Transistors
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Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP3056L-7
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SC15968 |
Power MOSFET, P Channel, 30V, 4.3A, 0.035 Ohm, SOT-23, SMD DIODES INC. DMP3056L-7 is a P-channel enhancement mode MOSFET. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • ...
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P Channel | 30V | 4.3A | 0.05ohm | SOT-23 | Surface Mount | 10V | 2.1V | 1.38W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N7002BK,215
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SC15984 |
Power MOSFET, N Channel, 60V, 350mA, 1 Ohm, SOT-23, SMD NEXPERIA The 2N7002BK is a N-channel enhancement mode Field-Effect Transistor (FET) in surface-mounted plastic package using Trench MOSFET technology. Suitable for high-speed line driver, low-side loadswitch and switching circuits. • Logic-level compatible • Very f...
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N Channel | 60V | 350mA | 1.6ohm | SOT-23 | Surface Mount | 10V | 1.6V | 440mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDN5630
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SC16780 |
Power MOSFET, N Channel, 60 V, 1.7 A, 0.1 ohm, SuperSOT, Surface Mount ONSEMI The FDN5630 is a 60V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combin...
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N Channel | 60V | 1.7A | 0.1ohm | SuperSOT | Surface Mount | 10V | 2.4V | 500mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N3904TA
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SC15823 |
Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92 ONSEMI The 2N3904 is a through hole, NPN general purpose transistor in TO-92 package which is designed for amplifier and switch application. The dynamic range of device extends to 100mA while operating as switch and it will be 100MHz for amplifier. • Collector to...
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- | - | - | - | TO-92 | Through Hole | - | - | 625mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N1711
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SC15750 |
Bipolar (BJT) Single Transistor, NPN, 50V, 500mA, 3W, TO-39 MULTICOMP PRO Silicon planar epitaxial NPN transistor for use in high performance amplifier, oscillator and switching circuits. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers woul...
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- | - | - | - | TO-39 | Through Hole | - | - | 3W | 3Pins | 200°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF740PBF
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SC16909 |
Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole VISHAY The IRF740PBF is a 400V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • 175°C Ope...
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N Channel | 400V | 10A | 0.55ohm | TO-220AB | Through Hole | 10V | 4V | 125W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFPG50PBF
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SC16978 |
Power MOSFET, N Channel, 1 kV, 6 A, 2 ohm, TO-247AC, Through Hole VISHAY The IRFPG50PBF is a 1000V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. It a...
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N Channel | 1kV | 6A | 2ohm | TO-247AC | Through Hole | 10V | 4V | 180W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDA59N30
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SC16993 |
Power MOSFET, N Channel, 300 V, 59 A, 0.056 ohm, TO-3P, Through Hole ONSEMI The FDA59N30 is a 300V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This high voltage MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode'...
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N Channel | 300V | 59A | 0.056ohm | TO-3P | Through Hole | 10V | 5V | 500W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846BDW1T1G
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SC16123 |
Bipolar Transistor Array, Dual NPN, 65V, 100mA, 380mW, 200hFE, SOT-363 ONSEMI The BC846BDW1T1G is a NPN dual Transistor, designed for general purpose amplifier applications. Ideal for low power surface mount applications. • AEC-Q101 Qualified • PPAP capable • Halogen-free
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- | - | - | - | SOT-363 | Surface Mount | - | - | - | 6Pins | 150°C | BCxxx Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS806NH6327XTSA1
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SC16851 |
Power MOSFET, N Channel, 20 V, 2.3 A, 0.057 ohm, SOT-23, Surface Mount INFINEON The BSS806N H6327 is a N-channel OptiMOS™2 enhancement-mode Small Signal Transistor offers 1.8V rated ultra logic level. • Halogen-free
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N Channel | 20V | 2.3A | 0.057ohm | SOT-23 | Surface Mount | 2.5V | 550mV | 500mW | 3Pins | 150°C | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMP6A17E6TA
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SC16832 |
Power MOSFET, P Channel, 60 V, 3 A, 0.125 ohm, SOT-23, Surface Mount DIODES INC. The ZXMP6A17E6TA is a P-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin finish annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance and yet maintain sup...
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P Channel | 60V | 3A | 0.125ohm | SOT-23 | Surface Mount | 10V | 3V | 1.1W | 6Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VN2222LL-G
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SC15835 |
Power MOSFET, N Channel, 60V, 230mA, 7.5 ohm, TO-92 MICROCHIP • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 230mA • Drain Source On State Resistance : 7.5ohm • Transistor Case Style : TO-92 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2.5V • Power Dissipation : 1W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 60V | 230mA | 7.5ohm | TO-92 | Through Hole | 10V | 2.5V | 1W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2305CDS-T1-GE3
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SC16725 |
Power MOSFET, P Channel, 8 V, 5.8 A, 0.035 ohm, SOT-23, Surface Mount VISHAY The SI2305CDS-T1-GE3 is a 8VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and DC-to-DC converter applications. • 100% Rg tested • -55 to 150°C Operating temperature range • Halogen-free
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P Channel | 8V | 5.8A | 0.035ohm | SOT-23 | Surface Mount | 4.5V | 1V | 1.7W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF530A
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SC16916 |
Power MOSFET, N Channel, 100 V, 14 A, 0.11 ohm, TO-220, Through Hole ONSEMI The IRF530A is a 100V N-channel Advanced Power MOSFET featured with avalanche rugged technology and rugged gate oxide technology. It has lower input capacitance and improved gate charge. • Extended safe operating area • Lower leakage current (10A maximum a...
