Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

Diodes Thyristors, DIACS & TRIACS Npn Transistors Pnp Transistors Photo Transistors
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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Power Dissipation Transistor Case Style Drain Source On State Resistance
 
 
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DMP3099L-7
DMP3099L-7 - Power MOSFET, P Channel, 30 V, 3.8 A, 0.065 ohm, SOT-23, Surface Mount

SC21313

Power MOSFET, P Channel, 30 V, 3.8 A, 0.065 ohm, SOT-23, Surface Mount

DIODES INC.

DMP3099L-7 is a P-channel enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applicati...

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P Channel 30V 3.8A 1.08W SOT-23 0.065ohm
SI7113DN-T1-GE3
SI7113DN-T1-GE3 - Power MOSFET, P Channel, 100 V, 13.2 A, 0.134 ohm, PowerPAK 1212, Surface Mount

SC21597

Power MOSFET, P Channel, 100 V, 13.2 A, 0.134 ohm, PowerPAK 1212, Surface Mount

VISHAY

• P-channel 100V (D-S) TrenchFET® power MOSFET • Low thermal resistance PowerPAK® package with Low 1.07mm profile • UIS and Rg tested • Suitable for active clamp in intermediate DC/DC power supplies

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P Channel 100V 13.2A 52W PowerPAK 1212 0.134ohm
ZTX690B
ZTX690B - Bipolar (BJT) Single Transistor, NPN, 45 V, 2 A, 1 W, E-Line, Through Hole

SC21331

Bipolar (BJT) Single Transistor, NPN, 45 V, 2 A, 1 W, E-Line, Through Hole

DIODES INC.

The ZTX690B is a 45V E-Line Silicon NPN Planar Medium Power High Gain Transistor featuring high gain and low saturation voltages. The transistor is ideal for siren drivers and battery powered circuits as well as Darlington replacement applications. • Gain ...

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- - - 1W E-Line -
BCV27,215
BCV27,215 - Darlington Transistor, Dual NPN, 30 V, 250 mW, 500 mA, SOT-23, 3 Pins

SC21411

Darlington Transistor, Dual NPN, 30 V, 250 mW, 500 mA, SOT-23, 3 Pins

NEXPERIA

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IPD90P04P405ATMA2
IPD90P04P405ATMA2 - Power Mosfet Transistor, P Channel, 40V, 90A, TO-252 (DPAK), SMD

SC20574

Power Mosfet Transistor, P Channel, 40V, 90A, TO-252 (DPAK), SMD

INFINEON

IPD90P04P405ATMA2 is a OptiMOS®-P2 power-transistor in a 3 pin TO-252 package. • Continuous drain current is -90A • Power dissipation is 125W • P-channel - normal level - enhancement mode • AEC qualified • 175°C operating temperature • 100% avalanche teste...

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P Channel 40V 90A 125W TO-252 (DPAK) 0.0047ohm
2N7002E-7-F
2N7002E-7-F - Power MOSFET, N Channel, 60 V, 250 mA, 3 ohm, SOT-23, Surface Mount

SC21289

Power MOSFET, N Channel, 60 V, 250 mA, 3 ohm, SOT-23, Surface Mount

DIODES INC.

• Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 250mA • Power Dissipation : 370mW • Transistor Case Style : SOT-23 • Drain Source On State Resistance : 3ohm

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N Channel 60V 250mA 370mW SOT-23 3ohm
BC856BS,115
BC856BS,115 - Bipolar Transistor Array, Dual PNP, 65 V, 100 mA

SC21409

Bipolar Transistor Array, Dual PNP, 65 V, 100 mA

NEXPERIA

The BC856BS is a 100mA PNP-PNP General Purpose Transistor Pair in a very small surface-mount plastic package. It is suitable for use with general purpose switching and amplification. • Low collector capacitance • Low collector-emitter saturation voltage • ...

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- - - - SOT-363 -
MJE350
MJE350 - Bipolar (BJT) Single Transistor, PNP, 300 V, 500 mA, 20.8 W, TO-225AA, Through Hole

SC21514

Bipolar (BJT) Single Transistor, PNP, 300 V, 500 mA, 20.8 W, TO-225AA, Through Hole

STMICROELECTRONICS

The MJE350 is a -300V Silicon Planar PNP Complementary Power Transistor intended for use in medium power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • Complem...

