Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

Diodes Thyristors, DIACS & TRIACS Npn Transistors Pnp Transistors Photo Transistors
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BD135
BD135 - Transistor, NPN, TO126

SC09460

Transistor, NPN, TO126

CDIL

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2N7000
2N7000 - Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

SC06951

Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

ONSEMI

The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perf...

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BC847BLT3G
BC847BLT3G - Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 225mW, SOT-23, SMD

SC16032

Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 225mW, SOT-23, SMD

ONSEMI

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FMMT458
FMMT458 - Bipolar (BJT) Single Transistor, NPN, 400V, 225mA, 500mW, SOT-23, SMD

SC16056

Bipolar (BJT) Single Transistor, NPN, 400V, 225mA, 500mW, SOT-23, SMD

DIODES INC.

FMMT458 is a NPN high voltage transistor in a 3 pin SOT23 package. • BVCEO is greater than 400V • IC = 225mA high continuous collector current • ICM = 1A peak pulse current • 500mW power dissipation • Excellent hFE characteristics up to 100mA • Complementa...

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FDPF18N50
FDPF18N50 - Power MOSFET, N Channel, 500 V, 18 A, 0.265 ohm, TO-220F, Through Hole

SC16953

Power MOSFET, N Channel, 500 V, 18 A, 0.265 ohm, TO-220F, Through Hole

ONSEMI

The FDPF18N50 is an UniFET™ high voltage MOSFET produced based on planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitab...

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BCP56-16,115
BCP56-16,115 - Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 650mW, SOT-223, SMD

SC16109

Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 650mW, SOT-223, SMD

NEXPERIA

The BCP56 series 1A NPN Medium Power Transistor in a very small leadless surface-mount plastic package. • High current • Three current gain selections • High power dissipation capability • Exposed heat-sink for excellent thermal and electrical conductivity...

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BFR92PE6327HTSA1
BFR92PE6327HTSA1 - Bipolar - RF Transistor, NPN, 15V, 5GHz, 280mW, 45mA, SOT-23

SC16006

Bipolar - RF Transistor, NPN, 15V, 5GHz, 280mW, 45mA, SOT-23

INFINEON

The BFR 92P E6327 is a NPN Silicon RF Transistor for broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 to 20mA. • Complementary type - BFT91 (PNP)

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BD139
BD139 - Transistor, NPN, TO126

SC09455

Transistor, NPN, TO126

STMICROELECTRONICS

The BD139 is a NPN complementary low voltage NPN transistor in 3 pin SOT-32 package. This device is designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. • Products are pre-selected in DC current gain • Collecto...

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2N3904
2N3904 - Transistor, NPN, TO92

SC10960

Transistor, NPN, TO92

ONSEMI

The 2N3904 from Fairchild is a through hole, NPN general purpose transistor in TO-92 package which is designed for amplifier and switch application. The dynamic range of device extends to 100mA while operating as switch and it will be 100MHz for amplifier....

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2N2222
2N2222 - Transistor, NPN, TO18

SC06697

Transistor, NPN, TO18

MULTICOMP PRO

The 2N2222 from Multicomp Pro is a through hole, low power bipolar transistor in TO-18 metal can package. This NPN silicon planar switching transistor is used for switching, linear DC power supply and VHF amplifier applications. • Collector emitter breakdo...

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BSH205G2R
BSH205G2R - Power MOSFET, P Channel, 20 V, 2 A, 0.17 ohm, TO-236AB, Surface Mount

SC16811

Power MOSFET, P Channel, 20 V, 2 A, 0.17 ohm, TO-236AB, Surface Mount

NEXPERIA

The BSH205G2 is a P-channel MOSFET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, high-side load switch and switching circuit applications. • Low threshold voltage • Low ON-...

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FDN357N
FDN357N - Power MOSFET, N Channel, 30 V, 2.5 A, 0.06 ohm, SOT-23, Surface Mount

SC11040

Power MOSFET, N Channel, 30 V, 2.5 A, 0.06 ohm, SOT-23, Surface Mount

ONSEMI

The FDN357N is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage...

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BS170
BS170 - Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, TO-92, Through Hole

SC06956

Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, TO-92, Through Hole

ONSEMI

The BS170 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...

