Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

Diodes Thyristors, DIACS & TRIACS Npn Transistors Pnp Transistors Photo Transistors
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STD35P6LLF6
STD35P6LLF6 - SMD P Channel Power MOSFET, 60V, 35A, 0.025 Ohm, TO-252 (DPAK)

SC16818

SMD P Channel Power MOSFET, 60V, 35A, 0.025 Ohm, TO-252 (DPAK)

STMICROELECTRONICS

This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss

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P Channel 60V 35A 0.025ohm
IRLML0060TRPBF
IRLML0060TRPBF - Power MOSFET, N Channel, 60 V, 2.7 A, 0.078 ohm, SOT-23, Surface Mount

SC16754

Power MOSFET, N Channel, 60 V, 2.7 A, 0.078 ohm, SOT-23, Surface Mount

INFINEON

The IRLML0060TRPBF is a N-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard Pinout • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount

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N Channel 60V 2.7A 0.078ohm
FDN327N
FDN327N - Power MOSFET, N Channel, 20 V, 2 A, 0.07 ohm, SuperSOT, Surface Mount

SC16796

Power MOSFET, N Channel, 20 V, 2 A, 0.07 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN327N is a 20V specified N-channel MOSFET uses high voltage PowerTrench® process. It has been optimized for power management and load switch applications. • Fast switching speed • 4.5nC typical low gate charge

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N Channel 20V 2A 0.07ohm
IHW30N160R5XKSA1
IHW30N160R5XKSA1 - IGBT Single Transistor, 60A, 1.85V, 263W, 1.6 kV, TO-247

SC15923

IGBT Single Transistor, 60A, 1.85V, 263W, 1.6 kV, TO-247

INFINEON

IHW30N160R5XKSA1 is a reverse-conducting IGBT with monolithic body diode. Applications include induction cooking and microwave ovens. • Collector-emitter voltage is 1600V, DC collector current is 39A(Tc = 100°C ) • Powerful monolithic body diode with low f...

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2N3055G
2N3055G - Bipolar (BJT) Single Transistor, NPN, 60V, 15A, 115W, TO-204AA

SC15764

Bipolar (BJT) Single Transistor, NPN, 60V, 15A, 115W, TO-204AA

ONSEMI

The 2N3055G is a 60V Silicon NPN Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications. • Excellent safe operating area • DC Current gain(hFE = 20 to 70 at Ic = 4ADC) • Collector-emitter saturation voltage...

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BCX54-16,115
BCX54-16,115 - Bipolar (BJT) Single Transistor, NPN, 45V, 1A, 500mW, SOT-89, SMD

SC16049

Bipolar (BJT) Single Transistor, NPN, 45V, 1A, 500mW, SOT-89, SMD

NEXPERIA

The BCX54 series 1A NPN Medium Power Transistor in a very small leadless surface-mount plastic package. • High current • Three current gain selections • High power dissipation capability • Exposed heat-sink for excellent thermal and electrical conductivity...

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BC817W,115
BC817W,115 - Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 200mW, SOT-323, SMD

SC16094

Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 200mW, SOT-323, SMD

NEXPERIA

The BC817W series 500mA NPN General Purpose Transistor suitable for use with general purpose switching and amplification. • High current • Low voltage • BC807W PNP complement

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BC817-40
BC817-40 - Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 300mW, SOT-23, SMD

SC16042

Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 300mW, SOT-23, SMD

MULTICOMP PRO

The BC817-40 is a NPN Transistor for use in switching and general purpose medium power amplifier. • Complement to BC 807 • High Collector Current • High Current Gain • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Te...

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FDT457N
FDT457N - Power MOSFET, N Channel, 30 V, 5 A, 0.06 ohm, SOT-223, Surface Mount

SC16734

Power MOSFET, N Channel, 30 V, 5 A, 0.06 ohm, SOT-223, Surface Mount

ONSEMI

The FDT457N is a 30V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. It is ...

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N Channel 30V 5A 0.06ohm
NX7002AKVL
NX7002AKVL - SMD N Channel Power MOSFET, 60V, 190mA, 3 Ohm, TO-236AB

SC16890

SMD N Channel Power MOSFET, 60V, 190mA, 3 Ohm, TO-236AB

NEXPERIA

The NX7002AKVL from NEXPERIA is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for relay drive, high speed line driver, low side...

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N Channel 60V 190mA 3ohm
BC33740TA
BC33740TA - Bipolar (BJT) Single Transistor, NPN, 45 V, 800mA, 625mW, TO-92,

SC15771

Bipolar (BJT) Single Transistor, NPN, 45 V, 800mA, 625mW, TO-92,

ONSEMI

The BC33740TA is a 45V NPN Epitaxial Silicon Transistor for AF-Driver stages and low power output stages. This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500mA. It is complement to BC327/BC328 swit...

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BC550CTA
BC550CTA - Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 500mW, TO-92

SC15786

Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 500mW, TO-92

ONSEMI

The BC550CTA is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Low noise • Complement to BC560

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PN2222ABU
PN2222ABU - Bipolar (BJT) Single Transistor, NPN, 40V, 1A, 625mW, TO-226AA

SC15797

Bipolar (BJT) Single Transistor, NPN, 40V, 1A, 625mW, TO-226AA

ONSEMI

The PN2222ABU is a 40V NPN Bipolar (BJT) Single Transistor for use as a medium power amplifier and switch requiring collector currents up to 500mA. This product is general usage and suitable for many different applications. • 75V Collector to base voltage ...

