Transistors
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Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002WT1G
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SC16709 |
Power MOSFET, N Channel, 60 V, 340 mA, 1.19 ohm, SOT-323, Surface Mount ONSEMI The 2N7002WT1G is a N-channel small signal Power MOSFET ideal for low power applications. It offers 60V drain source voltage and 310mA continuous drain current. It is suitable for low side load switch, level shift circuits, DC-to-DC converter, DSC and PDA ...
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N Channel | 60V | 340mA | 1.19ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STP20NM50
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SC16982 |
Power MOSFET, N Channel, 550 V, 20 A, 0.25 ohm, TO-220, Through Hole STMICROELECTRONICS The STP20NM50 is a MDmesh™ N-channel Power MOSFET associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics and dynamic performa...
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N Channel | 550V | 20A | 0.25ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQ2361ES-T1_GE3
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SC15964 |
Power MOSFET, P Channel, 60V, 2.8A, 0.13 Ohm, SOT-23, SMD VISHAY New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...
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P Channel | 60V | 2.8A | 0.13ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TTC5200
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SC15763 |
Bipolar (BJT) Single Transistor, NPN, 230V, 15A, 150W, TO-3P TOSHIBA The TTC5200 from Toshiba is a through hole NPN silicon transistor in TO-3P package with high collector voltage. This device is commonly used for power amplification. • Collector to emitter voltage (Vce) is 230V • Collector to base voltage of 230V • Collect...
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PMBTA45,215
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SC16055 |
Bipolar (BJT) Single Transistor, NPN, 500V, 150mA, 300mW, SOT-23, SMD NEXPERIA The PMBTA45 is a 500V NPN low VCEsat Breakthrough In Small Signal (BISS) Transistor with very low collector-emitter saturation voltage and high efficiency due to less heat generation. Suitable for use in electronic ballasts, LED driver for LED chain module...
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MMBT2907A-7-F
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SC16060 |
Bipolar (BJT) Single Transistor, PNP, 60V, 600mA, 300mW, SOT-23, SMD DIODES INC. The MMBT2907A-7-F is a PNP small signal Bipolar Transistor offers -600mA collector current and -60V collector-base voltage. It is ideal for low power amplification and switching. • UL94V-0 Flammability rating • Epitaxial planar die construction • MMBT2222A...
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J175-D26Z
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SC15910 |
JFET Transistor, JFET, 30V, -7mA, -60mA, 6V, TO-92 ONSEMI The J175_D26Z is a P-channel Switch designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. It is sourced from process 88.
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P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP150
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SC15740 |
Bipolar (BJT) Single Transistor, Darlington, NPN, 300V, 7A, 80W, TO-220 MULTICOMP PRO The TIP150 is a NPN Darlington Power Transistor with 300V collector-emitter voltage and 80W power dissipation. • Collector-emitter sustaining voltage (Vceo (sus) = 30V minimum) • Collector-emitter saturation voltage(Vce (sat) = 2V maximum at Ic = 5A) • Mul...
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IRLR7843TRPBF
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SC17008 |
Power MOSFET, N Channel, 30 V, 161 A, 0.0026 ohm, TO-252AA, Surface Mount INFINEON The IRLR7843TRPBF is a HEXFET® single N-channel Power MOSFET offers ultra-low gate impedance, fully characterized avalanche voltage and current. It is suitable for high frequency synchronous buck converters and high frequency isolated DC-to-DC converter wi...
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N Channel | 30V | 161A | 0.0026ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMV32UP,215
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SC16848 |
Power MOSFET, P Channel, 20 V, 4 A, 0.032 ohm, SOT-23, Surface Mount NEXPERIA The PMV32UP is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, High-side load-switch and switching circuit applications. • 1.8V Drain-...
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P Channel | 20V | 4A | 0.032ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX3008PBK,215
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SC16776 |
Power MOSFET, P Channel, 30 V, 230 mA, 2.8 ohm, SOT-23, Surface Mount NEXPERIA The NX3008PBK is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, low-side load-switch, high-speed line driver and switching circuit applications. • Very fast ...
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P Channel | 30V | 230mA | 2.8ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS123-7-F
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SC16705 |
Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount DIODES INC. The BSS123-7-F is a N-channel Enhancement Mode MOSFET uses diodes proprietary, high density and uses advanced trench technology. Matte tin finish annealed over alloy 42 lead frame terminals and UL94V-0 flame-rated moulded plastic case. Designed to minimize...
