Transistors
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Transistors
Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.
Diodes | Thyristors, DIACS & TRIACS | Npn Transistors | Pnp Transistors | Photo Transistors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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MMUN2216LT1G
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SC10967 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 4.7 kohm ONSEMI The MMUN2216LT1G is a NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...
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BC817K-40VL
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SC15928 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 350mW, TO-236AB, SMD NEXPERIA
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IXFN80N50
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SC17017 |
MOSFET Transistor, N Channel, 80A, 10V, IXYS SEMICONDUCTOR The IXFN80N50 is a N-channel enhancement mode Power MOSFET features miniBLOC, with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated. • Fast intrinsic rectifier •...
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N Channel | 500V | 80A | 0.055ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC807-25LVL
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SC15933 |
Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, TO-236AB, SMD NEXPERIA
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BDV65BG
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SC06873 |
Darlington Transistor, SOT93 ONSEMI The BDV65BG is a 100V Silicon NPN Bipolar Darlington Plastic Power Transistor that can be used as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emitter shunt resistor. ...
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BC860C
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SC06603 |
Transistor, PNP SOT23 NXP The BC860C is a PNP general purpose Transistor with 3 leads, low current and voltage, plastic surface mount package. Designed for low noise input stages of audio frequency equipment. • Complement to BC850
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STP16NF06L..
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SC11129 |
Power MOSFET, N Channel, 60 V, 16 A, 0.07 ohm, TO-220, Through Hole STMICROELECTRONICS The STP16NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET is the latest development of STMicroelectronis unique Single Feature Size strip based process, it has high packing density...
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N Channel | 60V | 16A | 0.07ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQU17P06
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SC11064 |
Power MOSFET, P Channel, 60 V, 12 A, 0.11 ohm, TO-251AA, Through Hole ONSEMI The FQU17P06 is a P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high...
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P Channel | 60V | 12A | 0.11ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP30N06
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SC16931 |
Power MOSFET, N Channel, 60 V, 30 A, 0.04 ohm, TO-220AB, Through Hole ONSEMI The FQP30N06 is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performanc...
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N Channel | 60V | 30A | 0.04ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N4870.
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SC15371 |
Unijunction Transistor, 1.5A, 1µA, 5mA, TO-92 MULTICOMP PRO The 2N4870 is a PN Unijunction Transistor designed for use in pulse and timing circuits, sensing circuits as well as thyristor trigger circuits. • Power dissipation(Pd = 300mW) • Multicomp products are rated 4.6 out of 5 stars • 12 month limited warranty *...
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BUV48A
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SC06801 |
Transistor, NPN, TO247 MOSPEC
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MMUN2211LT1G
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SC19267 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10kohm, 1 (Ratio) ONSEMI The MMUN2211LT1G from On Semiconductor are NPN digital transistor in 3 pin SOT-23 (TO−236) package. Digital transistor is designed to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) contains a single trans...
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BSS138PW,115
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SC16000 |
Power MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-323, SMD NEXPERIA The BSS138PW is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic Level Compatible • Very Fast Switching • ESD Protection Upto 1.5kV • AEC-Q101 Qualified
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N Channel | 60V | 320mA | 1.6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PN2222ATA
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SC15759 |
Bipolar (BJT) Single Transistor, NPN, 40V, 1A , 625mW, TO-92 ONSEMI The PN2222ATA is a NPN Transistor for general purpose power amplifier and switch. • 200°C/W Thermal Resistance, Junction-to-Ambient
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IRF9540NPBF
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SC08221 |
Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole INFINEON The IRF9540NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to ...
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P Channel | 100V | 23A | 0.117ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPW17N80C3
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SC11162 |
Power MOSFET, N Channel, 800 V, 17 A, 0.29 ohm, TO-247, Through Hole INFINEON The SPW17N80C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, extreme dv/dt rated and periodic avalanche rated. • ±20V Gate-source voltage • 260°C Soldering temperature
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N Channel | 800V | 17A | 0.29ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ15025G
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SC06787 |
Transistor, PNP, TO3 ONSEMI The MJ15025G is a -250V Silicon PNP Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 400V) • Emitter-base voltage...
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TTIP41C
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SC06757 |
Transistor, NPN, TO220 MULTICOMP PRO
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BCW30
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SC06605 |
Transistor, PNP SOT23 NXP The BCW30 is a PNP General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • NPN complements are BCW31 and BCW32 • C2 Marking code
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FZT751
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SC10976 |
Transistor, PNP, SOT223 DIODES INC. The FZT751 is a PNP high performance Transistor with tin plated terminals and UL94V-0-flame rated moulded plastic case. Solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FZT651 • Level-1 per J-STD-020 moisture sensitivity • Gree...
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BC847A
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SC06586 |
Transistor, NPN SOT23 NXP
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BD437
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SC09319 |
Transistor, NPN, TO126 STMICROELECTRONICS The BD437 is a NPN silicon complementary epitaxial-base Power Transistor in a JEDEC plastic package. It is intended for use in medium power linear and switching applications. • PNP complementary type is BD438
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TIP142
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SC08145 |
Darlington Transistor, TO247 MULTICOMP PRO The TIP142 from Multicomp Pro are through hole, darlington transistor in TO-247(3P) package. This transistor is used for low speed switching and amplification. • Collector emitter voltage (Vce) of 100V • Continuous collector current (Ic) of 10A • Power dis...
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IRFP4568PBF
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SC11170 |
Power MOSFET, N Channel, 150 V, 171 A, 0.0059 ohm, TO-247AC, Through Hole INFINEON The IRFP4568PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...
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N Channel | 150V | 171A | 0.0059ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817-25
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SC06613 |
Transistor, NPN, SOT23 NXP
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