Transistors
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Transistors
Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.
Diodes | Thyristors, DIACS & TRIACS | Npn Transistors | Pnp Transistors | Photo Transistors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTF2955T1G
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SC16880 |
SMD P Channel Power MOSFET, 60V, 2.6A, 0.17 Ohm, SOT-223 ONSEMI NTF2955T1G is a single, P-channel power MOSFET. The applications include power supplies, PWM motor control, converters, and power management. • Drain-to-source on resistance is 145mohm typ (VGS = -10V, ID = -0.75A) • Gate-to-source voltage is ±20V (TJ = 25...
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P Channel | 60V | 2.6A | 0.17ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLML5103TRPBF
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SC16784 |
Power MOSFET, P Channel, 30 V, 600 mA, 0.6 ohm, µSOIC, Surface Mount INFINEON The IRLML5103TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an ext...
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P Channel | 30V | 600mA | 0.6ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFR106E6327HTSA1
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SC15949 |
Bipolar RF Transistor, NPN, 16V, 5GHz, 700mW, 210mA, SOT-23 INFINEON • Low noise silicon bipolar RF transistor • High linearity low noise RF transistor • 22dBm OP1dB and 31dBm OIP3 at 900MHz, 8V, 70mA • For UHF/VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector des...
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STP4N150
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SC15827 |
Power MOSFET, N Channel, 1.5kV, 4A, 5 ohm, TO-220 STMICROELECTRONICS • 1500V, 4A N-channel PowerMESH™ power MOSFET in 3 pin TO-220 package • 100% avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Strengthened layout with edge termination • Lowest RDS(on) per area, unrivalled gate charge, s...
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N Channel | 1.5kV | 4A | 5ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010EPBF
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SC17255 |
Power MOSFET, N Channel, 60V, 81A, 0.012 Ohm, TO-220AB INFINEON The IRF1010EPBF is a 60V single N-channel HEXFET Power MOSFET with advanced process technology. Advanced HEXFET® power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the f...
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N Channel | 60V | 81A | 0.012ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VN10LF
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SC16910 |
SMD N Channel Power MOSFET, 60V, 150mA, 5 Ohm, SOT 23 DIODES INC. VN10LF is a N-channel enhancement mode vertical DMOS FET. • Drain-source voltage is 60V • Continuous drain current at Tamb=25°C is 150mA • Pulsed drain current is 3A • Gate source voltage is ±20V • Power dissipation at Tamb=25°C is 330mW • Static drain sou...
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N Channel | 60V | 150mA | 5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN340P
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SC16814 |
Power MOSFET, P Channel, 20 V, 2 A, 0.06 ohm, SOT-23, Surface Mount ONSEMI The FDN340P is -20V single P channel 2.5V specified powerTrench MOSFET in SOT-23 package. This MOSFET is produced using PowerTrench process to minimize on state resistance and yet maintain low gate charge for superior switching performance. Applicable at p...
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P Channel | 20V | 2A | 0.06ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF740PBF
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SC16909 |
Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole VISHAY The IRF740PBF is a 400V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • 175°C Ope...
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N Channel | 400V | 10A | 0.55ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC546BTF
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SC15782 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 500mW, TO-92 ONSEMI The BC546BTF is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • High voltage VCEO • Complement to BC556
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STW15NK90Z
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SC16941 |
Power MOSFET, N Channel, 900 V, 9.5 A, 0.4 ohm, TO-247, Through Hole STMICROELECTRONICS The STW15NK90Z is a 900V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is...
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N Channel | 900V | 9.5A | 0.4ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847BPN,115
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SC16127 |
Bipolar Transistor Array, NPN, PNP, 45V, 100mA, 200mW, 200hFE, SC-88 NEXPERIA The BC847BPN from NXP is a surface mount NPN/PNP general purpose transistor in SOT-363 (SC-88) package. This transistor is characterized with low collector capacitance, low collector to emitter saturation voltage and closely matched current gain. It reduce...
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BFR92PE6327HTSA1
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SC16006 |
Bipolar - RF Transistor, NPN, 15V, 5GHz, 280mW, 45mA, SOT-23 INFINEON The BFR 92P E6327 is a NPN Silicon RF Transistor for broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 to 20mA. • Complementary type - BFT91 (PNP)
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BSS138BKS,115
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SC16799 |
Dual MOSFET, Trench, N Channel, 60V, 320mA, 1 ohm, SOT-363, Surface Mount NEXPERIA The BSS138BKS is a dual N-channel enhancement-mode FET in a surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications. • Logic-level compat...
