Transistors
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Transistors
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Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Power Dissipation | Transistor Case Style | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF1404PBF
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SC11147 |
Power MOSFET, N Channel, 40 V, 162 A, 0.004 ohm, TO-220AB, Through Hole INFINEON The IRF1404PBF is a 40V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated • ...
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N Channel | 40V | 162A | 200W | - | 0.004ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FQP12N60C
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SC11098 |
Power MOSFET, N Channel, 600 V, 12 A, 0.65 ohm, TO-220, Through Hole ONSEMI The FQP12N60C is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and wit...
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N Channel | 600V | 12A | 225W | TO-220 | 0.65ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC817-25
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SC06613 |
Transistor, NPN, SOT23 NXP • Power Dissipation : 250mW • Transistor Case Style : SOT-23
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- | - | - | 250mW | SOT-23 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCW60B
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SC06591 |
Transistor, NPN SOT23 NXP The BCW60B is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • AB marking code
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- | - | - | 250mW | SOT-23 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MJL1302AG
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SC06828 |
Transistor, PNP, TO264 ONSEMI The MJL1302AG is a -260V PNP Bipolar Complementary Power Transistor designed for use in high end consumer audio products and professional audio amplifiers such as theatre and stadium sound systems as well public address systems (PAs). • Exceptional safe op...
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- | - | - | 200W | TO-264 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP4110PBF
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SC11168 |
Power MOSFET, N Channel, 100 V, 120 A, 0.0045 ohm, TO-247AC, Through Hole INFINEON The IRFP4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...
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N Channel | 100V | 120A | 370W | - | 0.0045ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC177B
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SC06648 |
Transistor, PNP, TO18 MULTICOMP PRO The BC177B is a low power silicon planar epitaxial Bipolar Transistor with TO-18 metal can package. • 50V Collector-base voltage • 175°C/W Junction-to-case thermal resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty...
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- | - | - | 600mW | TO-18 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFU5305PBF
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SC11065 |
Power MOSFET, P Channel, 55 V, 22 A, 0.065 ohm, TO-251AA, Through Hole INFINEON • Single N-channel HEXFET® power MOSFET • Advanced process technology • Ultra low on-resistance • Fast switching • Fully avalanche rated • Dynamic dv/dt rating
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P Channel | 55V | 22A | 69W | - | 0.065ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZT658
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SC10987 |
Transistor, NPN, SOT223 DIODES INC. The FZT658 is a NPN silicon planar high voltage Bipolar Transistor offers 500mA high continuous current and less-than 250mV low saturation voltage VCE (SAT) @ 50mA. • UL94V-0 Flammability rating • 1A Peak pulse current • hFE<gt/>40 Specified up to 200mA fo...
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- | - | - | 2W | SOT-223 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SMBT2222A
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SC10624 |
Transistor, NPN, SOT23 INFINEON • Power Dissipation : 330mW • Transistor Case Style : SOT-23
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- | - | - | 330mW | SOT-23 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSX20
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SC06709 |
Transistor, NPN, TO18 MULTICOMP PRO The BSX20 is a 15V Silicon NPN Bipolar Planar Low Power Transistor designed for high speed saturated switching applications. • Collector-base voltage(Vcbo = 40V) • Emitter-base voltage(Vebo = 4.5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12...
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- | - | - | 360mW | TO-18 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BDX53C
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SC10998 |
Darlington Transistor, TO220 STMICROELECTRONICS The BDX53C from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar base island technology with monolithic darlington configuration. This transistor features good DC gain and ...
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- | - | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFU9014PBF
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SC11069 |
Power MOSFET, P Channel, 60 V, 5.6 A, 0.5 ohm, TO-251AA, Through Hole VISHAY The IRFU9014PBF is a P-channel Power MOSFET with combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching and ease of paralleling
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P Channel | 60V | 5.6A | 30W | TO-251AA | 0.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFD120PBF
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SC07021 |
Power MOSFET, N Channel, 100 V, 1.3 A, 0.27 ohm, DIP, Through Hole VISHAY The IRFD120PBF is a 100V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which c...
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N Channel | 100V | 1.3A | 1.3W | DIP | 0.27ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BF259MC
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SC06649 |
Transistor, NPN TO39 MULTICOMP PRO
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- | - | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N4033MC
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SC06641 |
Transistor, PNP TO39 MULTICOMP PRO
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- | - | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW20NM50FD
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SC11175 |
Power MOSFET, N Channel, 500 V, 20 A, 0.25 ohm, TO-247, Through Hole STMICROELECTRONICS The STW20NM50FD is a 500V N-channel FDmesh™ Power MOSFET with fast diode. The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast recovery body diode. It is therefore strongly recommended for bridge topologi...
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N Channel | 500V | 20A | 214W | TO-247 | 0.25ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLU024NPBF
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SC11074 |
Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-251AA, Through Hole INFINEON The IRLU024NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated •...
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N Channel | 55V | 17A | 46W | - | 0.065ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP23N50LPBF
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SC11180 |
Power MOSFET, N Channel, 500 V, 23 A, 0.235 ohm, TO-247AC, Through Hole VISHAY The IRFP23N50LPBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. Superfast body diode eliminates the need for external diodes in ZVS applications. Suitable for use in zero voltage switching SMPS, telecom and se...
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N Channel | 500V | 23A | 370W | TO-247AC | 0.235ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQA170N06.
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SC06320 |
Power MOSFET, N Channel, 60 V, 170 A, 0.0056 ohm, TO-3P, Through Hole ONSEMI • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 170A • Power Dissipation : 375W • Drain Source On State Resistance : 0.0056ohm
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N Channel | 60V | 170A | 375W | - | 0.0056ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD437
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SC13790 |
Transistor, NPN, TO126 MULTICOMP PRO The BD437 is a silicon NPN Bipolar Transistor intended for use in medium power linear and switching applications. • -65 to 150°C Junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Cond...
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- | - | - | 36W | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC848CLT1G
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SC14981 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 30 V, 100 MHz, 300 mW, 100 mA, 100 hFE ONSEMI The BC848CLT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Moisture sensitivity level-1 • AEC-Q101 qu...
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- | - | - | 300mW | SOT-23 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDP5800
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SC16966 |
Power MOSFET, N Channel, 60 V, 80 A, 0.006 ohm, TO-220, Through Hole ONSEMI The FDP5800 is a N-channel MOSFET produced using advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification, battery protecti...
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N Channel | 60V | 80A | 242mW | TO-220 | 0.006ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ULN2003AINSR
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SC18106 |
High Voltage, High Current Darlington Transistor Arrays, Bipolar, NPN, 50V, 500mA, SOP TEXAS INSTRUMENTS High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...
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- | - | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VNP20N07-E
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SC15832 |
Power MOSFET, N Channel, 80V, 10A, 0.05 ohm, TO-220 STMICROELECTRONICS The VNP20N07-E is a 70V Fully Auto Protected Power MOSFET made using VIPower technology intended for replacement of standard power MOSFETS in DC to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the c...
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N Channel | 80V | 10A | 83W | TO-220 | 0.05ohm |