Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

Diodes Thyristors, DIACS & TRIACS Npn Transistors Pnp Transistors Photo Transistors
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IRF9640PBF
IRF9640PBF - Power MOSFET, P Channel, 200 V, 11 A, 0.5 ohm, TO-220AB, Through Hole

SC08142

Power MOSFET, P Channel, 200 V, 11 A, 0.5 ohm, TO-220AB, Through Hole

VISHAY

The IRF9640PBF is a -200V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commerci...

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P Channel 200V 11A 0.5ohm
BC237B
BC237B - Transistor, NPN, TO92

SC09155

Transistor, NPN, TO92

MULTICOMP PRO

The BC237B is a NPN silicon planar Epitaxial Transistor, best suited for use in driver stages of audio amplifiers, low noise input stages of tape recorders, Hi-Fi amplifiers, signal processing circuits of television receivers. • 375°C/W Junction to Ambient...

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MPSA92
MPSA92 - Transistor, PNP, TO92

SC09160

Transistor, PNP, TO92

MULTICOMP PRO

The MPSA92 is a low power Bipolar Transistor with breakdown voltage of 160V minimum for applications requiring relatively low collector current such as lamp drivers and neon tubes. Designed for general purpose applications requiring high breakdown voltages...

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2N2905
2N2905 - Transistor, PNP, TO39

SC06701

Transistor, PNP, TO39

MULTICOMP PRO

The 2N2905 from Multicomp Pro is a through hole, silicon planar PNP low power bipolar transistors in TO-39 metal can package. This are general purpose transistor suitable for switching applications. • Collector emitter voltage (Vce) of -40V • Continuous co...

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2N2907
2N2907 - Transistor, PNP, TO18

SC06704

Transistor, PNP, TO18

MULTICOMP PRO

The 2N2907 from Multicomp Pro is a through hole, PNP transistors in TO-18 metal can package. This transistor is suitable for switching and amplification. • Collector emitter voltage (Vce) of -40V • Continuous collector current (Ic) of -600mA • Power dissip...

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BC640
BC640 - Transistor, PNP, TO92

SC09157

Transistor, PNP, TO92

MULTICOMP PRO

The BC640 is a PNP silicon planar epitaxial low power Bipolar Transistor for driver stages and audio amplifier applications. • 45°C/W Junction-to-case thermal resistance • 156°C/W Junction-to-ambient in free air thermal resistance • Multicomp Pro products ...

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IRFP450APBF
IRFP450APBF - Power MOSFET, N Channel, 500 V, 14 A, 0.4 ohm, TO-247AC, Through Hole

SC10645

Power MOSFET, N Channel, 500 V, 14 A, 0.4 ohm, TO-247AC, Through Hole

VISHAY

The IRFP450APBF is a 500V N-channel Power MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching. • Improved gate, avalanche and dy...

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N Channel 500V 14A 0.4ohm
BC849C
BC849C - Transistor, NPN SOT23

SC06588

Transistor, NPN SOT23

NXP

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STP9NK50ZFP
STP9NK50ZFP - Power MOSFET, N Channel, 500 V, 7.2 A, 0.72 ohm, TO-220FP, Through Hole

SC13028

Power MOSFET, N Channel, 500 V, 7.2 A, 0.72 ohm, TO-220FP, Through Hole

STMICROELECTRONICS

The STP9NK50ZFP is a 500V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...

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N Channel 500V 7.2A 0.72ohm
BC847B
BC847B - Transistor, NPN, SOT23

SC06614

Transistor, NPN, SOT23

NXP

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IRF3710PBF
IRF3710PBF - Power MOSFET, N Channel, 100 V, 46 A, 0.023 ohm, TO-220AB, Through Hole

SC11104

Power MOSFET, N Channel, 100 V, 46 A, 0.023 ohm, TO-220AB, Through Hole

INFINEON

The IRF3710PBF is a 100V single N-channel Advanced HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that ...

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N Channel 100V 46A 0.023ohm
TIP36C
TIP36C - Transistor, PNP, TO218

SC06792

Transistor, PNP, TO218

STMICROELECTRONICS

The TIP36C is a complementary PNP Power Transistor with low collector-emitter saturation voltage. It is manufactured in planar technology with base island layout. The resulting transistor show exceptional high gain performance coupled with very low saturat...

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BSS84
BSS84 - Power MOSFET, P Channel, 50 V, 130 mA, 1.2 ohm, SOT-23, Surface Mount

SC11030

Power MOSFET, P Channel, 50 V, 130 mA, 1.2 ohm, SOT-23, Surface Mount

ONSEMI

The BSS84 is P channel logic level enhancement mode field effect transistor in SOT-23 package. This product is designed to minimize on state resistance while provide rugged, reliable and fast switching performance thus BSS84 are suited for low voltage, low...

