Transistors
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Transistors
Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.
Diodes | Thyristors, DIACS & TRIACS | Npn Transistors | Pnp Transistors | Photo Transistors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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BC858B
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SC16111 |
Bipolar (BJT) Single Transistor, PNP, -30V, -100mA, 250mW, SOT-23, SMD MULTICOMP PRO The BC858B is a PNP general purpose Bipolar Transistor suitable for switching and amplification applications. • -65 to 150°C Junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditio...
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FDMQ8205A
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SC16810 |
Dual MOSFET, Complementary N and P Channel, MLP, SMD ONSEMI • Channel Type : Complementary N and P Channel
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Complementary N and P Channel | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP140NPBF
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SC16983 |
Power MOSFET, HEXFET, N Channel, 100 V, 33 A, 0.052 ohm, TO-247AC, Through Hole INFINEON The IRFP140NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated
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N Channel | 100V | 33A | 0.052ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
LP0701N3-G
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SC16975 |
P Channel Power MOSFET, 16.5V, 500mA, 1.3 Ohm, TO-92 MICROCHIP This enhancement-mode (normally-off) transistor utilises a lateral MOS structure and Supertex’s well-proven silicongate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistor and with the high i...
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P Channel | 16.5V | 500mA | 1.3ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLR024NTRPBF
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SC17020 |
Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-252AA, Surface Mount INFINEON The IRLR024NTRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device d...
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N Channel | 55V | 17A | 0.065ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFR5305TRPBF
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SC17018 |
Power MOSFET, P Channel, 55 V, 31 A, 0.065 ohm, TO-252AA, Surface Mount INFINEON The IRFR5305TRPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized ...
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P Channel | 55V | 31A | 0.065ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BUK98150-55A/CUF
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SC16879 |
SMD N Channel Power MOSFET, 55V, 5.5A, 0.116 Ohm, SC-73 NEXPERIA The BUK98150-55A/CUF from NEXPERIA is a Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. • Suitable for 12V & 24V loads, automotive & general purpose power switching and motors, lamps & s...
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N Channel | 55V | 5.5A | 0.116ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846S,115
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SC16128 |
Bipolar Transistor Array, NPN, 65V, 100mA, 200mW, 110hFE, SOT-363 NEXPERIA The BC846S is a dual NPN General Purpose Transistor in a plastic package. It is suitable for use with general purpose switching and small signal amplification. • Reduces number of components and board space • No mutual interference between the transistors ...
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2N2219A
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SC15752 |
Bipolar (BJT) Single Transistor, NPN, 40V, 300MHz, 400mW, 800mA, 35 hFE MULTICOMP PRO 2N2219A is a NPN silicon transistor for high speed switching applications. • 75V collector-base voltage • 6V emitter-base voltage • 1.2W total device dissipation • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms ...
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MMBT5401LT1G
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SC16070 |
Bipolar (BJT) Single Transistor, PNP, -150V, -500mA, 225mW, SOT-23 ONSEMI The MMBT5401LT1G is a PNP high voltage Bipolar Transistor designed for general purpose switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Halogen-free • AEC-Q101 qualified and PPAP ca...
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SPW47N60C3FKSA1
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SC15826 |
Power MOSFET, N Channel, 650V, 47A, 0.07 ohm, TO-247, INFINEON The SPW47N60C3 is a 650V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...
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N Channel | 650V | 47A | 0.07ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP75NF75
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SC16908 |
Power MOSFET, N Channel, 75 V, 80 A, 0.0095 ohm, TO-220, Through Hole STMICROELECTRONICS The STP75NF75 is a 75V N-channel STripFET™ II Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolat...
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N Channel | 75V | 80A | 0.0095ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDT86102LZ
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SC17016 |
Power MOSFET, N Channel, 100 V, 6.6 A, 0.022 ohm, SOT-223, Surface Mount ONSEMI This N Channel MOSFET is produced using Fairchild Semiconductors advance PowerTrench® process that has been especially tailored to minimise the on state resistance and switch loss. G-S Zener has been added to enhance ESD voltage levels. • Suitable for DC/D...