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N Channel | 100V | 170mA | 6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC517-D74Z
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SC15804 |
Bipolar (BJT) Single Transistor, NPN, 30V, 1.2A, 625mW, TO-92 ONSEMI
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VNP20N07-E
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SC15832 |
Power MOSFET, N Channel, 80V, 10A, 0.05 ohm, TO-220 STMICROELECTRONICS The VNP20N07-E is a 70V Fully Auto Protected Power MOSFET made using VIPower technology intended for replacement of standard power MOSFETS in DC to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the c...
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N Channel | 80V | 10A | 0.05ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SK3557-6-TB-E
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SC15909 |
JFET Transistor, -15V, 10mA, 20mA, -1.5V, SOT-23, JFET ONSEMI • Channel Type : N Channel
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSP318SH6327XTSA1
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SC16992 |
Power MOSFET, N Channel, 60 V, 2.6 A, 0.07 ohm, SOT-223, Surface Mount INFINEON • 60V, 2.6A SIPMOS® N-channel small signal transistor in 4 pin SOT-223 package • Enhancement mode • Avalanche rated • Logic level • dv/dt rated • Qualified according to AEC-Q101
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N Channel | 60V | 2.6A | 0.07ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847CW,115
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SC16086 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 200mW, SOT-323, SMD NEXPERIA The BC847CW,115 is a NPN general purpose Transistor with 3 leads, plastic surface mount package. Designed for switching and amplification applications. • Three different gain selections
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BC557BTA
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SC15808 |
Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 500mW, TO-92 ONSEMI The BC557BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Complement to BC547
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BC846
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SC16117 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 250mW, SOT-23, SMD MULTICOMP PRO The BC846 is a NPN general purpose Bipolar Transistor housed in a surface-mount plastic package. It is used in AF input stages and driver applications, suitable for switching and amplification applications. • Two different gain selections • High current ga...
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BSS123L
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SC16764 |
Power MOSFET, N Channel, 100 V, 170 mA, 2.98 ohm, SOT-23, Surface Mount ONSEMI The BSS123L is produced using high cell density trench MOSFET technology. This minimizes on-state resistance while providing rugged, reliable and fast switching performance. The BSS123L is particularly suited for low voltage, low current applications such ...
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N Channel | 100V | 170mA | 2.98ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS316NH6327XTSA1
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SC16768 |
Power MOSFET, N Channel, 30 V, 1.4 A, 0.119 ohm, SOT-23, Surface Mount INFINEON The BSS316N H6327 is an OptiMOS™2 N-channel logic level enhancement mode Small Signal Transistor, logic level (4.5V rated) and avalanche rated. • ±20V Gate-source voltage • 260°C Soldering temperature • AEC-Q101 Qualified • Halogen-free
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N Channel | 30V | 1.4A | 0.119ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2309CDS-T1-GE3
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SC16750 |
Power MOSFET, P Channel, 60 V, 1.6 A, 0.285 ohm, SOT-23, Surface Mount VISHAY The SI2309CDS-T1-GE3 is a P-Channel 60V Power MOSFET with ±20V gate source voltage. It works on TrenchFET® power MOSFET technology. • Halogen-free
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P Channel | 60V | 1.6A | 0.285ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7342TRPBF
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SC16807 |
Dual MOSFET, P Channel, 55V, 3.4A, 0.095 Ohm, SOIC, SMD INFINEON The IRF7342TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extreme...
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2SA1943OTU
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SC15776 |
Bipolar (BJT) Single Transistor, PNP, -250V, -17A, 150W, TO-264 ONSEMI The 2SA1943OTU is a PNP epitaxial Silicon Transistor with excellent gain linearity for low THD, high current capability and high power dissipation. • High voltage • High frequency • Complement to 2SC5200/FJL4315
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MJD122G
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SC16026 |
Bipolar (BJT) Single Transistor, NPN, 100V, 8A, 1.75W, TO-252 (DPAK), SMD ONSEMI The MJD122G is a 100V Silicon NPN Bipolar Complementary Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. Thins transistor is surface mount replacements for 2N6040-2N6045 series, TIP120-TIP122 series a...
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