Transistors
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Transistors
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Diodes | Thyristors, DIACS & TRIACS | Npn Transistors | Pnp Transistors | Photo Transistors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFPG50PBF
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SC16978 |
Power MOSFET, N Channel, 1 kV, 6 A, 2 ohm, TO-247AC, Through Hole VISHAY The IRFPG50PBF is a 1000V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. It a...
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N Channel | 1kV | 6A | 2ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMG6602SVT
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SC16690 |
SMD Dual MOSFET, Complementary N and P Channel, 30V, 3.4A, TSOT-26 DIODES INC. The DMG6602SVT from Diode Inc is a surface mount complementary pair enhancement mode MOSFET in TSOT-26 package. This MOSFET features low input capacitance, fast switching speed and low input/output leakage, designed to minimize the onstate resistance and m...
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Complementary N and P Channel | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N7002K
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SC15990 |
Power MOSFET, N Channel, 60V, 300mA, 2 Ohm, SOT-23, SMD ONSEMI The 2N7002K is a N-channel enhancement mode Field Effect Transistor features low on resistance, low gate threshold voltage, low input capacitance and fast switching speed. • Low input/output leakage • ±20V Gate-source voltage
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N Channel | 60V | 300mA | 2ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ULN2004D1013TR
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SC16139 |
Bipolar Transistor Array, Darlington, NPN, 50V, 500mA, 1000hFE, SOIC STMICROELECTRONICS ULN2004D1013TR is a high-voltage, high-current Darlington array containing seven open collectors Darlington pairs with common emitters. Each channel is rated at 500mA and can withstand peak currents of 600mA. Suppression diodes are included for inductive l...
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BC556BTA
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SC15787 |
Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 500mW, TO-92 ONSEMI The BC556BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • High voltage VCEO • Complement to BC546
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BC847BDW1T1G
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SC16124 |
Bipolar Transistor Array, NPN, 45V, 100mA, 380mW, 450 hFE, SOT-363 ONSEMI The BC847BDW1T1G is a NPN dual Bipolar Transistor Array designed for general purpose amplifier applications. It is designed for low power surface-mount applications. • Halogen-free • -55 to 150°C Junction temperature range
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FDC658AP
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SC16747 |
Power MOSFET, P Channel, 30 V, 4 A, 0.044 ohm, SuperSOT, Surface Mount ONSEMI The FDC658AP is a logic level single P-channel MOSFET produced using advanced PowerTrench® process. It has been optimized for battery power management, load switch and DC-to-DC conversion applications. • Low gate charge • High performance Trench technology...
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P Channel | 30V | 4A | 0.044ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSH201,215
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SC16756 |
Power MOSFET, P Channel, 60 V, 160 mA, 2.1 ohm, SOT-23, Surface Mount NEXPERIA The BSH201,215 is a P-channel enhancement mode Field-Effect Transistor in a plastic package using vertical D-MOS technology. Suitable for high frequency applications due to fast switching characteristics. • Logic-level compatible • Very fast switching • Lo...
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P Channel | 60V | 160mA | 2.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTR4003NT1G
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SC16762 |
Power MOSFET, N Channel, 30 V, 560 mA, 1.5 ohm, SOT-23, Surface Mount ONSEMI The NTR4003NT1G is a N-channel Small-signal MOSFET offers 30V drain source voltage and 0.5A continuous drain current. It is suitable for notebooks used as level shifters, logic switches and low side load switches. • Low gate voltage threshold VGS (th) to f...
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N Channel | 30V | 560mA | 1.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMV16XNR
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SC16871 |
Power MOSFET, N Channel, 20 V, 6.8 A, 0.016 ohm, TO-236AB, Surface Mount NEXPERIA The PMV16XN is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in LED driver, low-side load-switch and switching circuit applications. • Low threshold voltage • Very fast swit...
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N Channel | 20V | 6.8A | 0.016ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SUD50P10-43L-E3
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SC16863 |
Power MOSFET, P Channel, 100 V, 38 A, 0.036 ohm, TO-252AA, Surface Mount VISHAY The SUD50P10-43L-E3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage
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P Channel | 100V | 38A | 0.036ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDP18N50
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SC15742 |
Power MOSFET, N Channel, 500 V, 18 A, 0.265 ohm, TO-220, Through Hole ONSEMI The FDP18N50 is a 500V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode's reverse rec...
