Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

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2N7002WT1G
2N7002WT1G - Power MOSFET, N Channel, 60 V, 340 mA, 1.19 ohm, SOT-323, Surface Mount

SC16709

Power MOSFET, N Channel, 60 V, 340 mA, 1.19 ohm, SOT-323, Surface Mount

ONSEMI

The 2N7002WT1G is a N-channel small signal Power MOSFET ideal for low power applications. It offers 60V drain source voltage and 310mA continuous drain current. It is suitable for low side load switch, level shift circuits, DC-to-DC converter, DSC and PDA ...

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N Channel 60V 340mA 1.19ohm
STP20NM50
STP20NM50 - Power MOSFET, N Channel, 550 V, 20 A, 0.25 ohm, TO-220, Through Hole

SC16982

Power MOSFET, N Channel, 550 V, 20 A, 0.25 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP20NM50 is a MDmesh™ N-channel Power MOSFET associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics and dynamic performa...

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N Channel 550V 20A 0.25ohm
SQ2361ES-T1_GE3
SQ2361ES-T1_GE3 - Power MOSFET, P Channel, 60V, 2.8A, 0.13 Ohm, SOT-23, SMD

SC15964

Power MOSFET, P Channel, 60V, 2.8A, 0.13 Ohm, SOT-23, SMD

VISHAY

New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...

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P Channel 60V 2.8A 0.13ohm
TTC5200
TTC5200 - Bipolar (BJT) Single Transistor, NPN, 230V, 15A, 150W, TO-3P

SC15763

Bipolar (BJT) Single Transistor, NPN, 230V, 15A, 150W, TO-3P

TOSHIBA

The TTC5200 from Toshiba is a through hole NPN silicon transistor in TO-3P package with high collector voltage. This device is commonly used for power amplification. • Collector to emitter voltage (Vce) is 230V • Collector to base voltage of 230V • Collect...

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PMBTA45,215
PMBTA45,215 - Bipolar (BJT) Single Transistor, NPN, 500V, 150mA, 300mW, SOT-23, SMD

SC16055

Bipolar (BJT) Single Transistor, NPN, 500V, 150mA, 300mW, SOT-23, SMD

NEXPERIA

The PMBTA45 is a 500V NPN low VCEsat Breakthrough In Small Signal (BISS) Transistor with very low collector-emitter saturation voltage and high efficiency due to less heat generation. Suitable for use in electronic ballasts, LED driver for LED chain module...

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MMBT2907A-7-F
MMBT2907A-7-F - Bipolar (BJT) Single Transistor, PNP, 60V, 600mA, 300mW, SOT-23, SMD

SC16060

Bipolar (BJT) Single Transistor, PNP, 60V, 600mA, 300mW, SOT-23, SMD

DIODES INC.

The MMBT2907A-7-F is a PNP small signal Bipolar Transistor offers -600mA collector current and -60V collector-base voltage. It is ideal for low power amplification and switching. • UL94V-0 Flammability rating • Epitaxial planar die construction • MMBT2222A...

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J175-D26Z
J175-D26Z - JFET Transistor, JFET, 30V, -7mA, -60mA, 6V, TO-92

SC15910

JFET Transistor, JFET, 30V, -7mA, -60mA, 6V, TO-92

ONSEMI

The J175_D26Z is a P-channel Switch designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. It is sourced from process 88.

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P Channel - - -
TIP150
TIP150 - Bipolar (BJT) Single Transistor, Darlington, NPN, 300V, 7A, 80W, TO-220

SC15740

Bipolar (BJT) Single Transistor, Darlington, NPN, 300V, 7A, 80W, TO-220

MULTICOMP PRO

The TIP150 is a NPN Darlington Power Transistor with 300V collector-emitter voltage and 80W power dissipation. • Collector-emitter sustaining voltage (Vceo (sus) = 30V minimum) • Collector-emitter saturation voltage(Vce (sat) = 2V maximum at Ic = 5A) • Mul...

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IRLR7843TRPBF
IRLR7843TRPBF - Power MOSFET, N Channel, 30 V, 161 A, 0.0026 ohm, TO-252AA, Surface Mount

SC17008

Power MOSFET, N Channel, 30 V, 161 A, 0.0026 ohm, TO-252AA, Surface Mount

INFINEON

The IRLR7843TRPBF is a HEXFET® single N-channel Power MOSFET offers ultra-low gate impedance, fully characterized avalanche voltage and current. It is suitable for high frequency synchronous buck converters and high frequency isolated DC-to-DC converter wi...

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N Channel 30V 161A 0.0026ohm
PMV32UP,215
PMV32UP,215 - Power MOSFET, P Channel, 20 V, 4 A, 0.032 ohm, SOT-23, Surface Mount

SC16848

Power MOSFET, P Channel, 20 V, 4 A, 0.032 ohm, SOT-23, Surface Mount

NEXPERIA

The PMV32UP is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, High-side load-switch and switching circuit applications. • 1.8V Drain-...

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P Channel 20V 4A 0.032ohm
NX3008PBK,215
NX3008PBK,215 - Power MOSFET, P Channel, 30 V, 230 mA, 2.8 ohm, SOT-23, Surface Mount

SC16776

Power MOSFET, P Channel, 30 V, 230 mA, 2.8 ohm, SOT-23, Surface Mount

NEXPERIA

The NX3008PBK is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, low-side load-switch, high-speed line driver and switching circuit applications. • Very fast ...

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P Channel 30V 230mA 2.8ohm
BSS123-7-F
BSS123-7-F - Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount

SC16705

Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount

DIODES INC.

The BSS123-7-F is a N-channel Enhancement Mode MOSFET uses diodes proprietary, high density and uses advanced trench technology. Matte tin finish annealed over alloy 42 lead frame terminals and UL94V-0 flame-rated moulded plastic case. Designed to minimize...

