Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

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MJ15022G
MJ15022G - Transistor, NPN, TO3

SC06781

Transistor, NPN, TO3

ONSEMI

The MJ15022G is a 200V Silicon NPN Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 350V) • Emitter-base voltage ...

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ZVN2110A
ZVN2110A - Power MOSFET, N Channel, 100 V, 320 mA, 4 ohm, TO-226AA, Through Hole

SC06963

Power MOSFET, N Channel, 100 V, 320 mA, 4 ohm, TO-226AA, Through Hole

DIODES INC.

ZVN2110A is a N-channel enhancement mode vertical DMOS FET. • Drain-source voltage is 100V • Continuous drain current at Tamb=25° is 320mA • Pulsed drain current is 6A • Gate source voltage is ±20V • Power dissipation at Tamb=25°C is 700mW • Drain-source b...

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N Channel 100V 320mA 4ohm
VN10LP
VN10LP - Power MOSFET, N Channel, 60 V, 270 mA, 5 ohm, TO-226AA, Through Hole

SC06959

Power MOSFET, N Channel, 60 V, 270 mA, 5 ohm, TO-226AA, Through Hole

DIODES INC.

The VN10LP is a N-channel enhancement mode Vertical DMOS FET with matte tin-plated terminals and level-1 per J-STD-020 moisture sensitivity. • AEC-Q101 Qualified • UL94V-0 Flammability rating • Green product

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N Channel 60V 270mA 5ohm
IRFP3710PBF.
IRFP3710PBF. - Power MOSFET, N Channel, 100 V, 57 A, 0.025 ohm, TO-247AC, Through Hole

SC11171

Power MOSFET, N Channel, 100 V, 57 A, 0.025 ohm, TO-247AC, Through Hole

INFINEON

The IRFP3710PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated

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N Channel 100V 57A 0.025ohm
BD682G
BD682G - Darlington Transistor, TO126

SC06884

Darlington Transistor, TO126

ONSEMI

The BD682G is a PNP medium-power Darlington Transistor can be used as output device in complementary general-purpose amplifier applications. • Monolithic construction • Complementary with BD681

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IPW60R045CP
IPW60R045CP - Power MOSFET, N Channel, 650 V, 60 A, 0.04 ohm, TO-247, Through Hole

SC11154

Power MOSFET, N Channel, 650 V, 60 A, 0.04 ohm, TO-247, Through Hole

INFINEON

The IPW60R045CP is a 650V N-channel CoolMOS™ Power MOSFET designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driv...

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N Channel 650V 60A 0.04ohm
MJE5731AG
MJE5731AG - Transistor, PNP TO220

SC06809

Transistor, PNP TO220

ONSEMI

The MJE5731AG is a PNP Bipolar Power Transistor designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. • PNP complements to the TIP47 thru TIP50 series

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ULN2002A
ULN2002A - Darlington Array 7 NPN, 2002, DIP16

SC08600

Darlington Array 7 NPN, 2002, DIP16

STMICROELECTRONICS

High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...

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IRF630NPBF
IRF630NPBF - Power MOSFET, N Channel, 200 V, 9.3 A, 0.3 ohm, TO-220AB, Through Hole

SC11083

Power MOSFET, N Channel, 200 V, 9.3 A, 0.3 ohm, TO-220AB, Through Hole

INFINEON

The IRF630NPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Fully avalanche rated • Dynamic dV/dt rating •...

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N Channel 200V 9.3A 0.3ohm
NTF3055L108T1G
NTF3055L108T1G - Power MOSFET, N Channel, 60 V, 3 A, 0.12 ohm, SOT-223, Surface Mount

SC11060

Power MOSFET, N Channel, 60 V, 3 A, 0.12 ohm, SOT-223, Surface Mount

ONSEMI

The NTF3055L108T1G is a N-channel logic level Power MOSFET, designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. • AEC-Q101 Qualified • PPAP capable

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N Channel 60V 3A 0.12ohm
MMUN2214LT1G
MMUN2214LT1G - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 47 kohm

SC10964

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 47 kohm

ONSEMI

The MMUN2214LT1G is a NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...

