Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

Diodes Thyristors, DIACS & TRIACS Npn Transistors Pnp Transistors Photo Transistors
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IRFPG50PBF
IRFPG50PBF - Power MOSFET, N Channel, 1 kV, 6 A, 2 ohm, TO-247AC, Through Hole

SC16978

Power MOSFET, N Channel, 1 kV, 6 A, 2 ohm, TO-247AC, Through Hole

VISHAY

The IRFPG50PBF is a 1000V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. It a...

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N Channel 1kV 6A 2ohm
DMG6602SVT
DMG6602SVT - SMD Dual MOSFET, Complementary N and P Channel, 30V, 3.4A, TSOT-26

SC16690

SMD Dual MOSFET, Complementary N and P Channel, 30V, 3.4A, TSOT-26

DIODES INC.

The DMG6602SVT from Diode Inc is a surface mount complementary pair enhancement mode MOSFET in TSOT-26 package. This MOSFET features low input capacitance, fast switching speed and low input/output leakage, designed to minimize the onstate resistance and m...

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Complementary N and P Channel - - -
2N7002K
2N7002K - Power MOSFET, N Channel, 60V, 300mA, 2 Ohm, SOT-23, SMD

SC15990

Power MOSFET, N Channel, 60V, 300mA, 2 Ohm, SOT-23, SMD

ONSEMI

The 2N7002K is a N-channel enhancement mode Field Effect Transistor features low on resistance, low gate threshold voltage, low input capacitance and fast switching speed. • Low input/output leakage • ±20V Gate-source voltage

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N Channel 60V 300mA 2ohm
ULN2004D1013TR
ULN2004D1013TR - Bipolar Transistor Array, Darlington, NPN, 50V, 500mA, 1000hFE, SOIC

SC16139

Bipolar Transistor Array, Darlington, NPN, 50V, 500mA, 1000hFE, SOIC

STMICROELECTRONICS

ULN2004D1013TR is a high-voltage, high-current Darlington array containing seven open collectors Darlington pairs with common emitters. Each channel is rated at 500mA and can withstand peak currents of 600mA. Suppression diodes are included for inductive l...

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BC556BTA
BC556BTA - Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 500mW, TO-92

SC15787

Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 500mW, TO-92

ONSEMI

The BC556BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • High voltage VCEO • Complement to BC546

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BC847BDW1T1G
BC847BDW1T1G - Bipolar Transistor Array, NPN, 45V, 100mA, 380mW, 450 hFE, SOT-363

SC16124

Bipolar Transistor Array, NPN, 45V, 100mA, 380mW, 450 hFE, SOT-363

ONSEMI

The BC847BDW1T1G is a NPN dual Bipolar Transistor Array designed for general purpose amplifier applications. It is designed for low power surface-mount applications. • Halogen-free • -55 to 150°C Junction temperature range

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FDC658AP
FDC658AP - Power MOSFET, P Channel, 30 V, 4 A, 0.044 ohm, SuperSOT, Surface Mount

SC16747

Power MOSFET, P Channel, 30 V, 4 A, 0.044 ohm, SuperSOT, Surface Mount

ONSEMI

The FDC658AP is a logic level single P-channel MOSFET produced using advanced PowerTrench® process. It has been optimized for battery power management, load switch and DC-to-DC conversion applications. • Low gate charge • High performance Trench technology...

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P Channel 30V 4A 0.044ohm
BSH201,215
BSH201,215 - Power MOSFET, P Channel, 60 V, 160 mA, 2.1 ohm, SOT-23, Surface Mount

SC16756

Power MOSFET, P Channel, 60 V, 160 mA, 2.1 ohm, SOT-23, Surface Mount

NEXPERIA

The BSH201,215 is a P-channel enhancement mode Field-Effect Transistor in a plastic package using vertical D-MOS technology. Suitable for high frequency applications due to fast switching characteristics. • Logic-level compatible • Very fast switching • Lo...

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P Channel 60V 160mA 2.1ohm
NTR4003NT1G
NTR4003NT1G - Power MOSFET, N Channel, 30 V, 560 mA, 1.5 ohm, SOT-23, Surface Mount

SC16762

Power MOSFET, N Channel, 30 V, 560 mA, 1.5 ohm, SOT-23, Surface Mount

ONSEMI

The NTR4003NT1G is a N-channel Small-signal MOSFET offers 30V drain source voltage and 0.5A continuous drain current. It is suitable for notebooks used as level shifters, logic switches and low side load switches. • Low gate voltage threshold VGS (th) to f...

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N Channel 30V 560mA 1.5ohm
PMV16XNR
PMV16XNR - Power MOSFET, N Channel, 20 V, 6.8 A, 0.016 ohm, TO-236AB, Surface Mount

SC16871

Power MOSFET, N Channel, 20 V, 6.8 A, 0.016 ohm, TO-236AB, Surface Mount

NEXPERIA

The PMV16XN is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in LED driver, low-side load-switch and switching circuit applications. • Low threshold voltage • Very fast swit...

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N Channel 20V 6.8A 0.016ohm
SUD50P10-43L-E3
SUD50P10-43L-E3 - Power MOSFET, P Channel, 100 V, 38 A, 0.036 ohm, TO-252AA, Surface Mount

SC16863

Power MOSFET, P Channel, 100 V, 38 A, 0.036 ohm, TO-252AA, Surface Mount

VISHAY

The SUD50P10-43L-E3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage

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P Channel 100V 38A 0.036ohm
FDP18N50
FDP18N50 - Power MOSFET, N Channel, 500 V, 18 A, 0.265 ohm, TO-220, Through Hole

SC15742

Power MOSFET, N Channel, 500 V, 18 A, 0.265 ohm, TO-220, Through Hole

ONSEMI

The FDP18N50 is a 500V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode's reverse rec...