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N Channel 100V 170mA 6ohm
BC517-D74Z
BC517-D74Z - Bipolar (BJT) Single Transistor, NPN, 30V, 1.2A, 625mW, TO-92

SC15804

Bipolar (BJT) Single Transistor, NPN, 30V, 1.2A, 625mW, TO-92

ONSEMI

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VNP20N07-E
VNP20N07-E - Power MOSFET, N Channel, 80V, 10A, 0.05 ohm, TO-220

SC15832

Power MOSFET, N Channel, 80V, 10A, 0.05 ohm, TO-220

STMICROELECTRONICS

The VNP20N07-E is a 70V Fully Auto Protected Power MOSFET made using VIPower technology intended for replacement of standard power MOSFETS in DC to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the c...

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N Channel 80V 10A 0.05ohm
2SK3557-6-TB-E
2SK3557-6-TB-E - JFET Transistor, -15V, 10mA, 20mA, -1.5V, SOT-23, JFET

SC15909

JFET Transistor, -15V, 10mA, 20mA, -1.5V, SOT-23, JFET

ONSEMI

• Channel Type : N Channel

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N Channel - - -
BSP318SH6327XTSA1
BSP318SH6327XTSA1 - Power MOSFET, N Channel, 60 V, 2.6 A, 0.07 ohm, SOT-223, Surface Mount

SC16992

Power MOSFET, N Channel, 60 V, 2.6 A, 0.07 ohm, SOT-223, Surface Mount

INFINEON

• 60V, 2.6A SIPMOS® N-channel small signal transistor in 4 pin SOT-223 package • Enhancement mode • Avalanche rated • Logic level • dv/dt rated • Qualified according to AEC-Q101

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N Channel 60V 2.6A 0.07ohm
BC847CW,115
BC847CW,115 - Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 200mW, SOT-323, SMD

SC16086

Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 200mW, SOT-323, SMD

NEXPERIA

The BC847CW,115 is a NPN general purpose Transistor with 3 leads, plastic surface mount package. Designed for switching and amplification applications. • Three different gain selections

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BC557BTA
BC557BTA - Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 500mW, TO-92

SC15808

Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 500mW, TO-92

ONSEMI

The BC557BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Complement to BC547

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BC846
BC846 - Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 250mW, SOT-23, SMD

SC16117

Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 250mW, SOT-23, SMD

MULTICOMP PRO

The BC846 is a NPN general purpose Bipolar Transistor housed in a surface-mount plastic package. It is used in AF input stages and driver applications, suitable for switching and amplification applications. • Two different gain selections • High current ga...

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BSS123L
BSS123L - Power MOSFET, N Channel, 100 V, 170 mA, 2.98 ohm, SOT-23, Surface Mount

SC16764

Power MOSFET, N Channel, 100 V, 170 mA, 2.98 ohm, SOT-23, Surface Mount

ONSEMI

The BSS123L is produced using high cell density trench MOSFET technology. This minimizes on-state resistance while providing rugged, reliable and fast switching performance. The BSS123L is particularly suited for low voltage, low current applications such ...

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N Channel 100V 170mA 2.98ohm
BSS316NH6327XTSA1
BSS316NH6327XTSA1 - Power MOSFET, N Channel, 30 V, 1.4 A, 0.119 ohm, SOT-23, Surface Mount

SC16768

Power MOSFET, N Channel, 30 V, 1.4 A, 0.119 ohm, SOT-23, Surface Mount

INFINEON

The BSS316N H6327 is an OptiMOS™2 N-channel logic level enhancement mode Small Signal Transistor, logic level (4.5V rated) and avalanche rated. • ±20V Gate-source voltage • 260°C Soldering temperature • AEC-Q101 Qualified • Halogen-free

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N Channel 30V 1.4A 0.119ohm
SI2309CDS-T1-GE3
SI2309CDS-T1-GE3 - Power MOSFET, P Channel, 60 V, 1.6 A, 0.285 ohm, SOT-23, Surface Mount

SC16750

Power MOSFET, P Channel, 60 V, 1.6 A, 0.285 ohm, SOT-23, Surface Mount

VISHAY

The SI2309CDS-T1-GE3 is a P-Channel 60V Power MOSFET with ±20V gate source voltage. It works on TrenchFET® power MOSFET technology. • Halogen-free

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P Channel 60V 1.6A 0.285ohm
IRF7342TRPBF
IRF7342TRPBF - Dual MOSFET, P Channel, 55V, 3.4A, 0.095 Ohm, SOIC, SMD

SC16807

Dual MOSFET, P Channel, 55V, 3.4A, 0.095 Ohm, SOIC, SMD

INFINEON

The IRF7342TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extreme...

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P Channel - - -
2SA1943OTU
2SA1943OTU - Bipolar (BJT) Single Transistor, PNP, -250V, -17A, 150W, TO-264

SC15776

Bipolar (BJT) Single Transistor, PNP, -250V, -17A, 150W, TO-264

ONSEMI

The 2SA1943OTU is a PNP epitaxial Silicon Transistor with excellent gain linearity for low THD, high current capability and high power dissipation. • High voltage • High frequency • Complement to 2SC5200/FJL4315

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MJD122G
MJD122G - Bipolar (BJT) Single Transistor, NPN, 100V, 8A, 1.75W, TO-252 (DPAK), SMD

SC16026

Bipolar (BJT) Single Transistor, NPN, 100V, 8A, 1.75W, TO-252 (DPAK), SMD

ONSEMI

The MJD122G is a 100V Silicon NPN Bipolar Complementary Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. Thins transistor is surface mount replacements for 2N6040-2N6045 series, TIP120-TIP122 series a...

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