Transistors
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Transistors
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| Diodes | Thyristors, DIACS & TRIACS | Npn Transistors | Pnp Transistors | Photo Transistors |
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF3710PBF
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SC11104 |
Power MOSFET, N Channel, 100 V, 46 A, 0.023 ohm, TO-220AB, Through Hole INFINEON The IRF3710PBF is a 100V single N-channel Advanced HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that ...
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N Channel | 100V | 46A | 0.023ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC849C
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SC06588 |
Transistor, NPN SOT23 NXP
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STP9NK50ZFP
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SC13028 |
Power MOSFET, N Channel, 500 V, 7.2 A, 0.85 ohm, TO-220FP, Through Hole STMICROELECTRONICS The STP9NK50ZFP is a 500V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...
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N Channel | 500V | 7.2A | 0.85ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC847B
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SC06614 |
Transistor, NPN, SOT23 NXP
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FDN335N
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SC06983 |
Power MOSFET, N Channel, 20 V, 1.7 A, 0.07 ohm, SOT-23, Surface Mount ONSEMI The FDN335N is a N-channel 2.5V specified MOSFET uses advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Low gate threshold voltage • Hi...
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N Channel | 20V | 1.7A | 0.07ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMP6A18K
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SC11200 |
Power MOSFET, P Channel, 60 V, 10.4 A, 0.055 ohm, TO-252 (DPAK), Surface Mount DIODES INC. The ZXMP6A18K is a -60V P-channel Enhancement Mode MOSFET that utilizes a unique structure and combines the benefits of low on-resistance with fast switching speed. This makes the MOSFET ideal for high efficiency, low voltage and power management applicati...
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P Channel | 60V | 10.4A | 0.055ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP42C
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SC07847 |
Transistor, PNP, TO220 MULTICOMP PRO The TIP42C is a -100V PNP complementary silicon plastic Power Transistor designed for use in general purpose power amplifier and switching applications. • 100V Minimum collector-emitter sustaining voltage (VCEO (sus)) • 1.5V Maximum collector-emitter satur...
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FMMT619
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SC06630 |
Transistor, NPN, SOT23 DIODES INC. The FMMT619 from Diode Inc is a surface mount, 50V NPN silicon low saturation transistor in SOT-23 package. This transistor is moulded in plastic and "Green" moulding compound, terminal is matte tin finish. • Automotive grade AEC-Q101 qualified • UL recogn...
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FMMT720
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SC06633 |
Transistor, PNP, SOT23 DIODES INC. The FMMT720 is a PNP silicon Low Saturation Transistor with tin-plated terminals, UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FMMT619 • Level-1 per J-STD-020 moisture sensitivity •...
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BC337
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SC06661 |
Transistor, NPN TO92 MULTICOMP PRO The BC337 is a NPN silicon Planar Epitaxial Transistor, suitable for use in driver and output stages of audio amplifier. • 200°C/W Junction to Ambient in Free Air Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited w...
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ZVP0545A
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SC06972 |
Power MOSFET, P Channel, 450 V, 45 mA, 150 ohm, E-Line, Through Hole DIODES INC. The ZVP0545A is a -450V E-Line P-channel Enhancement Mode Vertical DMOS FET with 150Ω resistance and 700mW power dissipation.
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P Channel | 450V | 45mA | 150ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX753.
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SCZTX753 |
PNP 120V 2A 1W Transistor DIODES INC.
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BSX20
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SC06709 |
Transistor, NPN, TO18 MULTICOMP PRO The BSX20 is a 15V Silicon NPN Bipolar Planar Low Power Transistor designed for high speed saturated switching applications. • Collector-base voltage(Vcbo = 40V) • Emitter-base voltage(Vebo = 4.5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12...
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BS270
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SC06958 |
Power MOSFET, N Channel, 60 V, 400 mA, 2 ohm, TO-92, Through Hole ONSEMI The BS270 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...
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N Channel | 60V | 400mA | 2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMUN2214LT1G
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SC10964 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 47 kohm ONSEMI The MMUN2214LT1G is a NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...
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IRFU9024PBF
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SC11066 |
Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-251AA, Through Hole VISHAY The IRFU9024PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power diss...
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P Channel | 60V | 8.8A | 0.28ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDS0605
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SC07011 |
Power MOSFET, P Channel, 60 V, 180 mA, 5 ohm, SOT-23, Surface Mount ONSEMI The NDS0605 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. It can be used, ...
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P Channel | 60V | 180mA | 5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP11NK50Z.
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SC06019 |
Power MOSFET, N Channel, 500 V, 10 A, 0.48 ohm, TO-220, Through Hole STMICROELECTRONICS • Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 10A • Drain Source On State Resistance : 0.48ohm
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N Channel | 500V | 10A | 0.48ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD679
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SC06880 |
Darlington Transistor, TO126 STMICROELECTRONICS The BD679 is a 60V Silicon NPN Complementary Power Darlington Transistor manufactured in planar base island technology with monolithic Darlington configuration. Monolithic Darlington configuration with integrated anti parallel collector-emitter diode. Fast...
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FQA70N10.
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SC06322 |
Power MOSFET, N Channel, 100 V, 70 A, 0.023 ohm, TO-3P, Through Hole ONSEMI • Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 70A • Drain Source On State Resistance : 0.023ohm
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N Channel | 100V | 70A | 0.023ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFPC50
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SC06289 |
Power MOSFET, N Channel, 600 V, 11 A, 0.6 ohm, TO-247AC, Through Hole VISHAY • Channel Type : N Channel • Drain Source Voltage Vds : 600V • Continuous Drain Current Id : 11A • Drain Source On State Resistance : 0.6ohm
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N Channel | 600V | 11A | 0.6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN360P
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SC07006 |
Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount ONSEMI The FDN360P is a surface mount, single P channel PowerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is well suited...
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P Channel | 30V | 2A | 0.08ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS170
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SC06956 |
Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, TO-92, Through Hole ONSEMI The BS170 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...
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N Channel | 60V | 500mA | 5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZT651
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SC10977 |
Transistor, NPN, SOT223 DIODES INC. The FZT651 from Diode Inc is a surface mount, 60V NPN high performance transistor in SOT-223 package. This device is based on moulded plastic and “Green” moulding compound, terminals are matte tin finish. • Automotive grade AEC-Q101 qualified • UL recogniz...
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ZXMP4A16K
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SC11204 |
Power MOSFET, P Channel, 40 V, 9.9 A, 0.06 ohm, TO-252 (DPAK), Surface Mount DIODES INC. The ZXMP4A16K is a new generation Trench P-channel enhancement-mode MOSFET from Zetex utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed. This makes it ideal for high efficiency and low voltage applications....
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P Channel | 40V | 9.9A | 0.06ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||



























