Transistors
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Transistors
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Transistors
Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Power Dissipation | Transistor Case Style | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF540NSTRLPBF
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SC21341 |
Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-263 (D2PAK), Surface Mount INFINEON The IRF540NSTRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an ext...
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N Channel | 100V | 33A | 130W | TO-263 (D2PAK) | 0.044ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7145DP-T1-GE3
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SC21598 |
Power MOSFET, P Channel, 30 V, 60 A, 0.0026 ohm, PowerPAK SO, Surface Mount VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 60A • Power Dissipation : 104W • Transistor Case Style : PowerPAK SO • Drain Source On State Resistance : 0.0026ohm
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P Channel | 30V | 60A | 104W | PowerPAK SO | 0.0026ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N7002A-7
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SC21288 |
Power MOSFET, N Channel, 60 V, 180 mA, 6 ohm, SOT-23, Surface Mount DIODES INC. 2N7002A-7 is a N-channel enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications and motor control. ...
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N Channel | 60V | 180mA | 370mW | SOT-23 | 6ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC009NE2LS5IATMA1
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SC21338 |
Power MOSFET, N Channel, 25 V, 100 A, 950 µohm, TDSON, Surface Mount INFINEON • Channel Type : N Channel • Drain Source Voltage Vds : 25V • Continuous Drain Current Id : 100A • Power Dissipation : 74W • Transistor Case Style : TDSON • Drain Source On State Resistance : 950µohm
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N Channel | 25V | 100A | 74W | TDSON | 950µohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4463CDY-T1-GE3
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SC21596 |
Power MOSFET, P Channel, 20 V, 18.6 A, 0.008 ohm, SOIC, Surface Mount VISHAY The SI4463CDY-T1-GE3 is a 2.5VGS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for adaptor switch, high current load switch and notebook applications. • 100% Rg tested • 100% UIS tested • Halogen-free • -55 to 150°C Operating temperature rang...
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P Channel | 20V | 18.6A | 5W | SOIC | 0.008ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPP20N60C3XKSA1
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SC21344 |
Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-220, Through Hole INFINEON The SPP20N60C3 is a 650V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...
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N Channel | 650V | 20.7A | 208W | TO-220 | 0.19ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC858B,215
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SC21410 |
Bipolar (BJT) Single Transistor, General Purpose, PNP, 30 V, 100 mA, 250 mW, SOT-23, Surface Mount NEXPERIA The BC858 series 100mA PNP General Purpose Transistor suitable for use with general purpose switching and amplification. • Surface-mount plastic package
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- | - | - | 250mW | SOT-23 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TSM2306CX RFG
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SC21549 |
Power MOSFET, N Channel, 30 V, 3.5 A, 0.046 ohm, SOT-23, Surface Mount TAIWAN SEMICONDUCTOR The TSM2306CX is a 30V N-channel Power MOSFET with high density cell design for ultra low on-resistance and advance trench process technology. • ±20V Gate-source voltage • 3.5A Continuous source current • 75°C/W Junction-to-case thermal resistance • 130°C/...
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N Channel | 30V | 3.5A | 1.25W | SOT-23 | 0.046ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847W,115
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SC21408 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 100 mA, 200 mW, SOT-323, Surface Mount NEXPERIA The BC847 series NPN general purpose Transistor in SMD plastic package.
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- | - | - | 200mW | SOT-323 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP31C
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SC21528 |
Bipolar (BJT) Single Transistor, NPN, 100 V, 3 A, 40 W, TO-220, Through Hole STMICROELECTRONICS The TIP31C is a base island technology NPN Power Transistor for audio, power linear and switching applications. • High Switching Speed • hFE Improved Linearity • hFE Grouping
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- | - | - | 40W | TO-220 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX7002BKMYL
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SC21425 |
Power MOSFET, N Channel, 60 V, 350 mA, 2.8 ohm, SOT-883, Surface Mount NEXPERIA • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 350mA • Power Dissipation : 350mW • Transistor Case Style : SOT-883 • Drain Source On State Resistance : 2.8ohm
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N Channel | 60V | 350mA | 350mW | SOT-883 | 2.8ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PDTC123JT,215
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SC21428 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm NEXPERIA The PDTC123JT is a 2.2 to 47kΩ NPN Resistor Equipped Transistor (RET) in a small surface-mount device plastic package. • Reduces component count • Built-in bias resistors • Reduces pick and place costs • Simplifies circuit design • AEC-Q101 qualified • PNP...
