Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Power Dissipation Transistor Case Style Drain Source On State Resistance
 
 
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ULN2003AINSR
ULN2003AINSR - High Voltage, High Current Darlington Transistor Arrays, Bipolar, NPN, 50V, 500mA, SOP

SC18106

High Voltage, High Current Darlington Transistor Arrays, Bipolar, NPN, 50V, 500mA, SOP

TEXAS INSTRUMENTS

High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...

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FDP5800
FDP5800 - Power MOSFET, N Channel, 60 V, 80 A, 0.006 ohm, TO-220, Through Hole

SC16966

Power MOSFET, N Channel, 60 V, 80 A, 0.006 ohm, TO-220, Through Hole

ONSEMI

The FDP5800 is a N-channel MOSFET produced using advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification, battery protecti...

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N Channel 60V 80A 242mW TO-220 0.006ohm
DMP3056L-7
DMP3056L-7 - Power MOSFET, P Channel, 30V, 4.3A, 0.035 Ohm, SOT-23, SMD

SC15968

Power MOSFET, P Channel, 30V, 4.3A, 0.035 Ohm, SOT-23, SMD

DIODES INC.

DMP3056L-7 is a P-channel enhancement mode MOSFET. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • ...

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P Channel 30V 4.3A 1.38W SOT-23 0.05ohm
SIHG20N50C-E3
SIHG20N50C-E3 - Power MOSFET, N Channel, 500V, 20A, 0.225 ohm, TO-247

SC15833

Power MOSFET, N Channel, 500V, 20A, 0.225 ohm, TO-247

VISHAY

The SIHG20N50C-E3 is a 500V N-channel Power MOSFET with high power dissipation and high peak current capability. • Halogen-free according to IEC 61249-2-21 definition • Low figure of merit Ron X Qg • 100% Avalanche rated • dV/dt Ruggedness • Improved Trr/Q...

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N Channel 500V 20A 292W TO-247 0.27ohm
2N7002BK,215
2N7002BK,215 - Power MOSFET, N Channel, 60V, 350mA, 1 Ohm, SOT-23, SMD

SC15984

Power MOSFET, N Channel, 60V, 350mA, 1 Ohm, SOT-23, SMD

NEXPERIA

The 2N7002BK is a N-channel enhancement mode Field-Effect Transistor (FET) in surface-mounted plastic package using Trench MOSFET technology. Suitable for high-speed line driver, low-side loadswitch and switching circuits. • Logic-level compatible • Very f...

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N Channel 60V 350mA 440mW SOT-23 1.6ohm
FDN5630
FDN5630 - Power MOSFET, N Channel, 60 V, 1.7 A, 0.1 ohm, SuperSOT, Surface Mount

SC16780

Power MOSFET, N Channel, 60 V, 1.7 A, 0.1 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN5630 is a 60V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combin...

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N Channel 60V 1.7A 500mW SuperSOT 0.1ohm
2N3904TA
2N3904TA - Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92

SC15823

Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92

ONSEMI

The 2N3904 is a through hole, NPN general purpose transistor in TO-92 package which is designed for amplifier and switch application. The dynamic range of device extends to 100mA while operating as switch and it will be 100MHz for amplifier. • Collector to...

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- - - 625mW TO-92 -
2N1711
2N1711 - Bipolar (BJT) Single Transistor, NPN, 50V, 500mA, 3W, TO-39

SC15750

Bipolar (BJT) Single Transistor, NPN, 50V, 500mA, 3W, TO-39

MULTICOMP PRO

Silicon planar epitaxial NPN transistor for use in high performance amplifier, oscillator and switching circuits. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers woul...

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- - - 3W TO-39 -
IRF740PBF
IRF740PBF - Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole

SC16909

Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole

VISHAY

The IRF740PBF is a 400V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • 175°C Ope...

