Transistors
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Transistors
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Diodes | Thyristors, DIACS & TRIACS | Npn Transistors | Pnp Transistors | Photo Transistors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN337N
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SC06984 |
Power MOSFET, N Channel, 30 V, 2.2 A, 0.065 ohm, SuperSOT, Surface Mount ONSEMI The FDN337N is N channel logic level enhancement mode power field effect transistor in superSOT-3 package. This transistor is produced using high cell density, DMOS technology, very high density process is especially tailored to minimize on state resistanc...
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N Channel | 30V | 2.2A | 0.065ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VNP10N07-E
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SC11011 |
Power MOSFET, N Channel, 70 V, 10 A, 0.1 ohm, TO-220, Through Hole STMICROELECTRONICS The VNP10N07-E is a monolithic device fully auto protected Power MOSFET with ESD protection. The VNP10N07 is a monolithic device made using STMicroelectronics VIPower technology, intended for replacement of standard power MOSFETS in DC to 50kHz application...
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N Channel | 70V | 10A | 0.1ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC109B
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SC06718 |
Transistor, NPN, TO18 MULTICOMP PRO The BC109B is a 25V Silicon NPN Bipolar Planar Epitaxial Transistor with low power. • Collector-base voltage(Vcbo = 30V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Condi...
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FZT753
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SC10981 |
Transistor, PNP, SOT223 DIODES INC. FZT753 is a 100V, 2A PNP silicon planar medium power transistor in a 4 pin SOT-223 package. • Low saturation voltage • Excellent hFE specified up to 2A • Complementary NPN type FZT653 • 2W power dissipation
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IRFB4710PBF
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SC11091 |
Power MOSFET, N Channel, 100 V, 75 A, 0.014 ohm, TO-220AB, Through Hole INFINEON The IRFB4710PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters. • Fully characterized capacitance including effective COSS to simplify design • Fu...
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N Channel | - | - | 0.014ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN360P
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SC07006 |
Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount ONSEMI The FDN360P is a surface mount, single P channel PowerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is well suited...
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P Channel | 30V | 2A | 0.08ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFPC50
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SC06289 |
Power MOSFET, N Channel, 600 V, 11 A, 0.6 ohm, TO-247AC, Through Hole VISHAY • Channel Type : N Channel • Drain Source Voltage Vds : 600V • Continuous Drain Current Id : 11A • Drain Source On State Resistance : 0.6ohm
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N Channel | 600V | 11A | 0.6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS170
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SC06956 |
Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole ONSEMI The BS170 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...
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N Channel | 60V | 500mA | 1.2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQA70N10.
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SC06322 |
Power MOSFET, N Channel, 100 V, 70 A, 0.023 ohm, TO-3P, Through Hole ONSEMI • Channel Type : N Channel • Drain Source On State Resistance : 0.023ohm
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N Channel | - | - | 0.023ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP31C
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SC06756 |
Transistor, NPN, TO220 MULTICOMP PRO The TIP31C is a high-performance transistor designed to handle high currents and voltages, making it an ideal choice for demanding applications such as audio amplifiers, power supplies, and switching circuits. With its high current handling capability and ...
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BDX34C
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SC10997 |
Darlington Transistor, TO220 STMICROELECTRONICS The BDX34C is a -100V Silicon Epitaxial Base PNP Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching...
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STP60NF06L
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SC11131 |
Power MOSFET, N Channel, 60 V, 60 A, 0.014 ohm, TO-220, Through Hole STMICROELECTRONICS The STP60NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET designed in unique sTripFET process which minimizes input capacitance and gate charge hence suitable as primary switch in ...
