Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

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  Manufacturer Part No Order Code Description / Manufacturer
Availability Price For
Price Ex. VAT (Inc. VAT)
Quantity
Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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DMP3056L-7
DMP3056L-7 - Power MOSFET, P Channel, 30V, 4.3A, 0.035 Ohm, SOT-23, SMD

SC15968

Power MOSFET, P Channel, 30V, 4.3A, 0.035 Ohm, SOT-23, SMD

DIODES INC.

DMP3056L-7 is a P-channel enhancement mode MOSFET. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • ...

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P Channel 30V 4.3A 0.05ohm SOT-23 Surface Mount 10V 2.1V 1.38W 3Pins 150°C - -
2N7002BK,215
2N7002BK,215 - Power MOSFET, N Channel, 60V, 350mA, 1 Ohm, SOT-23, SMD

SC15984

Power MOSFET, N Channel, 60V, 350mA, 1 Ohm, SOT-23, SMD

NEXPERIA

The 2N7002BK is a N-channel enhancement mode Field-Effect Transistor (FET) in surface-mounted plastic package using Trench MOSFET technology. Suitable for high-speed line driver, low-side loadswitch and switching circuits. • Logic-level compatible • Very f...

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N Channel 60V 350mA 1.6ohm SOT-23 Surface Mount 10V 1.6V 440mW 3Pins 150°C - -
FDN5630
FDN5630 - Power MOSFET, N Channel, 60 V, 1.7 A, 0.1 ohm, SuperSOT, Surface Mount

SC16780

Power MOSFET, N Channel, 60 V, 1.7 A, 0.1 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN5630 is a 60V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combin...

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N Channel 60V 1.7A 0.1ohm SuperSOT Surface Mount 10V 2.4V 500mW 3Pins 150°C - -
2N3904TA
2N3904TA - Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92

SC15823

Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92

ONSEMI

The 2N3904 is a through hole, NPN general purpose transistor in TO-92 package which is designed for amplifier and switch application. The dynamic range of device extends to 100mA while operating as switch and it will be 100MHz for amplifier. • Collector to...

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- - - - TO-92 Through Hole - - 625mW 3Pins 150°C - -
2N1711
2N1711 - Bipolar (BJT) Single Transistor, NPN, 50V, 500mA, 3W, TO-39

SC15750

Bipolar (BJT) Single Transistor, NPN, 50V, 500mA, 3W, TO-39

MULTICOMP PRO

Silicon planar epitaxial NPN transistor for use in high performance amplifier, oscillator and switching circuits. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers woul...

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- - - - TO-39 Through Hole - - 3W 3Pins 200°C - -
IRF740PBF
IRF740PBF - Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole

SC16909

Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole

VISHAY

The IRF740PBF is a 400V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • 175°C Ope...

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N Channel 400V 10A 0.55ohm TO-220AB Through Hole 10V 4V 125W 3Pins 150°C - -
IRFPG50PBF
IRFPG50PBF - Power MOSFET, N Channel, 1 kV, 6 A, 2 ohm, TO-247AC, Through Hole

SC16978

Power MOSFET, N Channel, 1 kV, 6 A, 2 ohm, TO-247AC, Through Hole

VISHAY

The IRFPG50PBF is a 1000V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. It a...

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N Channel 1kV 6A 2ohm TO-247AC Through Hole 10V 4V 180W 3Pins 150°C - -
FDA59N30
FDA59N30 - Power MOSFET, N Channel, 300 V, 59 A, 0.056 ohm, TO-3P, Through Hole

SC16993

Power MOSFET, N Channel, 300 V, 59 A, 0.056 ohm, TO-3P, Through Hole

ONSEMI

The FDA59N30 is a 300V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This high voltage MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode'...

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N Channel 300V 59A 0.056ohm TO-3P Through Hole 10V 5V 500W 3Pins 150°C - -
BC846BDW1T1G
BC846BDW1T1G - Bipolar Transistor Array, Dual NPN, 65V, 100mA, 380mW, 200hFE, SOT-363

SC16123

Bipolar Transistor Array, Dual NPN, 65V, 100mA, 380mW, 200hFE, SOT-363

ONSEMI

The BC846BDW1T1G is a NPN dual Transistor, designed for general purpose amplifier applications. Ideal for low power surface mount applications. • AEC-Q101 Qualified • PPAP capable • Halogen-free

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- - - - SOT-363 Surface Mount - - - 6Pins 150°C BCxxx Series -
BSS806NH6327XTSA1
BSS806NH6327XTSA1 - Power MOSFET, N Channel, 20 V, 2.3 A, 0.057 ohm, SOT-23, Surface Mount

