Transistors
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Transistors
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Diodes | Thyristors, DIACS & TRIACS | Npn Transistors | Pnp Transistors | Photo Transistors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC177B
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SC06648 |
Transistor, PNP, TO18 MULTICOMP PRO The BC177B is a low power silicon planar epitaxial Bipolar Transistor with TO-18 metal can package. • 50V Collector-base voltage • 175°C/W Junction-to-case thermal resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty...
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BC857C
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SC06616 |
Transistor, PNP, SOT23 NXP
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ZTX653.
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SCZTX653 |
NPN 120V 2A 1W DIODES INC.
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IRLML5203PBF
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SC07008 |
Power MOSFET, P Channel, 30 V, 3 A, 0.098 ohm, SOT-23, Surface Mount INFINEON The IRLML5203PBF from International Rectifier is -30V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching, as a result, power MOSFET are well know to...
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P Channel | 30V | 3A | 0.098ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STN2NF10
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SC11058 |
Power MOSFET, N Channel, 100 V, 2 A, 0.23 ohm, SOT-223, Surface Mount STMICROELECTRONICS The STN2NF10 is a STripFET™ II N-channel Power MOSFET developed using unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps t...
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N Channel | 100V | 2A | 0.23ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF540NPBF
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SC08216 |
Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-220AB, Through Hole INFINEON The IRF540NPBF is 100V single N channel HEXFET power MOSFET in 3 pin TO-220AB package. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with fast switching speed and ruggedized device...
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N Channel | 100V | 33A | 0.044ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP460
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SC06074 |
Power MOSFET, N Channel, 500 V, 20 A, 0.27 ohm, TO-247AC, Through Hole VISHAY • Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 20A • Drain Source On State Resistance : 0.27ohm
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N Channel | 500V | 20A | 0.27ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP102G
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SC06859 |
Darlington Transistor, TO220 ONSEMI The TIP102G is a 8A NPN bipolar power Darlington Transistor designed for general-purpose amplifier and low speed switching applications. • Complementary device • Monolithic construction with built-in base-emitter shunt resistors
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MJE15033G
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SC06827 |
Transistor, PNP, TO220 ONSEMI The MJE15033G is a PNP Power Transistor designed for use as a high-frequency driver in audio amplifiers. High current gain bandwidth and high DC current gain. • 62.5°C/W Junction-to-ambient thermal resistance • 2.5°C/W Junction-to-case thermal resistance
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BU806
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SC06858 |
Darlington Transistor, TO220 MULTICOMP PRO The BU806 is a 200V NPN Darlington High Voltage Transistor for fast switching applications. • High current • Collector-emitter sustaining voltage (Vceo (sus) = 200V minimum) • Low collector-emitter saturation voltage • Multicomp Pro products are rated 4.6 ...
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TIP120
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SC10999 |
Darlington Transistor, TO220 STMICROELECTRONICS The TIP120 from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar technology with “base island” layout and monolithic darlington configuration resulting in exceptional high ...
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IRFP4321PBF
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SC11179 |
Power MOSFET, N Channel, 150 V, 78 A, 0.012 ohm, TO-247AC, Through Hole INFINEON The IRFP4321PBF is a HEXFET® N-channel Power MOSFET offers improved diode recovery which improves switching and EMI performance. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. • Low RDS (ON)...
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N Channel | 150V | 78A | 0.012ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP240PBF
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SC10643 |
Power MOSFET, N Channel, 200 V, 20 A, 0.18 ohm, TO-247AC, Through Hole VISHAY The IRFP240PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...
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N Channel | 200V | 20A | 0.18ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW10NK80Z.
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SC06405 |
Power MOSFET, N Channel, 800 V, 9 A, 0.78 ohm, TO-247, Through Hole STMICROELECTRONICS • Channel Type : N Channel • Drain Source Voltage Vds : 800V • Continuous Drain Current Id : 9A • Drain Source On State Resistance : 0.78ohm
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N Channel | 800V | 9A | 0.78ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN4306A
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SC06968 |
Power MOSFET, N Channel, 60 V, 1.1 A, 0.45 ohm, TO-226AA, Through Hole DIODES INC. The ZVN4306A is a 60V E-Line N-channel Enhancement Mode Vertical DMOSFET with matte tin plated terminals. The MOSFET is ideal for DC/DC convertors and solenoids/relay drivers for automotive. • Maximum continuous drain current • AEC-Q101 qualified • UL94V-0...
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N Channel | 60V | 1.1A | 0.45ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002
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SC11027 |
Power MOSFET, N Channel, 60 V, 115 mA, 1.2 ohm, SOT-23, Surface Mount ONSEMI The 2N7002 is a N-channel enhancement mode Field Effect Transistor produced using high cell density and DMOS technology. It minimizes on-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications r...
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N Channel | 60V | 115mA | 1.2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP16NF06L..
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SC11129 |
Power MOSFET, N Channel, 60 V, 16 A, 0.07 ohm, TO-220, Through Hole STMICROELECTRONICS The STP16NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET is the latest development of STMicroelectronis unique Single Feature Size strip based process, it has high packing density...
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N Channel | 60V | 16A | 0.07ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX651
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SC10970 |
Transistor, NPN, E-Line DIODES INC. The ZTX651 from Diode Inc is a through hole, 60V NPN medium power transistor in E-Line (TO-92 Compatible) package. This device is based on moulded plastic and “Green” moulding compound and terminals are matte tin finish. • Automotive grade AEC-Q101 qualifi...
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IRF9Z34NPBF
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SC11120 |
Power MOSFET, P Channel, 55 V, 17 A, 0.1 ohm, TO-220AB, Through Hole INFINEON The IRF9Z34NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...
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P Channel | 55V | 17A | 0.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP121
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SC06508 |
Power Transistor STMICROELECTRONICS The TIP121 is a complementary NPN Power Darlington Transistor with low collector-emitter saturation voltage. It is manufactured in planar technology with base island layout. The resulting transistor show exceptional high gain performance coupled with very ...
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2N2905A
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SC06713 |
Transistor, PNP, TO39 MULTICOMP PRO General purpose silicon planar PNP switching transistor. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers would recommend to a friend
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IRFR9110PBF
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SC11203 |
Power MOSFET, P Channel, 100 V, 3.1 A, 1.2 ohm, TO-252 (DPAK), Surface Mount VISHAY The IRFR9110PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave sol...
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P Channel | 100V | 3.1A | 1.2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N5195G
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SC06743 |
Transistor, PNP, TO126 ONSEMI The 2N5195G is a 4A silicon PNP Power Transistor designed for use in power amplifier and switching circuits and offers excellent safe area limits. • Complement to NPN 2N5191 and 2N5192
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ZTX553
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SC10973 |
Transistor, PNP, E-Line DIODES INC. The ZTX553 is a PNP silicon planar medium power Bipolar Transistor offers -1A continuous collector current and -120V collector-base voltage. • -55 to 200°C Operating temperature range
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MJ15023G
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SC06786 |
Transistor, PNP, TO3 ONSEMI The MJ15023G is a -200V Silicon PNP Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 350V) • Emitter-base voltage...
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