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N Channel 400V 10A 125W TO-220AB 0.55ohm
FDA59N30
FDA59N30 - Power MOSFET, N Channel, 300 V, 59 A, 0.056 ohm, TO-3P, Through Hole

SC16993

Power MOSFET, N Channel, 300 V, 59 A, 0.056 ohm, TO-3P, Through Hole

ONSEMI

The FDA59N30 is a 300V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This high voltage MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode'...

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N Channel 300V 59A 500W TO-3P 0.056ohm
BC846BDW1T1G
BC846BDW1T1G - Bipolar Transistor Array, Dual NPN, 65V, 100mA, 380mW, 200hFE, SOT-363

SC16123

Bipolar Transistor Array, Dual NPN, 65V, 100mA, 380mW, 200hFE, SOT-363

ONSEMI

The BC846BDW1T1G is a NPN dual Transistor, designed for general purpose amplifier applications. Ideal for low power surface mount applications. • AEC-Q101 Qualified • PPAP capable • Halogen-free

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- - - - SOT-363 -
BSS806NH6327XTSA1
BSS806NH6327XTSA1 - Power MOSFET, N Channel, 20 V, 2.3 A, 0.057 ohm, SOT-23, Surface Mount

SC16851

Power MOSFET, N Channel, 20 V, 2.3 A, 0.057 ohm, SOT-23, Surface Mount

INFINEON

The BSS806N H6327 is a N-channel OptiMOS™2 enhancement-mode Small Signal Transistor offers 1.8V rated ultra logic level. • Halogen-free

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N Channel 20V 2.3A 500mW SOT-23 0.057ohm
BD139-10
BD139-10 - Bipolar Transistor, NPN, 80V, 1.5A, TO-126

SC15373

Bipolar Transistor, NPN, 80V, 1.5A, TO-126

MULTICOMP PRO

The BD139-10 is a NPN Transistor with 80V collector-emitter voltage and 12.5W power dissipation. • Collector-base voltage(Vcbo = 100V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view...

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- - - 12.5W TO-126 -
ZXMP6A17E6TA
ZXMP6A17E6TA - Power MOSFET, P Channel, 60 V, 3 A, 0.125 ohm, SOT-23, Surface Mount

SC16832

Power MOSFET, P Channel, 60 V, 3 A, 0.125 ohm, SOT-23, Surface Mount

DIODES INC.

The ZXMP6A17E6TA is a P-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin finish annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance and yet maintain sup...

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P Channel 60V 3A 1.1W SOT-23 0.125ohm
IRFP250MPBF
IRFP250MPBF - Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through Hole

SC16971

Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through Hole

INFINEON

• Single N-channel HEXFET® power MOSFET • Advanced process technology • Fast switching • Fully avalanche rated • Dynamic dv/dt rating • Ease of paralleling • Simple drive requirements • Planar cell structure for wide SOA • Product qualification according ...

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N Channel 200V 30A 214W TO-247AC 0.075ohm
VN2222LL-G
VN2222LL-G - Power MOSFET, N Channel, 60V, 230mA, 7.5 ohm, TO-92

SC15835

Power MOSFET, N Channel, 60V, 230mA, 7.5 ohm, TO-92

MICROCHIP

• Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 230mA • Power Dissipation : 1W • Transistor Case Style : TO-92 • Drain Source On State Resistance : 7.5ohm

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N Channel 60V 230mA 1W TO-92 7.5ohm
IRF530A
IRF530A - Power MOSFET, N Channel, 100 V, 14 A, 0.11 ohm, TO-220, Through Hole

SC16916

Power MOSFET, N Channel, 100 V, 14 A, 0.11 ohm, TO-220, Through Hole

ONSEMI

The IRF530A is a 100V N-channel Advanced Power MOSFET featured with avalanche rugged technology and rugged gate oxide technology. It has lower input capacitance and improved gate charge. • Extended safe operating area • Lower leakage current (10A maximum a...