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BS270
BS270 - Power MOSFET, N Channel, 60 V, 400 mA, 2 ohm, TO-92, Through Hole

SC06958

Power MOSFET, N Channel, 60 V, 400 mA, 2 ohm, TO-92, Through Hole

ONSEMI

The BS270 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...

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N Channel 60V 400mA 2ohm
STP11NK50Z.
STP11NK50Z. - Power MOSFET, N Channel, 500 V, 10 A, 0.48 ohm, TO-220, Through Hole

SC06019

Power MOSFET, N Channel, 500 V, 10 A, 0.48 ohm, TO-220, Through Hole

STMICROELECTRONICS

• Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 10A • Drain Source On State Resistance : 0.48ohm

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N Channel 500V 10A 0.48ohm
NDS0605
NDS0605 - Power MOSFET, P Channel, 60 V, 180 mA, 5 ohm, SOT-23, Surface Mount

SC07011

Power MOSFET, P Channel, 60 V, 180 mA, 5 ohm, SOT-23, Surface Mount

ONSEMI

The NDS0605 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. It can be used, ...

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P Channel 60V 180mA 5ohm
IRFU9024PBF
IRFU9024PBF - Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-251AA, Through Hole

SC11066

Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-251AA, Through Hole

VISHAY

The IRFU9024PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power diss...

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P Channel 60V 8.8A 0.28ohm
BD679
BD679 - Darlington Transistor, TO126

SC06880

Darlington Transistor, TO126

STMICROELECTRONICS

The BD679 is a 60V Silicon NPN Complementary Power Darlington Transistor manufactured in planar base island technology with monolithic Darlington configuration. Monolithic Darlington configuration with integrated anti parallel collector-emitter diode. Fast...

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2N7002
2N7002 - MOSFET, N, SOT23

SC06978

MOSFET, N, SOT23

NXP

• Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 300mA

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- 60V 300mA -
BD437
BD437 - Transistor, NPN, TO126

SC09319

Transistor, NPN, TO126

STMICROELECTRONICS

The BD437 is a NPN silicon complementary epitaxial-base Power Transistor in a JEDEC plastic package. It is intended for use in medium power linear and switching applications. • PNP complementary type is BD438

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BC337-25
BC337-25 - Si-N 50V 0.625W 150MHz

SC06663

Si-N 50V 0.625W 150MHz

MULTICOMP PRO

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IRL520NPBF
IRL520NPBF - Power MOSFET, N Channel, 100 V, 10 A, 0.18 ohm, TO-220AB, Through Hole

SC11136

Power MOSFET, N Channel, 100 V, 10 A, 0.18 ohm, TO-220AB, Through Hole

INFINEON

The IRL520NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated •...

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N Channel 100V 10A 0.18ohm
BCW32
BCW32 - Transistor, NPN, SOT23

SC10949

Transistor, NPN, SOT23

NXP

The BCW32 is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • PNP complements are BCW29 and BCW30 • D2 Marking code

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IRF640NPBF
IRF640NPBF - Power MOSFET, N Channel, 200 V, 18 A, 0.15 ohm, TO-220AB, Through Hole

SC11077

Power MOSFET, N Channel, 200 V, 18 A, 0.15 ohm, TO-220AB, Through Hole

INFINEON

The IRF640NPBF is 200V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well kn...

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N Channel 200V 18A 0.15ohm
TIP142
TIP142 - Darlington Transistor, TO247

SC08145

Darlington Transistor, TO247

MULTICOMP PRO

The TIP142 from Multicomp Pro are through hole, darlington transistor in TO-247(3P) package. This transistor is used for low speed switching and amplification. • Collector emitter voltage (Vce) of 100V • Continuous collector current (Ic) of 10A • Power dis...

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MPSA44
MPSA44 - Transistor, NPN, TO92

SC09159

Transistor, NPN, TO92

MULTICOMP PRO

The MPSA44 is a NPN epitaxial planar silicon high voltage Transistor with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. Designed for general purpose applications requir...

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2N3439
2N3439 - Transistor, NPN TO39

SC06793

Transistor, NPN TO39

MULTICOMP PRO

The 2N3439 is a 350V Silicon NPN Bipolar Transistor intended for high voltage switching and linear amplifier applications. • Collector-base voltage(Vcbo = 450V) • Emitter-base voltage(Vebo = 7V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 mo...

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