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- | - | - | 250mW | SOT-23 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138L
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SC21473 |
Power MOSFET, Trench, N Channel, 50 V, 200 mA, 3.5 ohm, SOT-23, Surface Mount ONSEMI • Channel Type : N Channel • Drain Source Voltage Vds : 50V • Continuous Drain Current Id : 200mA • Power Dissipation : 350mW • Transistor Case Style : SOT-23 • Drain Source On State Resistance : 3.5ohm
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N Channel | 50V | 200mA | 350mW | SOT-23 | 3.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP125
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SC20576 |
Darlington Transistor, PNP, 60V, 65W, 5A, TO-220 Case STMICROELECTRONICS The TIP125 is a NPN-PNP complementary power Darlington Transistor manufactured in Planar technology with "Base Island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low sa...
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- | - | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDS0610
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SC21483 |
Power MOSFET, P Channel, 60 V, 120 mA, 10 ohm, SOT-23, Surface Mount ONSEMI The NDS0610 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. They can be used...
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P Channel | 60V | 120mA | 300mW | SOT-23 | 10ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SUM55P06-19L-E3
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SC21612 |
Power MOSFET, P Channel, 60 V, 55 A, 0.019 ohm, TO-263 (D2PAK), Surface Mount VISHAY The SUM55P06-19L-E3 is a -60V P-channel TrenchFET® Power MOSFET.
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P Channel | 60V | 55A | 125W | TO-263 (D2PAK) | 0.019ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002BKW,115
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SC21405 |
Power MOSFET, N Channel, 60 V, 310 mA, 1.6 ohm, SOT-323, Surface Mount NEXPERIA The 2N7002BKW is a N-channel enhancement-mode MOSFET designed in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuits. • Logic-leve...
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N Channel | 60V | 310mA | 275mW | SOT-323 | 1.6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQ2364EES-T1_GE3
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SC21606 |
Power MOSFET, N Channel, 60 V, 2 A, 0.24 ohm, SOT-23, Surface Mount VISHAY New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...
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N Channel | 60V | 2A | 3W | SOT-23 | 0.24ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP2120U-7
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SC21311 |
Power MOSFET, P Channel, 20 V, 3.8 A, 0.062 ohm, SOT-23, Surface Mount DIODES INC. DMP2120U-7 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications i...
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P Channel | 20V | 3.8A | 800mW | SOT-23 | 0.062ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT491ATA
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SC21316 |
Bipolar (BJT) Single Transistor, NPN, 40 V, 1 A, 500 mW, SOT-23, Surface Mount DIODES INC. FMMT491ATA is a NPN silicon planar medium power transistor. • RCE(sat) = 195mohm for a low equivalent on-resistance • hFE characterized up to 2A for high current gain hold up • Qualified to AEC-Q101 standards for high reliability, PPAP capable • Collector-...
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- | - | - | 500mW | SOT-23 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLL2705TRPBF
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SC21342 |
Power MOSFET, N Channel, 55 V, 3.8 A, 0.04 ohm, SOT-223, Surface Mount INFINEON The IRLL2705TRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design,...
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N Channel | 55V | 3.8A | 1W | SOT-223 | 0.04ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817
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SC06580 |
Transistor, NPN SOT23 NXP • Power Dissipation : 250mW • Transistor Case Style : SOT-23
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- | - | - | 250mW | SOT-23 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BFS17PE6327HTSA1
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SC11003 |
Bipolar - RF Transistor, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, SOT-23 INFINEON The BFS 17P E6327 is a NPN Silicon RF Transistor for broadband amplifiers up to 1GHz at collector currents from 1 to 20mA. It is suitable for use with amplifier and oscillator applications in RF front-end.
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- | - | - | 280mW | SOT-23 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807-25
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SC06612 |
Transistor, PNP, SOT23 NXP The BC807-25 is a PNP general purpose Transistor with 3 leads, high current and low voltage, plastic surface mount package. Designed for switching and amplification applications. • 150°C Junction temperature • 5pF Collector capacitance
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- | - | - | 250mW | SOT-23 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846
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SC06582 |
Transistor, NPN SOT23 NXP • Power Dissipation : 250mW • Transistor Case Style : SOT-23
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- | - | - | 250mW | SOT-23 | - |