Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

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BC856ALT1G
BC856ALT1G - Bipolar (BJT) Single Transistor, PNP, -65 , -100mA, 225mW, SOT-23

SC16053

Bipolar (BJT) Single Transistor, PNP, -65 , -100mA, 225mW, SOT-23

ONSEMI

The BC856ALT1G is a PNP general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • AEC-Q101 qualified and PPAP capable

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BC817-16LT1G
BC817-16LT1G - Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 300mW, SOT-23, SMD

SC16059

Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 300mW, SOT-23, SMD

ONSEMI

The BC817-16LT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • AEC-Q101 qualified and PPAP capable

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BSS138PS,115
BSS138PS,115 - Dual MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-363, SMD

SC15997

Dual MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-363, SMD

NEXPERIA

The BSS138PS is a dual N-channel enhancement-mode FET in a surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications. • Logic-level compati...

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N Channel - - -
BC807-25
BC807-25 - Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 310mW, SOT-23, SMD

SC16071

Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 310mW, SOT-23, SMD

DIODES INC.

The BC807-25 is a PNP small signal Bipolar Transistor ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • Epitaxial planar die construction • BC817 Complementary NPN type • Halogen-free, Green ...

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STW4N150
STW4N150 - Power MOSFET, N Channel, 1.5kV, 4A, 7 ohm, TO-247,

SC15828

Power MOSFET, N Channel, 1.5kV, 4A, 7 ohm, TO-247,

STMICROELECTRONICS

The STW4N150 is a 1500V N-channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY™ process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate cha...

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N Channel 1.5kV 4A 7ohm
BC846A
BC846A - Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 300mW, SOT-23, SMD

SC16085

Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 300mW, SOT-23, SMD

DIODES INC.

The BC846A is a NPN small signal Bipolar Transistor ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • BC856 - BC858 Complementary PNP types • Halogen-free, Green device • -65 to 150°C Operati...

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FDN352AP
FDN352AP - Power MOSFET, P Channel, 30 V, 1.3 A, 0.18 ohm, SuperSOT, Surface Mount

SC16755

Power MOSFET, P Channel, 30 V, 1.3 A, 0.18 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN352AP is a P-channel Logic Level MOSFET produced using advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. This device is well suit...

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P Channel 30V 1.3A 0.18ohm
BSN20BKR
BSN20BKR - Power MOSFET, Trench, N Channel, 60V, 265mA, 2.1 Ohm, SOT-23, SMD

SC16765

Power MOSFET, Trench, N Channel, 60V, 265mA, 2.1 Ohm, SOT-23, SMD

NEXPERIA

The BSN20BK from Nexperia is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for relay drivers, high speed line drivers, low-side...

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N Channel 60V 265mA 2.1ohm
DMP6023LE-13
DMP6023LE-13 - Power MOSFET, P Channel, 60V, 18.2A, 0.028 Ohm, SOT-223, SMD

SC15971

Power MOSFET, P Channel, 60V, 18.2A, 0.028 Ohm, SOT-223, SMD

DIODES INC.

DMP6023LE-13 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications ...

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P Channel 60V 18.2A 0.028ohm
SI2301CDS-T1-GE3
SI2301CDS-T1-GE3 - Power MOSFET, P Channel, 20 V, 3.1 A, 0.09 ohm, SOT-23, Surface Mount

SC16862

Power MOSFET, P Channel, 20 V, 3.1 A, 0.09 ohm, SOT-23, Surface Mount

VISHAY

The SI2301CDS-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications. • Halogen-free • -55 to 150°C Operating temperature range

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P Channel 20V 3.1A 0.09ohm
2N7002K-7
2N7002K-7 - Power MOSFET, N Channel, 60V, 300mA, 2 Ohm, SOT-23, SMD

SC15985

Power MOSFET, N Channel, 60V, 300mA, 2 Ohm, SOT-23, SMD

DIODES INC.

The 2N7002K-7 is an N-channel Enhancement Mode MOSFET designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It features molded green plasti...

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N Channel 60V 380mA 2ohm
BC817-40LT1G
BC817-40LT1G - Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 225mW, SOT-23, SMD

SC16051

Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 225mW, SOT-23, SMD

ONSEMI

The BC817-40LT1G is a 45V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications, ESD protection, polarity reversal protection, data line protection, inductive...

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MJD45H11G
MJD45H11G - Bipolar (BJT) Single Transistor, Audio, PNP, 80V, 8A, 20W, TO-252 (DPAK), SMD

SC16105

Bipolar (BJT) Single Transistor, Audio, PNP, 80V, 8A, 20W, TO-252 (DPAK), SMD

ONSEMI

The MJD45H11G is a 8A PNP bipolar Power Transistor designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers. • Electrically similar to popular D44H/D45H series • ...

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2N3904TA
2N3904TA - Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92

SC15823

Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92

ONSEMI

The 2N3904 is a through hole, NPN general purpose transistor in TO-92 package which is designed for amplifier and switch application. The dynamic range of device extends to 100mA while operating as switch and it will be 100MHz for amplifier. • Collector to...

