Transistors
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Transistors
Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.
Diodes | Thyristors, DIACS & TRIACS | Npn Transistors | Pnp Transistors | Photo Transistors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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J112
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SC05830 |
JFET Transistor, -35 V, -5 V, TO-92, 3 Pin, 150 °C ONSEMI J112 is a through hole, N channel switch in TO-92 package. This device is designed for low level analogue switching, sample and hold circuits and chopper stabilized amplifiers. • Source and drain are interchangeable • Gate to source breakdown voltage of 35...
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N Channel | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TIP42A
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SC06766 |
Transistor, PNP, TO220 MULTICOMP PRO The TIP42A is a PNP Power Transistor designed for use in general purpose power amplifier and switching applications. • 3MHz Minimum current gain-bandwidth product fT @ IC = 500mA • -65 to 150°C Operating junction temperature range • Multicomp Pro products ...
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IRF520NPBF
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SC08214 |
Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole INFINEON The IRF520NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known ...
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N Channel | 100V | 9.7A | 0.2ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STD30NF06LT4
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SC16912 |
Power MOSFET, N Channel, 60 V, 35 A, 0.022 ohm, TO-252 (DPAK), Surface Mount STMICROELECTRONICS The STD30NF06LT4 is a N-channel STripFET™II Power MOSFET with single feature size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps a...
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N Channel | 60V | 35A | 0.022ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N4401
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SC15746 |
Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 625mW, TO-92 MULTICOMP PRO The 2N4401 from Multicomp Pro is a through hole, NPN low power, silicon planar epitaxial transistors in TO-92 metal can package. This device is used for general purpose switching applications. • Collector emitter voltage (Vce) of 40V • Continuous collector...
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DMP4065S-7
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SC15956 |
Power MOSFET, P Channel, 40V, 2.4A, 0.064 Ohm, SOT-23, SMD DIODES INC. DMP4065S-7 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications in...
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P Channel | 40V | 2.4A | 0.064ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPP80P06PHXKSA1
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SC15768 |
Power MOSFET, P Channel, 60V, 80A, 0.021 Ohm, TO-220 INFINEON The SPP80P06P H is a SIPMOS® P-channel enhancement mode Power Transistor. This transistor consistently meets the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit character...
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P Channel | 60V | 80A | 0.021ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC093N04LSGATMA1
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SC16751 |
Power MOSFET, N Channel, 40 V, 49 A, 0.0078 ohm, PG-TDSON, Surface Mount INFINEON The BSC093N04LS G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high sys...
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N Channel | 40V | 49A | 0.0078ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2302CDS-T1-GE3
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SC16836 |
Power MOSFET, N Channel, 20 V, 2.9 A, 0.045 ohm, TO-236, Surface Mount VISHAY The SI2302CDS-T1-GE3 is a 20V N-channel TrenchFET® power MOSFET for use in load switching for portable devices. • ±8V Gate to source voltage
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N Channel | 20V | 2.9A | 0.045ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PN2222ATA
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SC15759 |
Bipolar (BJT) Single Transistor, NPN, 40V, 1A , 625mW, TO-92 ONSEMI The PN2222ATA is a NPN Transistor for general purpose power amplifier and switch. • 200°C/W Thermal Resistance, Junction-to-Ambient
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IRLML0040TRPBF
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SC16758 |
Power MOSFET, N Channel, 40 V, 3.6 A, 0.044 ohm, SOT-23, Surface Mount INFINEON The IRLML0040TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Environment-friendly • Increased relia...
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N Channel | 40V | 3.6A | 0.044ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB3206PBF
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SC17003 |
Power MOSFET, N Channel, 60 V, 210 A, 0.003 ohm, TO-220AB, Through Hole INFINEON The IRFB3206PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. • Fully characterized ...
