Transistors
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Transistors
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Diodes | Thyristors, DIACS & TRIACS | Npn Transistors | Pnp Transistors | Photo Transistors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE15030
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SC05826 |
Transistor, NPN TO220 ONSEMI
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ZTX705
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SC06840 |
Darlington Transistor, E-Line DIODES INC. The ZTX705 is a -120V E-Line Silicon PNP Planar Medium Power Darlington Transistor with silicone encapsulate that is rated to a much higher temperature than the common epoxies. It feature allows higher temperature operation, higher power rating and much hi...
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MJE3055T
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SC06752 |
Transistor, NPN, TO220 MULTICOMP PRO The MJE3055T is a 60V Silicon NPN Complementary Power Transistor designed for use in general purpose amplifier and switching applications. • DC current gain (hfe = 20 minimum at Ic = 4A) • Collector-emitter saturation voltage(Vce (sat) = 1.1V maximum at Ic...
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BD136
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SC09318 |
Transistor, PNP, TO126 STMICROELECTRONICS The BD136 is a PNP complementary epitaxial planar Low Voltage Transistor mounted in the plastic package. It is designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. • Pre-selected in DC current gain
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MJL1302AG
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SC06828 |
Transistor, PNP, TO264 ONSEMI The MJL1302AG is a -260V PNP Bipolar Complementary Power Transistor designed for use in high end consumer audio products and professional audio amplifiers such as theatre and stadium sound systems as well public address systems (PAs). • Exceptional safe op...
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STP30NF10
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SC08226 |
Power MOSFET, N Channel, 100 V, 35 A, 0.045 ohm, TO-220, Through Hole STMICROELECTRONICS The STP30NF10 is a 100V N-channel Power MOSFET developed using unique "single feature size"™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignm...
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N Channel | 100V | 35A | 0.045ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP60NF06
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SC08254 |
Power MOSFET, N Channel, 60 V, 60 A, 0.016 ohm, TO-220, Through Hole STMICROELECTRONICS The STP60NF06 is a 60V N-channel STripFET™ II Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolat...
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N Channel | 60V | 60A | 0.016ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFI830GPBF
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SC11142 |
Power MOSFET, N Channel, 500 V, 3.1 A, 1.5 ohm, TO-220FP, Through Hole VISHAY The IRFI830GPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The mouldin...
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N Channel | 500V | 3.1A | 1.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ11015G
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SC09920 |
Darlington Transistor, TO3 ONSEMI The MJ11015G from On Semiconductor is a through hole, 30A, 120V PNP darlington bipolar power transistor in TO-204AA(TO-3) package. Features high DC current gain and monolithic construction with built-in base emitter shunt resistor. It functions as an outpu...
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STP3NK60ZFP
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SC09919 |
Power MOSFET, N Channel, 600 V, 2.4 A, 3.3 ohm, TO-220FP, Through Hole STMICROELECTRONICS • Channel Type : N Channel • Drain Source Voltage Vds : 600V • Continuous Drain Current Id : 2.4A • Drain Source On State Resistance : 3.3ohm
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N Channel | 600V | 2.4A | 3.3ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856B
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SC06599 |
Transistor, PNP SOT23 NXP
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MMBF170
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SC06989 |
Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, SOT-23, Surface Mount ONSEMI The MMBF170 is a surface mount, N channel enhancement mode field effect transistors in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and provide superior switch...
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N Channel | 60V | 500mA | 5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RFP70N06
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SC08223 |
Power MOSFET, N Channel, 60 V, 70 A, 0.014 ohm, TO-220AB, Through Hole ONSEMI The RFP70N06 is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for a...
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N Channel | 60V | 70A | 0.014ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847C
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SC06615 |
Transistor, NPN, SOT23 NXP
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IRF2804PBF
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SC08252 |
Power MOSFET, N Channel, 40 V, 280 A, 0.0023 ohm, TO-220AB, Through Hole INFINEON The IRF2804PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed...
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N Channel | 40V | 280A | 0.0023ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN4106F
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SC07002 |
Power MOSFET, N Channel, 60 V, 200 mA, 2.5 ohm, SOT-23, Surface Mount DIODES INC. The ZVN4106F is a 60V N-channel Enhancement Mode Vertical DMOSFET with matte tin plated terminals solderable as per MIL-STD-202 standard, method 208. • Maximum continuous drain current • AEC-Q101 qualified • UL94V-0 Flammability rating
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N Channel | 60V | 200mA | 2.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TBD438
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SC06730 |
Transistor, PNP, TO126 MULTICOMP PRO
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FQP17P06
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SC08206 |
Power MOSFET, P Channel, 60 V, 17 A, 0.12 ohm, TO-220, Through Hole ONSEMI The FQP17P06 is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performan...
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P Channel | 60V | 17A | 0.12ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847C
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SC10952 |
Transistor, NPN, SOT23 MULTICOMP PRO The BC847C is a NPN silicon epitaxial planar Single Transistor in a surface-mount package suitable for general purpose applications. • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • 96...
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IRFP064NPBF
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SC11166 |
Power MOSFET, N Channel, 55 V, 98 A, 0.008 ohm, TO-247AC, Through Hole INFINEON The IRFP064NPBF is utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the ...
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N Channel | 55V | 98A | 0.008ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDD4243
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SC11198 |
Power MOSFET, P Channel, 40 V, 14 A, 0.036 ohm, TO-252 (DPAK), Surface Mount ONSEMI The FDD4243 is a P-channel MOSFET produced using PowerTrench® technology to deliver low RDS (ON) and optimized Bvdss capability to offer superior performance benefit in the applications. • High performance Trench technology for extremely low RDS (ON)
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P Channel | 40V | 14A | 0.036ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW14NK50Z.
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SC06408 |
Power MOSFET, N Channel, 500 V, 14 A, 0.34 ohm, TO-247, Through Hole STMICROELECTRONICS • Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 14A • Drain Source On State Resistance : 0.34ohm
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N Channel | 500V | 14A | 0.34ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N3440
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SC06794 |
Transistor, NPN TO39 MULTICOMP PRO Silicon planar NPN transistor used in high voltage and high power amplifier applications. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers would recommend to a friend
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IRF9520NPBF
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SC08219 |
Power MOSFET, P Channel, 100 V, 6.8 A, 0.48 ohm, TO-220AB, Through Hole INFINEON The IRF9520NPBF is a -100V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d...
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P Channel | - | - | 0.48ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP12NM50
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SC11151 |
Power MOSFET, N Channel, 550 V, 12 A, 0.35 ohm, TO-220, Through Hole STMICROELECTRONICS The STP12NM50 is a 500V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent ava...
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N Channel | 550V | 12A | 0.35ohm |