Transistors
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Transistors
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Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Power Dissipation | Transistor Case Style | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP3099L-7
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SC21313 |
Power MOSFET, P Channel, 30 V, 3.8 A, 0.065 ohm, SOT-23, Surface Mount DIODES INC. DMP3099L-7 is a P-channel enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applicati...
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P Channel | 30V | 3.8A | 1.08W | SOT-23 | 0.065ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7113DN-T1-GE3
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SC21597 |
Power MOSFET, P Channel, 100 V, 13.2 A, 0.134 ohm, PowerPAK 1212, Surface Mount VISHAY • P-channel 100V (D-S) TrenchFET® power MOSFET • Low thermal resistance PowerPAK® package with Low 1.07mm profile • UIS and Rg tested • Suitable for active clamp in intermediate DC/DC power supplies
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P Channel | 100V | 13.2A | 52W | PowerPAK 1212 | 0.134ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ZTX690B
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SC21331 |
Bipolar (BJT) Single Transistor, NPN, 45 V, 2 A, 1 W, E-Line, Through Hole DIODES INC. The ZTX690B is a 45V E-Line Silicon NPN Planar Medium Power High Gain Transistor featuring high gain and low saturation voltages. The transistor is ideal for siren drivers and battery powered circuits as well as Darlington replacement applications. • Gain ...
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- | - | - | 1W | E-Line | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCV27,215
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SC21411 |
Darlington Transistor, Dual NPN, 30 V, 250 mW, 500 mA, SOT-23, 3 Pins NEXPERIA
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IPD90P04P405ATMA2
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SC20574 |
Power Mosfet Transistor, P Channel, 40V, 90A, TO-252 (DPAK), SMD INFINEON IPD90P04P405ATMA2 is a OptiMOS®-P2 power-transistor in a 3 pin TO-252 package. • Continuous drain current is -90A • Power dissipation is 125W • P-channel - normal level - enhancement mode • AEC qualified • 175°C operating temperature • 100% avalanche teste...
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P Channel | 40V | 90A | 125W | TO-252 (DPAK) | 0.0047ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002E-7-F
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SC21289 |
Power MOSFET, N Channel, 60 V, 250 mA, 3 ohm, SOT-23, Surface Mount DIODES INC. • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 250mA • Power Dissipation : 370mW • Transistor Case Style : SOT-23 • Drain Source On State Resistance : 3ohm
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N Channel | 60V | 250mA | 370mW | SOT-23 | 3ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856BS,115
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SC21409 |
Bipolar Transistor Array, Dual PNP, 65 V, 100 mA NEXPERIA The BC856BS is a 100mA PNP-PNP General Purpose Transistor Pair in a very small surface-mount plastic package. It is suitable for use with general purpose switching and amplification. • Low collector capacitance • Low collector-emitter saturation voltage • ...
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- | - | - | - | SOT-363 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE350
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SC21514 |
Bipolar (BJT) Single Transistor, PNP, 300 V, 500 mA, 20.8 W, TO-225AA, Through Hole STMICROELECTRONICS The MJE350 is a -300V Silicon Planar PNP Complementary Power Transistor intended for use in medium power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • Complem...
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- | - | - | 20.8W | TO-225AA | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847W,115
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SC21408 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 100 mA, 200 mW, SOT-323, Surface Mount NEXPERIA The BC847 series NPN general purpose Transistor in SMD plastic package.
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- | - | - | 200mW | SOT-323 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP31C
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SC21528 |
Bipolar (BJT) Single Transistor, NPN, 100 V, 3 A, 40 W, TO-220, Through Hole STMICROELECTRONICS The TIP31C is a base island technology NPN Power Transistor for audio, power linear and switching applications. • High Switching Speed • hFE Improved Linearity • hFE Grouping
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- | - | - | 40W | TO-220 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STD20NF06LT4
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SC21521 |
Power MOSFET, N Channel, 60 V, 24 A, 0.04 ohm, TO-252 (DPAK), Surface Mount STMICROELECTRONICS The STD20NF06LT4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less cri...
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N Channel | 60V | 24A | 60W | TO-252 (DPAK) | 0.04ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI7145DP-T1-GE3
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SC21598 |
Power MOSFET, P Channel, 30 V, 60 A, 0.0026 ohm, PowerPAK SO, Surface Mount VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 60A • Power Dissipation : 104W • Transistor Case Style : PowerPAK SO • Drain Source On State Resistance : 0.0026ohm
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P Channel | 30V | 60A | 104W | PowerPAK SO | 0.0026ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF540NSTRLPBF
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SC21341 |
Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-263 (D2PAK), Surface Mount INFINEON The IRF540NSTRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an ext...