SC16851

Power MOSFET, N Channel, 20 V, 2.3 A, 0.057 ohm, SOT-23, Surface Mount

INFINEON

The BSS806N H6327 is a N-channel OptiMOS™2 enhancement-mode Small Signal Transistor offers 1.8V rated ultra logic level. • Halogen-free

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N Channel 20V 2.3A 0.057ohm SOT-23 Surface Mount 2.5V 550mV 500mW 3Pins 150°C - AEC-Q101
ZXMP6A17E6TA
ZXMP6A17E6TA - Power MOSFET, P Channel, 60 V, 3 A, 0.125 ohm, SOT-23, Surface Mount

SC16832

Power MOSFET, P Channel, 60 V, 3 A, 0.125 ohm, SOT-23, Surface Mount

DIODES INC.

The ZXMP6A17E6TA is a P-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin finish annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance and yet maintain sup...

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P Channel 60V 3A 0.125ohm SOT-23 Surface Mount 10V 3V 1.1W 6Pins 150°C - -
VN2222LL-G
VN2222LL-G - Power MOSFET, N Channel, 60V, 230mA, 7.5 ohm, TO-92

SC15835

Power MOSFET, N Channel, 60V, 230mA, 7.5 ohm, TO-92

MICROCHIP

• Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 230mA • Drain Source On State Resistance : 7.5ohm • Transistor Case Style : TO-92 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2.5V • Power Dissipation : 1W • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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N Channel 60V 230mA 7.5ohm TO-92 Through Hole 10V 2.5V 1W 3Pins 150°C - -
SI2305CDS-T1-GE3
SI2305CDS-T1-GE3 - Power MOSFET, P Channel, 8 V, 5.8 A, 0.035 ohm, SOT-23, Surface Mount

SC16725

Power MOSFET, P Channel, 8 V, 5.8 A, 0.035 ohm, SOT-23, Surface Mount

VISHAY

The SI2305CDS-T1-GE3 is a 8VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and DC-to-DC converter applications. • 100% Rg tested • -55 to 150°C Operating temperature range • Halogen-free

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P Channel 8V 5.8A 0.035ohm SOT-23 Surface Mount 4.5V 1V 1.7W 3Pins 150°C - -
IRF530A
IRF530A - Power MOSFET, N Channel, 100 V, 14 A, 0.11 ohm, TO-220, Through Hole

SC16916

Power MOSFET, N Channel, 100 V, 14 A, 0.11 ohm, TO-220, Through Hole

ONSEMI

The IRF530A is a 100V N-channel Advanced Power MOSFET featured with avalanche rugged technology and rugged gate oxide technology. It has lower input capacitance and improved gate charge. • Extended safe operating area • Lower leakage current (10A maximum a...

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N Channel 100V 14A 0.11ohm TO-220 Through Hole 10V 4V 55W 3Pins 175°C - -
CSD19537Q3T
CSD19537Q3T - SMD N Channel Power MOSFET, 100V, 50A, 0.0121 Ohm, VSON

SC16995

SMD N Channel Power MOSFET, 100V, 50A, 0.0121 Ohm, VSON

TEXAS INSTRUMENTS

• Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 50A • Drain Source On State Resistance : 0.0145ohm • Transistor Case Style : VSON • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3V • Power Dissipation : 83W • No. of Pins : 8Pins • Operating Temperature Max : 150°C

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N Channel 100V 50A 0.0145ohm VSON Surface Mount 10V 3V 83W 8Pins 150°C - -
ZXMS6004FFTA
ZXMS6004FFTA - Power MOSFET, N Channel, 60 V, 2 A, 0.5 ohm, SOT-23F, Surface Mount

SC16713

Power MOSFET, N Channel, 60 V, 2 A, 0.5 ohm, SOT-23F, Surface Mount

DIODES INC.

ZXMS6004FFTA is an INTELLIFET™ N-channel self protected enhancement mode MOSFET with logic level input. It integrates over-temperature, over-current, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6004FF is ideal as a gener...

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N Channel 60V 2A 0.5ohm SOT-23F Surface Mount 5V 1V 830mW 3Pins 150°C - -
SI7850DP-T1-E3
SI7850DP-T1-E3 - Power MOSFET, N Channel, 60 V, 10.3 A, 0.022 ohm, PowerPAK SO, Surface Mount

SC16843

Power MOSFET, N Channel, 60 V, 10.3 A, 0.022 ohm, PowerPAK SO, Surface Mount

VISHAY

The SI7850DP-T1-E3 is a 60V N-channel fast switching TrenchFET® Power MOSFET with low thermal resistance and low 1.07mm profile. Suitable for secondary synchronous rectifier and primary side switch for 24VDC/DC applications. • ±20V Gate-source voltage • Ha...

