Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

Diodes Thyristors, DIACS & TRIACS Npn Transistors Pnp Transistors Photo Transistors
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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Power Dissipation Transistor Case Style Drain Source On State Resistance
 
 
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IRF540NSTRLPBF
IRF540NSTRLPBF - Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-263 (D2PAK), Surface Mount

SC21341

Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-263 (D2PAK), Surface Mount

INFINEON

The IRF540NSTRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an ext...

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N Channel 100V 33A 130W TO-263 (D2PAK) 0.044ohm
SI7145DP-T1-GE3
SI7145DP-T1-GE3 - Power MOSFET, P Channel, 30 V, 60 A, 0.0026 ohm, PowerPAK SO, Surface Mount

SC21598

Power MOSFET, P Channel, 30 V, 60 A, 0.0026 ohm, PowerPAK SO, Surface Mount

VISHAY

• Channel Type : P Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 60A • Power Dissipation : 104W • Transistor Case Style : PowerPAK SO • Drain Source On State Resistance : 0.0026ohm

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P Channel 30V 60A 104W PowerPAK SO 0.0026ohm
2N7002A-7
2N7002A-7 - Power MOSFET, N Channel, 60 V, 180 mA, 6 ohm, SOT-23, Surface Mount

SC21288

Power MOSFET, N Channel, 60 V, 180 mA, 6 ohm, SOT-23, Surface Mount

DIODES INC.

2N7002A-7 is a N-channel enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications and motor control. ...

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N Channel 60V 180mA 370mW SOT-23 6ohm
BSC009NE2LS5IATMA1
BSC009NE2LS5IATMA1 - Power MOSFET, N Channel, 25 V, 100 A, 950 µohm, TDSON, Surface Mount

SC21338

Power MOSFET, N Channel, 25 V, 100 A, 950 µohm, TDSON, Surface Mount

INFINEON

• Channel Type : N Channel • Drain Source Voltage Vds : 25V • Continuous Drain Current Id : 100A • Power Dissipation : 74W • Transistor Case Style : TDSON • Drain Source On State Resistance : 950µohm

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N Channel 25V 100A 74W TDSON 950µohm
SI4463CDY-T1-GE3
SI4463CDY-T1-GE3 - Power MOSFET, P Channel, 20 V, 18.6 A, 0.008 ohm, SOIC, Surface Mount

SC21596

Power MOSFET, P Channel, 20 V, 18.6 A, 0.008 ohm, SOIC, Surface Mount

VISHAY

The SI4463CDY-T1-GE3 is a 2.5VGS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for adaptor switch, high current load switch and notebook applications. • 100% Rg tested • 100% UIS tested • Halogen-free • -55 to 150°C Operating temperature rang...

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P Channel 20V 18.6A 5W SOIC 0.008ohm
SPP20N60C3XKSA1
SPP20N60C3XKSA1 - Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-220, Through Hole

SC21344

Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-220, Through Hole

INFINEON

The SPP20N60C3 is a 650V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...

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N Channel 650V 20.7A 208W TO-220 0.19ohm
BC858B,215
BC858B,215 - Bipolar (BJT) Single Transistor, General Purpose, PNP, 30 V, 100 mA, 250 mW, SOT-23, Surface Mount

SC21410

Bipolar (BJT) Single Transistor, General Purpose, PNP, 30 V, 100 mA, 250 mW, SOT-23, Surface Mount

NEXPERIA

The BC858 series 100mA PNP General Purpose Transistor suitable for use with general purpose switching and amplification. • Surface-mount plastic package

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- - - 250mW SOT-23 -
TSM2306CX RFG
TSM2306CX RFG - Power MOSFET, N Channel, 30 V, 3.5 A, 0.046 ohm, SOT-23, Surface Mount

SC21549

Power MOSFET, N Channel, 30 V, 3.5 A, 0.046 ohm, SOT-23, Surface Mount

TAIWAN SEMICONDUCTOR

The TSM2306CX is a 30V N-channel Power MOSFET with high density cell design for ultra low on-resistance and advance trench process technology. • ±20V Gate-source voltage • 3.5A Continuous source current • 75°C/W Junction-to-case thermal resistance • 130°C/...

