MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP3099L-7
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SC21313 |
Power MOSFET, P Channel, 30 V, 3.8 A, 0.065 ohm, SOT-23, Surface Mount DIODES INC. DMP3099L-7 is a P-channel enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applicati...
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P Channel | 30V | 3.8A | 0.065ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7113DN-T1-GE3
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SC21597 |
Power MOSFET, P Channel, 100 V, 13.2 A, 0.119 ohm, PowerPAK 1212, Surface Mount VISHAY • P-channel 100V (D-S) TrenchFET® power MOSFET • Low thermal resistance PowerPAK® package with Low 1.07mm profile • UIS and Rg tested • Suitable for active clamp in intermediate DC/DC power supplies
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P Channel | 100V | 13.2A | 0.119ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI3456DDV-T1-GE3
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SC21595 |
Power MOSFET, N Channel, 30 V, 6.3 A, 0.033 ohm, TSOP, Surface Mount VISHAY The SI3456DDV-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch, HDD and DC-to-DC converter applications. • Halogen-free • -55 to 150°C Operating temperature range
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N Channel | 30V | 6.3A | 0.033ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NDS0610
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SC21483 |
Power MOSFET, P Channel, 60 V, 120 mA, 10 ohm, SOT-23, Surface Mount ONSEMI The NDS0610 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. They can be used...
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P Channel | 60V | 120mA | 10ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQ2364EES-T1_GE3
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SC21606 |
Power MOSFET, N Channel, 60 V, 2 A, 0.19 ohm, SOT-23, Surface Mount VISHAY New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...
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N Channel | 60V | 2A | 0.19ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002BKW,115
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SC21405 |
Power MOSFET, N Channel, 60 V, 310 mA, 1 ohm, SOT-323, Surface Mount NEXPERIA The 2N7002BKW is a N-channel enhancement-mode MOSFET designed in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuits. • Logic-leve...
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N Channel | 60V | 310mA | 1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDT86256
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SC21477 |
Power MOSFET, N Channel, 150 V, 3 A, 0.695 ohm, SOT-223, Surface Mount ONSEMI • Channel Type : N Channel • Drain Source Voltage Vds : 150V • Continuous Drain Current Id : 3A • Drain Source On State Resistance : 0.695ohm
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N Channel | 150V | 3A | 0.695ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS816NWH6327XTSA1
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SC21340 |
Power MOSFET, N Channel, 20 V, 1.4 A, 0.107 ohm, SOT-323, Surface Mount INFINEON • N-channel Optima's™-2 small signal transistor • Enhancement mode • Ultra-logic level (1.8V rated) • Avalanche rated • Qualified according to AEC Q101
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N Channel | 20V | 1.4A | 0.107ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX7002BKMYL
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SC21425 |
Power MOSFET, N Channel, 60 V, 350 mA, 2.2 ohm, SOT-883, Surface Mount NEXPERIA • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 350mA • Drain Source On State Resistance : 2.2ohm
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N Channel | 60V | 350mA | 2.2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMV30UN2R
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SC21452 |
Power MOSFET, N Channel, 20 V, 5.4 A, 0.024 ohm, SOT-23, Surface Mount NEXPERIA The PMV30UN2 is a N-channel enhancement mode Field-effect Transistor (FET) in a small surface-mounted device (SMD) plastic package using Trench MOSFET technology. Enhanced power dissipation capability of 1000mW. • Low threshold voltage • Very fast switchin...
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N Channel | 20V | 5.4A | 0.024ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXFN80N50
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SC17017 |
MOSFET Transistor, N Channel, 80A, 10V, IXYS SEMICONDUCTOR The IXFN80N50 is a N-channel enhancement mode Power MOSFET features miniBLOC, with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated. • Fast intrinsic rectifier •...
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N Channel | 500V | 80A | 0.055ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQU17P06
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SC11064 |
Power MOSFET, P Channel, 60 V, 12 A, 0.11 ohm, TO-251AA, Through Hole ONSEMI The FQU17P06 is a P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high...
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P Channel | 60V | 12A | 0.11ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP30N06
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SC16931 |
Power MOSFET, N Channel, 60 V, 30 A, 0.031 ohm, TO-220AB, Through Hole ONSEMI The FQP30N06 is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performanc...
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N Channel | 60V | 30A | 0.031ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF2804PBF
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SC08252 |
Power MOSFET, N Channel, 40 V, 280 A, 0.0023 ohm, TO-220AB, Through Hole INFINEON The IRF2804PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed...
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N Channel | 40V | 280A | 0.0023ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP240PBF
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SC10643 |
Power MOSFET, N Channel, 200 V, 20 A, 0.18 ohm, TO-247AC, Through Hole VISHAY The IRFP240PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...
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N Channel | 200V | 20A | 0.18ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPW20N60C3FKSA1
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SC16942 |
Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-247, Through Hole INFINEON The SPW20N60C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, periodic avalanche rated, extremely dv/dt rated and qualified according to JEDEC for target applications. • High peak current capability •...
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N Channel | 650V | 20.7A | 0.19ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138PW,115
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SC16000 |
Power MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-323, SMD NEXPERIA The BSS138PW is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic Level Compatible • Very Fast Switching • ESD Protection Upto 1.5kV • AEC-Q101 Qualified
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N Channel | 60V | 320mA | 0.9ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP4568PBF
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SC11170 |
Power MOSFET, N Channel, 150 V, 171 A, 0.0048 ohm, TO-247AC, Through Hole INFINEON The IRFP4568PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...
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N Channel | 150V | 171A | 0.0048ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP4110PBF
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SC11168 |
Power MOSFET, N Channel, 100 V, 120 A, 0.0037 ohm, TO-247AC, Through Hole INFINEON The IRFP4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...
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N Channel | 100V | 120A | 0.0037ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN4310A
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SC06969 |
Power MOSFET, N Channel, 100 V, 900 mA, 0.65 ohm, TO-226AA, Through Hole DIODES INC. The ZVN4310A is a 100V E-Line N-channel Enhancement Mode Vertical DMOS FET with 0.5Ω resistance and 850mW power dissipation.
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N Channel | 100V | 900mA | 0.65ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFD120PBF
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SC07021 |
Power MOSFET, N Channel, 100 V, 1.3 A, 0.27 ohm, DIP, Through Hole VISHAY The IRFD120PBF is a 100V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which c...
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N Channel | 100V | 1.3A | 0.27ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP19N20
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SC08208 |
Power MOSFET, N Channel, 200 V, 19.4 A, 0.12 ohm, TO-220, Through Hole ONSEMI The FQP19N20 is a N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high av...
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N Channel | 200V | 19.4A | 0.12ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFU9014PBF
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SC11069 |
Power MOSFET, P Channel, 60 V, 5.6 A, 0.5 ohm, TO-251AA, Through Hole VISHAY The IRFU9014PBF is a P-channel Power MOSFET with combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching and ease of paralleling
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P Channel | 60V | 5.6A | 0.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP23N50LPBF
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SC11180 |
Power MOSFET, N Channel, 500 V, 23 A, 0.235 ohm, TO-247AC, Through Hole VISHAY The IRFP23N50LPBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. Superfast body diode eliminates the need for external diodes in ZVS applications. Suitable for use in zero voltage switching SMPS, telecom and se...
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N Channel | 500V | 23A | 0.235ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQA170N06.
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SC06320 |
Power MOSFET, N Channel, 60 V, 170 A, 0.0056 ohm, TO-3P, Through Hole ONSEMI • Channel Type : N Channel • Drain Source On State Resistance : 0.0056ohm
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N Channel | - | - | 0.0056ohm |