Transistors
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Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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STD35P6LLF6
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SC16818 |
SMD P Channel Power MOSFET, 60V, 35A, 0.025 Ohm, TO-252 (DPAK) STMICROELECTRONICS This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss
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P Channel | 60V | 35A | 0.025ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLML0060TRPBF
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SC16754 |
Power MOSFET, N Channel, 60 V, 2.7 A, 0.078 ohm, SOT-23, Surface Mount INFINEON The IRLML0060TRPBF is a N-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard Pinout • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount
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N Channel | 60V | 2.7A | 0.078ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDN327N
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SC16796 |
Power MOSFET, N Channel, 20 V, 2 A, 0.07 ohm, SuperSOT, Surface Mount ONSEMI The FDN327N is a 20V specified N-channel MOSFET uses high voltage PowerTrench® process. It has been optimized for power management and load switch applications. • Fast switching speed • 4.5nC typical low gate charge
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N Channel | 20V | 2A | 0.07ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IHW30N160R5XKSA1
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SC15923 |
IGBT Single Transistor, 60A, 1.85V, 263W, 1.6 kV, TO-247 INFINEON IHW30N160R5XKSA1 is a reverse-conducting IGBT with monolithic body diode. Applications include induction cooking and microwave ovens. • Collector-emitter voltage is 1600V, DC collector current is 39A(Tc = 100°C ) • Powerful monolithic body diode with low f...
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2N3055G
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SC15764 |
Bipolar (BJT) Single Transistor, NPN, 60V, 15A, 115W, TO-204AA ONSEMI The 2N3055G is a 60V Silicon NPN Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications. • Excellent safe operating area • DC Current gain(hFE = 20 to 70 at Ic = 4ADC) • Collector-emitter saturation voltage...
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BCX54-16,115
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SC16049 |
Bipolar (BJT) Single Transistor, NPN, 45V, 1A, 500mW, SOT-89, SMD NEXPERIA The BCX54 series 1A NPN Medium Power Transistor in a very small leadless surface-mount plastic package. • High current • Three current gain selections • High power dissipation capability • Exposed heat-sink for excellent thermal and electrical conductivity...
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BC817W,115
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SC16094 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 200mW, SOT-323, SMD NEXPERIA The BC817W series 500mA NPN General Purpose Transistor suitable for use with general purpose switching and amplification. • High current • Low voltage • BC807W PNP complement
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BC817-40
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SC16042 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 300mW, SOT-23, SMD MULTICOMP PRO The BC817-40 is a NPN Transistor for use in switching and general purpose medium power amplifier. • Complement to BC 807 • High Collector Current • High Current Gain • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Te...
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FDT457N
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SC16734 |
Power MOSFET, N Channel, 30 V, 5 A, 0.06 ohm, SOT-223, Surface Mount ONSEMI The FDT457N is a 30V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. It is ...
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N Channel | 30V | 5A | 0.06ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX7002AKVL
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SC16890 |
SMD N Channel Power MOSFET, 60V, 190mA, 3 Ohm, TO-236AB NEXPERIA The NX7002AKVL from NEXPERIA is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for relay drive, high speed line driver, low side...
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N Channel | 60V | 190mA | 3ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC33740TA
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SC15771 |
Bipolar (BJT) Single Transistor, NPN, 45 V, 800mA, 625mW, TO-92, ONSEMI The BC33740TA is a 45V NPN Epitaxial Silicon Transistor for AF-Driver stages and low power output stages. This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500mA. It is complement to BC327/BC328 swit...
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BC550CTA
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SC15786 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 500mW, TO-92 ONSEMI The BC550CTA is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Low noise • Complement to BC560
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PN2222ABU
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SC15797 |
Bipolar (BJT) Single Transistor, NPN, 40V, 1A, 625mW, TO-226AA ONSEMI The PN2222ABU is a 40V NPN Bipolar (BJT) Single Transistor for use as a medium power amplifier and switch requiring collector currents up to 500mA. This product is general usage and suitable for many different applications. • 75V Collector to base voltage ...