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N Channel 30V 3.5A 1.25W SOT-23 0.046ohm
BC847W,115
BC847W,115 - Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 100 mA, 200 mW, SOT-323, Surface Mount

SC21408

Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 100 mA, 200 mW, SOT-323, Surface Mount

NEXPERIA

The BC847 series NPN general purpose Transistor in SMD plastic package.

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- - - 200mW SOT-323 -
TIP31C
TIP31C - Bipolar (BJT) Single Transistor, NPN, 100 V, 3 A, 40 W, TO-220, Through Hole

SC21528

Bipolar (BJT) Single Transistor, NPN, 100 V, 3 A, 40 W, TO-220, Through Hole

STMICROELECTRONICS

The TIP31C is a base island technology NPN Power Transistor for audio, power linear and switching applications. • High Switching Speed • hFE Improved Linearity • hFE Grouping

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- - - 40W TO-220 -
NX7002BKMYL
NX7002BKMYL - Power MOSFET, N Channel, 60 V, 350 mA, 2.8 ohm, SOT-883, Surface Mount

SC21425

Power MOSFET, N Channel, 60 V, 350 mA, 2.8 ohm, SOT-883, Surface Mount

NEXPERIA

• Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 350mA • Power Dissipation : 350mW • Transistor Case Style : SOT-883 • Drain Source On State Resistance : 2.8ohm

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N Channel 60V 350mA 350mW SOT-883 2.8ohm
PDTC123JT,215
PDTC123JT,215 - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm

SC21428

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm

NEXPERIA

The PDTC123JT is a 2.2 to 47kΩ NPN Resistor Equipped Transistor (RET) in a small surface-mount device plastic package. • Reduces component count • Built-in bias resistors • Reduces pick and place costs • Simplifies circuit design • AEC-Q101 qualified • PNP...

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- - - 250mW SOT-23 -
BSS138L
BSS138L - Power MOSFET, Trench, N Channel, 50 V, 200 mA, 3.5 ohm, SOT-23, Surface Mount

SC21473

Power MOSFET, Trench, N Channel, 50 V, 200 mA, 3.5 ohm, SOT-23, Surface Mount

ONSEMI

• Channel Type : N Channel • Drain Source Voltage Vds : 50V • Continuous Drain Current Id : 200mA • Power Dissipation : 350mW • Transistor Case Style : SOT-23 • Drain Source On State Resistance : 3.5ohm

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N Channel 50V 200mA 350mW SOT-23 3.5ohm
TIP125
TIP125 - Darlington Transistor, PNP, 60V, 65W, 5A, TO-220 Case

SC20576

Darlington Transistor, PNP, 60V, 65W, 5A, TO-220 Case

STMICROELECTRONICS

The TIP125 is a NPN-PNP complementary power Darlington Transistor manufactured in Planar technology with "Base Island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low sa...

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NDS0610
NDS0610 - Power MOSFET, P Channel, 60 V, 120 mA, 10 ohm, SOT-23, Surface Mount

SC21483

Power MOSFET, P Channel, 60 V, 120 mA, 10 ohm, SOT-23, Surface Mount

ONSEMI

The NDS0610 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. They can be used...

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P Channel 60V 120mA 300mW SOT-23 10ohm
SUM55P06-19L-E3
SUM55P06-19L-E3 - Power MOSFET, P Channel, 60 V, 55 A, 0.019 ohm, TO-263 (D2PAK), Surface Mount

SC21612

Power MOSFET, P Channel, 60 V, 55 A, 0.019 ohm, TO-263 (D2PAK), Surface Mount

VISHAY

The SUM55P06-19L-E3 is a -60V P-channel TrenchFET® Power MOSFET.

