Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

Diodes Thyristors, DIACS & TRIACS Npn Transistors Pnp Transistors Photo Transistors
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  Manufacturer Part No Order Code Description / Manufacturer
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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Power Dissipation Transistor Case Style Drain Source On State Resistance
 
 
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ULN2804A
ULN2804A - Darlington Array 8 NPN, 2804, DIP18

SC08608

Darlington Array 8 NPN, 2804, DIP18

STMICROELECTRONICS

The ULN2804A from STMicroelectronics is a through hole eight darlington array in DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features peak load current r...

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TIP120
TIP120 - Darlington Transistor, TO220

SC11000

Darlington Transistor, TO220

MULTICOMP PRO

The TIP120 from Multicomp Pro are through hole, darlington transistor in TO-220 package. This transistor is used for low speed switching and amplification. • Collector emitter voltage (Vce) of 60V • Continuous collector current (Ic) of 5A • Power dissipati...

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BSS123
BSS123 - Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount

SC06980

Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount

ONSEMI

The BSS123 is N channel logic level enhancement mode field effect transistor in SOT-23 package. This product is designed to minimize on state resistance while providing rugged, reliable and fast switching performance thus BSS123 are suited for low voltage,...

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N Channel 100V 170mA 360mW - 6ohm
IRF820PBF
IRF820PBF - Power MOSFET, N Channel, 500 V, 2.5 A, 3 ohm, TO-220AB, Through Hole

SC11107

Power MOSFET, N Channel, 500 V, 2.5 A, 3 ohm, TO-220AB, Through Hole

VISHAY

The IRF820PBF is a 500V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industr...

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N Channel 500V 2.5A 40W TO-220AB 3ohm
IRFZ34NPBF
IRFZ34NPBF - Power MOSFET, N Channel, 55 V, 29 A, 0.04 ohm, TO-220AB, Through Hole

SC08250

Power MOSFET, N Channel, 55 V, 29 A, 0.04 ohm, TO-220AB, Through Hole

INFINEON

The IRFZ34NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated

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N Channel 55V 29A 68W - 0.04ohm
IRFP150N
IRFP150N - Power MOSFET, N Channel, 100 V, 39 A, 0.036 ohm, TO-247AC, Through Hole

SC06218

Power MOSFET, N Channel, 100 V, 39 A, 0.036 ohm, TO-247AC, Through Hole

INFINEON

• Channel Type : N Channel • Power Dissipation : 140W • Transistor Case Style : TO-247AC • Drain Source On State Resistance : 0.036ohm

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N Channel - - 140W TO-247AC 0.036ohm
FMMT617
FMMT617 - Transistor, NPN, SOT23

SC06628

Transistor, NPN, SOT23

DIODES INC.

The FMMT617 is a NPN silicon power switching Bipolar Transistor offers 625mW power dissipation and extremely low saturation voltage. • 12A Peak pulse current • Excellent hFE characteristics up to 12A • Extremely low equivalent on resistance • PNP complemen...

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- - - 625mW SOT-23 -
ZTX450
ZTX450 - Transistor, NPN, E-Line

SC10969

Transistor, NPN, E-Line

DIODES INC.

ZTX450 is a through hole, NPN silicon planar medium power transistor in E-Line (TO-92 Compatible) package. • Collector to emitter voltage (Vce) of 45V • Collector to base voltage of 60V • Power dissipation (Pd) of 1W • Continuous collector current of 1A • ...

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- - - 1W E-Line -
BCX17
BCX17 - Transistor, PNP SOT23

SC06607

Transistor, PNP SOT23

NXP

The BCX17 is a PNP General Purpose Transistor housed in a plastic package. It is suitable for use with the saturated switching and driver applications, thick and thin-film circuits. • High current • Low voltage • NPN complement is BCX19 • T1 Marking code

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- - - 250mW SOT-23 -
FDD4685
FDD4685 - Power MOSFET, P Channel, 40 V, 32 A, 0.027 ohm, TO-252 (DPAK), Surface Mount

SC11194

Power MOSFET, P Channel, 40 V, 32 A, 0.027 ohm, TO-252 (DPAK), Surface Mount

ONSEMI

The FDD4685 is a -40V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combi...

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P Channel 40V 32A 69W - 0.027ohm
TIP35C
TIP35C - Transistor, NPN, TO247, 100V, 3MHz, 125W, 25A

SC06791

Transistor, NPN, TO247, 100V, 3MHz, 125W, 25A

STMICROELECTRONICS

The TIP35C from STMicroelectronics is a through hole complementary power transistor in TO-247 package. This device manufactured in planar technology with “base island” layout resulting in exceptional high gain performance coupled with very low saturation v...

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- - - 125W TO-247 -
IRF540NPBF
IRF540NPBF - Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-220AB, Through Hole

SC08216

Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-220AB, Through Hole

INFINEON

The IRF540NPBF is 100V single N channel HEXFET power MOSFET in 3 pin TO-220AB package. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with fast switching speed and ruggedized device...