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SI3456DDV-T1-GE3
SI3456DDV-T1-GE3 - Power MOSFET, N Channel, 30 V, 6.3 A, 0.04 ohm, TSOP, Surface Mount

SC21595

Power MOSFET, N Channel, 30 V, 6.3 A, 0.04 ohm, TSOP, Surface Mount

VISHAY

The SI3456DDV-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch, HDD and DC-to-DC converter applications. • Halogen-free • -55 to 150°C Operating temperature range

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BF256B
BF256B - JFET Transistor, JFET, -30V, 6mA, 13mA, -8 V, TO-92

SC15912

JFET Transistor, JFET, -30V, 6mA, 13mA, -8 V, TO-92

ONSEMI

The BF256B is a N-channel JFET Transistor for RF/VHF/UHF amplifiers. • 350mW Power Dissipation

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2N3906
2N3906 - Transistor, PNP, TO92

SC08424

Transistor, PNP, TO92

MULTICOMP PRO

The 2N3906 from Multicomp Pro is a through hole, PNP low power, silicon planar switching transistors in TO-92 metal can package. This transistor features fast switching, hence is suitable for switching and amplification. • Collector emitter voltage (Vce) o...

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ULN2803A
ULN2803A - Darlington Array 8 NPN, 2803, DIP18

SC08607

Darlington Array 8 NPN, 2803, DIP18

STMICROELECTRONICS

The ULN2803A is an eight darlington array in 18 pin DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features a peak load current rating of 600mA (500mA conti...

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MRF300BN
MRF300BN - RF FET Transistor, 133V, 272W, 1.8MHz, 250MHz, TO-247

SC15951

RF FET Transistor, 133V, 272W, 1.8MHz, 250MHz, TO-247

NXP

These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical applications and HF and VHF communications as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Their unmatched input and...

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PMV30UN2R
PMV30UN2R - Power MOSFET, N Channel, 20 V, 5.4 A, 0.032 ohm, SOT-23, Surface Mount

SC21452

Power MOSFET, N Channel, 20 V, 5.4 A, 0.032 ohm, SOT-23, Surface Mount

NEXPERIA

The PMV30UN2 is a N-channel enhancement mode Field-effect Transistor (FET) in a small surface-mounted device (SMD) plastic package using Trench MOSFET technology. Enhanced power dissipation capability of 1000mW. • Low threshold voltage • Very fast switchin...

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FDN360P
FDN360P - Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount

SC07006

Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount

ONSEMI

The FDN360P is a surface mount, single P channel PowerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is well suited...

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IRF830APBF
IRF830APBF - Power MOSFET, N Channel, 500 V, 5 A, 1.4 ohm, TO-220AB, Through Hole

SC11087

Power MOSFET, N Channel, 500 V, 5 A, 1.4 ohm, TO-220AB, Through Hole

VISHAY

The IRF830APBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS, uninterruptable power supply and high speed power switching. • Dyn...

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IRF730PBF
IRF730PBF - N Channel Power MOSFET, 400V, 5.5A, 1 Ohm, TO-220AB

SC16902

N Channel Power MOSFET, 400V, 5.5A, 1 Ohm, TO-220AB

VISHAY

• Dynamic dV/dt rating • Repetitive avalanche rated • 150°C Operating temperature • Easy to parallel • Simple drive requirement

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BC817-25
BC817-25 - Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 310mW, SOT-23, SMD

SC16054

Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 310mW, SOT-23, SMD

DIODES INC.

BC817-25 is a NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. • Collector-emitter voltage is 45V (open base, Tamb = 25°C), collector current is 500mA (Tamb = 25°C) • Peak collector current is 1A (sin...

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BDV66B
BDV66B - Darlington Transistor, TO247

SC06868

Darlington Transistor, TO247

MULTICOMP PRO

The BDV66B is a -100V Silicon PNP Complementary Darlington Power Transistor having monolithic construction with built-in base-emitter shunt resistor. • Collector-emitter sustaining voltage (Vceo (sus) = 100V minimum) • Collector-emitter saturation voltage(...

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MMUN2111LT1G
MMUN2111LT1G - Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 10 kohm, 10 kohm

SC10965

Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 10 kohm, 10 kohm

ONSEMI

The MMUN2111LT1G is a PNP Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...

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