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P Channel 60V 55A 125W TO-263 (D2PAK) 0.019ohm
2N7002BKW,115
2N7002BKW,115 - Power MOSFET, N Channel, 60 V, 310 mA, 1.6 ohm, SOT-323, Surface Mount

SC21405

Power MOSFET, N Channel, 60 V, 310 mA, 1.6 ohm, SOT-323, Surface Mount

NEXPERIA

The 2N7002BKW is a N-channel enhancement-mode MOSFET designed in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuits. • Logic-leve...

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N Channel 60V 310mA 275mW SOT-323 1.6ohm
SQ2364EES-T1_GE3
SQ2364EES-T1_GE3 - Power MOSFET, N Channel, 60 V, 2 A, 0.24 ohm, SOT-23, Surface Mount

SC21606

Power MOSFET, N Channel, 60 V, 2 A, 0.24 ohm, SOT-23, Surface Mount

VISHAY

New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...

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N Channel 60V 2A 3W SOT-23 0.24ohm
DMP2120U-7
DMP2120U-7 - Power MOSFET, P Channel, 20 V, 3.8 A, 0.062 ohm, SOT-23, Surface Mount

SC21311

Power MOSFET, P Channel, 20 V, 3.8 A, 0.062 ohm, SOT-23, Surface Mount

DIODES INC.

DMP2120U-7 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications i...

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P Channel 20V 3.8A 800mW SOT-23 0.062ohm
FMMT491ATA
FMMT491ATA - Bipolar (BJT) Single Transistor, NPN, 40 V, 1 A, 500 mW, SOT-23, Surface Mount

SC21316

Bipolar (BJT) Single Transistor, NPN, 40 V, 1 A, 500 mW, SOT-23, Surface Mount

DIODES INC.

FMMT491ATA is a NPN silicon planar medium power transistor. • RCE(sat) = 195mohm for a low equivalent on-resistance • hFE characterized up to 2A for high current gain hold up • Qualified to AEC-Q101 standards for high reliability, PPAP capable • Collector-...

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- - - 500mW SOT-23 -
IRLL2705TRPBF
IRLL2705TRPBF - Power MOSFET, N Channel, 55 V, 3.8 A, 0.04 ohm, SOT-223, Surface Mount

SC21342

Power MOSFET, N Channel, 55 V, 3.8 A, 0.04 ohm, SOT-223, Surface Mount

INFINEON

The IRLL2705TRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design,...

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N Channel 55V 3.8A 1W SOT-223 0.04ohm
BC817
BC817 - Transistor, NPN SOT23

SC06580

Transistor, NPN SOT23

NXP

• Power Dissipation : 250mW • Transistor Case Style : SOT-23

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- - - 250mW SOT-23 -
BFS17PE6327HTSA1
BFS17PE6327HTSA1 - Bipolar - RF Transistor, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, SOT-23

SC11003

Bipolar - RF Transistor, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, SOT-23

INFINEON

The BFS 17P E6327 is a NPN Silicon RF Transistor for broadband amplifiers up to 1GHz at collector currents from 1 to 20mA. It is suitable for use with amplifier and oscillator applications in RF front-end.

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- - - 280mW SOT-23 -
BC807-25
BC807-25 - Transistor, PNP, SOT23

SC06612

Transistor, PNP, SOT23

NXP

The BC807-25 is a PNP general purpose Transistor with 3 leads, high current and low voltage, plastic surface mount package. Designed for switching and amplification applications. • 150°C Junction temperature • 5pF Collector capacitance

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- - - 250mW SOT-23 -
BC846
BC846 - Transistor, NPN SOT23

SC06582

Transistor, NPN SOT23

NXP

• Power Dissipation : 250mW • Transistor Case Style : SOT-23

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- - - 250mW SOT-23 -