Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

Diodes Thyristors, DIACS & TRIACS Npn Transistors Pnp Transistors Photo Transistors
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IRFP3710PBF.
IRFP3710PBF. - Power MOSFET, N Channel, 100 V, 57 A, 0.025 ohm, TO-247AC, Through Hole

SC11171

Power MOSFET, N Channel, 100 V, 57 A, 0.025 ohm, TO-247AC, Through Hole

INFINEON

The IRFP3710PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated

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N Channel 100V 57A 0.025ohm
BD682G
BD682G - Darlington Transistor, TO126

SC06884

Darlington Transistor, TO126

ONSEMI

The BD682G is a PNP medium-power Darlington Transistor can be used as output device in complementary general-purpose amplifier applications. • Monolithic construction • Complementary with BD681

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IPW60R045CP
IPW60R045CP - Power MOSFET, N Channel, 650 V, 60 A, 0.04 ohm, TO-247, Through Hole

SC11154

Power MOSFET, N Channel, 650 V, 60 A, 0.04 ohm, TO-247, Through Hole

INFINEON

The IPW60R045CP is a 650V N-channel CoolMOS™ Power MOSFET designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driv...

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N Channel 650V 60A 0.04ohm
MJE5731AG
MJE5731AG - Transistor, PNP TO220

SC06809

Transistor, PNP TO220

ONSEMI

The MJE5731AG is a PNP Bipolar Power Transistor designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. • PNP complements to the TIP47 thru TIP50 series

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FZT751
FZT751 - Transistor, PNP, SOT223

SC10976

Transistor, PNP, SOT223

DIODES INC.

The FZT751 is a PNP high performance Transistor with tin plated terminals and UL94V-0-flame rated moulded plastic case. Solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FZT651 • Level-1 per J-STD-020 moisture sensitivity • Gree...

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ULN2002A
ULN2002A - Darlington Array 7 NPN, 2002, DIP16

SC08600

Darlington Array 7 NPN, 2002, DIP16

STMICROELECTRONICS

High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...

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IRF630NPBF
IRF630NPBF - Power MOSFET, N Channel, 200 V, 9.3 A, 0.3 ohm, TO-220AB, Through Hole

SC11083

Power MOSFET, N Channel, 200 V, 9.3 A, 0.3 ohm, TO-220AB, Through Hole

INFINEON

The IRF630NPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Fully avalanche rated • Dynamic dV/dt rating •...

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N Channel 200V 9.3A 0.3ohm
NTF3055L108T1G
NTF3055L108T1G - Power MOSFET, N Channel, 60 V, 3 A, 0.12 ohm, SOT-223, Surface Mount

SC11060

Power MOSFET, N Channel, 60 V, 3 A, 0.12 ohm, SOT-223, Surface Mount

ONSEMI

The NTF3055L108T1G is a N-channel logic level Power MOSFET, designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. • AEC-Q101 Qualified • PPAP capable

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N Channel 60V 3A 0.12ohm
MMUN2214LT1G
MMUN2214LT1G - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 47 kohm

SC10964

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 47 kohm

ONSEMI

The MMUN2214LT1G is a NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...

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BS270
BS270 - Power MOSFET, N Channel, 60 V, 400 mA, 1.2 ohm, TO-92, Through Hole

SC06958

Power MOSFET, N Channel, 60 V, 400 mA, 1.2 ohm, TO-92, Through Hole

ONSEMI

The BS270 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...

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N Channel 60V 400mA 1.2ohm
NDS0605
NDS0605 - Power MOSFET, P Channel, 60 V, 180 mA, 5 ohm, SOT-23, Surface Mount

SC07011

Power MOSFET, P Channel, 60 V, 180 mA, 5 ohm, SOT-23, Surface Mount

ONSEMI

The NDS0605 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. It can be used, ...

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P Channel 60V 180mA 5ohm
IRFU9024PBF
IRFU9024PBF - Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-251AA, Through Hole

SC11066

Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-251AA, Through Hole

VISHAY

The IRFU9024PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power diss...

