Transistors
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Transistors
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Transistors
Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Power Dissipation | Transistor Case Style | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP12N60C
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SC11098 |
Power MOSFET, N Channel, 600 V, 12 A, 0.65 ohm, TO-220, Through Hole ONSEMI The FQP12N60C is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and wit...
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N Channel | 600V | 12A | 225W | TO-220 | 0.65ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCW60B
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SC06591 |
Transistor, NPN SOT23 NXP The BCW60B is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • AB marking code
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- | - | - | 250mW | SOT-23 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BD136
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SC09318 |
Transistor, PNP, TO126 STMICROELECTRONICS The BD136 is a PNP complementary epitaxial planar Low Voltage Transistor mounted in the plastic package. It is designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. • Pre-selected in DC current gain
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- | - | - | 1.25W | TO-126 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MJL1302AG
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SC06828 |
Transistor, PNP, TO264 ONSEMI The MJL1302AG is a -260V PNP Bipolar Complementary Power Transistor designed for use in high end consumer audio products and professional audio amplifiers such as theatre and stadium sound systems as well public address systems (PAs). • Exceptional safe op...
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- | - | - | 200W | TO-264 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP4110PBF
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SC11168 |
Power MOSFET, N Channel, 100 V, 120 A, 0.0045 ohm, TO-247AC, Through Hole INFINEON The IRFP4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...
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N Channel | 100V | 120A | 370W | - | 0.0045ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFU5305PBF
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SC11065 |
Power MOSFET, P Channel, 55 V, 22 A, 0.065 ohm, TO-251AA, Through Hole INFINEON • Single N-channel HEXFET® power MOSFET • Advanced process technology • Ultra low on-resistance • Fast switching • Fully avalanche rated • Dynamic dv/dt rating
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P Channel | 55V | 22A | 69W | - | 0.065ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZT658
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SC10987 |
Transistor, NPN, SOT223 DIODES INC. The FZT658 is a NPN silicon planar high voltage Bipolar Transistor offers 500mA high continuous current and less-than 250mV low saturation voltage VCE (SAT) @ 50mA. • UL94V-0 Flammability rating • 1A Peak pulse current • hFE<gt/>40 Specified up to 200mA fo...
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- | - | - | 2W | SOT-223 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SMBT2222A
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SC10624 |
Transistor, NPN, SOT23 INFINEON • Transistor Polarity : NPN • Collector Emitter Voltage Max : 40V • Continuous Collector Current : 600mA • Transition Frequency : 300MHz • Power Dissipation : 330mW
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- | - | - | 330mW | SOT-23 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP19N20
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SC08208 |
Power MOSFET, N Channel, 200 V, 19.4 A, 0.15 ohm, TO-220, Through Hole ONSEMI The FQP19N20 is a N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high av...
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N Channel | 200V | 19.4A | 140W | - | 0.15ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ15015G
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SC06780 |
Transistor, NPN, TO3 ONSEMI The MJ15015G is a 120V NPN complementary silicon Bipolar Transistor designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers, DC-to-DC converters, inverte...
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- | - | - | 180W | TO-3 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX551
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SC10974 |
Transistor, PNP, E-Line DIODES INC. The ZTX551 is a PNP silicon planar medium power Bipolar Transistor offers -1A continuous collector current and -80V collector-base voltage. • -55 to 200°C Operating temperature range
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- | - | - | 1W | E-Line | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFU9014PBF
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SC11069 |
Power MOSFET, P Channel, 60 V, 5.6 A, 0.5 ohm, TO-251AA, Through Hole VISHAY The IRFU9014PBF is a P-channel Power MOSFET with combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching and ease of paralleling
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P Channel | 60V | 5.6A | 30W | TO-251AA | 0.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BDX53C
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SC10998 |
Darlington Transistor, TO220 STMICROELECTRONICS The BDX53C from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar base island technology with monolithic darlington configuration. This transistor features good DC gain and ...
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- | - | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN4310A
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SC06969 |
Power MOSFET, N Channel, 100 V, 900 mA, 0.65 ohm, TO-226AA, Through Hole DIODES INC. The ZVN4310A is a 100V E-Line N-channel Enhancement Mode Vertical DMOS FET with 0.5Ω resistance and 850mW power dissipation.
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N Channel | 100V | 900mA | 850mW | TO-226AA | 0.65ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFD120PBF
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SC07021 |
Power MOSFET, N Channel, 100 V, 1.3 A, 0.27 ohm, DIP, Through Hole VISHAY The IRFD120PBF is a 100V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which c...
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N Channel | 100V | 1.3A | 1.3W | DIP | 0.27ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BF259MC
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SC06649 |
Transistor, NPN TO39 MULTICOMP PRO • Transistor Polarity : NPN • Collector Emitter Voltage Max : 300V
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- | - | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N4033MC
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SC06641 |
Transistor, PNP TO39 MULTICOMP PRO • Transistor Polarity : NPN • Collector Emitter Voltage Max : 80V
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- | - | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD135
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SC10992 |
Transistor, NPN, TO126 STMICROELECTRONICS The BD135 is a NPN low voltage Transistor built in epitaxial planar technology. Designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. • Complement to BD136 • 0.5A Base current • 10°C/W Junction-to-case thermal r...
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- | - | - | 1.25W | TO-126 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW20NM50FD
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SC11175 |
Power MOSFET, N Channel, 500 V, 20 A, 0.25 ohm, TO-247, Through Hole STMICROELECTRONICS The STW20NM50FD is a 500V N-channel FDmesh™ Power MOSFET with fast diode. The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast recovery body diode. It is therefore strongly recommended for bridge topologi...
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N Channel | 500V | 20A | 214W | TO-247 | 0.25ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLU024NPBF
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SC11074 |
Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-251AA, Through Hole INFINEON The IRLU024NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated •...
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N Channel | 55V | 17A | 46W | - | 0.065ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP23N50LPBF
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SC11180 |
Power MOSFET, N Channel, 500 V, 23 A, 0.235 ohm, TO-247AC, Through Hole VISHAY The IRFP23N50LPBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. Superfast body diode eliminates the need for external diodes in ZVS applications. Suitable for use in zero voltage switching SMPS, telecom and se...
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N Channel | 500V | 23A | 370W | TO-247AC | 0.235ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP31A
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SC06755 |
Transistor, NPN, TO220 STMICROELECTRONICS The TIP31A is a 60V NPN Power Transistor manufactured in base island technology with better performance. The transistor is suitable for audio, power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduce...
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- | - | - | 40W | TO-220 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQA170N06.
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SC06320 |
Power MOSFET, N Channel, 60 V, 170 A, 0.0056 ohm, TO-3P, Through Hole ONSEMI • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 170A • Power Dissipation : 375W • Drain Source On State Resistance : 0.0056ohm
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N Channel | 60V | 170A | 375W | - | 0.0056ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD437
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SC13790 |
Transistor, NPN, TO126 MULTICOMP PRO The BD437 is a silicon NPN Bipolar Transistor intended for use in medium power linear and switching applications. • -65 to 150°C Junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Cond...
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- | - | - | 36W | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC848CLT1G
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SC14981 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 30 V, 100 MHz, 300 mW, 100 mA, 100 hFE ONSEMI The BC848CLT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Moisture sensitivity level-1 • AEC-Q101 qu...
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- | - | - | 300mW | SOT-23 | - |