Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

Diodes Thyristors, DIACS & TRIACS Npn Transistors Pnp Transistors Photo Transistors
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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Power Dissipation Transistor Case Style Drain Source On State Resistance
 
 
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IRF540ZPBF
IRF540ZPBF - Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-220AB, Through Hole

SC11108

Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-220AB, Through Hole

INFINEON

The IRF540ZPBF is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching ...

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N Channel 100V 36A 92W - 0.0265ohm
IRFR9024PBF
IRFR9024PBF - Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-252 (DPAK), Surface Mount

SC11199

Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-252 (DPAK), Surface Mount

VISHAY

The IRFR9024PBF is a -60V P-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The DPAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. The straight lead version (IRFU, ...

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P Channel 60V 8.8A 42W TO-252 (DPAK) 0.28ohm
IRLML2402PBF
IRLML2402PBF - Power MOSFET, N Channel, 20 V, 1.2 A, 0.25 ohm, SOT-23, Surface Mount

SC06986

Power MOSFET, N Channel, 20 V, 1.2 A, 0.25 ohm, SOT-23, Surface Mount

INFINEON

The IRLML2402PBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. The international rectifier utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with...

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N Channel 20V 1.2A 540mW SOT-23 0.25ohm
BC549C
BC549C - Transistor, NPN, TO92

SC12757

Transistor, NPN, TO92

MULTICOMP PRO

The BC549C from Multicomp Pro are through hole, NPN silicon planar epitaxial general purpose transistor in TO-92 metal can package. This device is typically used in driver stages of audio amplifiers, tape recorders, low noise input stages, Hi-Fi amplifiers...

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- - - 625mW TO-92 -
BU426A
BU426A - Transistor, NPN, TO218

SC06797

Transistor, NPN, TO218

MULTICOMP PRO

The BU426A is a NPN Fast Switching High Voltage Transistor more specially intended for operating in colour TV supply systems. • Collector-emitter sustaining voltage (Vceo (sus) = 400V minimum) • Low collector-emitter saturation voltage • High voltage power...

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- - - 113W TO-247 -
BD135
BD135 - Transistor, NPN, TO126

SC10992

Transistor, NPN, TO126

STMICROELECTRONICS

The BD135 is a NPN low voltage Transistor built in epitaxial planar technology. Designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. • Complement to BD136 • 0.5A Base current • 10°C/W Junction-to-case thermal r...

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- - - 1.25W TO-126 -
NDT2955
NDT2955 - Power MOSFET, P Channel, 60 V, 2.5 A, 0.3 ohm, SOT-223, Surface Mount

SC11042

Power MOSFET, P Channel, 60 V, 2.5 A, 0.3 ohm, SOT-223, Surface Mount

ONSEMI

The NDT2955 is a surface mount, 60V P channel enhancement mode field effect transistors in SOT-223 package. Transistor is produced using high voltage trench process and suitable for power management applications. • High density cell design for extremely lo...

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P Channel 60V 2.5A 3W - 0.3ohm
D44H8G
D44H8G - Transistor, NPN, TO220

SC06751

Transistor, NPN, TO220

ONSEMI

The D44H8G is a 10A NPN bipolar Power Transistor offers low collector-emitter saturation voltage. It can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters a...

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- - - 2W TO-220 -
BD680
BD680 - Darlington Transistor, TO126

SC06882

Darlington Transistor, TO126

STMICROELECTRONICS

The BD680 is a PNP complementary power Darlington Transistor manufactured in Planar Base Island technology. It offers monolithic Darlington configuration with integrated anti-parallel collector-emitter diode. • Good hFE linearity • High fT frequency

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IRLZ34NPBF
IRLZ34NPBF - Power MOSFET, N Channel, 55 V, 27 A, 0.035 ohm, TO-220AB, Through Hole

SC11125

Power MOSFET, N Channel, 55 V, 27 A, 0.035 ohm, TO-220AB, Through Hole

INFINEON

The IRLZ34NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...

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N Channel 55V 27A 56W - 0.035ohm
ZVN4206A
ZVN4206A - Power MOSFET, N Channel, 60 V, 600 mA, 1 ohm, TO-226AA, Through Hole

SC06966

Power MOSFET, N Channel, 60 V, 600 mA, 1 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVN4206A is a 60V E-Line N-channel Enhancement Mode Vertical DMOS FET with 1Ω resistance and 700mW power dissipation.

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N Channel 60V 600mA 700mW TO-226AA 1ohm
BC635
BC635 - Transistor, NPN, TO92

SC06696

Transistor, NPN, TO92

MULTICOMP PRO

The BC635 is a NPN silicon planar epitaxial medium power Bipolar Transistor with high performance, low frequency devices typically with current ratings 1A up to 1W power dissipation. • Driver stages of audio amplifier application • 45°C/W Junction-to-case ...

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- - - 800mW TO-92 -
IRF610PBF
IRF610PBF - Power MOSFET, N Channel, 200 V, 3.3 A, 1.5 ohm, TO-220AB, Through Hole

SC11106

Power MOSFET, N Channel, 200 V, 3.3 A, 1.5 ohm, TO-220AB, Through Hole

VISHAY

The IRF610PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industr...