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N Channel 100V 14A 55W TO-220 0.11ohm
CSD19537Q3T
CSD19537Q3T - SMD N Channel Power MOSFET, 100V, 50A, 0.0121 Ohm, VSON

SC16995

SMD N Channel Power MOSFET, 100V, 50A, 0.0121 Ohm, VSON

TEXAS INSTRUMENTS

• Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 50A • Power Dissipation : 83W • Transistor Case Style : VSON • Drain Source On State Resistance : 0.0145ohm

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N Channel 100V 50A 83W VSON 0.0145ohm
BS250P
BS250P - P Channel Power MOSFET, 45V, 230mA, 14 Ohm, E-Line

SC16888

P Channel Power MOSFET, 45V, 230mA, 14 Ohm, E-Line

DIODES INC.

BS250P is a P-channel enhancement mode vertical DMOS FET. • Drain-source breakdown voltage is -45V at ID=-100µA, VGS=0V, TA=+25°C • Gate-source threshold voltage is -3.5V at ID=-1mA, VDS=VGS, TA=+25°C • Zero gate voltage drain current is -500nA max VGS=0V,...

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P Channel 45V 230mA 700mW E-Line 14ohm
ZXMS6004FFTA
ZXMS6004FFTA - Power MOSFET, N Channel, 60 V, 2 A, 0.5 ohm, SOT-23F, Surface Mount

SC16713

Power MOSFET, N Channel, 60 V, 2 A, 0.5 ohm, SOT-23F, Surface Mount

DIODES INC.

ZXMS6004FFTA is an INTELLIFET™ N-channel self protected enhancement mode MOSFET with logic level input. It integrates over-temperature, over-current, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6004FF is ideal as a gener...

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N Channel 60V 2A 830mW SOT-23F 0.5ohm
SI7850DP-T1-E3
SI7850DP-T1-E3 - Power MOSFET, N Channel, 60 V, 10.3 A, 0.022 ohm, PowerPAK SO, Surface Mount

SC16843

Power MOSFET, N Channel, 60 V, 10.3 A, 0.022 ohm, PowerPAK SO, Surface Mount

VISHAY

The SI7850DP-T1-E3 is a 60V N-channel fast switching TrenchFET® Power MOSFET with low thermal resistance and low 1.07mm profile. Suitable for secondary synchronous rectifier and primary side switch for 24VDC/DC applications. • ±20V Gate-source voltage • Ha...

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N Channel 60V 10.3A 1.8W PowerPAK SO 0.022ohm
FDP2532
FDP2532 - N Channel Power MOSFET, PowerTrench, 150V, 79A, 0.014 Ohm, TO-220AB

SC16972

N Channel Power MOSFET, PowerTrench, 150V, 79A, 0.014 Ohm, TO-220AB

ONSEMI

• Low miller charge • Low Qrr body diode • UIS Capability (single pulse and repetitive pulse)

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N Channel 150V 79A 310W TO-220AB 0.016ohm
BC32740BU
BC32740BU - Bipolar (BJT) Single Transistor, PNP, -45V, -800mA, 625mW, TO-92

SC15779

Bipolar (BJT) Single Transistor, PNP, -45V, -800mA, 625mW, TO-92

ONSEMI

The BC32740BU is a PNP Epitaxial Silicon Transistor suitable for AF-driver stages, low-power output stages, switching and amplifier applications. • Complement to BC337

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- - - 625mW TO-92 -
BC557BTA
BC557BTA - Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 500mW, TO-92

SC15789

Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 500mW, TO-92

ONSEMI

The BC557BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Complement to BC547

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- - - 500mW TO-92 -
BSS126H6327XTSA2
BSS126H6327XTSA2 - Power MOSFET, N Channel, 600 V, 21 mA, 500 ohm, SOT-23, Surface Mount

SC16946

Power MOSFET, N Channel, 600 V, 21 mA, 500 ohm, SOT-23, Surface Mount

INFINEON

The BSS126 H6327 is a N-channel depletion-mode SIPMOS® Small-Signal-Transistor with 600VDS drain source voltage. Areas of application include power supply start-up power, overvoltage protection, in-rush-current limiter, off-line voltage reference. Also sui...

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N Channel 600V 21mA 500mW SOT-23 500ohm