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N Channel | 100V | 33A | 130W | TO-263 (D2PAK) | 0.044ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQ2389ES-T1_GE3
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SC21607 |
Power MOSFET, P Channel, 40 V, 4.1 A, 0.094 ohm, SOT-23, Surface Mount VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 40V • Continuous Drain Current Id : 4.1A • Power Dissipation : 3.3W • Transistor Case Style : SOT-23 • Drain Source On State Resistance : 0.094ohm
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P Channel | 40V | 4.1A | 3.3W | SOT-23 | 0.094ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMN62D0U-7
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SC21310 |
Power MOSFET, N Channel, 60 V, 380 mA, 2 ohm, SOT-23, Surface Mount DIODES INC. DMN62D0U-7 is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications in...
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N Channel | 60V | 380mA | 380mW | SOT-23 | 2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807-25
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SC21377 |
Bipolar (BJT) Single Transistor, PNP, 45 V, 500 mA, 300 mW, SOT-23, Surface Mount MULTICOMP PRO The BC807-25 is a PNP Bipolar Transistor designed for general purpose amplifier applications. It has low collector-emitter saturation voltage. • High collector current • High current gain • -65 to 150°C Junction temperature range • Multicomp Pro products a...
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- | - | - | 300mW | SOT-23 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX7002BKMYL
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SC21425 |
Power MOSFET, N Channel, 60 V, 350 mA, 2.8 ohm, SOT-883, Surface Mount NEXPERIA • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 350mA • Power Dissipation : 350mW • Transistor Case Style : SOT-883 • Drain Source On State Resistance : 2.8ohm
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N Channel | 60V | 350mA | 350mW | SOT-883 | 2.8ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PDTC123JT,215
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SC21428 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm NEXPERIA The PDTC123JT is a 2.2 to 47kΩ NPN Resistor Equipped Transistor (RET) in a small surface-mount device plastic package. • Reduces component count • Built-in bias resistors • Reduces pick and place costs • Simplifies circuit design • AEC-Q101 qualified • PNP...
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- | - | - | 250mW | SOT-23 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQ2364EES-T1_GE3
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SC21606 |
Power MOSFET, N Channel, 60 V, 2 A, 0.24 ohm, SOT-23, Surface Mount VISHAY New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...
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N Channel | 60V | 2A | 3W | SOT-23 | 0.24ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002BKW,115
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SC21405 |
Power MOSFET, N Channel, 60 V, 310 mA, 1.6 ohm, SOT-323, Surface Mount NEXPERIA The 2N7002BKW is a N-channel enhancement-mode MOSFET designed in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuits. • Logic-leve...
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N Channel | 60V | 310mA | 275mW | SOT-323 | 1.6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI3456DDV-T1-GE3
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SC21595 |
Power MOSFET, N Channel, 30 V, 6.3 A, 0.04 ohm, TSOP, Surface Mount VISHAY The SI3456DDV-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch, HDD and DC-to-DC converter applications. • Halogen-free • -55 to 150°C Operating temperature range
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N Channel | 30V | 6.3A | 1.7W | TSOP | 0.04ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SMMBT3904LT1G
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SC21490 |
Bipolar (BJT) Single Transistor, NPN, 40 V, 200 mA, 300 mW, SOT-23, Surface Mount ONSEMI SMMBT3904LT1G is a NPN general purpose transistor in a 3 pin SOT-23 package. • Collector-emitter voltage is 40VDC • AEC-Q101 qualified and PPAP capable • Collector current - continuous is 200mA DC • Collector-base voltage VCBO is 60VDC, emitter-base voltag...
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- | - | - | 300mW | SOT-23 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS8402DW-7-F
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SC21301 |
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 115 mA, 115 mA, 13.5 Ohm DIODES INC. BSS8402DW-7-F is a complementary pair enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and maintains superior switching performance, making it ideal for high efficiency power management applications. Typi...
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Complementary N and P Channel | - | - | - | SOT-363 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817
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SC06580 |
Transistor, NPN SOT23 NXP • Power Dissipation : 250mW • Transistor Case Style : SOT-23
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- | - | - | 250mW | SOT-23 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BFS17PE6327HTSA1
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SC11003 |
Bipolar - RF Transistor, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, SOT-23 INFINEON The BFS 17P E6327 is a NPN Silicon RF Transistor for broadband amplifiers up to 1GHz at collector currents from 1 to 20mA. It is suitable for use with amplifier and oscillator applications in RF front-end.
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- | - | - | 280mW | SOT-23 | - |