Transistors
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Transistors
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Transistors
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Diodes | Thyristors, DIACS & TRIACS | Npn Transistors | Pnp Transistors | Photo Transistors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Power Dissipation | Transistor Case Style | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ULN2003AINSR
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SC18106 |
High Voltage, High Current Darlington Transistor Arrays, Bipolar, NPN, 50V, 500mA, SOP TEXAS INSTRUMENTS High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...
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FDP5800
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SC16966 |
Power MOSFET, N Channel, 60 V, 80 A, 0.006 ohm, TO-220, Through Hole ONSEMI The FDP5800 is a N-channel MOSFET produced using advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification, battery protecti...
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N Channel | 60V | 80A | 242mW | TO-220 | 0.006ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMP3056L-7
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SC15968 |
Power MOSFET, P Channel, 30V, 4.3A, 0.035 Ohm, SOT-23, SMD DIODES INC. DMP3056L-7 is a P-channel enhancement mode MOSFET. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • ...
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P Channel | 30V | 4.3A | 1.38W | SOT-23 | 0.05ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHG20N50C-E3
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SC15833 |
Power MOSFET, N Channel, 500V, 20A, 0.225 ohm, TO-247 VISHAY The SIHG20N50C-E3 is a 500V N-channel Power MOSFET with high power dissipation and high peak current capability. • Halogen-free according to IEC 61249-2-21 definition • Low figure of merit Ron X Qg • 100% Avalanche rated • dV/dt Ruggedness • Improved Trr/Q...
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N Channel | 500V | 20A | 292W | TO-247 | 0.27ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N7002BK,215
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SC15984 |
Power MOSFET, N Channel, 60V, 350mA, 1 Ohm, SOT-23, SMD NEXPERIA The 2N7002BK is a N-channel enhancement mode Field-Effect Transistor (FET) in surface-mounted plastic package using Trench MOSFET technology. Suitable for high-speed line driver, low-side loadswitch and switching circuits. • Logic-level compatible • Very f...
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N Channel | 60V | 350mA | 440mW | SOT-23 | 1.6ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN5630
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SC16780 |
Power MOSFET, N Channel, 60 V, 1.7 A, 0.1 ohm, SuperSOT, Surface Mount ONSEMI The FDN5630 is a 60V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combin...
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N Channel | 60V | 1.7A | 500mW | SuperSOT | 0.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N3904TA
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SC15823 |
Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92 ONSEMI The 2N3904 is a through hole, NPN general purpose transistor in TO-92 package which is designed for amplifier and switch application. The dynamic range of device extends to 100mA while operating as switch and it will be 100MHz for amplifier. • Collector to...
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- | - | - | 625mW | TO-92 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N1711
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SC15750 |
Bipolar (BJT) Single Transistor, NPN, 50V, 500mA, 3W, TO-39 MULTICOMP PRO Silicon planar epitaxial NPN transistor for use in high performance amplifier, oscillator and switching circuits. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers woul...
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- | - | - | 3W | TO-39 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF740PBF
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SC16909 |
Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole VISHAY The IRF740PBF is a 400V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • 175°C Ope...
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N Channel | 400V | 10A | 125W | TO-220AB | 0.55ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDA59N30
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SC16993 |
Power MOSFET, N Channel, 300 V, 59 A, 0.056 ohm, TO-3P, Through Hole ONSEMI The FDA59N30 is a 300V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This high voltage MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode'...
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N Channel | 300V | 59A | 500W | TO-3P | 0.056ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846BDW1T1G
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SC16123 |
Bipolar Transistor Array, Dual NPN, 65V, 100mA, 380mW, 200hFE, SOT-363 ONSEMI The BC846BDW1T1G is a NPN dual Transistor, designed for general purpose amplifier applications. Ideal for low power surface mount applications. • AEC-Q101 Qualified • PPAP capable • Halogen-free
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- | - | - | - | SOT-363 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS806NH6327XTSA1
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SC16851 |
Power MOSFET, N Channel, 20 V, 2.3 A, 0.057 ohm, SOT-23, Surface Mount INFINEON The BSS806N H6327 is a N-channel OptiMOS™2 enhancement-mode Small Signal Transistor offers 1.8V rated ultra logic level. • Halogen-free
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N Channel | 20V | 2.3A | 500mW | SOT-23 | 0.057ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD139-10
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SC15373 |
Bipolar Transistor, NPN, 80V, 1.5A, TO-126 MULTICOMP PRO The BD139-10 is a NPN Transistor with 80V collector-emitter voltage and 12.5W power dissipation. • Collector-base voltage(Vcbo = 100V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view...
