Transistors
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Transistors
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Diodes | Thyristors, DIACS & TRIACS | Npn Transistors | Pnp Transistors | Photo Transistors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002LT1G
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SC11038 |
Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-23, Surface Mount ONSEMI The 2N7002LT1G is a 60V N-channel small signal MOSFET capable of 300mW power dissipation and 115mA continuous drain current. • Halogen-free/BFR-free • ±20VDC Gate to source voltage • 60VDC Drain to gate voltage • 417°C/W Thermal resistance, junction to amb...
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N Channel | 60V | 115mA | 7.5ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1404PBF
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SC11147 |
Power MOSFET, N Channel, 40 V, 162 A, 0.004 ohm, TO-220AB, Through Hole INFINEON The IRF1404PBF is a 40V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated • ...
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N Channel | 40V | 162A | 0.004ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BS170P
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SC06957 |
Power MOSFET, N Channel, 60 V, 270 mA, 5 ohm, E-Line, Through Hole DIODES INC. The BS170P is a N-channel enhancement-mode Vertical DMOSFET with moulded plastic case and solderable matte tin plated terminals as per MIL-STD-202 standard. • Halogen-free, Green device • Qualified to AEC-Q101 standards for high reliability • UL94V-0 Flamm...
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N Channel | 60V | 270mA | 5ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MPSA14
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SC10647 |
Darlington Transistor, TO92 MULTICOMP PRO The MPSA14 is a NPN Darlington Transistor with 30V collector emitter voltage and 10V emitter base voltage. • -55 to 150°C Operating junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & C...
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ZXMP6A18K
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SC11200 |
Power MOSFET, P Channel, 60 V, 10.4 A, 0.055 ohm, TO-252 (DPAK), Surface Mount DIODES INC. The ZXMP6A18K is a -60V P-channel Enhancement Mode MOSFET that utilizes a unique structure and combines the benefits of low on-resistance with fast switching speed. This makes the MOSFET ideal for high efficiency, low voltage and power management applicati...
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P Channel | 60V | 10.4A | 0.055ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC337
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SC06661 |
Transistor, NPN TO92 MULTICOMP PRO The BC337 is a NPN silicon Planar Epitaxial Transistor, suitable for use in driver and output stages of audio amplifier. • 200°C/W Junction to Ambient in Free Air Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited w...
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TIP42C
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SC07847 |
Transistor, PNP, TO220 MULTICOMP PRO The TIP42C is a -100V PNP complementary silicon plastic Power Transistor designed for use in general purpose power amplifier and switching applications. • 100V Minimum collector-emitter sustaining voltage (VCEO (sus)) • 1.5V Maximum collector-emitter satur...
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FDN335N
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SC06983 |
Power MOSFET, N Channel, 20 V, 1.7 A, 0.07 ohm, SOT-23, Surface Mount ONSEMI The FDN335N is a N-channel 2.5V specified MOSFET uses advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Low gate threshold voltage • Hi...
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N Channel | 20V | 1.7A | 0.07ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT619
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SC06630 |
Transistor, NPN, SOT23 DIODES INC. The FMMT619 from Diode Inc is a surface mount, 50V NPN silicon low saturation transistor in SOT-23 package. This transistor is moulded in plastic and "Green" moulding compound, terminal is matte tin finish. • Automotive grade AEC-Q101 qualified • UL recogn...
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FMMT720
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SC06633 |
Transistor, PNP, SOT23 DIODES INC. The FMMT720 is a PNP silicon Low Saturation Transistor with tin-plated terminals, UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FMMT619 • Level-1 per J-STD-020 moisture sensitivity •...
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ZVN3306A
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SC06964 |
Power MOSFET, N Channel, 60 V, 270 mA, 5 ohm, TO-226AA, Through Hole DIODES INC. The ZVN3306A is a N-channel enhancement-mode Vertical DMOSFET.
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N Channel | 60V | 270mA | 5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCW72
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SC06593 |
Transistor, NPN SOT23 NXP The BCW72 is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with the general purpose switching and amplification. • Low current • Low voltage • Low noise • K2 Marking code
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IRLML6402PBF
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SC07010 |
Power MOSFET, P Channel, 20 V, 3.7 A, 0.065 ohm, SOT-23, Surface Mount INFINEON The IRLML6402PBF from International Rectifier is -20V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to ...
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P Channel | 20V | 3.7A | 0.065ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC850C
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SC06590 |
Transistor, NPN SOT23 NXP
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IRLU120NPBF
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SC11073 |
Power MOSFET, N Channel, 100 V, 10 A, 0.185 ohm, TO-251AA, Through Hole INFINEON The IRLU120NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated ...
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N Channel | - | - | 0.185ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC107
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SC06644 |
Si-NPN Uni 50V 0.2A 0.3W MULTICOMP PRO The BC107 from Multicomp Pro is a low power bipolar transistor in TO-18 metal can package. This NPN silicon planar epitaxial transistor is used for general purpose switching and amplification. • Collector emitter voltage (Vce) is 45V at IC = 2mA, IB = 0 • ...
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BSS84P
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SC07003 |
Power MOSFET, P Channel, 60 V, 170 mA, 8 ohm, SOT-23, Surface Mount INFINEON • Channel Type : P Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 170mA • Drain Source On State Resistance : 8ohm
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P Channel | 60V | 170mA | 8ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP12N60C
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SC11098 |
Power MOSFET, N Channel, 600 V, 12 A, 0.53 ohm, TO-220, Through Hole ONSEMI The FQP12N60C is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and wit...
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N Channel | 600V | 12A | 0.53ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817-25
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SC06613 |
Transistor, NPN, SOT23 NXP
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IPB60R099CP
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SC11156 |
Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-263 (D2PAK), Surface Mount INFINEON • Channel Type : N Channel • Drain Source Voltage Vds : 650V • Continuous Drain Current Id : 31A • Drain Source On State Resistance : 0.09ohm
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N Channel | 650V | 31A | 0.09ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP32N50KPBF
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SC11173 |
Power MOSFET, N Channel, 500 V, 32 A, 0.16 ohm, TO-247AC, Through Hole VISHAY The IRFP32N50KPBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching and motor drive applications. • E...
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N Channel | 500V | 32A | 0.16ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP112
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SC06861 |
Darlington Transistor, TO220 STMICROELECTRONICS The TIP112 is a NPN complementary silicon epitaxial-base Power Transistor with monolithic Darlington configuration mounted in a JEDEC plastic package. It is intended for use in medium power linear and switching applications. • Integrated anti-parallel coll...
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IRF840PBF
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SC11102 |
Power MOSFET, N Channel, 500 V, 8 A, 0.85 ohm, TO-220AB, Through Hole VISHAY The IRF840PBF is a 500V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial...
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N Channel | 500V | 8A | 0.85ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX605
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SC06838 |
Darlington Transistor, E-Line DIODES INC. The ZTX605 is a 120V Silicon NPN Planar Medium Power Darlington Transistor with 1W power dissipation. • Gain of 2K at Ic = 1A
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BC846A
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SC06583 |
Transistor, NPN SOT23 NXP
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