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N Channel 100V 33A 130W - 0.044ohm
IRFP460
IRFP460 - Power MOSFET, N Channel, 500 V, 20 A, 0.27 ohm, TO-247AC, Through Hole

SC06074

Power MOSFET, N Channel, 500 V, 20 A, 0.27 ohm, TO-247AC, Through Hole

VISHAY

• Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 20A • Power Dissipation : 250W • Transistor Case Style : TO-247AC • Drain Source On State Resistance : 0.27ohm

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N Channel 500V 20A 250W TO-247AC 0.27ohm
ZTX653.
ZTX653. - NPN 120V 2A 1W

SCZTX653

NPN 120V 2A 1W

DIODES INC.

• Power Dissipation : 1W • Transistor Case Style : E-Line

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- - - 1W E-Line -
IRLML5203PBF
IRLML5203PBF - Power MOSFET, P Channel, 30 V, 3 A, 0.098 ohm, SOT-23, Surface Mount

SC07008

Power MOSFET, P Channel, 30 V, 3 A, 0.098 ohm, SOT-23, Surface Mount

INFINEON

The IRLML5203PBF from International Rectifier is -30V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching, as a result, power MOSFET are well know to...

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P Channel 30V 3A 1.25W SOT-23 0.098ohm
STN2NF10
STN2NF10 - Power MOSFET, N Channel, 100 V, 2 A, 0.26 ohm, SOT-223, Surface Mount

SC11058

Power MOSFET, N Channel, 100 V, 2 A, 0.26 ohm, SOT-223, Surface Mount

STMICROELECTRONICS

The STN2NF10 is a STripFET™ II N-channel Power MOSFET developed using unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps t...

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N Channel 100V 2A 3.3W SOT-223 0.26ohm
BC857C
BC857C - Transistor, PNP, SOT23

SC06616

Transistor, PNP, SOT23

NXP

• Power Dissipation : 250mW • Transistor Case Style : SOT-23

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- - - 250mW SOT-23 -
2N5195G
2N5195G - Transistor, PNP, TO126

SC06743

Transistor, PNP, TO126

ONSEMI

The 2N5195G is a 4A silicon PNP Power Transistor designed for use in power amplifier and switching circuits and offers excellent safe area limits. • Complement to NPN 2N5191 and 2N5192

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- - - 40W TO-225 -
ZTX553
ZTX553 - Transistor, PNP, E-Line

SC10973

Transistor, PNP, E-Line

DIODES INC.

The ZTX553 is a PNP silicon planar medium power Bipolar Transistor offers -1A continuous collector current and -120V collector-base voltage. • -55 to 200°C Operating temperature range

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- - - 1W E-Line -
MJ15023G
MJ15023G - Transistor, PNP, TO3

SC06786

Transistor, PNP, TO3

ONSEMI

The MJ15023G is a -200V Silicon PNP Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 350V) • Emitter-base voltage...

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- - - 250W TO-3 -
ZTX614
ZTX614 - Darlington Transistor, E-Line

SC06839

Darlington Transistor, E-Line

DIODES INC.

The ZTX614 is a NPN silicon planar medium-power Darlington Transistor offers 800mA continuous collector current and 120V collector-base voltage. • Gain of 10K @ IC = 500mA • -55 to 200°C Operating temperature range

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BDX33C
BDX33C - Darlington Transistor, TO220

SC06854

Darlington Transistor, TO220

STMICROELECTRONICS

The BDX33C is a NPN complementary silicon power Darlington Transistor with built-in epitaxial planar technology. Designed for use in power linear and switching applications. • Complement to BDX34C • 0.25A Base current

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ZVP4424G
ZVP4424G - Power MOSFET, P Channel, 240 V, 480 mA, 9 ohm, SOT-223, Surface Mount

SC11059

Power MOSFET, P Channel, 240 V, 480 mA, 9 ohm, SOT-223, Surface Mount

DIODES INC.

The ZVP4424G is a P-channel enhancement-mode Vertical DMOSFET with moulded plastic case and matte tin finish terminals. It is suitable for electronic hook switches and battery powered equipment applications. • Low threshold and fast switching • Halogen-fre...

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P Channel 240V 480mA 2.5W SOT-223 9ohm
TIP30A
TIP30A - Transistor, PNP, TO220

SC06763

Transistor, PNP, TO220

MULTICOMP PRO

The TIP30A is a PNP high-power Bipolar Transistor offers 0.7V (maximum) collector-emitter saturation voltage at 1A and 3MHz minimum current gain-bandwidth product at 200mA. • -65 to 150°C Operating junction temperature range • Multicomp Pro products are ra...

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- - - 30W TO-220 -
BC857,215
BC857,215 - Transistor, PNP SOT23

SC06600

Transistor, PNP SOT23

NXP

• Power Dissipation : 250mW • Transistor Case Style : SOT-23

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- - - 250mW SOT-23 -