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P Channel 60V 8.8A 0.28ohm
BD437
BD437 - Transistor, NPN, TO126

SC09319

Transistor, NPN, TO126

STMICROELECTRONICS

The BD437 is a NPN silicon complementary epitaxial-base Power Transistor in a JEDEC plastic package. It is intended for use in medium power linear and switching applications. • PNP complementary type is BD438

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BC337-25
BC337-25 - Si-N 50V 0.625W 150MHz

SC06663

Si-N 50V 0.625W 150MHz

MULTICOMP PRO

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2N7002
2N7002 - MOSFET, N, SOT23

SC06978

MOSFET, N, SOT23

NXP

• Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 300mA

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- 60V 300mA -
IRL520NPBF
IRL520NPBF - Power MOSFET, N Channel, 100 V, 10 A, 0.18 ohm, TO-220AB, Through Hole

SC11136

Power MOSFET, N Channel, 100 V, 10 A, 0.18 ohm, TO-220AB, Through Hole

INFINEON

The IRL520NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated •...

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N Channel - - 0.18ohm
BCW32
BCW32 - Transistor, NPN, SOT23

SC10949

Transistor, NPN, SOT23

NXP

The BCW32 is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • PNP complements are BCW29 and BCW30 • D2 Marking code

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IRF640NPBF
IRF640NPBF - Power MOSFET, N Channel, 200 V, 18 A, 0.15 ohm, TO-220AB, Through Hole

SC11077

Power MOSFET, N Channel, 200 V, 18 A, 0.15 ohm, TO-220AB, Through Hole

INFINEON

The IRF640NPBF is 200V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well kn...

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N Channel 200V 18A 0.15ohm
TIP142
TIP142 - Darlington Transistor, TO247

SC08145

Darlington Transistor, TO247

MULTICOMP PRO

The TIP142 from Multicomp Pro are through hole, darlington transistor in TO-247(3P) package. This transistor is used for low speed switching and amplification. • Collector emitter voltage (Vce) of 100V • Continuous collector current (Ic) of 10A • Power dis...

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MPSA44
MPSA44 - Transistor, NPN, TO92

SC09159

Transistor, NPN, TO92

MULTICOMP PRO

The MPSA44 is a NPN epitaxial planar silicon high voltage Transistor with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. Designed for general purpose applications requir...

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MJL21193G
MJL21193G - Transistor, PNP, TO264

SC06829

Transistor, PNP, TO264

ONSEMI

The MJL21193G is a PNP Bipolar complementary Audio Power Transistor, utilizes Perforated Emitter technology. Specifically designed for high power audio output, disk head positioners and other linear applications. • Complement to MJL21194G • Excellent Gain ...

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BC817-40,215
BC817-40,215 - Transistor, NPN SOT23

SC06581

Transistor, NPN SOT23

NXP

The BC817-40 from NXP are surface mount, 45V NPN general purpose transistors in SOT-23 package. The device features high current and low voltage characteristics and suitable for general purpose switching and amplification. • Collector to emitter voltage (V...

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IRLZ44NPBF
IRLZ44NPBF - Power MOSFET, N Channel, 55 V, 47 A, 0.022 ohm, TO-220AB, Through Hole

SC11128

Power MOSFET, N Channel, 55 V, 47 A, 0.022 ohm, TO-220AB, Through Hole

INFINEON

The IRLZ44NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated • ...

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N Channel 55V 47A 0.022ohm
BC849B
BC849B - Transistor, NPN SOT23

SC06619

Transistor, NPN SOT23

ONSEMI

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BCV27
BCV27 - Transistor, NPN SOT23

SC06621

Transistor, NPN SOT23

ONSEMI

The BCV27 is a NPN Darlington Transistor designed for applications requiring extremely high current gain at currents to 1A. • Sourced from Process 05 • -55 to 150°C Operating junction temperature range

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