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N Channel | 500V | 18A | 0.265ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF540PBF
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SC15756 |
Power MOSFET, N Channel, 100V, 28A, 0.077 Ohm, TO-220AB VISHAY The IRF540PBF is a 100V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • 175°C Ope...
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N Channel | 100V | 28A | 0.077ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJD122T4G
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SC16081 |
Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 8A, 20W, TO-252 (DPAK), SMD ONSEMI The MJD122T4G is a 8A NPN bipolar power Darlington Transistor designed for general purpose amplifier and low speed switching applications. It is the surface-mount replacement for 2N6040 to 2N6045 series, TIP120 to TIP122 series and TIP125 to TIP127 series....
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BCV47,215
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SC16011 |
Bipolar (BJT) Single Transistor, NPN, 60V, 500mA, 250mW, SOT-23, SMD NEXPERIA The BCV47 is a NPN Darlington Transistor with medium current and low voltage, high DC current gain. Used in preamplifier input stages. • Complement to BCV46
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PMBT3904,215
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SC16113 |
Bipolar (BJT) Single Transistor, Switching, NPN, 40V, 200mA, 250mW, TO-236AB, SMD NEXPERIA The PMBT3904,215 is a NPN Switching Transistor housed in a surface-mount plastic package. • PNP complement is PMBT3906 • 1A Marking code
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SI2356DS-T1-GE3
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SC16787 |
Power MOSFET, N Channel, 40V, 4.3A, 0.042 Ohm, SOT-23, SMD VISHAY The SI2356DS-T1-GE3 from Vishay is a 40V SMD Power MOSFET, N Channel transistor in a SOT 23 case. Suitable for DC / DC converter, load switches, LED backlighting and power management applications. • TrenchFET® Power MOSFET • 100% Rg Tested
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N Channel | 40V | 4.3A | 0.042ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7240TRPBF
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SC16857 |
Power MOSFET, P Channel, 40 V, 10.5 A, 0.015 ohm, SOIC, Surface Mount INFINEON The IRF7240TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve the extremely low ON-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and lo...
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P Channel | 40V | 10.5A | 0.015ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN5618P
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SC16699 |
SMD Power MOSFET P Channel PowerTrench Transistor, SuperSOT, 60V, 1.25A ONSEMI The FDN5618P is a surface mount, 60V P channel logic level powerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is w...
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P Channel | 60V | 1.25A | 0.17ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSH105,215
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SC16721 |
Power MOSFET, N Channel, 20 V, 1.05 A, 0.14 ohm, SOT-23, Surface Mount NEXPERIA The BSH105,215 is a N-channel enhancement mode Field-Effect Transistor in a plastic package using vertical D-MOS technology. Suitable for high frequency applications due to fast switching characteristics. • Logic-level compatible • Very fast switching • Lo...
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N Channel | 20V | 1.05A | 0.14ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FJP13009H2TU
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SC15758 |
Bipolar (BJT) Single Transistor, NPN, 400V, 12A, 100W, TO-220 ONSEMI The FJP13009H2TU is a high voltage fast-switching NPN epitaxial planar Power Transistor. The FJP13009H2TU is available with multiple hFE bin classes for ease of design use. Designed for high speed switching applications and offers excellent power dissipati...
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STN9260
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SC15930 |
Bipolar (BJT) Single Transistor, PNP, -600V, -500mA, 1.6W, SOT-223, SMD STMICROELECTRONICS
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MJD32CG
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SC16114 |
Bipolar (BJT) Single Transistor, PNP, 100V, 3A, 15W, TO-252 (DPAK) ONSEMI The MJD32CG is a 3A PNP bipolar Power Transistor designed for general purpose amplifier and low speed switching applications. • Electrically similar to popular TIP31 and TIP32 series • AEC-Q101 qualified and PPAP capable
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ULN2003AN...
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SC16132 |
Bipolar Transistor Array, NPN, 50V, 500mA, 25W, 600hFE, DIP TEXAS INSTRUMENTS High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...
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BC817,215
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SC16010 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 250mW, SOT-23, SMD NEXPERIA The BC817,215 is a NPN Transistor for general purpose switching and amplification. • High Current • Low Voltage
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