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BSS138LT3G
BSS138LT3G - Power MOSFET, N Channel, 50V, 200mA, 5.6 Ohm, SOT-23, SMD

SC15999

Power MOSFET, N Channel, 50V, 200mA, 5.6 Ohm, SOT-23, SMD

ONSEMI

The BSS138LT3G is a N-channel Power MOSFET with low threshold voltage and ideal for low voltage applications. Miniature surface mount package saves board space. • ±20VDC Continuous gate-to-source voltage • 556°C/W Junction-to-ambient thermal resistance

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N Channel 50V 200mA 5.6ohm
BC807-25,215
BC807-25,215 - Bipolar (BJT) Single Transistor, PNP, 45V, -500mA, 250mW, SOT-23, SMD

SC16016

Bipolar (BJT) Single Transistor, PNP, 45V, -500mA, 250mW, SOT-23, SMD

NEXPERIA

The BC807-25 is a PNP general purpose Transistor with 3 leads, high current and low voltage, plastic surface mount package. Designed for switching and amplification applications. • 150°C Junction temperature • 5pF Collector capacitance

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SUM110P04-05-E3
SUM110P04-05-E3 - Power MOSFET, P Channel, 40 V, 110 A, 0.0041 ohm, TO-263 (D2PAK), Surface Mount

SC16869

Power MOSFET, P Channel, 40 V, 110 A, 0.0041 ohm, TO-263 (D2PAK), Surface Mount

VISHAY

The SUM110P04-05-E3 is a -40V P-channel TrenchFET® Power MOSFET.

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P Channel 40V 110A 0.0041ohm
ZXMN6A07FTA
ZXMN6A07FTA - Power MOSFET, N Channel, 60 V, 1.4 A, 0.25 ohm, SOT-23, Surface Mount

SC16749

Power MOSFET, N Channel, 60 V, 1.4 A, 0.25 ohm, SOT-23, Surface Mount

DIODES INC.

The ZXMN6A07FTA is a N-channel Enhancement Mode MOSFET with matte tin-plated terminals and UL94V-0 flame-rated moulded plastic case. This MOSFET utilizes an unique structure combining the benefits of low on-state resistance with fast switching speed. • Low...

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N Channel 60V 1.4A 0.25ohm
BSS84W-7-F
BSS84W-7-F - Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-323, Surface Mount

SC16773

Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-323, Surface Mount

DIODES INC.

The BSS84W-7-F is a P-channel enhancement-mode FET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain supe...

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P Channel 50V 130mA 10ohm
FDS9435A
FDS9435A - Power MOSFET, P Channel, 30 V, 5.3 A, 0.042 ohm, SOIC, Surface Mount

SC16915

Power MOSFET, P Channel, 30 V, 5.3 A, 0.042 ohm, SOIC, Surface Mount

ONSEMI

The FDS9435A is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The medium voltage power MOSFET is optimized power switches combining s...

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P Channel 30V 5.3A 0.042ohm
SI4447ADY-T1-GE3
SI4447ADY-T1-GE3 - Power MOSFET, P Channel, 40 V, 7.2 A, 0.036 ohm, SOIC, Surface Mount

SC16775

Power MOSFET, P Channel, 40 V, 7.2 A, 0.036 ohm, SOIC, Surface Mount

VISHAY

• 40V, 7.2A, P-channel TrenchFET® power MOSFET in 8 pin SOIC package • 100% Rg tested • 100 % UIS tested • Suitable for load switches, adaptor switch and notebook PCs

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P Channel 40V 7.2A 0.036ohm
TN0702N3-G
TN0702N3-G - N Channel Power MOSFET, 20V, 530mA, 1 Ohm, TO-92

SC17007

N Channel Power MOSFET, 20V, 530mA, 1 Ohm, TO-92

MICROCHIP

This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...

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N Channel 20V 530mA 1ohm
BC857BLT1G
BC857BLT1G - Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 225mW, SOT-23

SC16057

Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 225mW, SOT-23

ONSEMI

The BC857BLT1G is a -45V PNP silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications. • Halogen-free/BFR-free • -50V Collector to base voltage (VCBO) • -5V Emitter ...

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STW45NM50
STW45NM50 - Power MOSFET, N Channel, 550V, 45A, 0.1 ohm, TO-247,

SC15829

Power MOSFET, N Channel, 550V, 45A, 0.1 ohm, TO-247,

STMICROELECTRONICS

The STW45NM50 is a 550V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent ava...

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N Channel 550V 45A 0.1ohm
NDS332P
NDS332P - Power MOSFET, P Channel, 20 V, 1 A, 0.3 ohm, SuperSOT, Surface Mount

SC16872

Power MOSFET, P Channel, 20 V, 1 A, 0.3 ohm, SuperSOT, Surface Mount

ONSEMI

The NDS332P is a P-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage application...

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P Channel 20V 1A 0.3ohm