Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

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BC33740BU
BC33740BU - Transistor, Bipolar, NPN, 45V, TO92-3

SC13992

Transistor, Bipolar, NPN, 45V, TO92-3

ONSEMI

The BC33740BU is a NPN Epitaxial Silicon Transistor suitable for AF-driver stages, low-power output stages, switching and amplifier applications. • Complement to BC327

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BC548BTA
BC548BTA - Transistor, Bipolar, NPN, 30V, TO92-3

SC13993

Transistor, Bipolar, NPN, 30V, TO92-3

ONSEMI

The BC548BTA is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Complement to BC558

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BC857B,215
BC857B,215 - Bipolar (BJT) Single Transistor, General Purpose, PNP, 45V, 100mA, 250mW, SOT-23, SMD

SC05786

Bipolar (BJT) Single Transistor, General Purpose, PNP, 45V, 100mA, 250mW, SOT-23, SMD

NEXPERIA

The BC857B,215 is a PNP Transistor in SMD plastic package with low current and voltage. Used for general purpose switching and amplification. • Complement to BC847

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BCW70,215
BCW70,215 - Bipolar (BJT) Single Transistor, PNP, 45V, 100mA, 250mW, SOT-23, SMD

SC05796

Bipolar (BJT) Single Transistor, PNP, 45V, 100mA, 250mW, SOT-23, SMD

NEXPERIA

The BCW70 is a PNP General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • NPN complements are BCW71 and BCW72 • H2 Marking code

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BC860C,215
BC860C,215 - Bipolar (BJT) Single Transistor, PNP, 45V, 100mA, 250mW, SOT-23, SMD

SC05788

Bipolar (BJT) Single Transistor, PNP, 45V, 100mA, 250mW, SOT-23, SMD

NEXPERIA

The BC860C is a PNP general purpose Transistor with 3 leads, low current and voltage, plastic surface mount package. Designed for low noise input stages of audio frequency equipment. • Complement to BC850

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2N7002NXAKR
2N7002NXAKR - Power MOSFET, Trench, N Channel, 60V, 190mA, 3 Ohm, TO-236AB, SMD

SC15954

Power MOSFET, Trench, N Channel, 60V, 190mA, 3 Ohm, TO-236AB, SMD

NEXPERIA

• Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 190mA • Drain Source On State Resistance : 3ohm

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N Channel 60V 190mA 3ohm
MMBTA42LT1G
MMBTA42LT1G - Bipolar (BJT) Single Transistor, NPN, 300V, 500mA, 225mW, SOT-23, SMD

SC16052

Bipolar (BJT) Single Transistor, NPN, 300V, 500mA, 225mW, SOT-23, SMD

ONSEMI

The MMBTA42LT1G is a 300V NPN silicon high voltage Bipolar Transistor designed for general purpose amplifier applications. The device is suitable for lower power surface mount applications. • Halogen-free/BFR-free • AEC-Q101 qualified and PPAP capable • 30...

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BC807
BC807 - Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 300mW, SOT-23, SMD

SC16110

Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 300mW, SOT-23, SMD

MULTICOMP PRO

The BC807 is a PNP Bipolar Transistor designed for general purpose amplifier applications. It has low collector-emitter saturation voltage. • High collector current • High current gain • -65 to 150°C Junction temperature range • Multicomp Pro products are ...

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BC818-40LT1G
BC818-40LT1G - Bipolar (BJT) Single Transistor, NPN, 25V, 500mA, 225mW, SOT-23, SMD

SC16100

Bipolar (BJT) Single Transistor, NPN, 25V, 500mA, 225mW, SOT-23, SMD

ONSEMI

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STN3NF06L
STN3NF06L - Power MOSFET, N Channel, 60 V, 4 A, 0.07 ohm, SOT-223, Surface Mount

SC16819

Power MOSFET, N Channel, 60 V, 4 A, 0.07 ohm, SOT-223, Surface Mount

STMICROELECTRONICS

• 60V, 4A N-channel STripFET™ II power MOSFET in a 4 pin SOT-223 package • Exceptional dv/dt capability • 100% avalanche tested • Low threshold drive • Suitable for switching applications • Specifically designed to minimize input capacitance and gate char...

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N Channel 60V 4A 0.07ohm
SQ2318AES-T1_GE3
SQ2318AES-T1_GE3 - SMD Automotive N-Channel MOSFET Transistor, SOT-23, 40V, 8A

SC16702

SMD Automotive N-Channel MOSFET Transistor, SOT-23, 40V, 8A

VISHAY

• TrenchFET® Power MOSFET • AEC-Q101 Qualified • 100% Rg and UIS Tested

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N Channel 40V 8A 0.125ohm
FDS4435BZ
FDS4435BZ - Power MOSFET, P Channel, 30 V, 8.8 A, 0.016 ohm, SOIC, Surface Mount

SC16772

Power MOSFET, P Channel, 30 V, 8.8 A, 0.016 ohm, SOIC, Surface Mount

ONSEMI

The FDS4435BZ is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches com...

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P Channel 30V 8.8A 0.016ohm
BS170-D27Z
BS170-D27Z - Power MOSFET, N Channel, 60V, 500mA, 1.2 Ohm, TO-92

SC15773

Power MOSFET, N Channel, 60V, 500mA, 1.2 Ohm, TO-92

ONSEMI

The BS170_D27Z is a N-channel enhancement-mode FET produced using high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring...

