MOSFET Transistors

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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance
 
 
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DMP3099L-7
DMP3099L-7 - Power MOSFET, P Channel, 30 V, 3.8 A, 0.065 ohm, SOT-23, Surface Mount

SC21313

 
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Power MOSFET, P Channel, 30 V, 3.8 A, 0.065 ohm, SOT-23, Surface Mount

DIODES INC.

DMP3099L-7 is a P-channel enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applicati...

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P Channel 30V 3.8A 0.065ohm
SI7113DN-T1-GE3
SI7113DN-T1-GE3 - Power MOSFET, P Channel, 100 V, 13.2 A, 0.119 ohm, PowerPAK 1212, Surface Mount

SC21597

 
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Power MOSFET, P Channel, 100 V, 13.2 A, 0.119 ohm, PowerPAK 1212, Surface Mount

VISHAY

• P-channel 100V (D-S) TrenchFET® power MOSFET • Low thermal resistance PowerPAK® package with Low 1.07mm profile • UIS and Rg tested • Suitable for active clamp in intermediate DC/DC power supplies

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P Channel 100V 13.2A 0.119ohm
SI3456DDV-T1-GE3
SI3456DDV-T1-GE3 - Power MOSFET, N Channel, 30 V, 6.3 A, 0.033 ohm, TSOP, Surface Mount

SC21595

 
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Power MOSFET, N Channel, 30 V, 6.3 A, 0.033 ohm, TSOP, Surface Mount

VISHAY

The SI3456DDV-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch, HDD and DC-to-DC converter applications. • Halogen-free • -55 to 150°C Operating temperature range

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N Channel 30V 6.3A 0.033ohm
NDS0610
NDS0610 - Power MOSFET, P Channel, 60 V, 120 mA, 10 ohm, SOT-23, Surface Mount

SC21483

 
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Power MOSFET, P Channel, 60 V, 120 mA, 10 ohm, SOT-23, Surface Mount

ONSEMI

The NDS0610 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. They can be used...

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P Channel 60V 120mA 10ohm
SQ2364EES-T1_GE3
SQ2364EES-T1_GE3 - Power MOSFET, N Channel, 60 V, 2 A, 0.19 ohm, SOT-23, Surface Mount

SC21606

 
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Power MOSFET, N Channel, 60 V, 2 A, 0.19 ohm, SOT-23, Surface Mount

VISHAY

New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...

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N Channel 60V 2A 0.19ohm
2N7002BKW,115
2N7002BKW,115 - Power MOSFET, N Channel, 60 V, 310 mA, 1 ohm, SOT-323, Surface Mount

SC21405

 
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Power MOSFET, N Channel, 60 V, 310 mA, 1 ohm, SOT-323, Surface Mount

NEXPERIA

The 2N7002BKW is a N-channel enhancement-mode MOSFET designed in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuits. • Logic-leve...

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N Channel 60V 310mA 1ohm
FDT86256
FDT86256 - Power MOSFET, N Channel, 150 V, 3 A, 0.695 ohm, SOT-223, Surface Mount

SC21477

 
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Power MOSFET, N Channel, 150 V, 3 A, 0.695 ohm, SOT-223, Surface Mount

ONSEMI

• Channel Type : N Channel • Drain Source Voltage Vds : 150V • Continuous Drain Current Id : 3A • Drain Source On State Resistance : 0.695ohm

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N Channel 150V 3A 0.695ohm
BSS816NWH6327XTSA1
BSS816NWH6327XTSA1 - Power MOSFET, N Channel, 20 V, 1.4 A, 0.107 ohm, SOT-323, Surface Mount

SC21340

 
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Power MOSFET, N Channel, 20 V, 1.4 A, 0.107 ohm, SOT-323, Surface Mount

INFINEON

• N-channel Optima's™-2 small signal transistor • Enhancement mode • Ultra-logic level (1.8V rated) • Avalanche rated • Qualified according to AEC Q101

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N Channel 20V 1.4A 0.107ohm
NX7002BKMYL
NX7002BKMYL - Power MOSFET, N Channel, 60 V, 350 mA, 2.2 ohm, SOT-883, Surface Mount

SC21425

 
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Power MOSFET, N Channel, 60 V, 350 mA, 2.2 ohm, SOT-883, Surface Mount

NEXPERIA

• Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 350mA • Drain Source On State Resistance : 2.2ohm

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N Channel 60V 350mA 2.2ohm
PMV30UN2R
PMV30UN2R - Power MOSFET, N Channel, 20 V, 5.4 A, 0.024 ohm, SOT-23, Surface Mount

SC21452

 
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RoHS

Power MOSFET, N Channel, 20 V, 5.4 A, 0.024 ohm, SOT-23, Surface Mount

NEXPERIA

The PMV30UN2 is a N-channel enhancement mode Field-effect Transistor (FET) in a small surface-mounted device (SMD) plastic package using Trench MOSFET technology. Enhanced power dissipation capability of 1000mW. • Low threshold voltage • Very fast switchin...

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N Channel 20V 5.4A 0.024ohm
IXFN80N50
IXFN80N50 - MOSFET Transistor, N Channel, 80A, 10V,

SC17017

MOSFET Transistor, N Channel, 80A, 10V,

IXYS SEMICONDUCTOR

The IXFN80N50 is a N-channel enhancement mode Power MOSFET features miniBLOC, with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated. • Fast intrinsic rectifier •...