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N Channel 200V 3.3A 36W TO-220AB 1.5ohm
ZTX651
ZTX651 - Transistor, NPN, E-Line

SC10970

Transistor, NPN, E-Line

DIODES INC.

The ZTX651 from Diode Inc is a through hole, 60V NPN medium power transistor in E-Line (TO-92 Compatible) package. This device is based on moulded plastic and “Green” moulding compound and terminals are matte tin finish. • Automotive grade AEC-Q101 qualifi...

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- - - 1W TO-92 -
TIP121
TIP121 - Power Transistor

SC06508

Power Transistor

STMICROELECTRONICS

The TIP121 is a complementary NPN Power Darlington Transistor with low collector-emitter saturation voltage. It is manufactured in planar technology with base island layout. The resulting transistor show exceptional high gain performance coupled with very ...

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- - - - - -
2N2905A
2N2905A - Transistor, PNP, TO39

SC06713

Transistor, PNP, TO39

MULTICOMP PRO

General purpose silicon planar PNP switching transistor. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers would recommend to a friend

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- - - 3W TO-39 -
IRF9Z34NPBF
IRF9Z34NPBF - Power MOSFET, P Channel, 55 V, 17 A, 0.1 ohm, TO-220AB, Through Hole

SC11120

Power MOSFET, P Channel, 55 V, 17 A, 0.1 ohm, TO-220AB, Through Hole

INFINEON

The IRF9Z34NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...

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P Channel 55V 17A 56W - 0.1ohm
IRFR9110PBF
IRFR9110PBF - Power MOSFET, P Channel, 100 V, 3.1 A, 1.2 ohm, TO-252 (DPAK), Surface Mount

SC11203

Power MOSFET, P Channel, 100 V, 3.1 A, 1.2 ohm, TO-252 (DPAK), Surface Mount

VISHAY

The IRFR9110PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave sol...

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P Channel 100V 3.1A 25W TO-252 (DPAK) 1.2ohm
IRF830APBF
IRF830APBF - Power MOSFET, N Channel, 500 V, 5 A, 1.4 ohm, TO-220AB, Through Hole

SC11087

Power MOSFET, N Channel, 500 V, 5 A, 1.4 ohm, TO-220AB, Through Hole

VISHAY

The IRF830APBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS, uninterruptable power supply and high speed power switching. • Dyn...

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N Channel 500V 5A 74W TO-220AB 1.4ohm
SPA20N60C3
SPA20N60C3 - Power MOSFET, N Channel, 650 V, 20.7 A, 0.16 ohm, TO-220AB, Through Hole

SC11115

Power MOSFET, N Channel, 650 V, 20.7 A, 0.16 ohm, TO-220AB, Through Hole

INFINEON

The SPA20N60C3 is a 650V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...

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N Channel 650V 20.7A 34.5W TO-220AB 0.16ohm
BSS138....
BSS138.... - MOSFET, N, SOT23

SC06981

MOSFET, N, SOT23

ONSEMI

• Drain Source Voltage Vds : 50V • Continuous Drain Current Id : 220mA • Transistor Case Style : SOT-23

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- 50V 220mA - SOT-23 -
ZTX603
ZTX603 - Darlington Transistor, E-Line

SC10995

Darlington Transistor, E-Line

DIODES INC.

ZTX603 is a NPN silicon planar medium power Darlington transistor. • Collector-base voltage is 100V • Collector-emitter voltage is 80V • Emitter-base voltage is 10V • Peak pulse current is 4A • Continuous collector current is 1A • Power dissipation at Tamb...

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FDN357N
FDN357N - Power MOSFET, N Channel, 30 V, 2.5 A, 0.06 ohm, SOT-23, Surface Mount

SC11040

Power MOSFET, N Channel, 30 V, 2.5 A, 0.06 ohm, SOT-23, Surface Mount

ONSEMI

The FDN357N is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage...

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N Channel 30V 2.5A 500mW - 0.06ohm
NDT3055L
NDT3055L - Power MOSFET, N Channel, 60 V, 4 A, 0.1 ohm, SOT-223, Surface Mount

SC11043

Power MOSFET, N Channel, 60 V, 4 A, 0.1 ohm, SOT-223, Surface Mount

ONSEMI

The NDT3055L is a N-channel logic level enhancement mould MOSFET using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand hig...

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N Channel 60V 4A 3W - 0.1ohm
IRF630.
IRF630. - Power MOSFET, N Channel, 200 V, 10 A, 0.4 ohm, TO-220, Through Hole

SCIRF630

Power MOSFET, N Channel, 200 V, 10 A, 0.4 ohm, TO-220, Through Hole

STMICROELECTRONICS

• Channel Type : N Channel • Drain Source Voltage Vds : 200V • Continuous Drain Current Id : 10A • Power Dissipation : 100W • Transistor Case Style : TO-220 • Drain Source On State Resistance : 0.4ohm

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N Channel 200V 10A 100W TO-220 0.4ohm