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N Channel 60V 10.3A 0.022ohm PowerPAK SO Surface Mount 10V 3V 1.8W 8Pins 150°C - -
BC557BTA
BC557BTA - Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 500mW, TO-92

SC15789

Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 500mW, TO-92

ONSEMI

The BC557BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Complement to BC547

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- - - - TO-92 Through Hole - - 500mW 3Pins 150°C - -
BSS126H6327XTSA2
BSS126H6327XTSA2 - Power MOSFET, N Channel, 600 V, 21 mA, 500 ohm, SOT-23, Surface Mount

SC16946

Power MOSFET, N Channel, 600 V, 21 mA, 500 ohm, SOT-23, Surface Mount

INFINEON

The BSS126 H6327 is a N-channel depletion-mode SIPMOS® Small-Signal-Transistor with 600VDS drain source voltage. Areas of application include power supply start-up power, overvoltage protection, in-rush-current limiter, off-line voltage reference. Also sui...

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N Channel 600V 21mA 500ohm SOT-23 Surface Mount 10V 2V 500mW 3Pins 150°C - AEC-Q101
ZXM61N02F
ZXM61N02F - Power MOSFET, N Channel, 20 V, 1.7 A, 0.18 ohm, SOT-23, Surface Mount

SC16913

Power MOSFET, N Channel, 20 V, 1.7 A, 0.18 ohm, SOT-23, Surface Mount

DIODES INC.

The ZXM61N02F is an N-channel Enhancement Mode MOSFET utilizes an unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage applications. • Low on-resistance • Fast sw...

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N Channel 20V 1.7A 0.18ohm SOT-23 Surface Mount 4.5V 700mV 625mW 3Pins 150°C - -
BSS84DW-7-F
BSS84DW-7-F - Dual MOSFET, P Channel, 50V, 130mA, 10 Ohm, SOT-363, SMD

SC16803

Dual MOSFET, P Channel, 50V, 130mA, 10 Ohm, SOT-363, SMD

DIODES INC.

The BSS84DW-7-F is a dual P-channel enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for general purpose interfacing switch and analogue switch applications. • L...

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P Channel - - - SOT-363 - - - - 6Pins 150°C - -
IRFP140NPBF
IRFP140NPBF - Power MOSFET, HEXFET, N Channel, 100 V, 33 A, 0.052 ohm, TO-247AC, Through Hole

SC16983

Power MOSFET, HEXFET, N Channel, 100 V, 33 A, 0.052 ohm, TO-247AC, Through Hole

INFINEON

The IRFP140NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated

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N Channel 100V 33A 0.052ohm TO-247AC Through Hole 10V 4V 94W 3Pins 175°C - -
PDTC114YT,215
PDTC114YT,215 - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10 kohm, 47 kohm

SC15941

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10 kohm, 47 kohm

NEXPERIA

The PDTC114YT is a 10 to 47kΩ NPN Resistor Equipped Transistor (RET) in a small surface-mount plastic package. • Reduces component count • Built-in bias resistors • Reduces pick and place costs • Simplifies circuit design • AEC-Q101 qualified • PNP complem...

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- - - - SOT-23 Surface Mount - - 250mW - 150°C PDTC114Y Series -
SPP17N80C3XKSA1
SPP17N80C3XKSA1 - Power MOSFET, N Channel, 800 V, 17 A, 0.29 ohm, TO-220, Through Hole

SC16976

Power MOSFET, N Channel, 800 V, 17 A, 0.29 ohm, TO-220, Through Hole

INFINEON

The SPP17N80C3 is a 800V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is designed for high DC bulk voltage and switching applications. • New revolutionary high voltage technology • Extreme dV/dt rated • High peak current capability •...

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N Channel 800V 17A 0.29ohm TO-220 Through Hole 10V 3V 227W 3Pins 150°C - -
SI2301CDS-T1-E3
SI2301CDS-T1-E3 - Power MOSFET, P Channel, 20 V, 3.1 A, 0.112 ohm, SOT-23, Surface Mount

SC16887

Power MOSFET, P Channel, 20 V, 3.1 A, 0.112 ohm, SOT-23, Surface Mount

VISHAY

Si2301CDS-T1-E3 is a P-channel 20V (D-S) MOSFET. The applications include a load switch. • TrenchFET® Power MOSFET • Drain-source breakdown voltage is -20V min (VGS = 0V, ID = - 250µA, TJ = 25°C) • Gate-source threshold voltage range from -0.4 to 1V (VDS =...

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P Channel 20V 3.1A 0.112ohm SOT-23 Surface Mount 2.5V 400mV 1.6W 3Pins 150°C - -