Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

Diodes Thyristors, DIACS & TRIACS Npn Transistors Pnp Transistors Photo Transistors
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IRF540ZPBF
IRF540ZPBF - Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-220AB, Through Hole

SC11108

Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-220AB, Through Hole

INFINEON

The IRF540ZPBF is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching ...

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N Channel 100V 36A 0.0265ohm
MMUN2111LT1G
MMUN2111LT1G - Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 10 kohm, 10 kohm

SC10965

Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 10 kohm, 10 kohm

ONSEMI

The MMUN2111LT1G is a PNP Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...

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IRFR9024PBF
IRFR9024PBF - Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-252 (DPAK), Surface Mount

SC11199

Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-252 (DPAK), Surface Mount

VISHAY

The IRFR9024PBF is a -60V P-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The DPAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. The straight lead version (IRFU, ...

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P Channel 60V 8.8A 0.28ohm
IRLML2402PBF
IRLML2402PBF - Power MOSFET, N Channel, 20 V, 1.2 A, 0.25 ohm, SOT-23, Surface Mount

SC06986

Power MOSFET, N Channel, 20 V, 1.2 A, 0.25 ohm, SOT-23, Surface Mount

INFINEON

The IRLML2402PBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. The international rectifier utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with...

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N Channel 20V 1.2A 0.25ohm
BC549C
BC549C - Transistor, NPN, TO92

SC12757

Transistor, NPN, TO92

MULTICOMP PRO

The BC549C from Multicomp Pro are through hole, NPN silicon planar epitaxial general purpose transistor in TO-92 metal can package. This device is typically used in driver stages of audio amplifiers, tape recorders, low noise input stages, Hi-Fi amplifiers...

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TIP31C
TIP31C - Transistor, NPN, TO220

SC06756

Transistor, NPN, TO220

MULTICOMP PRO

The TIP31C is a high-performance transistor designed to handle high currents and voltages, making it an ideal choice for demanding applications such as audio amplifiers, power supplies, and switching circuits. With its high current handling capability and ...

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BDX34C
BDX34C - Darlington Transistor, TO220

SC10997

Darlington Transistor, TO220

STMICROELECTRONICS

The BDX34C is a -100V Silicon Epitaxial Base PNP Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching...

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STP60NF06L
STP60NF06L - Power MOSFET, N Channel, 60 V, 60 A, 0.014 ohm, TO-220, Through Hole

SC11131

Power MOSFET, N Channel, 60 V, 60 A, 0.014 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP60NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET designed in unique sTripFET process which minimizes input capacitance and gate charge hence suitable as primary switch in ...

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N Channel 60V 60A 0.014ohm
IRF2907ZPBF
IRF2907ZPBF - Power MOSFET, N Channel, 75 V, 170 A, 0.0045 ohm, TO-220, Through Hole

SC08253

Power MOSFET, N Channel, 75 V, 170 A, 0.0045 ohm, TO-220, Through Hole

INFINEON

The IRF2907ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching spee...

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N Channel - - 0.0045ohm
BU406
BU406 - Transistor, NPN, TO220

SC06796

Transistor, NPN, TO220

MULTICOMP PRO

The BU406 is a NPN Power Transistor for horizontal deflection output stages of TV and CTV circuits. • High voltage • Collector-emitter sustaining voltage (Vceo (sus) = 400V minimum) • Low saturation voltage • Fast switching speed • Multicomp Pro products a...

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ZVN3310F
ZVN3310F - Power MOSFET, N Channel, 100 V, 100 mA, 10 ohm, SOT-23, Surface Mount

SC07001

Power MOSFET, N Channel, 100 V, 100 mA, 10 ohm, SOT-23, Surface Mount

DIODES INC.

The ZVN3310F is an N-channel Enhancement Mode MOSFET utilizes a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench techno...

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N Channel 100V 100mA 10ohm
IRF3205ZPBF
IRF3205ZPBF - Power MOSFET, Automotive, N Channel, 55 V, 110 A, 0.0065 ohm, TO-220AB, Through Hole

SC11149

Power MOSFET, Automotive, N Channel, 55 V, 110 A, 0.0065 ohm, TO-220AB, Through Hole

INFINEON

The IRF3205ZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and i...

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N Channel 55V 110A 0.0065ohm
HUF75339P3
HUF75339P3 - Power MOSFET, N Channel, 55 V, 75 A, 0.012 ohm, TO-220AB, Through Hole

SC12748

Power MOSFET, N Channel, 55 V, 75 A, 0.012 ohm, TO-220AB, Through Hole

ONSEMI

The HUF75339P3 is a 55V N-channel UltraFET Power MOSFET. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche...

