Transistors
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Transistors
Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.
| Diodes | Thyristors, DIACS & TRIACS | Npn Transistors | Pnp Transistors | Photo Transistors |
| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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BD135
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SC09460 |
Transistor, NPN, TO126 CDIL
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2N7000
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SC06951 |
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole ONSEMI The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perf...
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BC847BLT3G
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SC16032 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 225mW, SOT-23, SMD ONSEMI
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FMMT458
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SC16056 |
Bipolar (BJT) Single Transistor, NPN, 400V, 225mA, 500mW, SOT-23, SMD DIODES INC. FMMT458 is a NPN high voltage transistor in a 3 pin SOT23 package. • BVCEO is greater than 400V • IC = 225mA high continuous collector current • ICM = 1A peak pulse current • 500mW power dissipation • Excellent hFE characteristics up to 100mA • Complementa...
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FDPF18N50
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SC16953 |
Power MOSFET, N Channel, 500 V, 18 A, 0.265 ohm, TO-220F, Through Hole ONSEMI The FDPF18N50 is an UniFET™ high voltage MOSFET produced based on planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitab...
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BCP56-16,115
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SC16109 |
Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 650mW, SOT-223, SMD NEXPERIA The BCP56 series 1A NPN Medium Power Transistor in a very small leadless surface-mount plastic package. • High current • Three current gain selections • High power dissipation capability • Exposed heat-sink for excellent thermal and electrical conductivity...
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BFR92PE6327HTSA1
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SC16006 |
Bipolar - RF Transistor, NPN, 15V, 5GHz, 280mW, 45mA, SOT-23 INFINEON The BFR 92P E6327 is a NPN Silicon RF Transistor for broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 to 20mA. • Complementary type - BFT91 (PNP)
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BD139
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SC09455 |
Transistor, NPN, TO126 STMICROELECTRONICS The BD139 is a NPN complementary low voltage NPN transistor in 3 pin SOT-32 package. This device is designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. • Products are pre-selected in DC current gain • Collecto...
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2N3904
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SC10960 |
Transistor, NPN, TO92 ONSEMI The 2N3904 from Fairchild is a through hole, NPN general purpose transistor in TO-92 package which is designed for amplifier and switch application. The dynamic range of device extends to 100mA while operating as switch and it will be 100MHz for amplifier....
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2N2222
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SC06697 |
Transistor, NPN, TO18 MULTICOMP PRO The 2N2222 from Multicomp Pro is a through hole, low power bipolar transistor in TO-18 metal can package. This NPN silicon planar switching transistor is used for switching, linear DC power supply and VHF amplifier applications. • Collector emitter breakdo...
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BSH205G2R
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SC16811 |
Power MOSFET, P Channel, 20 V, 2 A, 0.17 ohm, TO-236AB, Surface Mount NEXPERIA The BSH205G2 is a P-channel MOSFET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, high-side load switch and switching circuit applications. • Low threshold voltage • Low ON-...
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FDN357N
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SC11040 |
Power MOSFET, N Channel, 30 V, 2.5 A, 0.06 ohm, SOT-23, Surface Mount ONSEMI The FDN357N is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage...
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BS170
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SC06956 |
Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, TO-92, Through Hole ONSEMI The BS170 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...
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SI3456DDV-T1-GE3
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SC21595 |
Power MOSFET, N Channel, 30 V, 6.3 A, 0.04 ohm, TSOP, Surface Mount VISHAY The SI3456DDV-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch, HDD and DC-to-DC converter applications. • Halogen-free • -55 to 150°C Operating temperature range
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BF256B
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SC15912 |
JFET Transistor, JFET, -30V, 6mA, 13mA, -8 V, TO-92 ONSEMI The BF256B is a N-channel JFET Transistor for RF/VHF/UHF amplifiers. • 350mW Power Dissipation
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2N3906
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SC08424 |
Transistor, PNP, TO92 MULTICOMP PRO The 2N3906 from Multicomp Pro is a through hole, PNP low power, silicon planar switching transistors in TO-92 metal can package. This transistor features fast switching, hence is suitable for switching and amplification. • Collector emitter voltage (Vce) o...
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ULN2803A
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SC08607 |
Darlington Array 8 NPN, 2803, DIP18 STMICROELECTRONICS The ULN2803A is an eight darlington array in 18 pin DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features a peak load current rating of 600mA (500mA conti...
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MRF300BN
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SC15951 |
RF FET Transistor, 133V, 272W, 1.8MHz, 250MHz, TO-247 NXP These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical applications and HF and VHF communications as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Their unmatched input and...
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PMV30UN2R
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SC21452 |
Power MOSFET, N Channel, 20 V, 5.4 A, 0.032 ohm, SOT-23, Surface Mount NEXPERIA The PMV30UN2 is a N-channel enhancement mode Field-effect Transistor (FET) in a small surface-mounted device (SMD) plastic package using Trench MOSFET technology. Enhanced power dissipation capability of 1000mW. • Low threshold voltage • Very fast switchin...
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FDN360P
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SC07006 |
Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount ONSEMI The FDN360P is a surface mount, single P channel PowerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is well suited...
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IRF830APBF
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SC11087 |
Power MOSFET, N Channel, 500 V, 5 A, 1.4 ohm, TO-220AB, Through Hole VISHAY The IRF830APBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS, uninterruptable power supply and high speed power switching. • Dyn...
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IRF730PBF
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SC16902 |
N Channel Power MOSFET, 400V, 5.5A, 1 Ohm, TO-220AB VISHAY • Dynamic dV/dt rating • Repetitive avalanche rated • 150°C Operating temperature • Easy to parallel • Simple drive requirement
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BC817-25
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SC16054 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 310mW, SOT-23, SMD DIODES INC. BC817-25 is a NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. • Collector-emitter voltage is 45V (open base, Tamb = 25°C), collector current is 500mA (Tamb = 25°C) • Peak collector current is 1A (sin...
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BDV66B
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SC06868 |
Darlington Transistor, TO247 MULTICOMP PRO The BDV66B is a -100V Silicon PNP Complementary Darlington Power Transistor having monolithic construction with built-in base-emitter shunt resistor. • Collector-emitter sustaining voltage (Vceo (sus) = 100V minimum) • Collector-emitter saturation voltage(...
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MMUN2111LT1G
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SC10965 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 10 kohm, 10 kohm ONSEMI The MMUN2111LT1G is a PNP Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...
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