Transistors
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Transistors
Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.
Diodes | Thyristors, DIACS & TRIACS | Npn Transistors | Pnp Transistors | Photo Transistors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVP0545A
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SC06972 |
Power MOSFET, P Channel, 450 V, 45 mA, 150 ohm, E-Line, Through Hole DIODES INC. The ZVP0545A is a -450V E-Line P-channel Enhancement Mode Vertical DMOS FET with 150Ω resistance and 700mW power dissipation.
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P Channel | 450V | 45mA | 150ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSX20
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SC06709 |
Transistor, NPN, TO18 MULTICOMP PRO The BSX20 is a 15V Silicon NPN Bipolar Planar Low Power Transistor designed for high speed saturated switching applications. • Collector-base voltage(Vcbo = 40V) • Emitter-base voltage(Vebo = 4.5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12...
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ZTX753.
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SCZTX753 |
PNP 120V 2A 1W DIODES INC.
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TIP31A
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SC06755 |
Transistor, NPN, TO220 STMICROELECTRONICS The TIP31A is a 60V NPN Power Transistor manufactured in base island technology with better performance. The transistor is suitable for audio, power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduce...
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IRF5305PBF
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SC08218 |
Power MOSFET, P Channel, 55 V, 31 A, 0.06 ohm, TO-220AB, Through Hole INFINEON The IRF5305PBF is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well kn...
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P Channel | 55V | 31A | 0.06ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN0545A
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SC06961 |
Power MOSFET, N Channel, 450 V, 90 mA, 50 ohm, E-Line, Through Hole DIODES INC. The ZVN0545A is a N-channel enhancement-mode Vertical DMOSFET.
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N Channel | 450V | 90mA | 50ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP22N50APBF
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SC11094 |
Power MOSFET, N Channel, 500 V, 22 A, 0.23 ohm, TO-247AC, Through Hole VISHAY The IRFP22N50APBF is a N-channel enhancement-mode Power MOSFET with low gate charge. • Simple drive requirements • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current
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N Channel | 500V | 22A | 0.23ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC108
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SC06646 |
Transistor, NPN, TO18 MULTICOMP PRO The BC108 from Multicomp Pro are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 25V • Continuous collector current (Ic)...
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STW12NK80Z.
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SC06406 |
Power MOSFET, N Channel, 800 V, 10.5 A, 0.65 ohm, TO-247, Through Hole STMICROELECTRONICS The STW12NK80Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerME...
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N Channel | 800V | 10.5A | 0.65ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ15015G
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SC06780 |
Transistor, NPN, TO3 ONSEMI The MJ15015G is a 120V NPN complementary silicon Bipolar Transistor designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers, DC-to-DC converters, inverte...
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ZVN4206AV
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SC06967 |
Power MOSFET, N Channel, 60 V, 600 mA, 1.5 ohm, E-Line, Through Hole DIODES INC. The ZVN4206AV is a N-channel enhancement-mode Vertical DMOSFET with repetitive avalanche rating and no transient protection required. It is suitable for automotive relay drivers and stepper motor driver applications.
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N Channel | 60V | 600mA | 1.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFD9120PBF
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SC07026 |
Power MOSFET, P Channel, 100 V, 1 A, 0.6 ohm, DIP, Through Hole VISHAY The IRFD9120PBF is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which...
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P Channel | 100V | 1A | 0.6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE340
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SC06487 |
Si-N 300V 0.5A 20W Vidpow STMICROELECTRONICS The MJE340 is a 300V Silicon Planar NPN Complementary Power Transistor intended for use in medium power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • Compleme...
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BDX53CG
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SC06855 |
Darlington Transistor, TO220 ONSEMI The BDX53CG is a NPN bipolar medium-power Darlington Transistor designed for general purpose and low speed switching applications. • Complementary device • Monolithic construction with built-in base emitter shunt resistors
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BC817-16,215
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SC10625 |
Transistor, NPN, SOT23 NXP
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MJ21193G
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SC06826 |
Transistor, PNP, TO3 ONSEMI The MJ21193G is a -250V Silicon PNP Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications. • Total harmonic distortion characterized • Hi...
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STP24NF10.
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SC06020 |
Power MOSFET, N Channel, 100 V, 26 A, 0.055 ohm, TO-220, Through Hole STMICROELECTRONICS • Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 26A • Drain Source On State Resistance : 0.055ohm
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N Channel | 100V | 26A | 0.055ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP147
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SC08147 |
Darlington Transistor, TO247 MULTICOMP PRO The TIP147 is a -100V PNP Darlington Transistor designed for general purpose amplifier and low speed switching applications. • Monolithic construction with built-in base-emitter shunt resistors • Collector-emitter sustaining voltage (Vceo (sus) = 100V mini...
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ULN2804A
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SC08608 |
Darlington Array 8 NPN, 2804, DIP18 STMICROELECTRONICS The ULN2804A from STMicroelectronics is a through hole eight darlington array in DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features peak load current r...
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TIP120
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SC11000 |
Darlington Transistor, TO220 MULTICOMP PRO The TIP120 from Multicomp Pro are through hole, darlington transistor in TO-220 package. This transistor is used for low speed switching and amplification. • Collector emitter voltage (Vce) of 60V • Continuous collector current (Ic) of 5A • Power dissipati...
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BSS123
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SC06980 |
Power MOSFET, N Channel, 100 V, 170 mA, 1.2 ohm, SOT-23, Surface Mount ONSEMI The BSS123 is N channel logic level enhancement mode field effect transistor in SOT-23 package. This product is designed to minimize on state resistance while providing rugged, reliable and fast switching performance thus BSS123 are suited for low voltage,...
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N Channel | 100V | 170mA | 1.2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF820PBF
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SC11107 |
Power MOSFET, N Channel, 500 V, 2.5 A, 3 ohm, TO-220AB, Through Hole VISHAY The IRF820PBF is a 500V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industr...
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N Channel | 500V | 2.5A | 3ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX450
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SC10969 |
Transistor, NPN, E-Line DIODES INC. ZTX450 is a through hole, NPN silicon planar medium power transistor in E-Line (TO-92 Compatible) package. • Collector to emitter voltage (Vce) of 45V • Collector to base voltage of 60V • Power dissipation (Pd) of 1W • Continuous collector current of 1A • ...
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IRFZ34NPBF
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SC08250 |
Power MOSFET, N Channel, 55 V, 29 A, 0.04 ohm, TO-220AB, Through Hole INFINEON The IRFZ34NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated
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N Channel | 55V | 29A | 0.04ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP150N
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SC06218 |
Power MOSFET, N Channel, 100 V, 39 A, 0.036 ohm, TO-247AC, Through Hole INFINEON • Channel Type : N Channel • Drain Source On State Resistance : 0.036ohm
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N Channel | - | - | 0.036ohm |