Transistors
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Transistors
Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.
Diodes | Thyristors, DIACS & TRIACS | Npn Transistors | Pnp Transistors | Photo Transistors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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BU323ZG
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SC06875 |
Darlington Transistor, SOT93 ONSEMI The BU323ZG is a 350V Silicon NPN Bipolar Darlington Power Transistor with a built-in active Zener clamping circuit. The transistor is specifically designed for unclamped, inductive applications such as electronic ignition, switching regulators and motor c...
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STP11NK40Z
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SC11110 |
Power MOSFET, N Channel, 400 V, 9 A, 0.55 ohm, TO-220, Through Hole STMICROELECTRONICS The STP11NK40Z is a SuperMESH™ N-channel Zener-protected Power MOSFET obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure ...
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N Channel | 400V | 9A | 0.55ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STP7NK40Z
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SC08224 |
Power MOSFET, N Channel, 400 V, 5.4 A, 1 ohm, TO-220, Through Hole STMICROELECTRONICS The STP7NK40Z is a SuperMESH™ N-channel Zener-protected Power MOSFET obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a...
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N Channel | 400V | 5.4A | 1ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCX71H
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SC06608 |
Transistor, PNP SOT23 NXP The BCX71H is a PNP General Purpose Transistor housed in a plastic package. It is suitable for use in low level, low noise, low frequency applications in hybrid circuits, general purpose switching and amplification. • Low current • Low voltage • Low noise ...
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BC850B
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SC06589 |
Transistor, NPN SOT23 NXP The BC850B is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • PNP complements are BC859 and BC860 • 2F Marking code
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IRF4905PBF
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SC11119 |
Power MOSFET, P Channel, 55 V, 74 A, 0.02 ohm, TO-220AB, Through Hole INFINEON The IRF4905PBF is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well kn...
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P Channel | 55V | 74A | 0.02ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCV26
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SC06604 |
Transistor, PNP SOT23 ONSEMI The BCV26 is a PNP Darlington Transistor designed for applications requiring extremely high current gain at currents to 800mA. • Sourced from Process 61 • -55 to 150°C Operating junction temperature range
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SMBT2222A
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SC10624 |
Transistor, NPN, SOT23 INFINEON
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IPP60R099CP
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SC11112 |
Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-220, Through Hole INFINEON The IPP60R099CP is a 650V N-channel CoolMOS™ Power MOSFET designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driv...
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N Channel | 650V | 31A | 0.09ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC177
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SC06647 |
Transistor, PNP, TO18 MULTICOMP PRO The BC177 is a -45V Silicon PNP Bipolar Planar Epitaxial Transistor with low power. • Collector-base voltage(Vcbo = 50V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Condi...
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BC109
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SC06717 |
Transistor, NPN, TO18 MULTICOMP PRO The BC109 from Multicomp Pro are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 25V • Continuous collector current (Ic)...
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ZVN3310A
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SC06965 |
Power MOSFET, N Channel, 100 V, 200 mA, 10 ohm, TO-226AA, Through Hole DIODES INC. The ZVN3310A is a 100V E-Line N-channel Enhancement Mode Vertical DMOS FET with 10Ω resistance and 625mW power dissipation.
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N Channel | 100V | 200mA | 10ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP27P06
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SC08209 |
Power MOSFET, P Channel, 60 V, 27 A, 0.07 ohm, TO-220, Through Hole ONSEMI The FQP27P06 is a through hole, -60V P channel QFET MOSFET in TO-220 package. This device feature planar stripe and DMOS technology which has been tailored to minimize the onstate resistance and provide superior switching performance and high avalanche ene...
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P Channel | 60V | 27A | 0.07ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ11033
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SC06898 |
Darlington Transistor, TO3 MULTICOMP PRO The MJ11033 is a -120V Silicon PNP Complementary Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. • High DC current gain • Monolithic construction with built-in base-emitter shunt resis...
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BUX80
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SC06803 |
Transistor, NPN, TO3 MULTICOMP PRO The BUX80 is a 400V NPN High Voltage Power Transistor designed for use in high voltage and high speed power switching in inductive circuit, motor control, solenoid and relay drivers. • Collector-emitter sustaining voltage (Vceo (sus) = 4000V minimum) • Low...
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MJL21194G
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SC06819 |
Transistor, NPN, TO264 ONSEMI The MJL21194G is a NPN complementary Bipolar Power Transistor, utilize Perforated Emitter technology. Designed for high power audio output, disk head positioners and other linear applications. • Complement to MJL21193G • Excellent Gain Linearity • Total Ha...
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ZTX451
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SC10972 |
Transistor, NPN, E-Line DIODES INC. The ZTX451 is a NPN silicon planar medium power Bipolar Transistor offers 1A continuous collector current and 80V collector-base voltage. • -55 to 200°C Operating temperature range
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NDS7002A
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SC06992 |
Power MOSFET, N Channel, 60 V, 280 mA, 2 ohm, SOT-23, Surface Mount ONSEMI The NDS7002A is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. It minimize on-state resistance while providing rugged, reliable and fast switching performance. They can be used in most application...
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N Channel | 60V | 280mA | 2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD677
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SC09211 |
Darlington Transistor, TO126 MULTICOMP PRO The BD677 is a NPN power Darlington Transistor with 60V collector base voltage and 5V emitter base voltage. • -55 to 150°C Operating junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & ...
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IRFZ44NPBF
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SC08251 |
Power MOSFET, N Channel, 55 V, 41 A, 0.0175 ohm, TO-220AB, Through Hole INFINEON The IRFZ44NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...
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N Channel | 55V | 41A | 0.0175ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPD04N80C3
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SC11153 |
Power MOSFET, N Channel, 800 V, 4 A, 1.1 ohm, TO-252 (DPAK), Surface Mount INFINEON • Channel Type : N Channel • Drain Source Voltage Vds : 800V • Continuous Drain Current Id : 4A • Drain Source On State Resistance : 1.1ohm
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N Channel | 800V | 4A | 1.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9620
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SCIRF9620 |
Power MOSFET, P Channel, 200 V, 3.5 A, 1.5 ohm, TO-220AB, Through Hole VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 200V • Continuous Drain Current Id : 3.5A • Drain Source On State Resistance : 1.5ohm
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P Channel | 200V | 3.5A | 1.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP36NF06L
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SC11127 |
Power MOSFET, N Channel, 60 V, 30 A, 0.032 ohm, TO-220, Through Hole STMICROELECTRONICS • N-channel, 60V, 30A STripFET™ II power MOSFET • Exceptional dv/dt capability • 100% avalanche tested • Low threshold drive • Low on-resistance and rugged avalanche characteristics • Used for switching application
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N Channel | 60V | 30A | 0.032ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC109C
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SC06719 |
Transistor, NPN, TO18 MULTICOMP PRO The BC109C from Multicomp Pro are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 25V • Continuous collector current (Ic...
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PMBT4403
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SC06611 |
Transistor, PNP SOT23 NXP
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