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N Channel 500V 80A 0.055ohm
FQU17P06
FQU17P06 - Power MOSFET, P Channel, 60 V, 12 A, 0.11 ohm, TO-251AA, Through Hole

SC11064

Power MOSFET, P Channel, 60 V, 12 A, 0.11 ohm, TO-251AA, Through Hole

ONSEMI

The FQU17P06 is a P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high...

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P Channel 60V 12A 0.11ohm
FQP30N06
FQP30N06 - Power MOSFET, N Channel, 60 V, 30 A, 0.031 ohm, TO-220AB, Through Hole

SC16931

Power MOSFET, N Channel, 60 V, 30 A, 0.031 ohm, TO-220AB, Through Hole

ONSEMI

The FQP30N06 is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performanc...

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N Channel 60V 30A 0.031ohm
IRF2804PBF
IRF2804PBF - Power MOSFET, N Channel, 40 V, 280 A, 0.0023 ohm, TO-220AB, Through Hole

SC08252

Power MOSFET, N Channel, 40 V, 280 A, 0.0023 ohm, TO-220AB, Through Hole

INFINEON

The IRF2804PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed...

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N Channel 40V 280A 0.0023ohm
IRFP240PBF
IRFP240PBF - Power MOSFET, N Channel, 200 V, 20 A, 0.18 ohm, TO-247AC, Through Hole

SC10643

Power MOSFET, N Channel, 200 V, 20 A, 0.18 ohm, TO-247AC, Through Hole

VISHAY

The IRFP240PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...

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N Channel 200V 20A 0.18ohm
SPW20N60C3FKSA1
SPW20N60C3FKSA1 - Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-247, Through Hole

SC16942

Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-247, Through Hole

INFINEON

The SPW20N60C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, periodic avalanche rated, extremely dv/dt rated and qualified according to JEDEC for target applications. • High peak current capability •...

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N Channel 650V 20.7A 0.19ohm
BSS138PW,115
BSS138PW,115 - Power MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-323, SMD

SC16000

Power MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-323, SMD

NEXPERIA

The BSS138PW is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic Level Compatible • Very Fast Switching • ESD Protection Upto 1.5kV • AEC-Q101 Qualified

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N Channel 60V 320mA 0.9ohm
IRFP4568PBF
IRFP4568PBF - Power MOSFET, N Channel, 150 V, 171 A, 0.0048 ohm, TO-247AC, Through Hole

SC11170

Power MOSFET, N Channel, 150 V, 171 A, 0.0048 ohm, TO-247AC, Through Hole

INFINEON

The IRFP4568PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...

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N Channel 150V 171A 0.0048ohm
IRFP4110PBF
IRFP4110PBF - Power MOSFET, N Channel, 100 V, 120 A, 0.0037 ohm, TO-247AC, Through Hole

SC11168

Power MOSFET, N Channel, 100 V, 120 A, 0.0037 ohm, TO-247AC, Through Hole

INFINEON

The IRFP4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...

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N Channel 100V 120A 0.0037ohm
ZVN4310A
ZVN4310A - Power MOSFET, N Channel, 100 V, 900 mA, 0.65 ohm, TO-226AA, Through Hole

SC06969

Power MOSFET, N Channel, 100 V, 900 mA, 0.65 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVN4310A is a 100V E-Line N-channel Enhancement Mode Vertical DMOS FET with 0.5Ω resistance and 850mW power dissipation.

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N Channel 100V 900mA 0.65ohm
IRFD120PBF
IRFD120PBF - Power MOSFET, N Channel, 100 V, 1.3 A, 0.27 ohm, DIP, Through Hole

SC07021

Power MOSFET, N Channel, 100 V, 1.3 A, 0.27 ohm, DIP, Through Hole

VISHAY

The IRFD120PBF is a 100V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which c...

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N Channel 100V 1.3A 0.27ohm
FQP19N20
FQP19N20 - Power MOSFET, N Channel, 200 V, 19.4 A, 0.12 ohm, TO-220, Through Hole

SC08208

Power MOSFET, N Channel, 200 V, 19.4 A, 0.12 ohm, TO-220, Through Hole

ONSEMI

The FQP19N20 is a N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high av...

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N Channel 200V 19.4A 0.12ohm
IRFU9014PBF
IRFU9014PBF - Power MOSFET, P Channel, 60 V, 5.6 A, 0.5 ohm, TO-251AA, Through Hole

SC11069

Power MOSFET, P Channel, 60 V, 5.6 A, 0.5 ohm, TO-251AA, Through Hole

VISHAY

The IRFU9014PBF is a P-channel Power MOSFET with combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching and ease of paralleling

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P Channel 60V 5.6A 0.5ohm
IRFP23N50LPBF
IRFP23N50LPBF - Power MOSFET, N Channel, 500 V, 23 A, 0.235 ohm, TO-247AC, Through Hole

SC11180

Power MOSFET, N Channel, 500 V, 23 A, 0.235 ohm, TO-247AC, Through Hole

VISHAY

The IRFP23N50LPBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. Superfast body diode eliminates the need for external diodes in ZVS applications. Suitable for use in zero voltage switching SMPS, telecom and se...

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N Channel 500V 23A 0.235ohm
FQA170N06.
FQA170N06. - Power MOSFET, N Channel, 60 V, 170 A, 0.0056 ohm, TO-3P, Through Hole

SC06320

Power MOSFET, N Channel, 60 V, 170 A, 0.0056 ohm, TO-3P, Through Hole

ONSEMI

• Channel Type : N Channel • Drain Source On State Resistance : 0.0056ohm

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N Channel - - 0.0056ohm