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N Channel | 60V | 60A | 0.014ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFU5305PBF
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SC11065 |
Power MOSFET, P Channel, 55 V, 22 A, 0.065 ohm, TO-251AA, Through Hole INFINEON • Single N-channel HEXFET® power MOSFET • Advanced process technology • Ultra low on-resistance • Fast switching • Fully avalanche rated • Dynamic dv/dt rating
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P Channel | 55V | 22A | 0.065ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP9240
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SC06075 |
Power MOSFET, P Channel, 200 V, 12 A, 0.5 ohm, TO-247AC, Through Hole VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 200V • Continuous Drain Current Id : 12A • Drain Source On State Resistance : 0.5ohm
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P Channel | 200V | 12A | 0.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLD024PBF
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SC07023 |
Power MOSFET, N Channel, 60 V, 2.5 A, 0.1 ohm, DIP, Through Hole VISHAY The IRLD024PBF is a 60V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a low cost machine-insertiable case style which ...
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N Channel | 60V | 2.5A | 0.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN2106G
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SC11051 |
Power MOSFET, N Channel, 60 V, 700 mA, 2 ohm, SOT-223, Surface Mount DIODES INC. The ZVN2106G is a 60V N-channel Enhancement Mode Vertical MOSFET with matte tin plated terminals. The MOSFET is ideal for solenoids/relay driver for automotive and DC-DC converters. • Maximum continuous drain current • AEC-Q101 qualified • UL94V-0 Flammabi...
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N Channel | 60V | 700mA | 2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF740APBF
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SC11085 |
Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole VISHAY The IRF740APBF is a 400V N-channel Power MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching. • Improved gate, avalanche and dyn...
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N Channel | 400V | 10A | 0.55ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP4668PBF
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SC11169 |
Power MOSFET, N Channel, 200 V, 130 A, 0.008 ohm, TO-247AC, Through Hole INFINEON The IRFP4668PBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET featured with improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterrupti...
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N Channel | 200V | 130A | 0.008ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856
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SC06598 |
Transistor, PNP SOT23 NXP
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FDN304P
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SC07004 |
Power MOSFET, P Channel, 20 V, 2.4 A, 0.052 ohm, SuperSOT, Surface Mount ONSEMI The FDN304P is P channel 1.8V specified PowerTrench MOSFET in superSOT-3 package. This product features fast switching speed, high performance trench technology for extremely low Rds(on), thus suite for applications such as battery management, load switch ...
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P Channel | 20V | 2.4A | 0.052ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP10NK60Z
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SC08225 |
Power MOSFET, N Channel, 600 V, 10 A, 0.75 ohm, TO-220, Through Hole STMICROELECTRONICS The STP10NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip based PowerME...
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N Channel | 600V | 10A | 0.75ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ15016G
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SC09270 |
Transistor, PNP, TO3 ONSEMI The MJ15016G is a -120V Silicon PNP Bipolar Complementary High Power Transistor designed for high power audio, disk head positioners and other linear applications. The transistor can also be used in power switching circuits such as relay or solenoid driver...
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TIP32C
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SC06765 |
Transistor, PNP, TO220 MULTICOMP PRO The TIP32C is a high-performance transistor designed to handle high currents and voltages, making it an ideal choice for demanding applications such as audio amplifiers, power supplies, and switching circuits. With its high current handling capability and ...
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ZVN2110A
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SC06963 |
Power MOSFET, N Channel, 100 V, 320 mA, 4 ohm, TO-226AA, Through Hole DIODES INC. The ZVN2110A is a 100V E-Line N-channel Enhancement Mode Vertical DMOS FET with 4Ω resistance and 700mW power dissipation.
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N Channel | 100V | 320mA | 4ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VN10LP
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SC06959 |
Power MOSFET, N Channel, 60 V, 270 mA, 7.5 ohm, TO-226AA, Through Hole DIODES INC. The VN10LP is a N-channel enhancement mode Vertical DMOS FET with matte tin-plated terminals and level-1 per J-STD-020 moisture sensitivity. • AEC-Q101 Qualified • UL94V-0 Flammability rating • Green product
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N Channel | 60V | 270mA | 7.5ohm |