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N Channel | 100V | 6.6A | 0.022ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SS8550DBU
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SC15798 |
Bipolar (BJT) Single Transistor, PNP, -25V, -1.5A, 1W, TO-226AA ONSEMI The SS8550DBU is a PNP Epitaxial Silicon Transistor designed for use in 2W output amplifier of portable radios in Class B push-pull operation. • Complimentary to SS8050
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2N7002P,215
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SC15989 |
Power MOSFET, N Channel, 60V, 360mA, 1 Ohm, TO-236AB, SMD NEXPERIA The 2N7002P,215 is a N-channel enhancement-mode MOSFET designed in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuits. • Logic-le...
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N Channel | 60V | 360mA | 1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N2647
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SC15370 |
Unijunction Transistor, 2A, 1µA, 10mA, TO-18 MULTICOMP PRO The 2N2647 is a Silicon PN Unijunction Transistor designed for use in pulse and timing circuits, sensing circuits as well thyristor trigger circuits. • Low peak point current • Low emitter reverse current • Passivated surface for reliability and uniformity...
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BC807-40LVL
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SC15934 |
Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, TO-236AB, SMD NEXPERIA
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BC856BDW1T1G
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SC16138 |
Bipolar Transistor Array, Dual PNP, -65V, -100mA, 380mW, 220hFE, SOT-363 ONSEMI The BC856BDW1T1G is a PNP dual Bipolar Transistor Array designed for general purpose amplifier applications. It is designed for low power surface-mount applications. • Halogen-free • -55 to 150°C Junction temperature range
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MMBT3906,215
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SC16097 |
Bipolar (BJT) Single Transistor, Switching, PNP, -40V, -200mA, 250mW, TO-236AB, SMD NEXPERIA The MMBT3906,215 is a PNP Switching Transistor housed in a plastic package. It is suitable for use with the switching and linear amplification. • NPN complement is MMBT3904 • 7B Marking code
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BC846BPN,115
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SC16122 |
Bipolar Transistor Array, NPN, PNP, 65V, 100mA, 200mW, 200 hFE, SOT-363 NEXPERIA The BC846BPN is a 100mA NPN-PNP General Purpose Transistor Pair in a very small surface-mount plastic package. It is suitable for use with general purpose switching and amplification. • Low collector capacitance • Low collector-emitter saturation voltage •...
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LND150N3-G
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SC16955 |
Power MOSFET, N Channel, 500 V, 30 mA, 850 ohm, TO-92, Through Hole MICROCHIP The LND150N3-G is a 500V High Voltage N-channel Depletion Mode (normally-on) Transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant...
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N Channel | 500V | 30mA | 850ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQM40031EL_GE3
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SC16939 |
SMD P Channel Power MOSFET 40V, 120A, 0.0025 Ohm, TO-263 (D2PAK) VISHAY • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested • AEC-Q101 qualified
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P Channel | 40V | 120A | 0.0025ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML6346TRPBF
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SC16737 |
Power MOSFET, N Channel, 30 V, 3.4 A, 0.046 ohm, SOT-23, Surface Mount INFINEON The IRLML6346TRPBF is a HEXFET® single N-channel Power MOSFET for use with battery protection, DC switches, high side and low side load switch. It is compatible with existing surface-mount techniques. • Halogen-free • Consumer qualification MSL-1 (increase...
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N Channel | 30V | 3.4A | 0.046ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT591
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SC16027 |
Bipolar (BJT) Single Transistor, PNP, 60V, -1A, 500mW, SOT-23, SMD DIODES INC. The FMMT591 is a PNP silicon planar medium power Bipolar Transistor offers 355mΩ low equivalent on resistance RCE (sat) at 1A. • FMMT491 Complementary NPN type • -55 to 150°C Operating temperature range
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BD139-10
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SC15373 |
Bipolar Transistor, NPN, 80V, 1.5A, TO-126 MULTICOMP PRO The BD139-10 is a NPN Transistor with 80V collector-emitter voltage and 12.5W power dissipation. • Collector-base voltage(Vcbo = 100V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view...
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