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- | - | - | 12.5W | TO-126 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMP6A17E6TA
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SC16832 |
Power MOSFET, P Channel, 60 V, 3 A, 0.125 ohm, SOT-23, Surface Mount DIODES INC. The ZXMP6A17E6TA is a P-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin finish annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance and yet maintain sup...
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P Channel | 60V | 3A | 1.1W | SOT-23 | 0.125ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP250MPBF
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SC16971 |
Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through Hole INFINEON • Single N-channel HEXFET® power MOSFET • Advanced process technology • Fast switching • Fully avalanche rated • Dynamic dv/dt rating • Ease of paralleling • Simple drive requirements • Planar cell structure for wide SOA • Product qualification according ...
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N Channel | 200V | 30A | 214W | TO-247AC | 0.075ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VN2222LL-G
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SC15835 |
Power MOSFET, N Channel, 60V, 230mA, 7.5 ohm, TO-92 MICROCHIP • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 230mA • Power Dissipation : 1W • Transistor Case Style : TO-92 • Drain Source On State Resistance : 7.5ohm
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N Channel | 60V | 230mA | 1W | TO-92 | 7.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF530A
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SC16916 |
Power MOSFET, N Channel, 100 V, 14 A, 0.11 ohm, TO-220, Through Hole ONSEMI The IRF530A is a 100V N-channel Advanced Power MOSFET featured with avalanche rugged technology and rugged gate oxide technology. It has lower input capacitance and improved gate charge. • Extended safe operating area • Lower leakage current (10A maximum a...
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N Channel | 100V | 14A | 55W | TO-220 | 0.11ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD19537Q3T
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SC16995 |
SMD N Channel Power MOSFET, 100V, 50A, 0.0121 Ohm, VSON TEXAS INSTRUMENTS • Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 50A • Power Dissipation : 83W • Transistor Case Style : VSON • Drain Source On State Resistance : 0.0145ohm
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N Channel | 100V | 50A | 83W | VSON | 0.0145ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS250P
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SC16888 |
P Channel Power MOSFET, 45V, 230mA, 14 Ohm, E-Line DIODES INC. BS250P is a P-channel enhancement mode vertical DMOS FET. • Drain-source breakdown voltage is -45V at ID=-100µA, VGS=0V, TA=+25°C • Gate-source threshold voltage is -3.5V at ID=-1mA, VDS=VGS, TA=+25°C • Zero gate voltage drain current is -500nA max VGS=0V,...
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P Channel | 45V | 230mA | 700mW | E-Line | 14ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMS6004FFTA
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SC16713 |
Power MOSFET, N Channel, 60 V, 2 A, 0.5 ohm, SOT-23F, Surface Mount DIODES INC. ZXMS6004FFTA is an INTELLIFET™ N-channel self protected enhancement mode MOSFET with logic level input. It integrates over-temperature, over-current, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6004FF is ideal as a gener...
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N Channel | 60V | 2A | 830mW | SOT-23F | 0.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI7850DP-T1-E3
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SC16843 |
Power MOSFET, N Channel, 60 V, 10.3 A, 0.022 ohm, PowerPAK SO, Surface Mount VISHAY The SI7850DP-T1-E3 is a 60V N-channel fast switching TrenchFET® Power MOSFET with low thermal resistance and low 1.07mm profile. Suitable for secondary synchronous rectifier and primary side switch for 24VDC/DC applications. • ±20V Gate-source voltage • Ha...
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N Channel | 60V | 10.3A | 1.8W | PowerPAK SO | 0.022ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDP2532
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SC16972 |
N Channel Power MOSFET, PowerTrench, 150V, 79A, 0.014 Ohm, TO-220AB ONSEMI • Low miller charge • Low Qrr body diode • UIS Capability (single pulse and repetitive pulse)
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N Channel | 150V | 79A | 310W | TO-220AB | 0.016ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC32740BU
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SC15779 |
Bipolar (BJT) Single Transistor, PNP, -45V, -800mA, 625mW, TO-92 ONSEMI The BC32740BU is a PNP Epitaxial Silicon Transistor suitable for AF-driver stages, low-power output stages, switching and amplifier applications. • Complement to BC337
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- | - | - | 625mW | TO-92 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC557BTA
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SC15789 |
Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 500mW, TO-92 ONSEMI The BC557BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Complement to BC547
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- | - | - | 500mW | TO-92 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS126H6327XTSA2
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SC16946 |
Power MOSFET, N Channel, 600 V, 21 mA, 500 ohm, SOT-23, Surface Mount INFINEON The BSS126 H6327 is a N-channel depletion-mode SIPMOS® Small-Signal-Transistor with 600VDS drain source voltage. Areas of application include power supply start-up power, overvoltage protection, in-rush-current limiter, off-line voltage reference. Also sui...
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N Channel | 600V | 21mA | 500mW | SOT-23 | 500ohm |