Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

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NTF2955T1G
NTF2955T1G - SMD P Channel Power MOSFET,  60V, 2.6A, 0.17 Ohm, SOT-223

SC16880

SMD P Channel Power MOSFET, 60V, 2.6A, 0.17 Ohm, SOT-223

ONSEMI

NTF2955T1G is a single, P-channel power MOSFET. The applications include power supplies, PWM motor control, converters, and power management. • Drain-to-source on resistance is 145mohm typ (VGS = -10V, ID = -0.75A) • Gate-to-source voltage is ±20V (TJ = 25...

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P Channel 60V 2.6A 0.17ohm
IRLML5103TRPBF
IRLML5103TRPBF - Power MOSFET, P Channel, 30 V, 600 mA, 0.6 ohm, µSOIC, Surface Mount

SC16784

Power MOSFET, P Channel, 30 V, 600 mA, 0.6 ohm, µSOIC, Surface Mount

INFINEON

The IRLML5103TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an ext...

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P Channel 30V 600mA 0.6ohm
BFR106E6327HTSA1
BFR106E6327HTSA1 - Bipolar RF Transistor, NPN, 16V, 5GHz, 700mW, 210mA, SOT-23

SC15949

Bipolar RF Transistor, NPN, 16V, 5GHz, 700mW, 210mA, SOT-23

INFINEON

• Low noise silicon bipolar RF transistor • High linearity low noise RF transistor • 22dBm OP1dB and 31dBm OIP3 at 900MHz, 8V, 70mA • For UHF/VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector des...

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STP4N150
STP4N150 - Power MOSFET, N Channel, 1.5kV, 4A, 5 ohm, TO-220

SC15827

Power MOSFET, N Channel, 1.5kV, 4A, 5 ohm, TO-220

STMICROELECTRONICS

• 1500V, 4A N-channel PowerMESH™ power MOSFET in 3 pin TO-220 package • 100% avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Strengthened layout with edge termination • Lowest RDS(on) per area, unrivalled gate charge, s...

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N Channel 1.5kV 4A 5ohm
IRF1010EPBF
IRF1010EPBF - Power MOSFET, N Channel, 60V, 81A, 0.012 Ohm, TO-220AB

SC17255

Power MOSFET, N Channel, 60V, 81A, 0.012 Ohm, TO-220AB

INFINEON

The IRF1010EPBF is a 60V single N-channel HEXFET Power MOSFET with advanced process technology. Advanced HEXFET® power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the f...

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N Channel 60V 81A 0.012ohm
VN10LF
VN10LF - SMD N Channel Power MOSFET, 60V, 150mA, 5 Ohm, SOT 23

SC16910

SMD N Channel Power MOSFET, 60V, 150mA, 5 Ohm, SOT 23

DIODES INC.

VN10LF is a N-channel enhancement mode vertical DMOS FET. • Drain-source voltage is 60V • Continuous drain current at Tamb=25°C is 150mA • Pulsed drain current is 3A • Gate source voltage is ±20V • Power dissipation at Tamb=25°C is 330mW • Static drain sou...

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N Channel 60V 150mA 5ohm
FDN340P
FDN340P - Power MOSFET, P Channel, 20 V, 2 A, 0.06 ohm, SOT-23, Surface Mount

SC16814

Power MOSFET, P Channel, 20 V, 2 A, 0.06 ohm, SOT-23, Surface Mount

ONSEMI

The FDN340P is -20V single P channel 2.5V specified powerTrench MOSFET in SOT-23 package. This MOSFET is produced using PowerTrench process to minimize on state resistance and yet maintain low gate charge for superior switching performance. Applicable at p...

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P Channel 20V 2A 0.06ohm
IRF740PBF
IRF740PBF - Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole

SC16909

Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole

VISHAY

The IRF740PBF is a 400V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • 175°C Ope...

