Transistors
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Transistors
Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.
Diodes | Thyristors, DIACS & TRIACS | Npn Transistors | Pnp Transistors | Photo Transistors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE350
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SC08528 |
Transistor, PNP, TO126 MULTICOMP PRO The MJE350 is a -300V PNP Plastic Medium Power Transistor designed for use line-operated applications such as low power, line operated series pass and switching regulator requiring PNP capability. • Collector-base voltage(Vcbo = 300V) • Emitter-base voltag...
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MJ21194G
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SC06817 |
Transistor, NPN, TO3 ONSEMI The MJ21194G is a 250V Silicon NPN Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications. • Total harmonic distortion characterized • Hig...
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ZTX853.
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SCZTX853 |
NPN 200V 4A 1200mW TO92 Q23 DIODES INC.
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TIP127
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SC06864 |
Darlington Transistor, Darlington, PNP, 100 V, 65 W, 5 A, TO-220, 3 Pins STMICROELECTRONICS The TIP127 is a NPN-PNP complementary power Darlington Transistor manufactured in Planar technology with "Base Island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low sa...
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IRFP264PBF
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SC11174 |
Power MOSFET, N Channel, 250 V, 38 A, 0.075 ohm, TO-247AC, Through Hole VISHAY The IRFP264PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package provides greater creepage distances between pins to meet the require...
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N Channel | 250V | 38A | 0.075ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807-40
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SC06597 |
Transistor, PNP SOT23 NXP
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2N4923G
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SC06736 |
Transistor, NPN, TO126 ONSEMI The 2N4923G is a 1A NPN medium-power Silicon Transistor designed for driver circuits, switching and amplifier applications. • Low saturation voltage • Excellent power dissipation due to thermopad construction • Excellent safe operating area • Complement to...
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IRFP250NPBF
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SC11079 |
Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through Hole INFINEON The IRFP250NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully aval...
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N Channel | 200V | 30A | 0.075ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP4368PBF
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SC11167 |
Power MOSFET, N Channel, 75 V, 350 A, 0.00185 ohm, TO-247AC, Through Hole INFINEON The IRFP4368PBF is a 75V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible ...
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N Channel | 75V | 350A | 0.00185ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQA24N60.
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SC06316 |
Power MOSFET, N Channel, 600 V, 23.5 A, 0.24 ohm, TO-3P, Through Hole ONSEMI • Channel Type : N Channel • Drain Source Voltage Vds : 600V • Continuous Drain Current Id : 23.5A • Drain Source On State Resistance : 0.24ohm
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N Channel | 600V | 23.5A | 0.24ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE15032G
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SC06818 |
Transistor, NPN, TO220 ONSEMI The MJE15032G is a 250V Silicon NPN Complementary Plastic Power Transistor designed for use as high frequency drivers in audio amplifiers. • High DC current gain • High current gain bandwidth • Epoxy meets UL 94V-0 rating
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TIP36C
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SC06792 |
Transistor, PNP, TO218 STMICROELECTRONICS The TIP36C is a complementary PNP Power Transistor with low collector-emitter saturation voltage. It is manufactured in planar technology with base island layout. The resulting transistor show exceptional high gain performance coupled with very low saturat...
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BSS84
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SC11030 |
Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-23, Surface Mount ONSEMI The BSS84 is P channel logic level enhancement mode field effect transistor in SOT-23 package. This product is designed to minimize on state resistance while provide rugged, reliable and fast switching performance thus BSS84 are suited for low voltage, low...
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P Channel | 50V | 130mA | 10ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC177
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SC06647 |
Transistor, PNP, TO18 MULTICOMP PRO The BC177 is a -45V Silicon PNP Bipolar Planar Epitaxial Transistor with low power. • Collector-base voltage(Vcbo = 50V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Condi...
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BC109
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SC06717 |
Transistor, NPN, TO18 MULTICOMP PRO The BC109 from Multicomp Pro are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 25V • Continuous collector current (Ic)...
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IPP60R099CP
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SC11112 |
Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-220, Through Hole INFINEON The IPP60R099CP is a 650V N-channel CoolMOS™ Power MOSFET designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driv...
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N Channel | 650V | 31A | 0.09ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF4905PBF
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SC11119 |
Power MOSFET, P Channel, 55 V, 74 A, 0.02 ohm, TO-220AB, Through Hole INFINEON The IRF4905PBF is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well kn...
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P Channel | 55V | 74A | 0.02ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCV26
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SC06604 |
Transistor, PNP SOT23 ONSEMI The BCV26 is a PNP Darlington Transistor designed for applications requiring extremely high current gain at currents to 800mA. • Sourced from Process 61 • -55 to 150°C Operating junction temperature range
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FQP27P06
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SC08209 |
Power MOSFET, P Channel, 60 V, 27 A, 0.07 ohm, TO-220, Through Hole ONSEMI The FQP27P06 is a through hole, -60V P channel QFET MOSFET in TO-220 package. This device feature planar stripe and DMOS technology which has been tailored to minimize the onstate resistance and provide superior switching performance and high avalanche ene...
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P Channel | 60V | 27A | 0.07ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN3310A
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SC06965 |
Power MOSFET, N Channel, 100 V, 200 mA, 10 ohm, TO-226AA, Through Hole DIODES INC. The ZVN3310A is a 100V E-Line N-channel Enhancement Mode Vertical DMOS FET with 10Ω resistance and 625mW power dissipation.
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N Channel | 100V | 200mA | 10ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ11033
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SC06898 |
Darlington Transistor, TO3 MULTICOMP PRO The MJ11033 is a -120V Silicon PNP Complementary Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. • High DC current gain • Monolithic construction with built-in base-emitter shunt resis...
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BUX80
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SC06803 |
Transistor, NPN, TO3 MULTICOMP PRO The BUX80 is a 400V NPN High Voltage Power Transistor designed for use in high voltage and high speed power switching in inductive circuit, motor control, solenoid and relay drivers. • Collector-emitter sustaining voltage (Vceo (sus) = 4000V minimum) • Low...
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MJL21194G
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SC06819 |
Transistor, NPN, TO264 ONSEMI The MJL21194G is a NPN complementary Bipolar Power Transistor, utilize Perforated Emitter technology. Designed for high power audio output, disk head positioners and other linear applications. • Complement to MJL21193G • Excellent Gain Linearity • Total Ha...
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BD677
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SC09211 |
Darlington Transistor, TO126 MULTICOMP PRO The BD677 is a NPN power Darlington Transistor with 60V collector base voltage and 5V emitter base voltage. • -55 to 150°C Operating junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & ...
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ZTX451
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SC10972 |
Transistor, NPN, E-Line DIODES INC. The ZTX451 is a NPN silicon planar medium power Bipolar Transistor offers 1A continuous collector current and 80V collector-base voltage. • -55 to 200°C Operating temperature range
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