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N Channel 500V 18A 0.265ohm
IRF540PBF
IRF540PBF - Power MOSFET, N Channel, 100V, 28A, 0.077 Ohm, TO-220AB

SC15756

Power MOSFET, N Channel, 100V, 28A, 0.077 Ohm, TO-220AB

VISHAY

The IRF540PBF is a 100V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • 175°C Ope...

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N Channel 100V 28A 0.077ohm
MJD122T4G
MJD122T4G - Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 8A, 20W, TO-252 (DPAK), SMD

SC16081

Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 8A, 20W, TO-252 (DPAK), SMD

ONSEMI

The MJD122T4G is a 8A NPN bipolar power Darlington Transistor designed for general purpose amplifier and low speed switching applications. It is the surface-mount replacement for 2N6040 to 2N6045 series, TIP120 to TIP122 series and TIP125 to TIP127 series....

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BCV47,215
BCV47,215 - Bipolar (BJT) Single Transistor, NPN, 60V, 500mA, 250mW, SOT-23, SMD

SC16011

Bipolar (BJT) Single Transistor, NPN, 60V, 500mA, 250mW, SOT-23, SMD

NEXPERIA

The BCV47 is a NPN Darlington Transistor with medium current and low voltage, high DC current gain. Used in preamplifier input stages. • Complement to BCV46

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PMBT3904,215
PMBT3904,215 - Bipolar (BJT) Single Transistor, Switching, NPN, 40V, 200mA, 250mW, TO-236AB, SMD

SC16113

Bipolar (BJT) Single Transistor, Switching, NPN, 40V, 200mA, 250mW, TO-236AB, SMD

NEXPERIA

The PMBT3904,215 is a NPN Switching Transistor housed in a surface-mount plastic package. • PNP complement is PMBT3906 • 1A Marking code

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SI2356DS-T1-GE3
SI2356DS-T1-GE3 - Power MOSFET, N Channel, 40V, 4.3A, 0.042 Ohm, SOT-23, SMD

SC16787

Power MOSFET, N Channel, 40V, 4.3A, 0.042 Ohm, SOT-23, SMD

VISHAY

The SI2356DS-T1-GE3 from Vishay is a 40V SMD Power MOSFET, N Channel transistor in a SOT 23 case. Suitable for DC / DC converter, load switches, LED backlighting and power management applications. • TrenchFET® Power MOSFET • 100% Rg Tested

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N Channel 40V 4.3A 0.042ohm
IRF7240TRPBF
IRF7240TRPBF - Power MOSFET, P Channel, 40 V, 10.5 A, 0.015 ohm, SOIC, Surface Mount

SC16857

Power MOSFET, P Channel, 40 V, 10.5 A, 0.015 ohm, SOIC, Surface Mount

INFINEON

The IRF7240TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve the extremely low ON-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and lo...

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P Channel 40V 10.5A 0.015ohm
FDN5618P
FDN5618P - SMD Power MOSFET P Channel PowerTrench Transistor, SuperSOT, 60V, 1.25A

SC16699

SMD Power MOSFET P Channel PowerTrench Transistor, SuperSOT, 60V, 1.25A

ONSEMI

The FDN5618P is a surface mount, 60V P channel logic level powerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is w...

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P Channel 60V 1.25A 0.17ohm
BSH105,215
BSH105,215 - Power MOSFET, N Channel, 20 V, 1.05 A, 0.14 ohm, SOT-23, Surface Mount

SC16721

Power MOSFET, N Channel, 20 V, 1.05 A, 0.14 ohm, SOT-23, Surface Mount

NEXPERIA

The BSH105,215 is a N-channel enhancement mode Field-Effect Transistor in a plastic package using vertical D-MOS technology. Suitable for high frequency applications due to fast switching characteristics. • Logic-level compatible • Very fast switching • Lo...

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N Channel 20V 1.05A 0.14ohm
FJP13009H2TU
FJP13009H2TU - Bipolar (BJT) Single Transistor, NPN, 400V, 12A, 100W, TO-220

SC15758

Bipolar (BJT) Single Transistor, NPN, 400V, 12A, 100W, TO-220

ONSEMI

The FJP13009H2TU is a high voltage fast-switching NPN epitaxial planar Power Transistor. The FJP13009H2TU is available with multiple hFE bin classes for ease of design use. Designed for high speed switching applications and offers excellent power dissipati...

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STN9260
STN9260 - Bipolar (BJT) Single Transistor, PNP, -600V, -500mA, 1.6W, SOT-223, SMD

SC15930

Bipolar (BJT) Single Transistor, PNP, -600V, -500mA, 1.6W, SOT-223, SMD

STMICROELECTRONICS

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MJD32CG
MJD32CG - Bipolar (BJT) Single Transistor, PNP, 100V, 3A, 15W, TO-252 (DPAK)

SC16114

Bipolar (BJT) Single Transistor, PNP, 100V, 3A, 15W, TO-252 (DPAK)

ONSEMI

The MJD32CG is a 3A PNP bipolar Power Transistor designed for general purpose amplifier and low speed switching applications. • Electrically similar to popular TIP31 and TIP32 series • AEC-Q101 qualified and PPAP capable

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ULN2003AN...
ULN2003AN... - Bipolar Transistor Array, NPN, 50V, 500mA, 25W, 600hFE, DIP

SC16132

Bipolar Transistor Array, NPN, 50V, 500mA, 25W, 600hFE, DIP

TEXAS INSTRUMENTS

High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...

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BC817,215
BC817,215 - Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 250mW, SOT-23, SMD

SC16010

Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 250mW, SOT-23, SMD

NEXPERIA

The BC817,215 is a NPN Transistor for general purpose switching and amplification. • High Current • Low Voltage

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