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N Channel 400V 10A 0.55ohm
BC546BTF
BC546BTF - Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 500mW, TO-92

SC15782

Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 500mW, TO-92

ONSEMI

The BC546BTF is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • High voltage VCEO • Complement to BC556

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STW15NK90Z
STW15NK90Z - Power MOSFET, N Channel, 900 V, 9.5 A, 0.4 ohm, TO-247, Through Hole

SC16941

Power MOSFET, N Channel, 900 V, 9.5 A, 0.4 ohm, TO-247, Through Hole

STMICROELECTRONICS

The STW15NK90Z is a 900V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is...

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N Channel 900V 9.5A 0.4ohm
BC847BPN,115
BC847BPN,115 - Bipolar Transistor Array, NPN, PNP, 45V, 100mA, 200mW, 200hFE, SC-88

SC16127

Bipolar Transistor Array, NPN, PNP, 45V, 100mA, 200mW, 200hFE, SC-88

NEXPERIA

The BC847BPN from NXP is a surface mount NPN/PNP general purpose transistor in SOT-363 (SC-88) package. This transistor is characterized with low collector capacitance, low collector to emitter saturation voltage and closely matched current gain. It reduce...

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BFR92PE6327HTSA1
BFR92PE6327HTSA1 - Bipolar - RF Transistor, NPN, 15V, 5GHz, 280mW, 45mA, SOT-23

SC16006

Bipolar - RF Transistor, NPN, 15V, 5GHz, 280mW, 45mA, SOT-23

INFINEON

The BFR 92P E6327 is a NPN Silicon RF Transistor for broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 to 20mA. • Complementary type - BFT91 (PNP)

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BSS138BKS,115
BSS138BKS,115 - Dual MOSFET, Trench, N Channel, 60V, 320mA, 1 ohm, SOT-363, Surface Mount

SC16799

Dual MOSFET, Trench, N Channel, 60V, 320mA, 1 ohm, SOT-363, Surface Mount

NEXPERIA

The BSS138BKS is a dual N-channel enhancement-mode FET in a surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications. • Logic-level compat...

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N Channel - - -
BC846ALT1G
BC846ALT1G - Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 300mW, SOT-23, SMD

SC16099

Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 300mW, SOT-23, SMD

ONSEMI

The BC846ALT1G is a NPN Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Halogen-free • AEC-Q101 qualified and PPAP capable • Moist...

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DN2540N3-G
DN2540N3-G - Power MOSFET, N Channel, 400 V, 120 mA, 17 ohm, TO-92, Through Hole

SC16921

Power MOSFET, N Channel, 400 V, 120 mA, 17 ohm, TO-92, Through Hole

MICROCHIP

The DN2540N3-G is a N-channel depletion-mode vertical DMOS FET utilizing an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar t...

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N Channel 400V 120mA 17ohm
BSH205G2R
BSH205G2R - Power MOSFET, P Channel, 20 V, 2 A, 0.12 ohm, TO-236AB, Surface Mount

SC16811

Power MOSFET, P Channel, 20 V, 2 A, 0.12 ohm, TO-236AB, Surface Mount

NEXPERIA

The BSH205G2 is a P-channel MOSFET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, high-side load switch and switching circuit applications. • Low threshold voltage • Low ON-...

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P Channel 20V 2A 0.12ohm
IRF5210PBF
IRF5210PBF - Power MOSFET, P Channel, 100V, 40A, 0.06 ohm, TO-220AB

SC15831

Power MOSFET, P Channel, 100V, 40A, 0.06 ohm, TO-220AB

INFINEON

The IRF5210PBF is a P-channel HEXFET® Power MOSFET. This HEXFET® power MOSFET utilizes advance processing techniques to achieve extremely low 0n-resistance per silicon area. • Advanced Process Technology • New Ultra Low On-Resistance • Fast Switching • Dyn...

