Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

Diodes Thyristors, DIACS & TRIACS Npn Transistors Pnp Transistors Photo Transistors
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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Power Dissipation Transistor Case Style Drain Source On State Resistance
 
 
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IRF1404PBF
IRF1404PBF - Power MOSFET, N Channel, 40 V, 162 A, 0.004 ohm, TO-220AB, Through Hole

SC11147

Power MOSFET, N Channel, 40 V, 162 A, 0.004 ohm, TO-220AB, Through Hole

INFINEON

The IRF1404PBF is a 40V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated • ...

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N Channel 40V 162A 200W - 0.004ohm
FQP12N60C
FQP12N60C - Power MOSFET, N Channel, 600 V, 12 A, 0.65 ohm, TO-220, Through Hole

SC11098

Power MOSFET, N Channel, 600 V, 12 A, 0.65 ohm, TO-220, Through Hole

ONSEMI

The FQP12N60C is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and wit...

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N Channel 600V 12A 225W TO-220 0.65ohm
BC817-25
BC817-25 - Transistor, NPN, SOT23

SC06613

Transistor, NPN, SOT23

NXP

• Power Dissipation : 250mW • Transistor Case Style : SOT-23

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- - - 250mW SOT-23 -
BCW60B
BCW60B - Transistor, NPN SOT23

SC06591

Transistor, NPN SOT23

NXP

The BCW60B is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • AB marking code

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- - - 250mW SOT-23 -
MJL1302AG
MJL1302AG - Transistor, PNP, TO264

SC06828

Transistor, PNP, TO264

ONSEMI

The MJL1302AG is a -260V PNP Bipolar Complementary Power Transistor designed for use in high end consumer audio products and professional audio amplifiers such as theatre and stadium sound systems as well public address systems (PAs). • Exceptional safe op...

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- - - 200W TO-264 -
IRFP4110PBF
IRFP4110PBF - Power MOSFET, N Channel, 100 V, 120 A, 0.0045 ohm, TO-247AC, Through Hole

SC11168

Power MOSFET, N Channel, 100 V, 120 A, 0.0045 ohm, TO-247AC, Through Hole

INFINEON

The IRFP4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...

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N Channel 100V 120A 370W - 0.0045ohm
BC177B
BC177B - Transistor, PNP, TO18

SC06648

Transistor, PNP, TO18

MULTICOMP PRO

The BC177B is a low power silicon planar epitaxial Bipolar Transistor with TO-18 metal can package. • 50V Collector-base voltage • 175°C/W Junction-to-case thermal resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty...

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- - - 600mW TO-18 -
IRFU5305PBF
IRFU5305PBF - Power MOSFET, P Channel, 55 V, 22 A, 0.065 ohm, TO-251AA, Through Hole

SC11065

Power MOSFET, P Channel, 55 V, 22 A, 0.065 ohm, TO-251AA, Through Hole

INFINEON

• Single N-channel HEXFET® power MOSFET • Advanced process technology • Ultra low on-resistance • Fast switching • Fully avalanche rated • Dynamic dv/dt rating

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P Channel 55V 22A 69W - 0.065ohm
FZT658
FZT658 - Transistor, NPN, SOT223

SC10987

Transistor, NPN, SOT223

DIODES INC.

The FZT658 is a NPN silicon planar high voltage Bipolar Transistor offers 500mA high continuous current and less-than 250mV low saturation voltage VCE (SAT) @ 50mA. • UL94V-0 Flammability rating • 1A Peak pulse current • hFE<gt/>40 Specified up to 200mA fo...

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- - - 2W SOT-223 -
SMBT2222A
SMBT2222A - Transistor, NPN, SOT23

SC10624

Transistor, NPN, SOT23

INFINEON

• Power Dissipation : 330mW • Transistor Case Style : SOT-23

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- - - 330mW SOT-23 -
BSX20
BSX20 - Transistor, NPN, TO18

SC06709

Transistor, NPN, TO18

MULTICOMP PRO

The BSX20 is a 15V Silicon NPN Bipolar Planar Low Power Transistor designed for high speed saturated switching applications. • Collector-base voltage(Vcbo = 40V) • Emitter-base voltage(Vebo = 4.5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12...

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- - - 360mW TO-18 -
BDX53C
BDX53C - Darlington Transistor, TO220

SC10998

Darlington Transistor, TO220

STMICROELECTRONICS

The BDX53C from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar base island technology with monolithic darlington configuration. This transistor features good DC gain and ...

