Transistors
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Transistors
Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.
Diodes | Thyristors, DIACS & TRIACS | Npn Transistors | Pnp Transistors | Photo Transistors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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FZT949
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SC10991 |
Transistor, PNP, SOT223 DIODES INC. The FZT949 is a -30V PNP Complementary Medium Power High Current Transistor with matte tin plated leads solderable as per MIL-STD-202 standard, method 208. • High continuous collector current • Low saturation voltages • hFE specified up to -20A for a high ...
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IRF9530NPBF
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SC08220 |
Power MOSFET, P Channel, 100 V, 13 A, 0.2 ohm, TO-220AB, Through Hole INFINEON The IRF9530NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well ...
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P Channel | 100V | 13A | 0.2ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RFP50N06
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SC08222 |
Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm, TO-220AB, Through Hole ONSEMI The RFP50N06 is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for a...
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N Channel | 60V | 50A | 0.022ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N3906
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SC08424 |
Transistor, PNP, TO92 MULTICOMP PRO The 2N3906 from Multicomp Pro is a through hole, PNP low power, silicon planar switching transistors in TO-92 metal can package. This transistor features fast switching, hence is suitable for switching and amplification. • Collector emitter voltage (Vce) o...
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BD241C
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SC06745 |
Transistor, NPN, TO220 STMICROELECTRONICS The BD241C is a 100V Silicon NPN Complementary Power Transistor manufactured in planar technology with base island layout. The transistor shows exceptional high gain performance coupled with very low saturation voltage. Fast switching times and very low sa...
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BCX70H
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SC06594 |
Transistor, NPN SOT23 NXP The BCX70H is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with the general purpose switching and amplification. • Low current • Low voltage • AH marking code
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MJ15024G
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SC06782 |
Transistor, NPN, TO3 ONSEMI The MJ15024G is a 250V Silicon NPN Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 400V) • Emitter-base voltage ...
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IRF530NPBF
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SC08215 |
Power MOSFET, N Channel, 100 V, 17 A, 0.09 ohm, TO-220AB, Through Hole INFINEON The IRF530NPBF from Infineon is a 100V single N channel HEXFET power MOSFET in a TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and is fully avalanche rated. As a result, th...
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N Channel | 100V | 17A | 0.09ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC107B
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SC06645 |
Si-NPN Uni 50V 0.2A 0.3W MULTICOMP PRO The BC107B from Multicomp Pro is a low power bipolar transistor in TO-18 metal can package. This NPN silicon planar epitaxial transistor is used for general purpose switching and amplification. • Collector emitter voltage (Vce) is 45V at IC = 2mA, IB = 0 •...
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IRFU9024NPBF
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SC11062 |
Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-251AA, Through Hole INFINEON The IRFU9024NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d...
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P Channel | 55V | 11A | 0.175ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE15031.
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SC01309 |
Transistor, TO220 MULTICOMP PRO
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BC807-40
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SC06597 |
Transistor, PNP SOT23 NXP
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2N4923G
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SC06736 |
Transistor, NPN, TO126 ONSEMI The 2N4923G is a 1A NPN medium-power Silicon Transistor designed for driver circuits, switching and amplifier applications. • Low saturation voltage • Excellent power dissipation due to thermopad construction • Excellent safe operating area • Complement to...
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IRFP4368PBF
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SC11167 |
Power MOSFET, N Channel, 75 V, 350 A, 0.00146 ohm, TO-247AC, Through Hole INFINEON The IRFP4368PBF is a 75V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible ...
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N Channel | 75V | 350A | 0.00146ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP250NPBF
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SC11079 |
Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through Hole INFINEON The IRFP250NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully aval...
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N Channel | 200V | 30A | 0.075ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQA24N60.
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SC06316 |
Power MOSFET, N Channel, 600 V, 23.5 A, 0.24 ohm, TO-3P, Through Hole ONSEMI • Channel Type : N Channel • Drain Source On State Resistance : 0.24ohm
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N Channel | - | - | 0.24ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE15032G
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SC06818 |
Transistor, NPN, TO220 ONSEMI The MJE15032G is a 250V Silicon NPN Complementary Plastic Power Transistor designed for use as high frequency drivers in audio amplifiers. • High DC current gain • High current gain bandwidth • Epoxy meets UL 94V-0 rating
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IRF9Z24NPBF
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SC11122 |
Power MOSFET, P Channel, 55 V, 12 A, 0.175 ohm, TO-220AB, Through Hole INFINEON The IRF9Z24NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...
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P Channel | 55V | 12A | 0.175ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N2222A
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SC06714 |
Transistor, NPN, TO18 MULTICOMP PRO Silicon planar NPN switching transistor for switching and linear application, DC and VHF amplifier applications. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers would...
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ZVP3306A
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SC06975 |
Power MOSFET, P Channel, 60 V, 160 mA, 14 ohm, E-Line, Through Hole DIODES INC. The ZVP3306A is a P-channel enhancement mode Vertical DMOS FET. • AEC-Q101 Qualified
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P Channel | 60V | 160mA | 14ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZT651
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SC10977 |
Transistor, NPN, SOT223 DIODES INC. The FZT651 from Diode Inc is a surface mount, 60V NPN high performance transistor in SOT-223 package. This device is based on moulded plastic and “Green” moulding compound, terminals are matte tin finish. • Automotive grade AEC-Q101 qualified • UL recogniz...
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NDT452AP
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SC11045 |
Power MOSFET, P Channel, 30 V, 5 A, 0.065 ohm, SOT-223, Surface Mount ONSEMI The NDT452AP is a P-channel logic level enhancement mode Field Effect Transistor using high cell density and DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performanc...
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P Channel | 30V | 5A | 0.065ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP40NF10
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SC11103 |
Power MOSFET, N Channel, 100 V, 50 A, 0.025 ohm, TO-220, Through Hole STMICROELECTRONICS The STP40NF10 is a N-channel low gate charge STripFET™II Power MOSFET with single feature size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alig...
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N Channel | 100V | 50A | 0.025ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN359AN
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SC06985 |
Power MOSFET, N Channel, 30 V, 2.7 A, 0.046 ohm, SOT-23, Surface Mount ONSEMI The FDN359AN is a N-channel logic level MOSFET uses advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Suitable for low voltage and batter...
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N Channel | 30V | 2.7A | 0.046ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BDV66B
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SC06868 |
Darlington Transistor, TO247 MULTICOMP PRO The BDV66B is a -100V Silicon PNP Complementary Darlington Power Transistor having monolithic construction with built-in base-emitter shunt resistor. • Collector-emitter sustaining voltage (Vceo (sus) = 100V minimum) • Collector-emitter saturation voltage(...
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