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P Channel 100V 40A 0.06ohm
SI2333DDS-T1-GE3
SI2333DDS-T1-GE3 - Power MOSFET, P Channel, 12 V, 6 A, 0.023 ohm, SOT-23, Surface Mount

SC16861

Power MOSFET, P Channel, 12 V, 6 A, 0.023 ohm, SOT-23, Surface Mount

VISHAY

The SI2333DDS-T1-GE3 is a 12VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and battery switch applications. • 100% Rg tested • -55 to 150°C Operating temperature range • Halogen-free

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P Channel 12V 6A 0.023ohm
NTR2101PT1G
NTR2101PT1G - Power MOSFET, P Channel, 8 V, 3.7 A, 0.052 ohm, SOT-23, Surface Mount

SC16911

Power MOSFET, P Channel, 8 V, 3.7 A, 0.052 ohm, SOT-23, Surface Mount

ONSEMI

The NTR2101PT1G is a P-channel Small-signal MOSFET offers -8V drain source voltage and -3.7A continuous drain current. It is suitable for DC-to-DC converters, high side load switch, cellular phone, notebook, PDAs. • Leading Trench technology for low RDS (O...

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P Channel 8V 3.7A 0.052ohm
MJ15003G
MJ15003G - Bipolar (BJT) Single Transistor, Audio, NPN, 140V, 20A, 250W, TO-3

SC15816

Bipolar (BJT) Single Transistor, Audio, NPN, 140V, 20A, 250W, TO-3

ONSEMI

The MJ15003G is a Power Transistor designed for high power audio, disk head positioners and other linear applications. High safe operating area and high DC current gain. Ideal for low distortion complementary designs. • 140VDC Collector-base voltage • 0.70...

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PBSS8110T,215
PBSS8110T,215 - Bipolar (BJT) Single Transistor, NPN, 100V, 1A, 300mW, SOT-23, SMD

SC16078

Bipolar (BJT) Single Transistor, NPN, 100V, 1A, 300mW, SOT-23, SMD

NEXPERIA

The PBSS8110T is a 1A NPN breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package. • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Higher efficiency leading to less heat ge...

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FDA59N30
FDA59N30 - Power MOSFET, N Channel, 300 V, 59 A, 0.047 ohm, TO-3P, Through Hole

SC16993

Power MOSFET, N Channel, 300 V, 59 A, 0.047 ohm, TO-3P, Through Hole

ONSEMI

The FDA59N30 is a 300V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This high voltage MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode'...

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N Channel 300V 59A 0.047ohm
2N6109
2N6109 - Bipolar Transistor, PNP, 50V, 7A, TO-220

SC15381

Bipolar Transistor, PNP, 50V, 7A, TO-220

MULTICOMP PRO

The 2N6109 is a -50V Silicon PNP Complementary Plastic Power Transistor designed for use in general purpose amplifier and switching applications. • DC current gain (hfe = 30 to 150 at Ic = 7A) • Collector-emitter sustaining voltage (Vceo (sus) = 50VDC mini...

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DMG1012T-7
DMG1012T-7 - Power MOSFET, N Channel, 20V, 630mA, 0.3 Ohm, SOT-523, SMD

SC16742

Power MOSFET, N Channel, 20V, 630mA, 0.3 Ohm, SOT-523, SMD

DIODES INC.

DMG1012T-7 is a N-channel enhancement mode MOSFET. • Low on-resistance, low gate threshold voltage • Low input capacitance, fast switching speed • Low input/output leakage, ESD protected up to 2kV • Drain-source voltage is 20V at TA = +25°C • Gate-source v...

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N Channel 20V 630mA 0.4ohm
IRLML2060TRPBF
IRLML2060TRPBF - Power MOSFET, N Channel, 60 V, 1.2 A, 0.356 ohm, SOT-23, Surface Mount

SC16789

Power MOSFET, N Channel, 60 V, 1.2 A, 0.356 ohm, SOT-23, Surface Mount

INFINEON

The IRLML2060TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Environment-friendly • Increased relia...

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N Channel 60V 1.2A 0.356ohm