Transistors
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Transistors
Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.
Diodes | Thyristors, DIACS & TRIACS | Npn Transistors | Pnp Transistors | Photo Transistors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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BC856ALT1G
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SC16053 |
Bipolar (BJT) Single Transistor, PNP, -65 , -100mA, 225mW, SOT-23 ONSEMI The BC856ALT1G is a PNP general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • AEC-Q101 qualified and PPAP capable
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BC817-16LT1G
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SC16059 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 300mW, SOT-23, SMD ONSEMI The BC817-16LT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • AEC-Q101 qualified and PPAP capable
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BSS138PS,115
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SC15997 |
Dual MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-363, SMD NEXPERIA The BSS138PS is a dual N-channel enhancement-mode FET in a surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications. • Logic-level compati...
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BC807-25
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SC16071 |
Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 310mW, SOT-23, SMD DIODES INC. The BC807-25 is a PNP small signal Bipolar Transistor ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • Epitaxial planar die construction • BC817 Complementary NPN type • Halogen-free, Green ...
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STW4N150
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SC15828 |
Power MOSFET, N Channel, 1.5kV, 4A, 7 ohm, TO-247, STMICROELECTRONICS The STW4N150 is a 1500V N-channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY™ process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate cha...
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N Channel | 1.5kV | 4A | 7ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846A
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SC16085 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 300mW, SOT-23, SMD DIODES INC. The BC846A is a NPN small signal Bipolar Transistor ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • BC856 - BC858 Complementary PNP types • Halogen-free, Green device • -65 to 150°C Operati...
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FDN352AP
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SC16755 |
Power MOSFET, P Channel, 30 V, 1.3 A, 0.18 ohm, SuperSOT, Surface Mount ONSEMI The FDN352AP is a P-channel Logic Level MOSFET produced using advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. This device is well suit...
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P Channel | 30V | 1.3A | 0.18ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSN20BKR
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SC16765 |
Power MOSFET, Trench, N Channel, 60V, 265mA, 2.1 Ohm, SOT-23, SMD NEXPERIA The BSN20BK from Nexperia is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for relay drivers, high speed line drivers, low-side...
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N Channel | 60V | 265mA | 2.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP6023LE-13
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SC15971 |
Power MOSFET, P Channel, 60V, 18.2A, 0.028 Ohm, SOT-223, SMD DIODES INC. DMP6023LE-13 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications ...
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P Channel | 60V | 18.2A | 0.028ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2301CDS-T1-GE3
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SC16862 |
Power MOSFET, P Channel, 20 V, 3.1 A, 0.09 ohm, SOT-23, Surface Mount VISHAY The SI2301CDS-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications. • Halogen-free • -55 to 150°C Operating temperature range
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P Channel | 20V | 3.1A | 0.09ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002K-7
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SC15985 |
Power MOSFET, N Channel, 60V, 300mA, 2 Ohm, SOT-23, SMD DIODES INC. The 2N7002K-7 is an N-channel Enhancement Mode MOSFET designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It features molded green plasti...
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N Channel | 60V | 380mA | 2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817-40LT1G
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SC16051 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 225mW, SOT-23, SMD ONSEMI The BC817-40LT1G is a 45V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications, ESD protection, polarity reversal protection, data line protection, inductive...
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MJD45H11G
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SC16105 |
Bipolar (BJT) Single Transistor, Audio, PNP, 80V, 8A, 20W, TO-252 (DPAK), SMD ONSEMI The MJD45H11G is a 8A PNP bipolar Power Transistor designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers. • Electrically similar to popular D44H/D45H series • ...
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2N3904TA
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SC15823 |
Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92 ONSEMI The 2N3904 is a through hole, NPN general purpose transistor in TO-92 package which is designed for amplifier and switch application. The dynamic range of device extends to 100mA while operating as switch and it will be 100MHz for amplifier. • Collector to...
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BSS138LT3G
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SC15999 |
Power MOSFET, N Channel, 50V, 200mA, 5.6 Ohm, SOT-23, SMD ONSEMI The BSS138LT3G is a N-channel Power MOSFET with low threshold voltage and ideal for low voltage applications. Miniature surface mount package saves board space. • ±20VDC Continuous gate-to-source voltage • 556°C/W Junction-to-ambient thermal resistance
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N Channel | 50V | 200mA | 5.6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807-25,215
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SC16016 |
Bipolar (BJT) Single Transistor, PNP, 45V, -500mA, 250mW, SOT-23, SMD NEXPERIA The BC807-25 is a PNP general purpose Transistor with 3 leads, high current and low voltage, plastic surface mount package. Designed for switching and amplification applications. • 150°C Junction temperature • 5pF Collector capacitance
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SUM110P04-05-E3
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SC16869 |
Power MOSFET, P Channel, 40 V, 110 A, 0.0041 ohm, TO-263 (D2PAK), Surface Mount VISHAY The SUM110P04-05-E3 is a -40V P-channel TrenchFET® Power MOSFET.
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P Channel | 40V | 110A | 0.0041ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMN6A07FTA
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SC16749 |
Power MOSFET, N Channel, 60 V, 1.4 A, 0.25 ohm, SOT-23, Surface Mount DIODES INC. The ZXMN6A07FTA is a N-channel Enhancement Mode MOSFET with matte tin-plated terminals and UL94V-0 flame-rated moulded plastic case. This MOSFET utilizes an unique structure combining the benefits of low on-state resistance with fast switching speed. • Low...
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N Channel | 60V | 1.4A | 0.25ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS84W-7-F
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SC16773 |
Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-323, Surface Mount DIODES INC. The BSS84W-7-F is a P-channel enhancement-mode FET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain supe...
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P Channel | 50V | 130mA | 10ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS9435A
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SC16915 |
Power MOSFET, P Channel, 30 V, 5.3 A, 0.042 ohm, SOIC, Surface Mount ONSEMI The FDS9435A is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The medium voltage power MOSFET is optimized power switches combining s...
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P Channel | 30V | 5.3A | 0.042ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI4447ADY-T1-GE3
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SC16775 |
Power MOSFET, P Channel, 40 V, 7.2 A, 0.036 ohm, SOIC, Surface Mount VISHAY • 40V, 7.2A, P-channel TrenchFET® power MOSFET in 8 pin SOIC package • 100% Rg tested • 100 % UIS tested • Suitable for load switches, adaptor switch and notebook PCs
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P Channel | 40V | 7.2A | 0.036ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TN0702N3-G
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SC17007 |
N Channel Power MOSFET, 20V, 530mA, 1 Ohm, TO-92 MICROCHIP This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...
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N Channel | 20V | 530mA | 1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC857BLT1G
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SC16057 |
Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 225mW, SOT-23 ONSEMI The BC857BLT1G is a -45V PNP silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications. • Halogen-free/BFR-free • -50V Collector to base voltage (VCBO) • -5V Emitter ...
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STW45NM50
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SC15829 |
Power MOSFET, N Channel, 550V, 45A, 0.1 ohm, TO-247, STMICROELECTRONICS The STW45NM50 is a 550V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent ava...
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N Channel | 550V | 45A | 0.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDS332P
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SC16872 |
Power MOSFET, P Channel, 20 V, 1 A, 0.3 ohm, SuperSOT, Surface Mount ONSEMI The NDS332P is a P-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage application...
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P Channel | 20V | 1A | 0.3ohm |