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846ALT1G
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SC16099 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 300mW, SOT-23, SMD ONSEMI The BC846ALT1G is a NPN Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Halogen-free • AEC-Q101 qualified and PPAP capable • Moist...
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DN2540N3-G
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SC16921 |
Power MOSFET, N Channel, 400 V, 120 mA, 17 ohm, TO-92, Through Hole MICROCHIP The DN2540N3-G is a N-channel depletion-mode vertical DMOS FET utilizing an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar t...
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N Channel | 400V | 120mA | 17ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSH205G2R
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SC16811 |
Power MOSFET, P Channel, 20 V, 2 A, 0.12 ohm, TO-236AB, Surface Mount NEXPERIA The BSH205G2 is a P-channel MOSFET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, high-side load switch and switching circuit applications. • Low threshold voltage • Low ON-...
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P Channel | 20V | 2A | 0.12ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF5210PBF
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SC15831 |
Power MOSFET, P Channel, 100V, 40A, 0.06 ohm, TO-220AB INFINEON The IRF5210PBF is a P-channel HEXFET® Power MOSFET. This HEXFET® power MOSFET utilizes advance processing techniques to achieve extremely low 0n-resistance per silicon area. • Advanced Process Technology • New Ultra Low On-Resistance • Fast Switching • Dyn...
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P Channel | 100V | 40A | 0.06ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2333DDS-T1-GE3
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SC16861 |
Power MOSFET, P Channel, 12 V, 6 A, 0.023 ohm, SOT-23, Surface Mount VISHAY The SI2333DDS-T1-GE3 is a 12VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and battery switch applications. • 100% Rg tested • -55 to 150°C Operating temperature range • Halogen-free
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P Channel | 12V | 6A | 0.023ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTR2101PT1G
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SC16911 |
Power MOSFET, P Channel, 8 V, 3.7 A, 0.052 ohm, SOT-23, Surface Mount ONSEMI The NTR2101PT1G is a P-channel Small-signal MOSFET offers -8V drain source voltage and -3.7A continuous drain current. It is suitable for DC-to-DC converters, high side load switch, cellular phone, notebook, PDAs. • Leading Trench technology for low RDS (O...
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P Channel | 8V | 3.7A | 0.052ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ15003G
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SC15816 |
Bipolar (BJT) Single Transistor, Audio, NPN, 140V, 20A, 250W, TO-3 ONSEMI The MJ15003G is a Power Transistor designed for high power audio, disk head positioners and other linear applications. High safe operating area and high DC current gain. Ideal for low distortion complementary designs. • 140VDC Collector-base voltage • 0.70...
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PBSS8110T,215
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SC16078 |
Bipolar (BJT) Single Transistor, NPN, 100V, 1A, 300mW, SOT-23, SMD NEXPERIA The PBSS8110T is a 1A NPN breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package. • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Higher efficiency leading to less heat ge...
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FDA59N30
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SC16993 |
Power MOSFET, N Channel, 300 V, 59 A, 0.047 ohm, TO-3P, Through Hole ONSEMI The FDA59N30 is a 300V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This high voltage MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode'...
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N Channel | 300V | 59A | 0.047ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N6109
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SC15381 |
Bipolar Transistor, PNP, 50V, 7A, TO-220 MULTICOMP PRO The 2N6109 is a -50V Silicon PNP Complementary Plastic Power Transistor designed for use in general purpose amplifier and switching applications. • DC current gain (hfe = 30 to 150 at Ic = 7A) • Collector-emitter sustaining voltage (Vceo (sus) = 50VDC mini...
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DMG1012T-7
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SC16742 |
Power MOSFET, N Channel, 20V, 630mA, 0.3 Ohm, SOT-523, SMD DIODES INC. DMG1012T-7 is a N-channel enhancement mode MOSFET. • Low on-resistance, low gate threshold voltage • Low input capacitance, fast switching speed • Low input/output leakage, ESD protected up to 2kV • Drain-source voltage is 20V at TA = +25°C • Gate-source v...
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N Channel | 20V | 630mA | 0.4ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML2060TRPBF
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SC16789 |
Power MOSFET, N Channel, 60 V, 1.2 A, 0.356 ohm, SOT-23, Surface Mount INFINEON The IRLML2060TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Environment-friendly • Increased relia...
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N Channel | 60V | 1.2A | 0.356ohm |