Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

Diodes Thyristors, DIACS & TRIACS Npn Transistors Pnp Transistors Photo Transistors
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IRF3710PBF
IRF3710PBF - Power MOSFET, N Channel, 100 V, 46 A, 0.023 ohm, TO-220AB, Through Hole

SC11104

Power MOSFET, N Channel, 100 V, 46 A, 0.023 ohm, TO-220AB, Through Hole

INFINEON

The IRF3710PBF is a 100V single N-channel Advanced HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that ...

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N Channel 100V 46A 0.023ohm
BC849C
BC849C - Transistor, NPN SOT23

SC06588

Transistor, NPN SOT23

NXP

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STP9NK50ZFP
STP9NK50ZFP - Power MOSFET, N Channel, 500 V, 7.2 A, 0.85 ohm, TO-220FP, Through Hole

SC13028

Power MOSFET, N Channel, 500 V, 7.2 A, 0.85 ohm, TO-220FP, Through Hole

STMICROELECTRONICS

The STP9NK50ZFP is a 500V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...

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N Channel 500V 7.2A 0.85ohm
BC847B
BC847B - Transistor, NPN, SOT23

SC06614

Transistor, NPN, SOT23

NXP

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FDN335N
FDN335N - Power MOSFET, N Channel, 20 V, 1.7 A, 0.07 ohm, SOT-23, Surface Mount

SC06983

Power MOSFET, N Channel, 20 V, 1.7 A, 0.07 ohm, SOT-23, Surface Mount

ONSEMI

The FDN335N is a N-channel 2.5V specified MOSFET uses advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Low gate threshold voltage • Hi...

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N Channel 20V 1.7A 0.07ohm
ZXMP6A18K
ZXMP6A18K - Power MOSFET, P Channel, 60 V, 10.4 A, 0.055 ohm, TO-252 (DPAK), Surface Mount

SC11200

Power MOSFET, P Channel, 60 V, 10.4 A, 0.055 ohm, TO-252 (DPAK), Surface Mount

DIODES INC.

The ZXMP6A18K is a -60V P-channel Enhancement Mode MOSFET that utilizes a unique structure and combines the benefits of low on-resistance with fast switching speed. This makes the MOSFET ideal for high efficiency, low voltage and power management applicati...

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P Channel 60V 10.4A 0.055ohm
TIP42C
TIP42C - Transistor, PNP, TO220

SC07847

Transistor, PNP, TO220

MULTICOMP PRO

The TIP42C is a -100V PNP complementary silicon plastic Power Transistor designed for use in general purpose power amplifier and switching applications. • 100V Minimum collector-emitter sustaining voltage (VCEO (sus)) • 1.5V Maximum collector-emitter satur...

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FMMT619
FMMT619 - Transistor, NPN, SOT23

SC06630

Transistor, NPN, SOT23

DIODES INC.

The FMMT619 from Diode Inc is a surface mount, 50V NPN silicon low saturation transistor in SOT-23 package. This transistor is moulded in plastic and "Green" moulding compound, terminal is matte tin finish. • Automotive grade AEC-Q101 qualified • UL recogn...

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FMMT720
FMMT720 - Transistor, PNP, SOT23

SC06633

Transistor, PNP, SOT23

DIODES INC.

The FMMT720 is a PNP silicon Low Saturation Transistor with tin-plated terminals, UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FMMT619 • Level-1 per J-STD-020 moisture sensitivity •...

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BC337
BC337 - Transistor, NPN TO92

SC06661

Transistor, NPN TO92

MULTICOMP PRO

The BC337 is a NPN silicon Planar Epitaxial Transistor, suitable for use in driver and output stages of audio amplifier. • 200°C/W Junction to Ambient in Free Air Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited w...

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ZVP0545A
ZVP0545A - Power MOSFET, P Channel, 450 V, 45 mA, 150 ohm, E-Line, Through Hole

SC06972

Power MOSFET, P Channel, 450 V, 45 mA, 150 ohm, E-Line, Through Hole

DIODES INC.

The ZVP0545A is a -450V E-Line P-channel Enhancement Mode Vertical DMOS FET with 150Ω resistance and 700mW power dissipation.

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P Channel 450V 45mA 150ohm
ZTX753.
ZTX753. - PNP 120V 2A 1W Transistor

SCZTX753

PNP 120V 2A 1W Transistor

DIODES INC.