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IRFU9014PBF
IRFU9014PBF - Power MOSFET, P Channel, 60 V, 5.6 A, 0.5 ohm, TO-251AA, Through Hole

SC11069

Power MOSFET, P Channel, 60 V, 5.6 A, 0.5 ohm, TO-251AA, Through Hole

VISHAY

The IRFU9014PBF is a P-channel Power MOSFET with combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching and ease of paralleling

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P Channel 60V 5.6A 30W TO-251AA 0.5ohm
IRFD120PBF
IRFD120PBF - Power MOSFET, N Channel, 100 V, 1.3 A, 0.27 ohm, DIP, Through Hole

SC07021

Power MOSFET, N Channel, 100 V, 1.3 A, 0.27 ohm, DIP, Through Hole

VISHAY

The IRFD120PBF is a 100V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which c...

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N Channel 100V 1.3A 1.3W DIP 0.27ohm
BF259MC
BF259MC - Transistor, NPN TO39

SC06649

Transistor, NPN TO39

MULTICOMP PRO

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2N4033MC
2N4033MC - Transistor, PNP TO39

SC06641

Transistor, PNP TO39

MULTICOMP PRO

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STW20NM50FD
STW20NM50FD - Power MOSFET, N Channel, 500 V, 20 A, 0.25 ohm, TO-247, Through Hole

SC11175

Power MOSFET, N Channel, 500 V, 20 A, 0.25 ohm, TO-247, Through Hole

STMICROELECTRONICS

The STW20NM50FD is a 500V N-channel FDmesh™ Power MOSFET with fast diode. The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast recovery body diode. It is therefore strongly recommended for bridge topologi...

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N Channel 500V 20A 214W TO-247 0.25ohm
IRLU024NPBF
IRLU024NPBF - Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-251AA, Through Hole

SC11074

Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-251AA, Through Hole

INFINEON

The IRLU024NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated •...

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N Channel 55V 17A 46W - 0.065ohm
IRFP23N50LPBF
IRFP23N50LPBF - Power MOSFET, N Channel, 500 V, 23 A, 0.235 ohm, TO-247AC, Through Hole

SC11180

Power MOSFET, N Channel, 500 V, 23 A, 0.235 ohm, TO-247AC, Through Hole

VISHAY

The IRFP23N50LPBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. Superfast body diode eliminates the need for external diodes in ZVS applications. Suitable for use in zero voltage switching SMPS, telecom and se...

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N Channel 500V 23A 370W TO-247AC 0.235ohm
FQA170N06.
FQA170N06. - Power MOSFET, N Channel, 60 V, 170 A, 0.0056 ohm, TO-3P, Through Hole

SC06320

Power MOSFET, N Channel, 60 V, 170 A, 0.0056 ohm, TO-3P, Through Hole

ONSEMI

• Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 170A • Power Dissipation : 375W • Drain Source On State Resistance : 0.0056ohm

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N Channel 60V 170A 375W - 0.0056ohm
BD437
BD437 - Transistor, NPN, TO126

SC13790

Transistor, NPN, TO126

MULTICOMP PRO

The BD437 is a silicon NPN Bipolar Transistor intended for use in medium power linear and switching applications. • -65 to 150°C Junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Cond...

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- - - 36W - -
BC848CLT1G
BC848CLT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 30 V, 100 MHz, 300 mW, 100 mA, 100 hFE

SC14981

Bipolar (BJT) Single Transistor, General Purpose, NPN, 30 V, 100 MHz, 300 mW, 100 mA, 100 hFE

ONSEMI

The BC848CLT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Moisture sensitivity level-1 • AEC-Q101 qu...

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- - - 300mW SOT-23 -
FDP5800
FDP5800 - Power MOSFET, N Channel, 60 V, 80 A, 0.006 ohm, TO-220, Through Hole

SC16966

Power MOSFET, N Channel, 60 V, 80 A, 0.006 ohm, TO-220, Through Hole

ONSEMI

The FDP5800 is a N-channel MOSFET produced using advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification, battery protecti...

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N Channel 60V 80A 242mW TO-220 0.006ohm
ULN2003AINSR
ULN2003AINSR - High Voltage, High Current Darlington Transistor Arrays, Bipolar, NPN, 50V, 500mA, SOP

SC18106

High Voltage, High Current Darlington Transistor Arrays, Bipolar, NPN, 50V, 500mA, SOP

TEXAS INSTRUMENTS

High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...

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VNP20N07-E
VNP20N07-E - Power MOSFET, N Channel, 80V, 10A, 0.05 ohm, TO-220

SC15832

Power MOSFET, N Channel, 80V, 10A, 0.05 ohm, TO-220

STMICROELECTRONICS

The VNP20N07-E is a 70V Fully Auto Protected Power MOSFET made using VIPower technology intended for replacement of standard power MOSFETS in DC to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the c...

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N Channel 80V 10A 83W TO-220 0.05ohm