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P Channel 50V 130mA 1.2ohm
BU426A
BU426A - Transistor, NPN, TO218

SC06797

Transistor, NPN, TO218

MULTICOMP PRO

The BU426A is a NPN Fast Switching High Voltage Transistor more specially intended for operating in colour TV supply systems. • Collector-emitter sustaining voltage (Vceo (sus) = 400V minimum) • Low collector-emitter saturation voltage • High voltage power...

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BD135
BD135 - Transistor, NPN, TO126

SC10992

Transistor, NPN, TO126

STMICROELECTRONICS

The BD135 is a NPN low voltage Transistor built in epitaxial planar technology. Designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. • Complement to BD136 • 0.5A Base current • 10°C/W Junction-to-case thermal r...

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NDT2955
NDT2955 - Power MOSFET, P Channel, 60 V, 2.5 A, 0.3 ohm, SOT-223, Surface Mount

SC11042

Power MOSFET, P Channel, 60 V, 2.5 A, 0.3 ohm, SOT-223, Surface Mount

ONSEMI

The NDT2955 is a surface mount, 60V P channel enhancement mode field effect transistors in SOT-223 package. Transistor is produced using high voltage trench process and suitable for power management applications. • High density cell design for extremely lo...

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P Channel 60V 2.5A 0.3ohm
BD680
BD680 - Darlington Transistor, TO126

SC06882

Darlington Transistor, TO126

STMICROELECTRONICS

The BD680 is a PNP complementary power Darlington Transistor manufactured in Planar Base Island technology. It offers monolithic Darlington configuration with integrated anti-parallel collector-emitter diode. • Good hFE linearity • High fT frequency

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IRLZ34NPBF
IRLZ34NPBF - Power MOSFET, N Channel, 55 V, 27 A, 0.035 ohm, TO-220AB, Through Hole

SC11125

Power MOSFET, N Channel, 55 V, 27 A, 0.035 ohm, TO-220AB, Through Hole

INFINEON

The IRLZ34NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...

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N Channel 55V 27A 0.035ohm
D44H8G
D44H8G - Transistor, NPN, TO220

SC06751

Transistor, NPN, TO220

ONSEMI

The D44H8G is a 10A NPN bipolar Power Transistor offers low collector-emitter saturation voltage. It can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters a...

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ZVN4206A
ZVN4206A - Power MOSFET, N Channel, 60 V, 600 mA, 1.5 ohm, TO-226AA, Through Hole

SC06966

Power MOSFET, N Channel, 60 V, 600 mA, 1.5 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVN4206A is a 60V E-Line N-channel Enhancement Mode Vertical DMOS FET with 1Ω resistance and 700mW power dissipation.

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N Channel 60V 600mA 1.5ohm
BC635
BC635 - Transistor, NPN, TO92

SC06696

Transistor, NPN, TO92

MULTICOMP PRO

The BC635 is a NPN silicon planar epitaxial medium power Bipolar Transistor with high performance, low frequency devices typically with current ratings 1A up to 1W power dissipation. • Driver stages of audio amplifier application • 45°C/W Junction-to-case ...

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IRF610PBF
IRF610PBF - Power MOSFET, N Channel, 200 V, 3.3 A, 1.5 ohm, TO-220AB, Through Hole

SC11106

Power MOSFET, N Channel, 200 V, 3.3 A, 1.5 ohm, TO-220AB, Through Hole

VISHAY

The IRF610PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industr...

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N Channel 200V 3.3A 1.5ohm
J113
J113 - JFET Transistor, -35 V, -3 V, TO-92, 3 Pin, 150 °C

SC08140

JFET Transistor, -35 V, -3 V, TO-92, 3 Pin, 150 °C

ONSEMI

The J113 is a through hole, N channel switch in TO-92 package. This device is designed for low level analogue switching, sample and hold circuits and chopper stabilized amplifiers. • Source and drain are interchangeable • Gate to source breakdown voltage o...

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N Channel - - -
BCW71
BCW71 - Transistor, NPN SOT23

SC06592

Transistor, NPN SOT23

NXP

The BCW71 is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with the general purpose switching and amplification. • Low current • Low voltage • Low noise • K1 Marking code

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MJL3281AG
MJL3281AG - Transistor, NPN, TO264

SC06820

Transistor, NPN, TO264

ONSEMI

The MJL3281AG is a NPN complementary Bipolar Power Transistor with superior gain linearity. • Complement to MJL1302A • Exceptional Safe Operating Area • Gain Matching within 10% from 50mA to 3A • Excellent Gain Linearity • High BVCEO • High Frequency • Rel...

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