Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

Diodes Thyristors, DIACS & TRIACS Npn Transistors Pnp Transistors Photo Transistors
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BC858B
BC858B - Bipolar (BJT) Single Transistor, PNP, -30V, -100mA, 250mW, SOT-23, SMD

SC16111

Bipolar (BJT) Single Transistor, PNP, -30V, -100mA, 250mW, SOT-23, SMD

MULTICOMP PRO

The BC858B is a PNP general purpose Bipolar Transistor suitable for switching and amplification applications. • -65 to 150°C Junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditio...

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FDMQ8205A
FDMQ8205A - Dual MOSFET, Complementary N and P Channel, MLP, SMD

SC16810

Dual MOSFET, Complementary N and P Channel, MLP, SMD

ONSEMI

• Channel Type : Complementary N and P Channel

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Complementary N and P Channel - - -
IRFP140NPBF
IRFP140NPBF - Power MOSFET, HEXFET, N Channel, 100 V, 33 A, 0.052 ohm, TO-247AC, Through Hole

SC16983

Power MOSFET, HEXFET, N Channel, 100 V, 33 A, 0.052 ohm, TO-247AC, Through Hole

INFINEON

The IRFP140NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated

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N Channel 100V 33A 0.052ohm
LP0701N3-G
LP0701N3-G - P Channel Power MOSFET, 16.5V, 500mA, 1.3 Ohm, TO-92

SC16975

P Channel Power MOSFET, 16.5V, 500mA, 1.3 Ohm, TO-92

MICROCHIP

This enhancement-mode (normally-off) transistor utilises a lateral MOS structure and Supertex’s well-proven silicongate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistor and with the high i...

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P Channel 16.5V 500mA 1.3ohm
IRLR024NTRPBF
IRLR024NTRPBF - Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-252AA, Surface Mount

SC17020

Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-252AA, Surface Mount

INFINEON

The IRLR024NTRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device d...

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N Channel 55V 17A 0.065ohm
IRFR5305TRPBF
IRFR5305TRPBF - Power MOSFET, P Channel, 55 V, 31 A, 0.065 ohm, TO-252AA, Surface Mount

SC17018

Power MOSFET, P Channel, 55 V, 31 A, 0.065 ohm, TO-252AA, Surface Mount

INFINEON

The IRFR5305TRPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized ...

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P Channel 55V 31A 0.065ohm
BUK98150-55A/CUF
BUK98150-55A/CUF - SMD N Channel Power MOSFET, 55V, 5.5A, 0.116 Ohm, SC-73

SC16879

SMD N Channel Power MOSFET, 55V, 5.5A, 0.116 Ohm, SC-73

NEXPERIA

The BUK98150-55A/CUF from NEXPERIA is a Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. • Suitable for 12V & 24V loads, automotive & general purpose power switching and motors, lamps & s...

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N Channel 55V 5.5A 0.116ohm
BC846S,115
BC846S,115 - Bipolar Transistor Array, NPN, 65V, 100mA, 200mW, 110hFE, SOT-363

SC16128

Bipolar Transistor Array, NPN, 65V, 100mA, 200mW, 110hFE, SOT-363

NEXPERIA

The BC846S is a dual NPN General Purpose Transistor in a plastic package. It is suitable for use with general purpose switching and small signal amplification. • Reduces number of components and board space • No mutual interference between the transistors ...

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2N2219A
2N2219A - Bipolar (BJT) Single Transistor, NPN, 40V, 300MHz, 400mW, 800mA, 35 hFE

SC15752

Bipolar (BJT) Single Transistor, NPN, 40V, 300MHz, 400mW, 800mA, 35 hFE

MULTICOMP PRO

2N2219A is a NPN silicon transistor for high speed switching applications. • 75V collector-base voltage • 6V emitter-base voltage • 1.2W total device dissipation • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms ...

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MMBT5401LT1G
MMBT5401LT1G - Bipolar (BJT) Single Transistor, PNP, -150V, -500mA, 225mW, SOT-23

SC16070

Bipolar (BJT) Single Transistor, PNP, -150V, -500mA, 225mW, SOT-23

ONSEMI

The MMBT5401LT1G is a PNP high voltage Bipolar Transistor designed for general purpose switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Halogen-free • AEC-Q101 qualified and PPAP ca...

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SPW47N60C3FKSA1
SPW47N60C3FKSA1 - Power MOSFET, N Channel, 650V, 47A, 0.07 ohm, TO-247,

SC15826

Power MOSFET, N Channel, 650V, 47A, 0.07 ohm, TO-247,

INFINEON

The SPW47N60C3 is a 650V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...

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N Channel 650V 47A 0.07ohm
STP75NF75
STP75NF75 - Power MOSFET, N Channel, 75 V, 80 A, 0.0095 ohm, TO-220, Through Hole

SC16908

Power MOSFET, N Channel, 75 V, 80 A, 0.0095 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP75NF75 is a 75V N-channel STripFET™ II Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolat...

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N Channel 75V 80A 0.0095ohm
FDT86102LZ
FDT86102LZ - Power MOSFET, N Channel, 100 V, 6.6 A, 0.022 ohm, SOT-223, Surface Mount

SC17016

Power MOSFET, N Channel, 100 V, 6.6 A, 0.022 ohm, SOT-223, Surface Mount

ONSEMI

This N Channel MOSFET is produced using Fairchild Semiconductors advance PowerTrench® process that has been especially tailored to minimise the on state resistance and switch loss. G-S Zener has been added to enhance ESD voltage levels. • Suitable for DC/D...