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BSX20
BSX20 - Transistor, NPN, TO18

SC06709

Transistor, NPN, TO18

MULTICOMP PRO

The BSX20 is a 15V Silicon NPN Bipolar Planar Low Power Transistor designed for high speed saturated switching applications. • Collector-base voltage(Vcbo = 40V) • Emitter-base voltage(Vebo = 4.5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12...

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BS270
BS270 - Power MOSFET, N Channel, 60 V, 400 mA, 2 ohm, TO-92, Through Hole

SC06958

Power MOSFET, N Channel, 60 V, 400 mA, 2 ohm, TO-92, Through Hole

ONSEMI

The BS270 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...

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N Channel 60V 400mA 2ohm
MMUN2214LT1G
MMUN2214LT1G - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 47 kohm

SC10964

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 47 kohm

ONSEMI

The MMUN2214LT1G is a NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...

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IRFU9024PBF
IRFU9024PBF - Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-251AA, Through Hole

SC11066

Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-251AA, Through Hole

VISHAY

The IRFU9024PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power diss...

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P Channel 60V 8.8A 0.28ohm
NDS0605
NDS0605 - Power MOSFET, P Channel, 60 V, 180 mA, 5 ohm, SOT-23, Surface Mount

SC07011

Power MOSFET, P Channel, 60 V, 180 mA, 5 ohm, SOT-23, Surface Mount

ONSEMI

The NDS0605 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. It can be used, ...

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P Channel 60V 180mA 5ohm
STP11NK50Z.
STP11NK50Z. - Power MOSFET, N Channel, 500 V, 10 A, 0.48 ohm, TO-220, Through Hole

SC06019

Power MOSFET, N Channel, 500 V, 10 A, 0.48 ohm, TO-220, Through Hole

STMICROELECTRONICS

• Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 10A • Drain Source On State Resistance : 0.48ohm

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N Channel 500V 10A 0.48ohm
BD679
BD679 - Darlington Transistor, TO126

SC06880

Darlington Transistor, TO126

STMICROELECTRONICS

The BD679 is a 60V Silicon NPN Complementary Power Darlington Transistor manufactured in planar base island technology with monolithic Darlington configuration. Monolithic Darlington configuration with integrated anti parallel collector-emitter diode. Fast...

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FQA70N10.
FQA70N10. - Power MOSFET, N Channel, 100 V, 70 A, 0.023 ohm, TO-3P, Through Hole

SC06322

Power MOSFET, N Channel, 100 V, 70 A, 0.023 ohm, TO-3P, Through Hole

ONSEMI

• Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 70A • Drain Source On State Resistance : 0.023ohm

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N Channel 100V 70A 0.023ohm
IRFPC50
IRFPC50 - Power MOSFET, N Channel, 600 V, 11 A, 0.6 ohm, TO-247AC, Through Hole

SC06289

Power MOSFET, N Channel, 600 V, 11 A, 0.6 ohm, TO-247AC, Through Hole

VISHAY

• Channel Type : N Channel • Drain Source Voltage Vds : 600V • Continuous Drain Current Id : 11A • Drain Source On State Resistance : 0.6ohm

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N Channel 600V 11A 0.6ohm
FDN360P
FDN360P - Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount

SC07006

Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount

ONSEMI

The FDN360P is a surface mount, single P channel PowerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is well suited...

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P Channel 30V 2A 0.08ohm
BS170
BS170 - Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, TO-92, Through Hole

SC06956

Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, TO-92, Through Hole

ONSEMI

The BS170 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...

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N Channel 60V 500mA 5ohm
FZT651
FZT651 - Transistor, NPN, SOT223

SC10977

Transistor, NPN, SOT223

DIODES INC.

The FZT651 from Diode Inc is a surface mount, 60V NPN high performance transistor in SOT-223 package. This device is based on moulded plastic and “Green” moulding compound, terminals are matte tin finish. • Automotive grade AEC-Q101 qualified • UL recogniz...

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ZXMP4A16K
ZXMP4A16K - Power MOSFET, P Channel, 40 V, 9.9 A, 0.06 ohm, TO-252 (DPAK), Surface Mount

SC11204

Power MOSFET, P Channel, 40 V, 9.9 A, 0.06 ohm, TO-252 (DPAK), Surface Mount

DIODES INC.

The ZXMP4A16K is a new generation Trench P-channel enhancement-mode MOSFET from Zetex utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed. This makes it ideal for high efficiency and low voltage applications....

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P Channel 40V 9.9A 0.06ohm