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BC846,215
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SC16015 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 250mW, SOT-23, SMD NEXPERIA The BC846,215 is a NPN general purpose Transistor in SMD plastic package. • Two Different Gain Selections
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IRF1404ZPBF
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SC16968 |
Power MOSFET, N Channel, 40 V, 190 A, 0.0037 ohm, TO-220AB, Through Hole INFINEON The IRF1404ZPBF is a 40V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching ...
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N Channel | 40V | 190A | 0.0037ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML6244TRPBF
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SC16790 |
Power MOSFET, N Channel, 20 V, 6.3 A, 0.021 ohm, SOT-23, Surface Mount INFINEON The IRLML6244TRPBF is a N-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount
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N Channel | 20V | 6.3A | 0.021ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SUM110P06-07L-E3
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SC16897 |
Power MOSFET, P Channel, 60 V, 110 A, 0.0055 ohm, TO-263 (D2PAK), Surface Mount VISHAY The SUM110P06-07L-E3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage • 40°C/W Junction-to-ambient thermal resistance • 0.4°C/W Junction-to-case thermal resistance
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P Channel | 60V | 110A | 0.0055ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2312BDS-T1-E3
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SC16834 |
Power MOSFET, N Channel, 20 V, 3.9 A, 0.025 ohm, SOT-23, Surface Mount VISHAY The SI2312BDS-T1-E3 is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode. • 100% Rg tested • -55 to 150°C Operating temperature range
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N Channel | 20V | 3.9A | 0.025ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS131H6327XTSA1
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SC16714 |
Power MOSFET, N Channel, 240 V, 110 mA, 7.7 ohm, SOT-23, Surface Mount INFINEON The BSS131 H6327 is a N-channel Small Signal MOSFET qualified according to AEC-Q101 standard. • Enhancement-mode • Avalanche rated • Super logic level • dV/dt Rated • Green device
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N Channel | 240V | 110mA | 7.7ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP450PBF
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SC17006 |
Power MOSFET, N Channel, 500 V, 14 A, 0.4 ohm, TO-247AC, Through Hole VISHAY The IRFP450PBF is a 500V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...
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N Channel | 500V | 14A | 0.4ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT4401LT1G
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SC16030 |
Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 225mW, SOT-23, SMD ONSEMI The MMBT4401LT1G is a 40V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications. • Halogen-free/BFR-free • AEC-Q101 qualified and PPAP capable • 60VDC Collect...
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2N7002-7-F
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SC15986 |
Power MOSFET, N Channel, 60V, 115mA, 13.5 Ohm, SOT-23, SMD DIODES INC. The 2N7002-7-F is a 60V N-channel enhancement mode Field Effect Transistor with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. This MOSFET has been designed to minimize the on-state resistance (RDS (on)) and yet ma...
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N Channel | 60V | 210mA | 13.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS250P
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SC16888 |
P Channel Power MOSFET, 45V, 230mA, 14 Ohm, E-Line DIODES INC. BS250P is a P-channel enhancement mode vertical DMOS FET. • Drain-source breakdown voltage is -45V at ID=-100µA, VGS=0V, TA=+25°C • Gate-source threshold voltage is -3.5V at ID=-1mA, VDS=VGS, TA=+25°C • Zero gate voltage drain current is -500nA max VGS=0V,...
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P Channel | 45V | 230mA | 14ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP460APBF
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SC16962 |
N Channel Power MOSFET, 500V, 20A, 0.27 Ohm, TO-247AC VISHAY • Improved gate, avalanche and dynamic dv/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Low RDS (ON)
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N Channel | 500V | 20A | 0.27ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB7430PBF
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SC16945 |
Power MOSFET, N Channel, 40 V, 195 A, 0.001 ohm, TO-220AB, Through Hole INFINEON Single N-channel StrongIRFET™ power MOSFET ideal for low frequency applications requiring performance and ruggedness. It is suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-...
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N Channel | 40V | 195A | 0.001ohm |