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N Channel | 60V | 210A | 0.003ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP47P06
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SC16959 |
Power MOSFET, P Channel, 60 V, 47 A, 0.021 ohm, TO-220, Through Hole ONSEMI The FQP47P06 is a -60V P-channel QFET® MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche ener...
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P Channel | 60V | 47A | 0.021ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSP613PH6327XTSA1
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SC16854 |
Power MOSFET, P Channel, 60 V, 2.9 A, 0.11 ohm, SOT-223, Surface Mount INFINEON The BSP613P H6327 is a -60V P-channel Power MOSFET that consistently meets highest quality and performance demands in key specifications for power system design such as on-state resistance and Figure of Merit characteristics. • Enhancement mode • Avalanche...
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P Channel | 60V | 2.9A | 0.11ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML2030TRPBF
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SC16739 |
Power MOSFET, N Channel, 30 V, 2.7 A, 0.08 ohm, SOT-23, Surface Mount INFINEON The IRLML2030TRPBF is a HEXFET® single N-channel Power MOSFET offers industry standard pin-out for multi-vendor compatibility. It is suitable for load/system switch, DC switches and battery protection. It is compatible with existing surface-mount technique...
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N Channel | 30V | 2.7A | 0.08ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVP3306F
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SC16881 |
SMD P Channel Power MOSFET, Enhancement Mode Vertical DMOS FET Power, 60V, 90mA, 14 Ohm, SOT-23 DIODES INC. The ZVP3306F is a -60V E-Line P-channel Enhancement Mode Vertical DMOS FET with 14Ω resistance and 330mW power dissipation.
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P Channel | 60V | 90mA | 14ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMV20ENR
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SC16980 |
SMD N Channel Power MOSFET, 30V, 6A, 0.017 Ohm, TO-236AB NEXPERIA The PMV20ENR from NEXPERIA is a N Channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for Relay driver, High-speed line driver, Low-side ...
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N Channel | 30V | 6A | 0.017ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7000
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SC06951 |
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole ONSEMI The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perf...
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N Channel | 60V | 200mA | 5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC461
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SC13213 |
Transistor, BC461, PNP, TO39 MULTICOMP PRO The BC461 is a -60V Silicon PNP Planar Epitaxial Medium Power Transistor ideal for low frequency devices typically with current ratings 2A. • High performance • Collector-base voltage(Vcbo = 350V) • Emitter-base voltage(Vebo = 6V) • Multicomp Pro products ...
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IRF9540NPBF
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SC08221 |
Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole INFINEON The IRF9540NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to ...
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P Channel | 100V | 23A | 0.117ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP141
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SC06870 |
Darlington Transistor, TO247 MULTICOMP PRO The TIP141 is a Darlington Transistor, designed for use in general-purpose amplifier and low speed switching applications. Collector-emitter sustaining voltage at 80V and power dissipation at 125W. • Monolithic construction with built-in base-emitter shunt...
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ULN2803A
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SC08607 |
Darlington Array 8 NPN, 2803, DIP18 STMICROELECTRONICS The ULN2803A is an eight darlington array in 18 pin DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features a peak load current rating of 600mA (500mA conti...
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BC182L
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SC12579 |
Transistor, NPN, TO92 MULTICOMP PRO The BC182L is a NPN Silicon planar Epitaxial Transistor for amplifiers. • 375°C/W Junction to Ambient Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • 96% of custome...
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ZVP2110A
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SC06974 |
Power MOSFET, P Channel, 100 V, 230 mA, 8 ohm, TO-226AA, Through Hole DIODES INC. The ZVP2110A is a -100V E-Line P-channel Enhancement Mode Vertical DMOS FET with 8Ω resistance and 700mW power dissipation.
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P Channel | 100V | 230mA | 8ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDS355AN
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SC06991 |
Power MOSFET, N Channel, 30 V, 1.7 A, 0.065 ohm, SOT-23, Surface Mount ONSEMI The NDS355AN is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltag...
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N Channel | 30V | 1.7A | 0.065ohm |