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- - - 20.8W TO-225AA -
BC847W,115
BC847W,115 - Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 100 mA, 200 mW, SOT-323, Surface Mount

SC21408

Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 100 mA, 200 mW, SOT-323, Surface Mount

NEXPERIA

The BC847 series NPN general purpose Transistor in SMD plastic package.

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- - - 200mW SOT-323 -
TIP31C
TIP31C - Bipolar (BJT) Single Transistor, NPN, 100 V, 3 A, 40 W, TO-220, Through Hole

SC21528

Bipolar (BJT) Single Transistor, NPN, 100 V, 3 A, 40 W, TO-220, Through Hole

STMICROELECTRONICS

The TIP31C is a base island technology NPN Power Transistor for audio, power linear and switching applications. • High Switching Speed • hFE Improved Linearity • hFE Grouping

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- - - 40W TO-220 -
STD20NF06LT4
STD20NF06LT4 - Power MOSFET, N Channel, 60 V, 24 A, 0.04 ohm, TO-252 (DPAK), Surface Mount

SC21521

Power MOSFET, N Channel, 60 V, 24 A, 0.04 ohm, TO-252 (DPAK), Surface Mount

STMICROELECTRONICS

The STD20NF06LT4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less cri...

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N Channel 60V 24A 60W TO-252 (DPAK) 0.04ohm
SI7145DP-T1-GE3
SI7145DP-T1-GE3 - Power MOSFET, P Channel, 30 V, 60 A, 0.0026 ohm, PowerPAK SO, Surface Mount

SC21598

Power MOSFET, P Channel, 30 V, 60 A, 0.0026 ohm, PowerPAK SO, Surface Mount

VISHAY

• Channel Type : P Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 60A • Power Dissipation : 104W • Transistor Case Style : PowerPAK SO • Drain Source On State Resistance : 0.0026ohm

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P Channel 30V 60A 104W PowerPAK SO 0.0026ohm
IRF540NSTRLPBF
IRF540NSTRLPBF - Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-263 (D2PAK), Surface Mount

SC21341

Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-263 (D2PAK), Surface Mount

INFINEON

The IRF540NSTRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an ext...

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N Channel 100V 33A 130W TO-263 (D2PAK) 0.044ohm
SQ2389ES-T1_GE3
SQ2389ES-T1_GE3 - Power MOSFET, P Channel, 40 V, 4.1 A, 0.094 ohm, SOT-23, Surface Mount

SC21607

Power MOSFET, P Channel, 40 V, 4.1 A, 0.094 ohm, SOT-23, Surface Mount

VISHAY

• Channel Type : P Channel • Drain Source Voltage Vds : 40V • Continuous Drain Current Id : 4.1A • Power Dissipation : 3.3W • Transistor Case Style : SOT-23 • Drain Source On State Resistance : 0.094ohm

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P Channel 40V 4.1A 3.3W SOT-23 0.094ohm
DMN62D0U-7
DMN62D0U-7 - Power MOSFET, N Channel, 60 V, 380 mA, 2 ohm, SOT-23, Surface Mount

SC21310

Power MOSFET, N Channel, 60 V, 380 mA, 2 ohm, SOT-23, Surface Mount

DIODES INC.

DMN62D0U-7 is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications in...

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N Channel 60V 380mA 380mW SOT-23 2ohm
BC807-25
BC807-25 - Bipolar (BJT) Single Transistor, PNP, 45 V, 500 mA, 300 mW, SOT-23, Surface Mount

SC21377

Bipolar (BJT) Single Transistor, PNP, 45 V, 500 mA, 300 mW, SOT-23, Surface Mount

MULTICOMP PRO

The BC807-25 is a PNP Bipolar Transistor designed for general purpose amplifier applications. It has low collector-emitter saturation voltage. • High collector current • High current gain • -65 to 150°C Junction temperature range • Multicomp Pro products a...