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BC846,215
BC846,215 - Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 250mW, SOT-23, SMD

SC16015

Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 250mW, SOT-23, SMD

NEXPERIA

The BC846,215 is a NPN general purpose Transistor in SMD plastic package. • Two Different Gain Selections

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IRF1404ZPBF
IRF1404ZPBF - Power MOSFET, N Channel, 40 V, 190 A, 0.0037 ohm, TO-220AB, Through Hole

SC16968

Power MOSFET, N Channel, 40 V, 190 A, 0.0037 ohm, TO-220AB, Through Hole

INFINEON

The IRF1404ZPBF is a 40V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching ...

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N Channel 40V 190A 0.0037ohm
IRLML6244TRPBF
IRLML6244TRPBF - Power MOSFET, N Channel, 20 V, 6.3 A, 0.021 ohm, SOT-23, Surface Mount

SC16790

Power MOSFET, N Channel, 20 V, 6.3 A, 0.021 ohm, SOT-23, Surface Mount

INFINEON

The IRLML6244TRPBF is a N-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount

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N Channel 20V 6.3A 0.021ohm
SUM110P06-07L-E3
SUM110P06-07L-E3 - Power MOSFET, P Channel, 60 V, 110 A, 0.0055 ohm, TO-263 (D2PAK), Surface Mount

SC16897

Power MOSFET, P Channel, 60 V, 110 A, 0.0055 ohm, TO-263 (D2PAK), Surface Mount

VISHAY

The SUM110P06-07L-E3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage • 40°C/W Junction-to-ambient thermal resistance • 0.4°C/W Junction-to-case thermal resistance

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P Channel 60V 110A 0.0055ohm
SI2312BDS-T1-E3
SI2312BDS-T1-E3 - Power MOSFET, N Channel, 20 V, 3.9 A, 0.025 ohm, SOT-23, Surface Mount

SC16834

Power MOSFET, N Channel, 20 V, 3.9 A, 0.025 ohm, SOT-23, Surface Mount

VISHAY

The SI2312BDS-T1-E3 is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode. • 100% Rg tested • -55 to 150°C Operating temperature range

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N Channel 20V 3.9A 0.025ohm
BSS131H6327XTSA1
BSS131H6327XTSA1 - Power MOSFET, N Channel, 240 V, 110 mA, 7.7 ohm, SOT-23, Surface Mount

SC16714

Power MOSFET, N Channel, 240 V, 110 mA, 7.7 ohm, SOT-23, Surface Mount

INFINEON

The BSS131 H6327 is a N-channel Small Signal MOSFET qualified according to AEC-Q101 standard. • Enhancement-mode • Avalanche rated • Super logic level • dV/dt Rated • Green device

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N Channel 240V 110mA 7.7ohm
IRFP450PBF
IRFP450PBF - Power MOSFET, N Channel, 500 V, 14 A, 0.4 ohm, TO-247AC, Through Hole

SC17006

Power MOSFET, N Channel, 500 V, 14 A, 0.4 ohm, TO-247AC, Through Hole

VISHAY

The IRFP450PBF is a 500V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...

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N Channel 500V 14A 0.4ohm
MMBT4401LT1G
MMBT4401LT1G - Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 225mW, SOT-23, SMD

SC16030

Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 225mW, SOT-23, SMD

ONSEMI

The MMBT4401LT1G is a 40V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications. • Halogen-free/BFR-free • AEC-Q101 qualified and PPAP capable • 60VDC Collect...

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2N7002-7-F
2N7002-7-F - Power MOSFET, N Channel, 60V, 115mA, 13.5 Ohm, SOT-23, SMD

SC15986

Power MOSFET, N Channel, 60V, 115mA, 13.5 Ohm, SOT-23, SMD

DIODES INC.

The 2N7002-7-F is a 60V N-channel enhancement mode Field Effect Transistor with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. This MOSFET has been designed to minimize the on-state resistance (RDS (on)) and yet ma...

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N Channel 60V 210mA 13.5ohm
BS250P
BS250P - P Channel Power MOSFET, 45V, 230mA, 14 Ohm, E-Line

SC16888

P Channel Power MOSFET, 45V, 230mA, 14 Ohm, E-Line

DIODES INC.

BS250P is a P-channel enhancement mode vertical DMOS FET. • Drain-source breakdown voltage is -45V at ID=-100µA, VGS=0V, TA=+25°C • Gate-source threshold voltage is -3.5V at ID=-1mA, VDS=VGS, TA=+25°C • Zero gate voltage drain current is -500nA max VGS=0V,...

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P Channel 45V 230mA 14ohm
IRFP460APBF
IRFP460APBF - N Channel Power MOSFET, 500V, 20A, 0.27 Ohm, TO-247AC

SC16962

N Channel Power MOSFET, 500V, 20A, 0.27 Ohm, TO-247AC

VISHAY

• Improved gate, avalanche and dynamic dv/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Low RDS (ON)

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N Channel 500V 20A 0.27ohm
IRFB7430PBF
IRFB7430PBF - Power MOSFET, N Channel, 40 V, 195 A, 0.001 ohm, TO-220AB, Through Hole

SC16945

Power MOSFET, N Channel, 40 V, 195 A, 0.001 ohm, TO-220AB, Through Hole

INFINEON

Single N-channel StrongIRFET™ power MOSFET ideal for low frequency applications requiring performance and ruggedness. It is suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-...

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N Channel 40V 195A 0.001ohm