V, 100 A, 950 µohm, TDSON, Surface Mount INFINEON • Channel Type : N Channel • Drain Source Voltage Vds : 25V • Continuous Drain Current Id : 100A • Drain Source On State Resistance : 950µohm
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N Channel | 25V | 100A | 950µohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMP3099L-7
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SC21313 |
Power MOSFET, P Channel, 30 V, 3.8 A, 0.065 ohm, SOT-23, Surface Mount DIODES INC. DMP3099L-7 is a P-channel enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applicati...
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P Channel | 30V | 3.8A | 0.065ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7113DN-T1-GE3
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SC21597 |
Power MOSFET, P Channel, 100 V, 13.2 A, 0.134 ohm, PowerPAK 1212, Surface Mount VISHAY • P-channel 100V (D-S) TrenchFET® power MOSFET • Low thermal resistance PowerPAK® package with Low 1.07mm profile • UIS and Rg tested • Suitable for active clamp in intermediate DC/DC power supplies
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P Channel | 100V | 13.2A | 0.134ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD90P04P405ATMA2
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SC20574 |
Power Mosfet Transistor, P Channel, 40V, 90A, TO-252 (DPAK), SMD INFINEON IPD90P04P405ATMA2 is a OptiMOS®-P2 power-transistor in a 3 pin TO-252 package. • Continuous drain current is -90A • Power dissipation is 125W • P-channel - normal level - enhancement mode • AEC qualified • 175°C operating temperature • 100% avalanche teste...
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P Channel | 40V | 90A | 0.0047ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002E-7-F
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SC21289 |
Power MOSFET, N Channel, 60 V, 250 mA, 3 ohm, SOT-23, Surface Mount DIODES INC. • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 250mA • Drain Source On State Resistance : 3ohm
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N Channel | 60V | 250mA | 3ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STD20NF06LT4
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SC21521 |
Power MOSFET, N Channel, 60 V, 24 A, 0.04 ohm, TO-252 (DPAK), Surface Mount STMICROELECTRONICS The STD20NF06LT4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less cri...
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N Channel | 60V | 24A | 0.04ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI7145DP-T1-GE3
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SC21598 |
Power MOSFET, P Channel, 30 V, 60 A, 0.0026 ohm, PowerPAK SO, Surface Mount VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 60A • Drain Source On State Resistance : 0.0026ohm
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P Channel | 30V | 60A | 0.0026ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF540NSTRLPBF
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SC21341 |
Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-263 (D2PAK), Surface Mount INFINEON The IRF540NSTRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an ext...
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N Channel | 100V | 33A | 0.044ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQ2389ES-T1_GE3
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SC21607 |
Power MOSFET, P Channel, 40 V, 4.1 A, 0.094 ohm, SOT-23, Surface Mount VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 40V • Continuous Drain Current Id : 4.1A • Drain Source On State Resistance : 0.094ohm
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P Channel | 40V | 4.1A | 0.094ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMN62D0U-7
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SC21310 |
Power MOSFET, N Channel, 60 V, 380 mA, 2 ohm, SOT-23, Surface Mount DIODES INC. DMN62D0U-7 is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications in...
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N Channel | 60V | 380mA | 2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX7002BKMYL
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SC21425 |
Power MOSFET, N Channel, 60 V, 350 mA, 2.8 ohm, SOT-883, Surface Mount NEXPERIA • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 350mA • Drain Source On State Resistance : 2.8ohm
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N Channel | 60V | 350mA | 2.8ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQ2364EES-T1_GE3
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SC21606 |
Power MOSFET, N Channel, 60 V, 2 A, 0.24 ohm, SOT-23, Surface Mount VISHAY New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...
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N Channel | 60V | 2A | 0.24ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002BKW,115
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SC21405 |
Power MOSFET, N Channel, 60 V, 310 mA, 1.6 ohm, SOT-323, Surface Mount NEXPERIA The 2N7002BKW is a N-channel enhancement-mode MOSFET designed in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuits. • Logic-leve...
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N Channel | 60V | 310mA | 1.6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI3456DDV-T1-GE3
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SC21595 |
Power MOSFET, N Channel, 30 V, 6.3 A, 0.04 ohm, TSOP, Surface Mount VISHAY The SI3456DDV-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch, HDD and DC-to-DC converter applications. • Halogen-free • -55 to 150°C Operating temperature range
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N Channel | 30V | 6.3A | 0.04ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS8402DW-7-F
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SC21301 |
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 115 mA, 115 mA, 13.5 Ohm DIODES INC. BSS8402DW-7-F is a complementary pair enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and maintains superior switching performance, making it ideal for high efficiency power management applications. Typi...
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Complementary N and P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXFN80N50
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SC17017 |
MOSFET Transistor, N Channel, 80A, 10V, IXYS SEMICONDUCTOR The IXFN80N50 is a N-channel enhancement mode Power MOSFET features miniBLOC, with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated. • Fast intrinsic rectifier •...
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N Channel | 500V | 80A | 0.055ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP16NF06L..
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SC11129 |
Power MOSFET, N Channel, 60 V, 16 A, 0.07 ohm, TO-220, Through Hole STMICROELECTRONICS The STP16NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET is the latest development of STMicroelectronis unique Single Feature Size strip based process, it has high packing density...
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N Channel | 60V | 16A | 0.07ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQU17P06
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SC11064 |
Power MOSFET, P Channel, 60 V, 12 A, 0.11 ohm, TO-251AA, Through Hole ONSEMI The FQU17P06 is a P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high...
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P Channel | 60V | 12A | 0.11ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138PW,115
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SC16000 |
Power MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-323, SMD NEXPERIA The BSS138PW is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic Level Compatible • Very Fast Switching • ESD Protection Upto 1.5kV • AEC-Q101 Qualified
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N Channel | 60V | 320mA | 1.6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9540NPBF
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SC08221 |
Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole INFINEON The IRF9540NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to ...
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P Channel | 100V | 23A | 0.117ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPW17N80C3
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SC11162 |
Power MOSFET, N Channel, 800 V, 17 A, 0.29 ohm, TO-247, Through Hole INFINEON The SPW17N80C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, extreme dv/dt rated and periodic avalanche rated. • ±20V Gate-source voltage • 260°C Soldering temperature
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N Channel | 800V | 17A | 0.29ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VN10LP
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SC06959 |
Power MOSFET, N Channel, 60 V, 270 mA, 5 ohm, TO-226AA, Through Hole DIODES INC. The VN10LP is a N-channel enhancement mode Vertical DMOS FET with matte tin-plated terminals and level-1 per J-STD-020 moisture sensitivity. • AEC-Q101 Qualified • UL94V-0 Flammability rating • Green product
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N Channel | 60V | 270mA | 5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP4568PBF
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SC11170 |
Power MOSFET, N Channel, 150 V, 171 A, 0.0059 ohm, TO-247AC, Through Hole INFINEON The IRFP4568PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...
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N Channel | 150V | 171A | 0.0059ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF1404PBF
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SC11147 |
Power MOSFET, N Channel, 40 V, 162 A, 0.004 ohm, TO-220AB, Through Hole INFINEON The IRF1404PBF is a 40V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated • ...
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N Channel | 40V | 162A | 0.004ohm |