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N Channel | 100V | 14A | 0.11ohm | TO-220 | Through Hole | 10V | 4V | 55W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD19537Q3T
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SC16995 |
SMD N Channel Power MOSFET, 100V, 50A, 0.0121 Ohm, VSON TEXAS INSTRUMENTS • Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 50A • Drain Source On State Resistance : 0.0145ohm • Transistor Case Style : VSON • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3V • Power Dissipation : 83W • No. of Pins : 8Pins • Operating Temperature Max : 150°C
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N Channel | 100V | 50A | 0.0145ohm | VSON | Surface Mount | 10V | 3V | 83W | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMS6004FFTA
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SC16713 |
Power MOSFET, N Channel, 60 V, 2 A, 0.5 ohm, SOT-23F, Surface Mount DIODES INC. ZXMS6004FFTA is an INTELLIFET™ N-channel self protected enhancement mode MOSFET with logic level input. It integrates over-temperature, over-current, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6004FF is ideal as a gener...
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N Channel | 60V | 2A | 0.5ohm | SOT-23F | Surface Mount | 5V | 1V | 830mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI7850DP-T1-E3
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SC16843 |
Power MOSFET, N Channel, 60 V, 10.3 A, 0.022 ohm, PowerPAK SO, Surface Mount VISHAY The SI7850DP-T1-E3 is a 60V N-channel fast switching TrenchFET® Power MOSFET with low thermal resistance and low 1.07mm profile. Suitable for secondary synchronous rectifier and primary side switch for 24VDC/DC applications. • ±20V Gate-source voltage • Ha...
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N Channel | 60V | 10.3A | 0.022ohm | PowerPAK SO | Surface Mount | 10V | 3V | 1.8W | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC557BTA
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SC15789 |
Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 500mW, TO-92 ONSEMI The BC557BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Complement to BC547
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- | - | - | - | TO-92 | Through Hole | - | - | 500mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS126H6327XTSA2
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SC16946 |
Power MOSFET, N Channel, 600 V, 21 mA, 500 ohm, SOT-23, Surface Mount INFINEON The BSS126 H6327 is a N-channel depletion-mode SIPMOS® Small-Signal-Transistor with 600VDS drain source voltage. Areas of application include power supply start-up power, overvoltage protection, in-rush-current limiter, off-line voltage reference. Also sui...
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N Channel | 600V | 21mA | 500ohm | SOT-23 | Surface Mount | 10V | 2V | 500mW | 3Pins | 150°C | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXM61N02F
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SC16913 |
Power MOSFET, N Channel, 20 V, 1.7 A, 0.18 ohm, SOT-23, Surface Mount DIODES INC. The ZXM61N02F is an N-channel Enhancement Mode MOSFET utilizes an unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage applications. • Low on-resistance • Fast sw...
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N Channel | 20V | 1.7A | 0.18ohm | SOT-23 | Surface Mount | 4.5V | 700mV | 625mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS84DW-7-F
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SC16803 |
Dual MOSFET, P Channel, 50V, 130mA, 10 Ohm, SOT-363, SMD DIODES INC. The BSS84DW-7-F is a dual P-channel enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for general purpose interfacing switch and analogue switch applications. • L...
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P Channel | - | - | - | SOT-363 | - | - | - | - | 6Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP140NPBF
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SC16983 |
Power MOSFET, HEXFET, N Channel, 100 V, 33 A, 0.052 ohm, TO-247AC, Through Hole INFINEON The IRFP140NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated
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N Channel | 100V | 33A | 0.052ohm | TO-247AC | Through Hole | 10V | 4V | 94W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PDTC114YT,215
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SC15941 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10 kohm, 47 kohm NEXPERIA The PDTC114YT is a 10 to 47kΩ NPN Resistor Equipped Transistor (RET) in a small surface-mount plastic package. • Reduces component count • Built-in bias resistors • Reduces pick and place costs • Simplifies circuit design • AEC-Q101 qualified • PNP complem...
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- | - | - | - | SOT-23 | Surface Mount | - | - | 250mW | - | 150°C | PDTC114Y Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPP17N80C3XKSA1
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SC16976 |
Power MOSFET, N Channel, 800 V, 17 A, 0.29 ohm, TO-220, Through Hole INFINEON The SPP17N80C3 is a 800V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is designed for high DC bulk voltage and switching applications. • New revolutionary high voltage technology • Extreme dV/dt rated • High peak current capability •...
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N Channel | 800V | 17A | 0.29ohm | TO-220 | Through Hole | 10V | 3V | 227W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2301CDS-T1-E3
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SC16887 |
Power MOSFET, P Channel, 20 V, 3.1 A, 0.112 ohm, SOT-23, Surface Mount VISHAY Si2301CDS-T1-E3 is a P-channel 20V (D-S) MOSFET. The applications include a load switch. • TrenchFET® Power MOSFET • Drain-source breakdown voltage is -20V min (VGS = 0V, ID = - 250µA, TJ = 25°C) • Gate-source threshold voltage range from -0.4 to 1V (VDS =...
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P Channel | 20V | 3.1A | 0.112ohm | SOT-23 | Surface Mount | 2.5V | 400mV | 1.6W | 3Pins | 150°C | - | - |