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N Channel 100V 6.6A 0.022ohm
SS8550DBU
SS8550DBU - Bipolar (BJT) Single Transistor, PNP, -25V, -1.5A, 1W, TO-226AA

SC15798

Bipolar (BJT) Single Transistor, PNP, -25V, -1.5A, 1W, TO-226AA

ONSEMI

The SS8550DBU is a PNP Epitaxial Silicon Transistor designed for use in 2W output amplifier of portable radios in Class B push-pull operation. • Complimentary to SS8050

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2N7002P,215
2N7002P,215 - Power MOSFET, N Channel, 60V, 360mA, 1 Ohm, TO-236AB, SMD

SC15989

Power MOSFET, N Channel, 60V, 360mA, 1 Ohm, TO-236AB, SMD

NEXPERIA

The 2N7002P,215 is a N-channel enhancement-mode MOSFET designed in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuits. • Logic-le...

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N Channel 60V 360mA 1ohm
2N2647
2N2647 - Unijunction Transistor, 2A, 1µA, 10mA, TO-18

SC15370

Unijunction Transistor, 2A, 1µA, 10mA, TO-18

MULTICOMP PRO

The 2N2647 is a Silicon PN Unijunction Transistor designed for use in pulse and timing circuits, sensing circuits as well thyristor trigger circuits. • Low peak point current • Low emitter reverse current • Passivated surface for reliability and uniformity...

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BC807-40LVL
BC807-40LVL - Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, TO-236AB, SMD

SC15934

Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, TO-236AB, SMD

NEXPERIA

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BC856BDW1T1G
BC856BDW1T1G - Bipolar Transistor Array, Dual PNP, -65V, -100mA, 380mW, 220hFE, SOT-363

SC16138

Bipolar Transistor Array, Dual PNP, -65V, -100mA, 380mW, 220hFE, SOT-363

ONSEMI

The BC856BDW1T1G is a PNP dual Bipolar Transistor Array designed for general purpose amplifier applications. It is designed for low power surface-mount applications. • Halogen-free • -55 to 150°C Junction temperature range

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MMBT3906,215
MMBT3906,215 - Bipolar (BJT) Single Transistor, Switching, PNP, -40V, -200mA, 250mW, TO-236AB, SMD

SC16097

Bipolar (BJT) Single Transistor, Switching, PNP, -40V, -200mA, 250mW, TO-236AB, SMD

NEXPERIA

The MMBT3906,215 is a PNP Switching Transistor housed in a plastic package. It is suitable for use with the switching and linear amplification. • NPN complement is MMBT3904 • 7B Marking code

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BC846BPN,115
BC846BPN,115 - Bipolar Transistor Array, NPN, PNP, 65V, 100mA, 200mW, 200 hFE, SOT-363

SC16122

Bipolar Transistor Array, NPN, PNP, 65V, 100mA, 200mW, 200 hFE, SOT-363

NEXPERIA

The BC846BPN is a 100mA NPN-PNP General Purpose Transistor Pair in a very small surface-mount plastic package. It is suitable for use with general purpose switching and amplification. • Low collector capacitance • Low collector-emitter saturation voltage •...

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LND150N3-G
LND150N3-G - Power MOSFET, N Channel, 500 V, 30 mA, 850 ohm, TO-92, Through Hole

SC16955

Power MOSFET, N Channel, 500 V, 30 mA, 850 ohm, TO-92, Through Hole

MICROCHIP

The LND150N3-G is a 500V High Voltage N-channel Depletion Mode (normally-on) Transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant...

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N Channel 500V 30mA 850ohm
SQM40031EL_GE3
SQM40031EL_GE3 - SMD P Channel Power MOSFET 40V, 120A, 0.0025 Ohm, TO-263 (D2PAK)

SC16939

SMD P Channel Power MOSFET 40V, 120A, 0.0025 Ohm, TO-263 (D2PAK)

VISHAY

• TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested • AEC-Q101 qualified

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P Channel 40V 120A 0.0025ohm
IRLML6346TRPBF
IRLML6346TRPBF - Power MOSFET, N Channel, 30 V, 3.4 A, 0.046 ohm, SOT-23, Surface Mount

SC16737

Power MOSFET, N Channel, 30 V, 3.4 A, 0.046 ohm, SOT-23, Surface Mount

INFINEON

The IRLML6346TRPBF is a HEXFET® single N-channel Power MOSFET for use with battery protection, DC switches, high side and low side load switch. It is compatible with existing surface-mount techniques. • Halogen-free • Consumer qualification MSL-1 (increase...

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N Channel 30V 3.4A 0.046ohm
FMMT591
FMMT591 - Bipolar (BJT) Single Transistor, PNP, 60V, -1A, 500mW, SOT-23, SMD

SC16027

Bipolar (BJT) Single Transistor, PNP, 60V, -1A, 500mW, SOT-23, SMD

DIODES INC.

The FMMT591 is a PNP silicon planar medium power Bipolar Transistor offers 355mΩ low equivalent on resistance RCE (sat) at 1A. • FMMT491 Complementary NPN type • -55 to 150°C Operating temperature range

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BD139-10
BD139-10 - Bipolar Transistor, NPN, 80V, 1.5A, TO-126

SC15373

Bipolar Transistor, NPN, 80V, 1.5A, TO-126

MULTICOMP PRO

The BD139-10 is a NPN Transistor with 80V collector-emitter voltage and 12.5W power dissipation. • Collector-base voltage(Vcbo = 100V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view...

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