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N Channel 60V 500mA 1.2ohm
TIP122
TIP122 - Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 5A, 65W, TO-220

SC15813

Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 5A, 65W, TO-220

MULTICOMP PRO

The TIP122 is a high-performance, Darlington transistor designed to handle high currents and voltages, making it an ideal choice for demanding applications such as audio amplifiers, power supplies, and switching circuits. With its high current handling cap...

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MMBT3906LT1G
MMBT3906LT1G - Bipolar (BJT) Single Transistor, General Purpose, PNP, 40V, 200mA, 225mW, SOT-23, SMD

SC16069

Bipolar (BJT) Single Transistor, General Purpose, PNP, 40V, 200mA, 225mW, SOT-23, SMD

ONSEMI

MMBT3906LT1G is a PNP silicon general purpose transistor in a 3 pin SOT-23 package. • Collector-emitter voltage is -40VDC • Collector-base voltage is -40VDC • Collector current - continuous is -200mA DC • Total device dissipation is a 225mW • Junction and ...

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IRLML9301TRPBF
IRLML9301TRPBF - Power MOSFET, P Channel, 30 V, 3.6 A, 0.051 ohm, SOT-23, Surface Mount

SC16719

Power MOSFET, P Channel, 30 V, 3.6 A, 0.051 ohm, SOT-23, Surface Mount

INFINEON

The IRLML9301TRPBF is a P-channel HEXFET® Power MOSFET with lower switch losses, increased reliability, industry-standard pinout and compatible with existing surface mount techniques. • Multi-vendor compatibility • Environment-friendly • MSL1, Consumer qua...

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P Channel 30V 3.6A 0.051ohm
BSH111BKR
BSH111BKR - Trench Power MOSFET, N Channel, 55V, 210mA, 2.3 Ohm, SOT-23, SMD

SC16763

Trench Power MOSFET, N Channel, 55V, 210mA, 2.3 Ohm, SOT-23, SMD

NEXPERIA

The BSH111BK from Nexperia is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for relay driver, high speed line driver, low-side ...

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N Channel 55V 210mA 2.3ohm
SIR422DP-T1-GE3
SIR422DP-T1-GE3 - Power MOSFET, N Channel, 40 V, 40 A, 0.0054 ohm, PowerPAK SO, Surface Mount

SC16864

Power MOSFET, N Channel, 40 V, 40 A, 0.0054 ohm, PowerPAK SO, Surface Mount

VISHAY

The SIR422DP-T1-GE3 is a 40V N-channel TrenchFET® Power MOSFET. Suitable for use in synchronous rectification and point of load converter circuits. The N-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and wit...

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N Channel 40V 40A 0.0054ohm
DMN3404L-7
DMN3404L-7 - Power MOSFET, N Channel, 30 V, 4.2 A, 0.028 ohm, SOT-23, Surface Mount

SC16731

Power MOSFET, N Channel, 30 V, 4.2 A, 0.028 ohm, SOT-23, Surface Mount

DIODES INC.

The DMN3404L-7 is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain sup...

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N Channel 30V 4.2A 0.028ohm
DMP3056L-7
DMP3056L-7 - Power MOSFET, P Channel, 30V, 4.3A, 0.035 Ohm, SOT-23, SMD

SC15968

Power MOSFET, P Channel, 30V, 4.3A, 0.035 Ohm, SOT-23, SMD

DIODES INC.

DMP3056L-7 is a P-channel enhancement mode MOSFET. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • ...

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P Channel 30V 4.3A 0.05ohm
2N3904BU
2N3904BU - Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92

SC15757

Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92

ONSEMI

The 2N3904BU is a NPN Transistor for general purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. • 200°C/W Thermal Resistance, Junction-to-Ambient

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BC140-16
BC140-16 - Bipolar Transistor, NPN, 40V, 1A, TO-39

SC15377

Bipolar Transistor, NPN, 40V, 1A, TO-39

MULTICOMP PRO

The BC140-16 is a NPN medium Power Transistor, designed for use in power amplifier and switching applications. • 80V Collector base voltage • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for detai...

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SQJ459EP-T1_GE3
SQJ459EP-T1_GE3 - Power MOSFET, P Channel, 60 V, 52 A, 0.0155 ohm, PowerPAK SO, Surface Mount

SC16852

Power MOSFET, P Channel, 60 V, 52 A, 0.0155 ohm, PowerPAK SO, Surface Mount

VISHAY

New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...

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P Channel 60V 52A 0.0155ohm
FMMT593
FMMT593 - Bipolar (BJT) Single Transistor, PNP, 100V, 1A, 500mW, SOT-23, SMD

SC16061

Bipolar (BJT) Single Transistor, PNP, 100V, 1A, 500mW, SOT-23, SMD

DIODES INC.

The FMMT593 is a PNP silicon planar high voltage Bipolar Transistor offers -120V collector-base voltage and -1A continuous collector current. • FMMT493 Complementary NPN type • -55 to 150°C Operating temperature range

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MMBTA56LT1G
MMBTA56LT1G - Bipolar (BJT) Single Transistor, PNP, -80V, -500mA, 225mW, SOT-23

SC16075

Bipolar (BJT) Single Transistor, PNP, -80V, -500mA, 225mW, SOT-23

ONSEMI

The MMBTA56LT1G is a PNP Bipolar Transistor designed for use in linear and switching applications. The device is housed in a package which is designed for lower power surface-mount applications. • Low RDS (ON) provides higher efficiency and extends battery...

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