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N Channel 55V 75A 0.012ohm
D45H8G
D45H8G - Transistor, PNP, TO220

SC06761

Transistor, PNP, TO220

ONSEMI

The D45H8G is a 10A PNP bipolar Power Transistor offers low collector-emitter saturation voltage. It can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters a...

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IRF3415PBF
IRF3415PBF - Power MOSFET, N Channel, 150 V, 37 A, 0.042 ohm, TO-220AB, Through Hole

SC11109

Power MOSFET, N Channel, 150 V, 37 A, 0.042 ohm, TO-220AB, Through Hole

INFINEON

The IRF3415PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, pr...

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N Channel 150V 37A 0.042ohm
SPW17N80C3
SPW17N80C3 - Power MOSFET, N Channel, 800 V, 17 A, 0.29 ohm, TO-247, Through Hole

SC11162

Power MOSFET, N Channel, 800 V, 17 A, 0.29 ohm, TO-247, Through Hole

INFINEON

The SPW17N80C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, extreme dv/dt rated and periodic avalanche rated. • ±20V Gate-source voltage • 260°C Soldering temperature

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N Channel 800V 17A 0.29ohm
SMBT3904
SMBT3904 - Transistor, NPN, SOT23

SC10623

Transistor, NPN, SOT23

INFINEON

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2N5551
2N5551 - Si-N 180V 0.6A 0.31W TO92 Q14

SC06652

Si-N 180V 0.6A 0.31W TO92 Q14

ONSEMI

The 2N5551 is a through hole, NPN general purpose amplifier in TO-92 package. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Collector to emitter breakdown voltage of 160V • Collector to emitter sat...

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FZT653
FZT653 - Transistor, NPN, SOT223

SC10978

Transistor, NPN, SOT223

DIODES INC.

The FZT653 is a NPN High Performance Transistor with matte tin-plated terminals, UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FZT753 • Level-1 per J-STD-020 moisture sensitivity • G...

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IRF9520PBF
IRF9520PBF - Power MOSFET, P Channel, 100 V, 6 A, 0.6 ohm, TO-220AB, Through Hole

SC11123

Power MOSFET, P Channel, 100 V, 6 A, 0.6 ohm, TO-220AB, Through Hole

VISHAY

The IRF9520PBF is a -100V P-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout...

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P Channel 100V 6A 0.6ohm
IRF9Z24NPBF
IRF9Z24NPBF - Power MOSFET, P Channel, 55 V, 12 A, 0.175 ohm, TO-220AB, Through Hole

SC11122

Power MOSFET, P Channel, 55 V, 12 A, 0.175 ohm, TO-220AB, Through Hole

INFINEON

The IRF9Z24NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...

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P Channel 55V 12A 0.175ohm
2N2222A
2N2222A - Transistor, NPN, TO18

SC06714

Transistor, NPN, TO18

MULTICOMP PRO

Silicon planar NPN switching transistor for switching and linear application, DC and VHF amplifier applications. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers would...

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ZVP3306A
ZVP3306A - Power MOSFET, P Channel, 60 V, 160 mA, 14 ohm, E-Line, Through Hole

SC06975

Power MOSFET, P Channel, 60 V, 160 mA, 14 ohm, E-Line, Through Hole

DIODES INC.

ZVP3306A is a P-channel enhancement mode vertical DMOS FET. • Drain-source voltage is -60V • Continuous drain current at Tamb=25°C is -160mA • Pulsed drain current is -1.6A • Gate-source voltage is ±20V • Power dissipation at Tamb=25°C is 625mW • Drain-sou...

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P Channel 60V 160mA 14ohm
STGW30NC120HD
STGW30NC120HD - IGBT, 60 A, 2.75 V, 220 W, 1.2 kV, TO-247, 3 Pins

SC09975

IGBT, 60 A, 2.75 V, 220 W, 1.2 kV, TO-247, 3 Pins

STMICROELECTRONICS

The STGW30NC120HD is a N-channel very fast PowerMESH™ IGBT for use with induction heating and soft switching application. Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGB...

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TIP2955
TIP2955 - Transistor, PNP, TO3P

SC06789

Transistor, PNP, TO3P

MULTICOMP PRO

The TIP2955 is a -60V Silicon PNP Complementary Power Transistor designed for general purpose amplifier and low speed switching applications. • DC current gain (hfe = 20 to 100 at Ic = 4A) • Collector-emitter saturation voltage(Vce (sat) = 1.1V maximum at ...

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