Transistors
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Transistors
Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.
| Diodes | Thyristors, DIACS & TRIACS | Npn Transistors | Pnp Transistors | Photo Transistors |
| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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BC847BLT3G
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SC16032 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 225mW, SOT-23, SMD ONSEMI
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SQM40031EL_GE3
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SC16939 |
SMD P Channel Power MOSFET 40V, 120A, 0.0025 Ohm, TO-263 (D2PAK) VISHAY • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested • AEC-Q101 qualified
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BC546BTF
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SC15782 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 500mW, TO-92 ONSEMI The BC546BTF is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • High voltage VCEO • Complement to BC556
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FDC5614P
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SC16723 |
Power MOSFET, P Channel, 60 V, 3 A, 0.105 ohm, SuperSOT, Surface Mount ONSEMI The FDC5614P is a -60V P-channel logic level PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power s...
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FDS4435BZ
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SC16772 |
Power MOSFET, P Channel, 30 V, 8.8 A, 0.02 ohm, SOIC, Surface Mount ONSEMI The FDS4435BZ is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches com...
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TIP121
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SC06508 |
Power Transistor STMICROELECTRONICS The TIP121 is a complementary NPN Power Darlington Transistor with low collector-emitter saturation voltage. It is manufactured in planar technology with base island layout. The resulting transistor show exceptional high gain performance coupled with very ...
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FDP33N25
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SC16999 |
Power MOSFET, N Channel, 250 V, 33 A, 0.094 ohm, TO-220, Through Hole ONSEMI The FDP33N25 is an UniFET™ N-channel high voltage MOSFET produced based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. It is suitable f...
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MRF300AN
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SC15950 |
RF FET Transistor, 133V, 272W, 1.8MHz, 250MHz, TO-247 NXP These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical applications and HF and VHF communications as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Their unmatched input and...
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NTR4171PT1G
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SC16782 |
Power MOSFET, P Channel, 30 V, 3.5 A, 0.075 ohm, SOT-23, Surface Mount ONSEMI The NTR4171PT1G is a P-channel Power MOSFET offers -30V drain source voltage and -2.2A continuous drain current. It is suitable for load switch, optimized for battery and load management applications in portable equipment like cell phones, PDA's and media ...
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IRLZ44NPBF
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SC11128 |
Power MOSFET, N Channel, 55 V, 47 A, 0.022 ohm, TO-220AB, Through Hole INFINEON The IRLZ44NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated • ...
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BCW71
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SC06592 |
Transistor, NPN SOT23 NXP The BCW71 is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with the general purpose switching and amplification. • Low current • Low voltage • Low noise • K1 Marking code
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2N4401
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SC15746 |
Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 625mW, TO-92 MULTICOMP PRO The 2N4401 from Multicomp Pro is a through hole, NPN low power, silicon planar epitaxial transistors in TO-92 metal can package. This device is used for general purpose switching applications. • Collector emitter voltage (Vce) of 40V • Continuous collector...
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D45H8G
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SC06761 |
Transistor, PNP, TO220 ONSEMI The D45H8G is a 10A PNP bipolar Power Transistor offers low collector-emitter saturation voltage. It can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters a...
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IRF7319TRPBF
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SC16802 |
Dual MOSFET, Complementary N and P Channel, 30V, 6.5A, 0.023 Ohm, SOIC, Surface Mount INFINEON • Generation V Technology • Ultra low On-Resistance
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BC850C
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SC06590 |
Transistor, NPN SOT23 NXP
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2N7002
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SC06978 |
MOSFET, N, SOT23 NXP
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BC549C
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SC12757 |
Transistor, NPN, TO92 MULTICOMP PRO The BC549C from Multicomp Pro are through hole, NPN silicon planar epitaxial general purpose transistor in TO-92 metal can package. This device is typically used in driver stages of audio amplifiers, tape recorders, low noise input stages, Hi-Fi amplifiers...
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BS170-D75Z
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SC16845 |
Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, TO-226AA, Through Hole ONSEMI The BS170_D75Z is a N-channel enhancement-mode FET produced using high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring...
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IRF520NPBF
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SC08214 |
Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole INFINEON The IRF520NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known ...
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BC559CTA
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SC15790 |
Bipolar (BJT) Single Transistor, PNP, -30V, -100mA, 500mW, TO-92 ONSEMI The BC559CTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Low noise • Complement to BC549
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2N2222A
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SC06714 |
Transistor, NPN, TO18 MULTICOMP PRO Silicon planar NPN switching transistor for switching and linear application, DC and VHF amplifier applications. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers would...
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BD140
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SC08795 |
Transistor, PNP, TO126 CDIL
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SPA11N80C3
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SC11117 |
Power MOSFET, N Channel, 800 V, 11 A, 0.39 ohm, TO-220FP, Through Hole INFINEON The SPA11N80C3 is a 800V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...
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BDV66B
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SC06868 |
Darlington Transistor, TO247 MULTICOMP PRO The BDV66B is a -100V Silicon PNP Complementary Darlington Power Transistor having monolithic construction with built-in base-emitter shunt resistor. • Collector-emitter sustaining voltage (Vceo (sus) = 100V minimum) • Collector-emitter saturation voltage(...
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TP0606N3-G
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SC16919 |
P Channel Power MOSFET, Vertical DMOS FET, 60V, 320mA, 3 Ohm, TO-92 MICROCHIP This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...
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