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- - - 300mW SOT-23 -
NX7002BKMYL
NX7002BKMYL - Power MOSFET, N Channel, 60 V, 350 mA, 2.8 ohm, SOT-883, Surface Mount

SC21425

Power MOSFET, N Channel, 60 V, 350 mA, 2.8 ohm, SOT-883, Surface Mount

NEXPERIA

• Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 350mA • Power Dissipation : 350mW • Transistor Case Style : SOT-883 • Drain Source On State Resistance : 2.8ohm

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N Channel 60V 350mA 350mW SOT-883 2.8ohm
PDTC123JT,215
PDTC123JT,215 - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm

SC21428

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm

NEXPERIA

The PDTC123JT is a 2.2 to 47kΩ NPN Resistor Equipped Transistor (RET) in a small surface-mount device plastic package. • Reduces component count • Built-in bias resistors • Reduces pick and place costs • Simplifies circuit design • AEC-Q101 qualified • PNP...

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- - - 250mW SOT-23 -
SQ2364EES-T1_GE3
SQ2364EES-T1_GE3 - Power MOSFET, N Channel, 60 V, 2 A, 0.24 ohm, SOT-23, Surface Mount

SC21606

Power MOSFET, N Channel, 60 V, 2 A, 0.24 ohm, SOT-23, Surface Mount

VISHAY

New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...

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N Channel 60V 2A 3W SOT-23 0.24ohm
2N7002BKW,115
2N7002BKW,115 - Power MOSFET, N Channel, 60 V, 310 mA, 1.6 ohm, SOT-323, Surface Mount

SC21405

Power MOSFET, N Channel, 60 V, 310 mA, 1.6 ohm, SOT-323, Surface Mount

NEXPERIA

The 2N7002BKW is a N-channel enhancement-mode MOSFET designed in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuits. • Logic-leve...

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N Channel 60V 310mA 275mW SOT-323 1.6ohm
SI3456DDV-T1-GE3
SI3456DDV-T1-GE3 - Power MOSFET, N Channel, 30 V, 6.3 A, 0.04 ohm, TSOP, Surface Mount

SC21595

Power MOSFET, N Channel, 30 V, 6.3 A, 0.04 ohm, TSOP, Surface Mount

VISHAY

The SI3456DDV-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch, HDD and DC-to-DC converter applications. • Halogen-free • -55 to 150°C Operating temperature range

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N Channel 30V 6.3A 1.7W TSOP 0.04ohm
SMMBT3904LT1G
SMMBT3904LT1G - Bipolar (BJT) Single Transistor, NPN, 40 V, 200 mA, 300 mW, SOT-23, Surface Mount

SC21490

Bipolar (BJT) Single Transistor, NPN, 40 V, 200 mA, 300 mW, SOT-23, Surface Mount

ONSEMI

SMMBT3904LT1G is a NPN general purpose transistor in a 3 pin SOT-23 package. • Collector-emitter voltage is 40VDC • AEC-Q101 qualified and PPAP capable • Collector current - continuous is 200mA DC • Collector-base voltage VCBO is 60VDC, emitter-base voltag...

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- - - 300mW SOT-23 -
BSS8402DW-7-F
BSS8402DW-7-F - Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 115 mA, 115 mA, 13.5 Ohm

SC21301

Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 115 mA, 115 mA, 13.5 Ohm

DIODES INC.

BSS8402DW-7-F is a complementary pair enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and maintains superior switching performance, making it ideal for high efficiency power management applications. Typi...

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Complementary N and P Channel - - - SOT-363 -
BC817
BC817 - Transistor, NPN SOT23

SC06580

Transistor, NPN SOT23

NXP

• Power Dissipation : 250mW • Transistor Case Style : SOT-23

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- - - 250mW SOT-23 -
BFS17PE6327HTSA1
BFS17PE6327HTSA1 - Bipolar - RF Transistor, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, SOT-23

SC11003

Bipolar - RF Transistor, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, SOT-23

INFINEON

The BFS 17P E6327 is a NPN Silicon RF Transistor for broadband amplifiers up to 1GHz at collector currents from 1 to 20mA. It is suitable for use with amplifier and oscillator applications in RF front-end.

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- - - 280mW SOT-23 -